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131. 发明授权

US06055469A Fault determining device for torque transmission state sensor, and engine misfiring diagnosis device 失效
标题翻译：扭矩传递状态传感器故障判定装置，发动机失火诊断装置
公开(公告)号：US06055469A
公开(公告)日：2000-04-25
申请号：US886003
申请日：1997-07-03
申请人： Makoto Shoji , Masato Kobayashi
发明人： Makoto Shoji , Masato Kobayashi
IPC分类号： G01M15/04 , F02D45/00 , G05B9/02 , G06F19/00
CPC分类号： G05B9/02
摘要： A sensor which detects whether or not an engine output shaft and a vehicle drive shaft are in a predetermined connection state, is subjected to a fault determination when a predetermined condition holds. When the engine output shaft and vehicle drive shaft are constantly in this connection state from when the engine starts to when the above condition comes to hold, it is determined that a fault has occurred in the sensor. It is also determined whether or not the vehicle is running when the engine starts, and when the vehicle is running when the engine starts, fault determination is prohibited so as to avoid incorrect results.
摘要翻译：检测发动机输出轴和车辆驱动轴是否处于预定连接状态的传感器在预定条件成立时经受故障判定。当发动机输出轴和车辆驱动轴在从发动机起动到上述状态保持时始终处于连接状态时，确定传感器发生故障。还确定发动机起动时车辆是否运行，当发动机起动时车辆行驶时，禁止故障判定，以避免不正确的结果。

132. 发明授权

US5900324A Magnetic recording media, methods for producing the same and magnetic recorders 失效
标题翻译：磁记录介质，其制造方法和磁记录器
公开(公告)号：US5900324A
公开(公告)日：1999-05-04
申请号：US548863
申请日：1995-10-26
申请人： Keiji Moroishi , Takashi Sato , Jun-ichi Horikawa , Masato Kobayashi , Hisao Kawai , Osamu Nozawa
发明人： Keiji Moroishi , Takashi Sato , Jun-ichi Horikawa , Masato Kobayashi , Hisao Kawai , Osamu Nozawa
IPC分类号： G11B5/66 , G11B5/73 , G11B5/851
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/851 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12826
摘要： Disclosed are magnetic recording media comprising, on a substrate, two or more CrPt based magnetic layers and one or more CrMo based non-magnetic spacer layers between the magnetic layers and processes for preparation thereof. The magnetic recording media of the present invention include magnetic tapes and magnetic disks. The magnetic recording media are capable of suppressing noise generation upon reproducing recorded signals by employing magnetic layers having a small thickness. The magnetic recorders utilizing the above magnetic recording media are also disclosed.
摘要翻译：公开了一种磁记录介质，其在基板上包括两个或更多个基于CrPt的磁性层和在磁性层之间的一个或多个CrMo基非磁性间隔层及其制备方法。本发明的磁记录介质包括磁带和磁盘。通过采用具有小厚度的磁性层，磁记录介质能够抑制再现记录信号时的噪声产生。还公开了利用上述磁记录介质的磁记录器。

133. 发明授权

US5897379A Low temperature system and method for CVD copper removal 失效
标题翻译：低温系统和CVD铜去除方法
公开(公告)号：US5897379A
公开(公告)日：1999-04-27
申请号：US995112
申请日：1997-12-19
申请人： Bruce Dale Ulrich , Tue Nguyen , Masato Kobayashi
发明人： Bruce Dale Ulrich , Tue Nguyen , Masato Kobayashi
IPC分类号： C23F1/02 , C23F1/18 , H01L21/304 , H01L21/306 , H01L21/3205 , H01L21/3213 , B44C1/22 , H01L21/308
CPC分类号： H01L21/32134 , C23F1/18 , H01L21/02063 , H01L21/02087 , H01L21/3212 , H01L21/6708
摘要： A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.
摘要翻译：提供了使用稀硝酸和边缘珠除去工具从半导体晶片的周边去除铜的方法。在一个实施例中，在施加酸之前，晶片的敏感区域被光致抗蚀剂覆盖，并且晶片外围的光致抗蚀剂被清除。在另一个实施例中，当施加铜蚀刻剂时，晶片的敏感区域被水喷雾保护。在第三实施例中，在对沉积的铜层进行化学机械抛光（CMP）之前，施加硝酸以清除铜的晶片周边。铜的过剩厚度保护铜互连结构不与铜蚀刻剂反应。所有这些方法允许铜在没有形成铜氧化物的足够低的温度下被去除。还提供了根据上述方法清洁铜的半导体晶片和用于低温铜去除的系统。

