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141. 发明授权

US5070034A Process for producing a semiconductor memory device 失效
标题翻译：半导体存储器件的制造方法
公开(公告)号：US5070034A
公开(公告)日：1991-12-03
申请号：US590585
申请日：1990-09-28
申请人： Tamotsu Satoh , Takao Yonehara , Yoshio Nakamura
发明人： Tamotsu Satoh , Takao Yonehara , Yoshio Nakamura
IPC分类号： H01L27/10 , H01L21/20 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L27/12
CPC分类号： H01L27/10873 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/8221 , H01L27/10805 , H01L27/1203
摘要： A semiconductor memory device is provided with memory cells each having a capacitor for accumulating an electric charge and a transistor for charging and discharging the capacitor. The memory device comprises a substrate, an insulator layer formed thereon and a monocrystalline semiconductor layer formed thereon. The capacitor is composed of said monocrystalline semiconductor layer, the insulator layer and the substrate while the transistor is formed in the monocrystalline semiconductor layer.
摘要翻译：半导体存储器件设置有各自具有用于累积电荷的电容器和用于对电容器进行充电和放电的晶体管的存储单元。存储器件包括衬底，形成在其上的绝缘体层和形成在其上的单晶半导体层。电容器由所述单晶半导体层，绝缘体层和衬底组成，而晶体管形成在单晶半导体层中。

142. 发明授权

US4868140A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4868140A
公开(公告)日：1989-09-19
申请号：US212088
申请日：1988-06-27
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L27/00 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/3213 , H01L21/324 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/32055 , H01L21/32137 , H01L29/78675 , Y10S148/122
摘要： In a semiconductor device, an active layer is formed on an insulating substrate. The active layer is a polycrystalline semiconductor film having large diameter crystal grain. A carrier mobility of said polycrystalline semiconductor film is not lower than 10 cm.sup.2 /V.multidot.sec.
摘要翻译：在半导体器件中，在绝缘基板上形成有源层。有源层是具有大直径晶粒的多晶半导体膜。所述多晶半导体膜的载流子迁移率不低于10cm 2 / Vxsec。

143. 发明授权

US4800527A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4800527A
公开(公告)日：1989-01-24
申请号：US111588
申请日：1987-10-23
申请人： Masaharu Ozaki , Takao Yonehara
发明人： Masaharu Ozaki , Takao Yonehara
IPC分类号： H01L27/10 , H01L21/20 , H01L21/8242 , H01L27/108 , G11C13/00 , G11C11/24
CPC分类号： H01L27/10861 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/02639 , H01L21/02645 , H01L27/10832
摘要： A semiconductor memory device comprises: a charge holding capacitor formed on a semiconductor substrate; an insulating layer formed on the capacitor; and a transistor formed on a monocrystalline or substantially monocrystalline semiconductor layer, which is provided by forming, on the insulating layer, a hetero material of a nucleation density sufficiently higher than that of the insulating layer and of a size smaller enough to allow growth of a single nucleus of a semiconductor layer, followed by crystal growth around a single nucleus formed on the hetero material.
摘要翻译：半导体存储器件包括：形成在半导体衬底上的电荷保持电容器; 形成在电容器上的绝缘层; 以及形成在单晶或基本上单晶半导体层上的晶体管，其通过在绝缘层上形成的密度足够高于绝缘层的成核密度的异质材料和尺寸足够小以允许半晶体层的单核，随后在异质材料上形成的单个核周围生长晶体。

144. 发明授权

US08513093B2 Substrate structure including functional region and method for transferring functional region 有权
标题翻译：基底结构包括功能区和功能区转移方法
公开(公告)号：US08513093B2
公开(公告)日：2013-08-20
申请号：US13395202
申请日：2010-09-14
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/30 , H01L21/00
CPC分类号： B41J2/45 , H01L21/187 , H01L33/0079 , H01L2924/00013 , H01L2924/01057 , H01L2924/3025 , Y10T428/24802 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： According to a method for transferring a functional region, at least part of functional regions on separation layers arranged on a first substrate is transferred onto a second substrate, the separation layers being capable of being brought into a separable state by treatment. In a first bonding step, the first substrate is bonded to the second substrate with a dry film resist arranged between the second substrate and the at least part of the functional regions above the first substrate. In an exposure step, at least part of the dry film resist is exposed. In a patterning step, the exposed dry film resist is patterned.
摘要翻译：根据用于转移功能区域的方法，将布置在第一基板上的分离层上的功能区域的至少一部分转移到第二基板上，分离层能够通过处理进入分离状态。在第一接合步骤中，第一衬底与布置在第二衬底和第一衬底上的功能区域的至少部分之间的干膜抗蚀剂结合到第二衬底。在曝光步骤中，暴露干膜抗蚀剂的至少一部分。在图案化步骤中，将曝光的干膜抗蚀剂图案化。

