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151. 发明授权

US06716730B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US06716730B2
公开(公告)日：2004-04-06
申请号：US10339602
申请日：2003-01-10
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： H01L2122
CPC分类号： G03F7/168 , G03F7/0045 , G03F7/2022
摘要： After pre-baking a resist film, a solvent included in the resist film is vaporized. After vaporizing the solvent included in the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light in vacuum. The resist film is developed after the pattern exposure, so as to form a resist pattern.
摘要翻译：在预烘烤抗蚀剂膜之后，包含在抗蚀剂膜中的溶剂被蒸发。在蒸发包含在抗蚀剂膜中的溶剂之后，通过在真空中曝光光来选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后显影抗蚀剂膜，以形成抗蚀剂图案。

152. 发明授权

US4805000A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4805000A
公开(公告)日：1989-02-14
申请号：US104041
申请日：1987-10-02
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03B27/42 , G03B27/52 , G03B27/70
CPC分类号： G03F7/70691 , G03F7/70833 , G03F7/709
摘要： An exposure apparatus for use in manufacturing a semiconductor device which includes a KrF laser as an Excimer laser, a reduction projective type exposure optical system for applying laser beam emitted the laser on a wafer, and a support with vibration absorption function on which the KrF laser is mounted separately from the exposure optical system. The light axis of a light path between the KrF laser and the exposure optical system coincides with direction of vibration which is absorbed in the support.Thereby, shock wave produced from KrF laser upon discharge operation may be absorbed in said support without giving any bad effect to other components.
摘要翻译：一种用于制造半导体器件的曝光装置，该半导体器件包括作为准分子激光器的KrF激光器，用于将发射激光的激光束施加在晶片上的还原投射型曝光光学系统以及具有振动吸收功能的支撑件，其中KrF激光器与曝光光学系统分开安装。 KrF激光器和曝光光学系统之间的光路的光轴与支撑体中吸收的振动方向重合。因此，在放电操作时由KrF激光产生的冲击波可以被吸收在所述支撑件中，而不会对其它部件产生任何不良影响。

153. 发明授权

US4724466A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4724466A
公开(公告)日：1988-02-09
申请号：US4133
申请日：1987-01-16
申请人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
发明人： Kazufumi Ogawa , Masaru Sasago , Masayuki Endo , Takeshi Ishihara
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70691 , G03F7/70833 , G03F7/709
摘要： An exposure apparatus for use in manufacturing a semiconductor device which includes a KrF laser as an Excimer laser, a reduction projective type exposure optical system for applying laser beam emitted the laser on a wafer, and a support with vibration absorption function on which the KrF laser is mounted separately from the exposure optical system. The light axis of a light path between the KrF laser and the exposure optical system coincides with direction of vibration which is absorbed in the support.Thereby, shock wave produced from KrF laser upon discharge operation may be absorbed in said support without giving any bad effect to other components.
摘要翻译：一种用于制造半导体器件的曝光装置，该半导体器件包括作为准分子激光器的KrF激光器，用于将发射激光的激光束施加在晶片上的还原投射型曝光光学系统以及具有振动吸收功能的支撑件，其中KrF激光器与曝光光学系统分开安装。 KrF激光器和曝光光学系统之间的光路的光轴与支撑体中吸收的振动方向重合。因此，在放电操作时由KrF激光产生的冲击波可以被吸收在所述支撑件中，而不会对其它部件产生任何不良影响。

154. 发明授权

US08268535B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US08268535B2
公开(公告)日：2012-09-18
申请号：US13085232
申请日：2011-04-12
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

155. 发明授权

US07943285B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US07943285B2
公开(公告)日：2011-05-17
申请号：US12029944
申请日：2008-02-12
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.
摘要翻译：在形成下层膜和中间层膜之后，将通过第一图案曝光形成的抗蚀图案与第一抗蚀剂膜和第二图案曝光用第二抗蚀剂膜转印到中间层膜。使用中间层图案作为掩模蚀刻下层膜，以形成下层膜图案。这里，第一和第二抗蚀剂膜是化学放大抗蚀剂膜。第二抗蚀剂膜含有更多量的添加剂，其提高了抗蚀剂的灵敏度或改善了抗蚀剂暴露部分的碱溶性。