134. 发明授权

US5746893A Method of manufacturing magnetic recording medium 失效
公开(公告)号：US5746893A
公开(公告)日：1998-05-05
申请号：US575019
申请日：1995-12-19
申请人： Masato Kobayashi , Osamu Nozawa , Hisao Kawai , Keiji Moroishi , Takashi Sato , Junichi Horikawa
发明人： Masato Kobayashi , Osamu Nozawa , Hisao Kawai , Keiji Moroishi , Takashi Sato , Junichi Horikawa
IPC分类号： G11B5/66 , G11B5/73 , G11B5/851 , C23C14/34
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/851
摘要： A method of manufacturing a magnetic recording medium by using an in-line sputtering apparatus to successively form, on a substrate, at least one underlying layer, a first magnetic CoPt-based film, a nonmagnetic intermediate film, and a second magnetic CoPt-based film. The underlying film and/or the nonmagnetic film, which are in contact with the first magnetic film, are deposited at a low sputtering power between 100 and 1000 watts to improve the magnetic properties of the magnetic recording medium. Low power sputtering is also effective to improve the distribution of difference of the crystal lattice spacings between the nonmagnetic intermediate film and the first magnetic film and between the underlying layer and the first magnetic film.

135. 发明授权

US5744192A Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS 失效
标题翻译：使用水蒸气增加铜（hfac）TMVS沉积铜的电导率的方法
公开(公告)号：US5744192A
公开(公告)日：1998-04-28
申请号：US745562
申请日：1996-11-08
申请人： Tue Nguyen , Yoshihide Senzaki , Masato Kobayashi , Lawrence J. Charneski , Sheng Teng Hsu
发明人： Tue Nguyen , Yoshihide Senzaki , Masato Kobayashi , Lawrence J. Charneski , Sheng Teng Hsu
IPC分类号： C01G3/00 , C23C16/18 , C23C16/448 , C23C16/52 , H01L21/28 , H01L21/285 , H01L21/60 , B05D5/12 , C23C16/04
CPC分类号： C23C16/4481 , C23C16/18 , H01L2924/0002
摘要： A method of blending water vapor with volatile Cu(hfac)TMVS (copper hexafluoroacetylacetonate trimethylvinylsilane) is provided which improves the deposition rate of Cu, without degrading the resistivity of the Cu deposited upon an integrated circuit surface. The method of the present invention uses a relatively small amount of water vapor, approximately 0.3 to 3% of the total pressure of the system in which chemical vapor deposition (CVD) Cu is applied. The method specifies the flow rates of the liquid precursor, carrier gas, and liquid water. The method also specifies the pressures of the vaporized precursor, vaporized precursor blend including carrier gas and water vapor. In addition, the temperatures of the vaporizers, chamber walls, and IC surfaces are disclosed. A Cu precursor blend is also provided comprising vaporized Cu(hfac)TMVS and water vapor. The ratio of water vapor pressure to vaporized precursor is approximately 0.5 to 5%. Further, an IC surface covered with Cu applied with a Cu precursor blend including vaporized Cu(hfac)TMVS and water vapor, with the above mentioned ratio of water vapor pressure to volatile Cu(hfac)TMVS pressure, is provided.
摘要翻译：提供了将水蒸汽与挥发性Cu（hfac）TMVS（六氟乙酰丙酮酸铜三甲基乙烯基硅烷）共混的方法，其改善了Cu的沉积速率，而不降低沉积在集成电路表面上的Cu的电阻率。本发明的方法使用相对少量的水蒸气，其中施加化学气相沉积（CVD）Cu的系统的总压力的大约0.3至3％。该方法规定了液体前体，载气和液态水的流量。该方法还规定了蒸发的前体，蒸发的前体共混物包括载气和水蒸气的压力。此外，公开了蒸发器，室壁和IC表面的温度。还提供了包含蒸发的Cu（hfac）TMVS和水蒸气的Cu前体共混物。水蒸气压与汽化前体的比率约为0.5〜5％。此外，提供了用Cu涂覆Cu包含蒸发的Cu（hfac）TMVS和水蒸气的Cu前体共混物的IC表面，具有上述的水蒸气压与挥发性Cu（hfac）TMVS压力的比率。

