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161. 发明授权

US06596236B2 Micro-machined thin film sensor arrays for the detection of H2 containing gases, and method of making and using the same 有权
标题翻译：用于检测含H2气体的微加工薄膜传感器阵列及其制造和使用方法
公开(公告)号：US06596236B2
公开(公告)日：2003-07-22
申请号：US09828115
申请日：2001-04-06
申请人： Frank DiMeo, Jr. , Thomas H. Baum
发明人： Frank DiMeo, Jr. , Thomas H. Baum
IPC分类号： G01N700
CPC分类号： G01N21/783 , G01N21/59 , G01N27/124 , G01N27/128 , G01N33/0014 , G01N33/005 , G01N2291/02863 , Y10T436/175383 , Y10T436/22
摘要： The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.
摘要翻译：本发明提供一种氢传感器，其包括在微电镀板结构上由金属有机化学气相沉积（MOCVD）或物理气相沉积（PVD）形成的薄膜传感器元件。薄膜传感器元件包括与氢可逆地相互作用以提供相应改变的响应特性（例如光透射率，电导率，电阻，电容，磁阻，光电导等）的氢相互作用金属膜的膜，相对于不存在氢气时膜的响应特性。氢相互作用金属膜可以用薄膜氢可渗透阻挡层进行外涂，以保护氢相互作用膜免受与非氢物质的有害相互作用。氢可渗透屏障可以包括清除氧气和其它类似物质的物质。本发明的氢传感器可有效地用于在易于入侵或产生氢的环境中检测氢气，并且可以方便地配置为手持设备。

162. 发明授权

US06589329B1 Composition and process for production of copper circuitry in microelectronic device structures 失效
标题翻译：在微电子器件结构中生产铜电路的组成和工艺
公开(公告)号：US06589329B1
公开(公告)日：2003-07-08
申请号：US09522102
申请日：2000-03-09
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C23C1616
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne such as [(hfac)Cu]2 (DMDVS). The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.
摘要翻译：可用于半导体集成电路中铜层的化学气相传输（CVD）形成的组合物，例如半导体器件结构中的互连金属化，用于电镀的粘合种子层，用于沉积薄膜记录头或用于封装的电路化组件。铜前体制剂可以包括一种或多种铜前体，例如式hfac（Cu）L的前体，其中L是低成本配体如烯烃和/或炔烃，例如[（hfac）Cu] 2（ DMDVS）。除了铜前体之外，配方可以包括一种或多种低成本配体物质，例如烯烃，炔，二烯及其组合，以增加制剂的热稳定性并提供CVD的增强的气化性质。

163. 发明授权

US06458984B1 Chemical method for removal and analysis of boron impurities in tetraethylorthosilicate (TEOS) 失效
标题翻译：硼酸四乙酯（TEOS）中硼杂质的去除和分析的化学方法
公开(公告)号：US06458984B1
公开(公告)日：2002-10-01
申请号：US09540584
申请日：2000-03-31
申请人： Thomas H. Baum , Chongying Xu , Frank R. Hedges , David Daniel Bernhard , Brian L. Benac , Scott L. Battle , John M. Lansdown
发明人： Thomas H. Baum , Chongying Xu , Frank R. Hedges , David Daniel Bernhard , Brian L. Benac , Scott L. Battle , John M. Lansdown
IPC分类号： C07F704
CPC分类号： C07F7/045 , C07F7/20
摘要： A method of purifying tetraethylorthosilicate (TEOS) to remove boron impurities therefrom, and a related method of analyzing TEOS to determine concentration of boron impurities therein.
摘要翻译：纯化原硅酸四乙酯（TEOS）以除去硼杂质的方法，以及分析TEOS以确定其中硼杂质浓度的相关方法。

164. 发明授权

US06338873B1 Method of forming Group II metal-containing films utilizing Group II MOCVD source reagents 失效
标题翻译：使用II族MOCVD源试剂形成含II族金属的膜的方法
公开(公告)号：US06338873B1
公开(公告)日：2002-01-15
申请号：US09610822
申请日：2000-07-06
申请人： Witold Paw , Thomas H. Baum
发明人： Witold Paw , Thomas H. Baum
IPC分类号： C23C1600
CPC分类号： C07F3/003 , C23C16/408 , C23C16/409
摘要： Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
摘要翻译：描述了新的第II族金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。络合物是具有配体的II族金属β-二酮酸酯路易斯碱加成物，其具有：（i）带有末端NH 2基团的胺; （ii）以胺（i）/羰基反应产物形成的亚胺配体; （iii）上述配体（i） - （ii）中的两种或更多种的组合，和（iv）一种或多种前述配体（i） - （ii）与一种或多种其它配体或溶剂的组合。钡和锶的源试剂络合物可用于形成钛酸锶钡和其他第II类掺杂薄膜在用于微电子器件应用的衬底上，例如集成电路，铁电存储器，开关，辐射探测器，薄膜电容器，微机电结构（MEMS）和全息存储介质。