156. 发明授权

US07771918B2 Semiconductor manufacturing apparatus and pattern formation method 有权
标题翻译：半导体制造装置和图案形成方法
公开(公告)号：US07771918B2
公开(公告)日：2010-08-10
申请号：US11143667
申请日：2005-06-03
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , G03F7/2041 , G03F7/70891
摘要： In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
摘要翻译：在使用浸渍光刻的图案形成方法中，在晶片上形成抗蚀剂膜之后，通过用包含不饱和脂肪酸的液体（例如向日葵油或橄榄油，包括油酸）曝光光来选择性地照射抗蚀剂膜来进行图案曝光酸，提供在抗蚀剂膜上。在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。

157. 发明授权

US07713685B2 Exposure system and pattern formation method 有权
标题翻译：曝光系统和图案形成方法
公开(公告)号：US07713685B2
公开(公告)日：2010-05-11
申请号：US11143666
申请日：2005-06-03
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03F7/70341 , G03F7/0395 , G03F7/168 , G03F7/2041 , G03F7/70991
摘要： An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.
摘要翻译：曝光系统包括用清洁液清洗形成在晶片上的抗蚀膜的表面的清洁单元和用于在设置在抗蚀剂膜和投影透镜之间的浸渍液进行图案曝光的曝光单元。

158. 发明授权

US07666967B2 Ester compound, polymer, resist composition, and patterning process 有权
标题翻译：酯化合物，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07666967B2
公开(公告)日：2010-02-23
申请号：US11606069
申请日：2006-11-30
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Kazuhiko Maeda , Haruhiko Komoriya , Michitaka Ootani
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Kazuhiko Maeda , Haruhiko Komoriya , Michitaka Ootani
IPC分类号： C08F214/18
CPC分类号： C07D307/93 , C07D409/12 , G03F7/0046 , G03F7/0397
摘要： A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
摘要翻译：使用包含通过聚合式（1）的酯化合物获得的重复单元（2）的聚合物来形成抗蚀剂组合物。 R 1是F或C 1 -C 6氟代烷基，R 2是H或C 1 -C 8烷基，R 3是O或C 1 -C 6亚烷基，R 4和R 5各自是H或C 1 -C 10烷基或氟代烷基，R 6是H或酸不稳定基团。当通过ArF光刻处理时，抗蚀剂组合物具有改进的分辨率，透明度，最小的线边缘粗糙度和耐蚀刻性的优点。当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，抗蚀剂组合物表现出更好的性能。

159. 发明申请

US20090227111A1 BARRIER FILM MATERIAL AND PATTERN FORMATION METHOD USING THE SAME 审中-公开
标题翻译：遮蔽膜材料和图案形成方法
公开(公告)号：US20090227111A1
公开(公告)日：2009-09-10
申请号：US12466769
申请日：2009-05-15
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： H01L21/306 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/119 , Y10S430/123
摘要： A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.
摘要翻译：在基板上形成由化学放大抗蚀剂制成的抗蚀剂膜。随后，在抗蚀剂膜上形成用于防止抗蚀剂膜的成分洗脱浸入液体或防止浸渍液渗透到抗蚀剂膜中的阻挡膜。此后，通过设置在阻挡膜上的浸没液体，通过选择性地照射抗蚀剂膜，通过阻挡膜曝光光来进行图案曝光。然后，在去除阻挡膜之后，对经过图案曝光的抗蚀剂膜进行显影，以形成由抗蚀剂膜制成的抗蚀剂图案。

160. 发明申请

US20090104560A1 BARRIER FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
标题翻译：阻隔膜材料和图案形成方法
公开(公告)号：US20090104560A1
公开(公告)日：2009-04-23
申请号：US12202615
申请日：2008-09-02
申请人： Masayuki ENDO , Masaru Sasago
发明人： Masayuki ENDO , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/11 , G03F7/2041
摘要： In exposing a resist film to light with a liquid provided on a positive chemically amplified resist film, a barrier film material for a barrier film formed between the resist film and the liquid includes a compound having an acid leaving group and a thermal acid generator.
摘要翻译：在利用设置在正性化学放大抗蚀剂膜上的液体将抗蚀剂膜曝光的情况下，形成在抗蚀剂膜和液体之间的阻挡膜用阻挡膜材料包括具有酸离子基团和热酸发生剂的化合物。

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