136. 发明授权

US5005075A X-ray mask and method of manufacturing an X-ray mask 失效
标题翻译： X射线掩模和X射线掩模的制造方法
公开(公告)号：US5005075A
公开(公告)日：1991-04-02
申请号：US487771
申请日：1990-01-30
申请人： Masato Kobayashi , Yoh-Ichi Yamaguchi , Minoru Sugawara , Kazuhide Yamashiro
发明人： Masato Kobayashi , Yoh-Ichi Yamaguchi , Minoru Sugawara , Kazuhide Yamashiro
IPC分类号： G03F1/22 , H01L21/027
CPC分类号： G03F1/22
摘要： In a method of manufacturing an X-ray mask comprising a substrate, an X-ray transmission layer on the substrate, an X-ray absorption layer on the X-ray transmission layer, the X-ray transmission layer is flattened to remove undulation and to make roughness of the X-ray transmission layer smaller than 100 angstroms. The X-ray transmission layer may be formed by silicon carbide or silicon nitride. Alternatively, the X-ray transmission layer may have a multilayer structure of sandwiched structure comprising either a silicon carbide film or a silicon nitride film.

137. 发明授权

US4462057A A.C. Switching circuit 失效
标题翻译：交流电路
公开(公告)号：US4462057A
公开(公告)日：1984-07-24
申请号：US412244
申请日：1982-08-27
申请人： Masato Kobayashi , Hideki Fukuzono , Hiromi Nishimura
发明人： Masato Kobayashi , Hideki Fukuzono , Hiromi Nishimura
IPC分类号： H01H9/56 , H01H9/54 , H02H3/00 , H02H7/00
CPC分类号： H01H9/541
摘要： A.C. switching circuit capable of opening and closing contacts without generating any arc. When D.C. source restores from its interruption, the contacts are maintained in or shifted to a predetermined state. A change-over switch is provided for selecting as required whether the contacts are to be forcibly opened or closed after the D.C. source interruption, or whether the previous state of the contacts is to be maintained.
摘要翻译： A.C.切换电路能够打开和关闭触点而不产生任何电弧。当直流源从其中断恢复时，触点被保持在或转移到预定状态。提供转换开关用于根据需要选择是否在直流源中断之后强制打开或关闭触点，或者是否保持触点的先前状态。

138. 发明授权

US09287539B2 Manufacturing method for battery case lid including explosion-proof valve 有权
标题翻译：电池盒盖包括防爆阀的制造方法
公开(公告)号：US09287539B2
公开(公告)日：2016-03-15
申请号：US13879363
申请日：2011-08-22
申请人： Takayuki Sode , Yukinori Sugiyama , Shinichi Nomura , Masato Kobayashi
发明人： Takayuki Sode , Yukinori Sugiyama , Shinichi Nomura , Masato Kobayashi
IPC分类号： H01M2/12 , B21C23/18 , B21D11/08 , B21D51/44 , B21K23/00 , B21D51/38 , H01M2/04
CPC分类号： H01M2/1241 , B21C23/186 , B21D11/08 , B21D51/383 , B21D51/44 , B21K23/00 , H01M2/0426
摘要： Provided is a battery case lid (1) formed by working a metal plate, including: a substrate section (2) and an explosion-proof valve (4) formed in the substrate section (2), wherein the explosion-proof valve (4) has a reduced thickness section (41) thinner than the substrate section (2), and the reduced thickness section (41) is formed by extending the metal plate by applying pressure while the metal plate is kept unrestrained.
摘要翻译：本发明提供一种通过加工金属板而形成的电池盒盖（1），其特征在于，包括：基板部（2）和形成于基板部（2）的防爆阀（4），其中，防爆阀）具有比基板部分（2）更薄的厚度减小的部分（41），并且通过在金属板保持不受约束的同时通过施加压力来延伸金属板而形成减小厚度部分（41）。