165. 发明授权

US06337148B1 Copper source reagent compositions, and method of making and using same for microelectronic device structures 失效
标题翻译：铜源试剂组合物，以及制造和使用它们用于微电子器件结构的方法
公开(公告)号：US06337148B1
公开(公告)日：2002-01-08
申请号：US09318440
申请日：1999-05-25
申请人： Chongying Xu , Thomas H. Baum
发明人： Chongying Xu , Thomas H. Baum
IPC分类号： C07F108
CPC分类号： C07F1/08 , C07F1/005 , C23C16/18 , H01L21/28556 , Y10S428/901 , Y10T428/1291
摘要： Copper precursors useful in liquid delivery CVD for forming a copper-containing material on a substrate. The disclosed copper precursors are particularly useful for metallization of interconnections in semiconductor device structures.
摘要翻译：用于在基底上形成含铜材料的液体输送CVD中的铜前体。所公开的铜前体对于在半导体器件结构中的互连的金属化是特别有用的。

166. 发明授权

US6162712A Platinum source compositions for chemical vapor deposition of platinum 失效
标题翻译：用于铂化学气相沉积的铂源组合物
公开(公告)号：US6162712A
公开(公告)日：2000-12-19
申请号：US008705
申请日：1998-01-16
申请人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
发明人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
IPC分类号： C07C49/12 , C07C49/167 , C07C49/92 , C07F15/00 , C07F17/02 , C23C14/26 , C23C16/18 , G06F12/00 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/44
CPC分类号： C23C16/18 , C07C49/92 , C07F17/02 , H01L28/65
摘要： A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
摘要翻译：一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中：R选自由氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基组成的组; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丁基，叔丁基 - 丁基，三氟甲基，全氟乙基和全氟正丙基，和（ⅱ）其溶剂介质。本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上在CVD反应器中。

167. 发明授权

US6120846A Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积法选择性沉积铋基铁电薄膜的方法
公开(公告)号：US6120846A
公开(公告)日：2000-09-19
申请号：US996575
申请日：1997-12-23
申请人： Frank Hintermaier , Bryan Hendrix , Jeff Roeder , Peter Van Buskirk , Thomas H. Baum
发明人： Frank Hintermaier , Bryan Hendrix , Jeff Roeder , Peter Van Buskirk , Thomas H. Baum
IPC分类号： C23C16/04 , C23C16/40 , H01B3/12 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L21/8246 , H01L27/105 , B05D5/00 , C23C16/00
CPC分类号： C23C16/04 , C23C16/40 , H01L21/31691
摘要： A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
摘要翻译：描述了通过选择性化学气相沉积在基底上选择性沉积铋基铁电薄膜的方法。沉积过程中的选择性通过选择确保某些区域中高铋沉积效率的底物 - 前体组合，并结合特定工艺参数在其它区域中具有低铋沉积效率来实现。

168. 发明授权

US6110529A Method of forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在基板上形成金属膜的方法
公开(公告)号：US6110529A
公开(公告)日：2000-08-29
申请号：US484654
申请日：1995-06-07
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C07F3/00 , C07F5/00 , C07F7/00 , C07F9/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C07F3/003 , C07F19/005 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441
摘要： A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种在衬底上形成金属膜的方法，包括通过化学气相沉积从所述下式的金属有机络合物沉积所述金属膜：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮化合物，β-硫代酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧基化物和希夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

169. 发明授权

US5972743A Precursor compositions for ion implantation of antimony and ion implantation process utilizing same 失效
标题翻译：用于离子注入锑的前体组合物和利用其的离子注入工艺
公开(公告)号：US5972743A
公开(公告)日：1999-10-26
申请号：US759761
申请日：1996-12-03
申请人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
发明人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
IPC分类号： C23C14/48 , C30B31/00 , C30B31/22 , H01L21/265 , H01L21/338 , H01L21/331
CPC分类号： H01L21/26513 , C23C14/48 , C30B31/00 , C30B31/22 , Y10S438/914
摘要： A method for n-doping a material layer with antimony, comprising ion implanting antimony from an antimony precursor composition including a compound of the formula SbX.sub.n ((CH.sub.2).sub.y SiR.sub.3).sub.n-3, wherein: n is an integer having a value of 1 or 2; y is an integer having a value of from 1 to 3 inclusive; each R is independently selected from C.sub.1 -C.sub.4 alkyl; and each X is independently selected from halo substituents. The antimony precursor composition may further include a fluorine-containing auxiliary gas, to effect in situ cleaning of the ionization chamber during ion implantation.
摘要翻译：一种用锑掺杂材料层的方法，包括从包含式SbXn（（CH 2）y SiR 3）n-3的化合物的锑前体组合物离子注入锑，其中：n是具有值1的整数或 2; y为1〜3的整数，每个R独立地选自C 1 -C 4烷基; 并且每个X独立地选自卤素取代基。锑前体组合物还可以包括含氟辅助气体，以在离子注入期间实现电离室的原位清洁。

170. 发明授权

US5859274A Anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same 失效
标题翻译：用于沉积含铋膜的无水单核三（β-二酮）铋组合物及其制备方法
公开(公告)号：US5859274A
公开(公告)日：1999-01-12
申请号：US960915
申请日：1997-10-30
申请人： Thomas H. Baum , Gautam Bhandari , Margaret Chappuis
发明人： Thomas H. Baum , Gautam Bhandari , Margaret Chappuis
IPC分类号： C07F9/94
CPC分类号： C07F9/94
摘要： Anhydrous mononuclear tris(.beta.-diketonato)bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(.beta.-diketonato)bismuth complexes of the prior art.
摘要翻译：与从双核三（β-二酮）衍生的薄膜获得的薄膜相比，无水单核三（β-二酮）铋络合物可用作铋的化学气相沉积的前体，用于生产显着改善的化学计量，形态和功能特征的含Bi薄膜，现有技术的铋络合物。

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