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    • 132. 发明申请
    • Molecular beam source for use in accumulation of organic thin-films
    • 用于有机薄膜积累的分子束源
    • US20050247267A1
    • 2005-11-10
    • US11183720
    • 2005-07-18
    • Osamu KobayashiTateo Saito
    • Osamu KobayashiTateo Saito
    • C30B23/08C23C14/24C23C16/00C30B23/06C30B29/54
    • C30B29/54C23C14/243C30B23/063
    • A molecular beam source for use in accumulation of organic thin-films, for enabling forming of a uniform thin-film on film-forming surfaces of a large-sized substrate, but without producing deposition or separation of a film-forming material in an opening for discharging molecules of the film-forming material, wherein a valve 33 is disposed in a space staring from a side of a molecule heating portion 12 and reaching to a molecule discharge opening 14 for discharging the generated molecules of the film-forming material towards a film-forming surface, and further heaters 18 and 19 are provided at a side of the molecule discharge opening 14, for heating the molecules of the film-forming material to be discharged from. At the side of the molecule discharge opening 14 are provided an exterior guide 13 having a taper-like guide wall, and also an interior guide 16 having a taper-like guide wall, which is provided within an inside of the exterior guide. Between those exterior guide 13 and interior guide 16, there is formed such a molecule discharge passage 17, that the diameter thereof gradually increases along a direction of discharging the molecules therefrom. Those heaters 18 and 19 are provided on the exterior guide 13 and the interior guide 16, respectively, and further, other than that, there is provide a heater 20 penetrating through the molecule discharge opening 14, whereby narrow and/or blockage hardly occur in the discharge opening.
    • 用于积聚有机薄膜的分子束源,用于在大尺寸基板的成膜表面上形成均匀的薄膜,但不会在开口中产生成膜材料的沉积或分离 用于排出成膜材料的分子,其中阀33设置在从分子加热部分12的侧面开始并到达分子排出口14的空间中,用于将所产生的成膜材料的分子朝向 成膜表面,并且在分子排出口14侧设置另外的加热器18和19,用于加热待排出的成膜材料的分子。 在分子排出口14的侧面设置有具有锥形导向壁的外部引导件13,以及设置在外部引导件内部的具有锥形引导壁的内部引导件16。 在这些外部引导件13和内部引导件16之间,形成这样的分子排出通道17,其直径沿着从其排出分子的方向逐渐增加。 这些加热器18和19分别设置在外部引导件13和内部引导件16上,而且除此之外,还提供了穿过分子排出口14的加热器20,由此几何不会发生狭窄和/或阻塞 排放口。
    • 135. 发明授权
    • Inductor
    • 电感器
    • US06798329B2
    • 2004-09-28
    • US10420881
    • 2003-04-23
    • Osamu KobayashiOsamu YamadaYukio SuzukiKiyoshi ItoMayuka Shirai
    • Osamu KobayashiOsamu YamadaYukio SuzukiKiyoshi ItoMayuka Shirai
    • H01F2724
    • H01F17/04H01F1/344
    • In an inductor comprising an open magnetic path formed by a soft magnetic material and a winding provided around the open magnetic path, the soft magnetic material has its relative complex dielectric constant varying according to a frequency. In the soft magnetic material, the imaginary part of the relative complex dielectric constant is greater than the real part thereof in a high-frequency band equal higher than the frequency of the electric signal flowing in the winding. Specifically, the soft magnetic material has a resistivity of 150 &OHgr;m, has a real part of the relative complex dielectric constant, ranging from 1,000 to 20,000 at 1 kHz and 50 or less at 1 MHz, and the imaginary part is greater than the real part at 1 MHz.
    • 在包括由软磁材料形成的开放磁路和围绕开放磁路设置的绕组的电感器中,软磁材料具有根据频率而变化的其相对复合介电常数。 在软磁性材料中,相对复合介电常数的虚部比在绕组中流动的电信号的频率高的高频带大于其实部。 具体地说,软磁材料的电阻率为150欧姆,具有相对复介电常数的实部,1kHz为1,000〜20,000,1MHz为50以下,虚部大于实部 在1MHz。
    • 139. 发明授权
    • Process for producing Mn-Zn ferrite
    • 生产Mn-Zn铁氧体的方法
    • US06403017B1
    • 2002-06-11
    • US09442389
    • 1999-11-18
    • Osamu KobayashiOsamu YamadaKoji HondaShunji Kawasaki
    • Osamu KobayashiOsamu YamadaKoji HondaShunji Kawasaki
    • C04B3538
    • H01F1/344C01G49/009C04B35/265C04B35/2658
    • A process for producing Mn—Zn ferrite having large electrical resistance and being durable to the use in high frequency region exceeding 1 MHz easily and at low cost is disclosed. The process comprises pressing a mixed powder comprising a composition of 44.0 to 50.0 mol % of Fe2O3, 4.0 to 26.5 mol % of ZnO, 0.1 to 8.0 mol % of at least one member selected from the group consisting of TiO2 and SnO2, and the remainder being MnO, and if desired 0.1 to 16.0 mol % of CuO, sintering the resulting green compact in the air or an atmosphere containing an appropriate amount of oxygen, and then cooling the green compact, thereby securing the estimated high initial permeability even in a high frequency region of 1 MHz or more.
    • 公开了一种用于制造具有大电阻并且耐用于在容易且低成本地超过1MHz的高频区域中的Mn-Zn铁氧体的方法。 该方法包括将包含Fe2O3为44.0〜50.0摩尔%,ZnO为4.0〜26.5摩尔%,0.1〜8.0摩尔%的选自TiO 2和SnO 2中的至少一种的组成的混合粉末,其余为 为MnO,如果需要,为0.1〜16.0mol%的CuO,在空气或含有适量氧气的气氛中烧结得到的生坯,然后冷却生坯,从而确定了估计的高初始渗透率即使在高 频率区域为1MHz以上。