145. 发明申请

US20120028414A1 METHOD OF MANUFACTURING SEMICONDUCTOR CHIP 有权
标题翻译：制造半导体芯片的方法
公开(公告)号：US20120028414A1
公开(公告)日：2012-02-02
申请号：US13262830
申请日：2010-04-02
申请人： Takao Yonehara , Kiyofumi Sakaguchi , Nobuo Kawase , Kenji Nakagawa
发明人： Takao Yonehara , Kiyofumi Sakaguchi , Nobuo Kawase , Kenji Nakagawa
IPC分类号： H01L21/50
CPC分类号： H01L25/0657 , H01L21/6835 , H01L24/94 , H01L2221/68318 , H01L2221/6835 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2225/06548 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2924/00
摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.
摘要翻译：制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离粘合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的反面的至少一部分，以露出电导体的底部。

146. 发明授权

US07944564B2 Device and method for acquiring information on objective substance to be detected by detecting a change of wavelength characteristics on the optical transmittance 有权
标题翻译：通过检测光透射率上的波长特性的变化来获取关于要检测的物质的信息的装置和方法
公开(公告)号：US07944564B2
公开(公告)日：2011-05-17
申请号：US12642446
申请日：2009-12-18
申请人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
发明人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
IPC分类号： G01N22/00
CPC分类号： G01N21/554 , G01N21/648 , G01N2021/258 , G01N2201/0635 , G01N2201/0636
摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.
摘要翻译：一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

147. 发明授权

US07772078B2 Germanium substrate-type materials and approach therefor 有权
标题翻译：锗衬底型材料及其方法
公开(公告)号：US07772078B2
公开(公告)日：2010-08-10
申请号：US12198838
申请日：2008-08-26
申请人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
发明人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
IPC分类号： H01L21/76
CPC分类号： H01L29/518 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/2807 , H01L21/28255 , H01L29/16 , H01L29/165 , H01L29/513 , H01L29/66575 , H01L29/94
摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
摘要翻译：锗电路型结构方便。在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

148. 发明申请

US20100197054A1 METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：US20100197054A1
公开(公告)日：2010-08-05
申请号：US12669790
申请日：2008-10-01
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/0079
摘要： A method for manufacturing a light emitting device according to the present invention has the steps of: preparing a first member which has an emission layer on a substrate having a compound semiconductor layer through an etch stop layer and a sacrifice layer; forming a bonded structure by bonding the first member on a second member including a silicon layer so that the emission layer is positioned in the inner side; providing a through groove in the substrate so that the etch stop layer is exposed, by etching the first member from the reverse side of the emission layer; and removing the substrate having the through groove provided therein from the bonded structure by etching the sacrifice layer.
摘要翻译：根据本发明的制造发光器件的方法具有以下步骤：通过蚀刻停止层和牺牲层来制备在具有化合物半导体层的衬底上具有发光层的第一构件; 通过将第一构件粘合在包括硅层的第二构件上以使得发射层位于内侧来形成接合结构; 通过从发射层的相反侧蚀刻第一构件，在衬底中提供通孔，使得蚀刻停止层暴露; 并且通过蚀刻牺牲层从接合结构去除其中设置有通孔的基板。

149. 发明申请

US20100097612A1 DEVICE AND METHOD FOR ACQUIRING INFORMATION ON OBJECTIVE SUBSTANCE TO BE DETECTED BY DETECTING A CHANGE OF WAVELENGTH CHARACTERISTICS ON THE OPTICAL TRANSMITTANCE 有权
标题翻译：通过检测光学传输波长特性的变化来获取有关物体的信息的设备和方法
公开(公告)号：US20100097612A1
公开(公告)日：2010-04-22
申请号：US12642446
申请日：2009-12-18
申请人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
发明人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
IPC分类号： G01N21/55
CPC分类号： G01N21/554 , G01N21/648 , G01N2021/258 , G01N2201/0635 , G01N2201/0636
摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.
摘要翻译：一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

150. 发明授权

US07341923B2 Substrate, manufacturing method therefor, and semiconductor device 失效
标题翻译：基板，其制造方法和半导体器件
公开(公告)号：US07341923B2
公开(公告)日：2008-03-11
申请号：US11039845
申请日：2005-01-24
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/30
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.
摘要翻译：在分离层上形成具有分离层和Ge层的第一衬底的步骤，以及通过绝缘层将第一衬底粘合到第二衬底上而形成键合衬底叠层的步骤，以及将第进行分离层的键合衬底叠层，从而获得具有GOI结构的衬底。

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