139. 发明授权

US08965249B2 Charging device configured to produce corona discharge 有权
标题翻译：配置为产生电晕放电的充电装置
公开(公告)号：US08965249B2
公开(公告)日：2015-02-24
申请号：US14139190
申请日：2013-12-23
申请人： Hidekazu Nogami , Masato Kobayashi
发明人： Hidekazu Nogami , Masato Kobayashi
IPC分类号： G03G15/02
CPC分类号： G03G15/0291 , G03G15/0225 , G03G2215/027
摘要： A charging device includes a discharging electrode, grid electrode, pair of shielding electrodes, frame, airflow-generating electrode, and impurity-removing member. The discharging electrode produces a corona discharge to charge a surface of photosensitive member. A first voltage is applied to the grid electrode. The discharging electrode is positioned between the shielding electrodes. The frame includes a pair of side walls confronting with each other in the moving direction. The discharging electrode and the pair of shielding electrodes are positioned between the side walls. The airflow-generating electrode is disposed at a position opposite to the discharging electrode with respect to the grid electrode. The airflow-generating electrode is applied with a second voltage lower than the first voltage. The impurity-removing member is provided on an inner surface of the frame. The impurity-removing member and the airflow-generating electrode are positioned on an identical side of the shielding electrodes in the moving direction.
摘要翻译：充电装置包括放电电极，栅极，一对屏蔽电极，框架，气流发生电极和杂质去除构件。放电电极产生电晕放电以对感光构件的表面充电。第一电压施加到栅电极。放电电极位于屏蔽电极之间。框架包括在移动方向上彼此相对的一对侧壁。放电电极和一对屏蔽电极位于侧壁之间。气流发生电极相对于栅电极配置在与放电电极相反的位置。气流产生电极施加的电压低于第一电压。杂质去除构件设置在框架的内表面上。杂质除去部件和气流发生电极位于与移动方向的屏蔽电极相同的一侧。

140. 发明授权

US08955225B2 Method for producing an actuator 有权
标题翻译：致动器的制造方法
公开(公告)号：US08955225B2
公开(公告)日：2015-02-17
申请号：US13581174
申请日：2011-11-14
申请人： Masato Kobayashi , Tomoharu Saito , Shinji Fujita , Takanori Tanaka
发明人： Masato Kobayashi , Tomoharu Saito , Shinji Fujita , Takanori Tanaka
IPC分类号： B21D53/10 , C21D7/06 , F16C33/02 , F16H25/22 , B24C1/04 , B24C1/10 , B24C11/00 , F16C33/66 , F16C19/36 , F16C33/36
CPC分类号： F16H25/22 , B24C1/04 , B24C1/10 , B24C11/00 , F16C19/364 , F16C33/366 , F16C33/6651 , F16C2223/08 , F16C2240/40 , F16C2240/44 , Y10T29/479 , Y10T29/49636 , Y10T29/49705 , Y10T29/49707 , Y10T74/19744
摘要： In forming an actuator, a large end surface of a tapered roller of a tapered roller bearing is shot with minute particles of silicon carbide having a diameter of 0.5 to 100 μm and having an angle formed by crushing, and such a surface is scraped concavely at a diameter within a range from 0.5 to 100 μm to form a large number of concavities having a depth of equal to or greater than 1 μm at a pitch of equal to or less than 200 μm. The concavities are non-continuous and isolated from each other, and serve as a lubricant puddle. The concavities are formed by scraping and not by plastic deformation, and thus the surface is not hardened.
摘要翻译：在形成致动器时，圆锥滚子轴承的圆锥滚子的大端面用直径为0.5至100μm的微小的碳化硅颗粒喷射，并且具有通过破碎形成的角度，并且将这种表面凹入地刮下直径在0.5至100μm的范围内，以等于或小于200μm的间距形成深度等于或大于1μm的大量凹部。凹凸不连续，彼此隔离，并作为润滑剂水坑。凹凸由刮削而不是塑性变形而形成，因此表面不硬化。

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