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    • 135. 发明授权
    • Method for manufacturing solar cell module
    • 制造太阳能电池组件的方法
    • US08415195B2
    • 2013-04-09
    • US13319396
    • 2010-05-14
    • Hideaki OkumiyaSatoshi YamamotoMasao Saito
    • Hideaki OkumiyaSatoshi YamamotoMasao Saito
    • H01L21/00H01L29/80
    • H01L31/188B32B17/10018B32B17/10788B32B17/10871H01L31/02008H01L31/048H01L31/0512Y02E10/50
    • In manufacturing of a solar cell module in which a solar cell having a surface electrode to which a tab lead is connected is sealed with a resin, the step of connecting the tab lead and the step of sealing the solar cell with the resin are performed simultaneously at a relatively low temperature that is used for the resin sealing step. To perform these steps simultaneously, the solar cell having the surface electrode to which the tab lead is connected with an adhesive is resin-sealed using a vacuum laminator to manufacture the solar cell module. The vacuum laminator used includes a first chamber and a second chamber partitioned by a flexible sheet. The internal pressures of these chambers can be controlled independently, and a heating stage for heating is provided in the second chamber.
    • 在其中用树脂密封具有连接有引线的表面电极的太阳能电池的太阳能电池模块的制造中,同时执行连接片状引线的步骤和用树脂密封太阳能电池的步骤 在用于树脂密封步骤的较低温度下。 为了同时执行这些步骤,使用真空层压机对具有突片引线与粘合剂连接的表面电极的太阳能电池进行树脂密封以制造太阳能电池模块。 使用的真空层压机包括由柔性片分隔开的第一室和第二室。 可以独立地控制这些室的内部压力,并且在第二室中设置用于加热的加热阶段。
    • 137. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US08211751B2
    • 2012-07-03
    • US12810279
    • 2008-12-12
    • Satoshi YamamotoHirokazu Hashimoto
    • Satoshi YamamotoHirokazu Hashimoto
    • H01L21/50
    • B81C1/00317B81C2201/0104B81C2201/0108B81C2201/0125B81C2203/0118B81C2203/0145H01L27/14618H01L27/14627H01L27/14683H01L2924/0002H01L2924/00
    • A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.
    • 一种制造半导体器件的方法包括:将具有光学透明性的第一衬底和第二衬底接合的接合步骤,其中功能元件彼此设置在其上,使得功能元件面向第一衬底; 减薄所述第一和第二基板中的至少一个的薄化步骤; 以及通孔形成步骤,在第一和第二基板之间的接合部分的至少一部分中形成与空腔连通的空腔和通孔。 根据本发明,可以防止由于空腔的存在或不存在引起的不规则或裂纹,并且更规则地使基板变薄。 此外,可以使用更方便的工艺来制造能够有助于具有该器件的器件和电子设备的小型化的半导体器件。
    • 139. 发明申请
    • RESIST PROCESSING METHOD AND USE OF POSITIVE TYPE RESIST COMPOSITION
    • 电阻加工方法和正极型电阻组合物的使用
    • US20110183264A1
    • 2011-07-28
    • US13063670
    • 2009-09-08
    • Kazuhiko HashimotoMitsuhiro HataSatoshi Yamamoto
    • Kazuhiko HashimotoMitsuhiro HataSatoshi Yamamoto
    • G03F7/004G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. wherein, Ra1 represents a hydrogen atom, a halogen atom or a C1 to C3 saturated hydrocarbon group which may be substituted with a halogen atom; Ra2 represents a single bond or a divalent organic group; Ra3 represents a hydrogen atom, a C1 to C12 saturated hydrocarbon group which may be substituted with a hydroxy group etc., and Ra4 represent a C1 to C12 saturated hydrocarbon group.
    • 抗蚀剂处理方法具有以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:包含由式(XX)表示的结构单元并具有酸不稳定基团的树脂(A) 在碱性水溶液中不溶或难溶,并且通过酸的作用使碱溶液和光酸产生剂(B)溶解在基材上并干燥; (2)预烘第一抗蚀膜; (3)曝光第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)对第一抗蚀剂图案进行硬烘烤,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上,然后干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。 其中,Ra1表示氢原子,卤素原子或可被卤素原子取代的C1〜C3饱和烃基; Ra2表示单键或二价有机基团; Ra3表示氢原子,可被羟基取代的C1〜C12饱和烃基等,Ra4表示C1〜C12饱和烃基。