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131. 发明授权

US4984054A Electric fuse for a redundancy circuit 失效
标题翻译：电熔丝用于冗余电路
公开(公告)号：US4984054A
公开(公告)日：1991-01-08
申请号：US481683
申请日：1990-02-20
申请人： Michihiro Yamada , Hiroshi Miyamoto , Tadato Yamagata , Shigeru Mori
发明人： Michihiro Yamada , Hiroshi Miyamoto , Tadato Yamagata , Shigeru Mori
IPC分类号： H01L21/82 , H01H37/76 , H01L21/3205 , H01L23/525 , H01L27/10
CPC分类号： H01L23/5256 , H01L2924/0002
摘要： The present invention comprises a field oxide film formed on a silicon substrate, an underlying film of polycrystal silicon formed on a portion thereof and an insulating film formed so as to cover the field oxide film comprising the underlying film. A surface stepped portion of the insulating film is formed by a portion with an underlying film and a portion without an underlying film under the insulating film, and a blowout portion of a fuse is formed along the surface stepped portion. There are terminal portions at both ends of the blowout portion of the fuse and an aluminum line is connected thereto. In addition, the whole portions comprising the fuse portion are covered with another insulating film and the whole is protected. The fuse is employed as one example in a redundancy circuit of a MOS dynamic RAM having redundancy memory cells.
摘要翻译：本发明包括形成在硅衬底上的场氧化物膜，形成在其一部分上的多晶硅的下面的膜和形成为覆盖包括下面的膜的场氧化物膜的绝缘膜。绝缘膜的表面阶梯部分由具有下面的膜的部分和在绝缘膜下方没有下面的膜的部分形成，并且沿表面台阶形成熔丝的吹出部分。在保险丝的吹出部分的两端有端子部分，铝线连接到其上。此外，包括熔丝部分的整个部分被另一绝缘膜覆盖，并且整体被保护。在具有冗余存储单元的MOS动态RAM的冗余电路中采用熔丝作为一个例子。

132. 发明授权

US4904885A Substrate bias circuit having substrate bias voltage clamp and operating method therefor 失效
标题翻译：具有衬底偏置电压钳的衬底偏置电路及其操作方法
公开(公告)号：US4904885A
公开(公告)日：1990-02-27
申请号：US204126
申请日：1988-06-06
申请人： Michihiro Yamada , Hiroshi Miyamoto , Tadato Yamagata , Shigeru Mori , Tetsuya Aono
发明人： Michihiro Yamada , Hiroshi Miyamoto , Tadato Yamagata , Shigeru Mori , Tetsuya Aono
IPC分类号： G11C11/407 , G05F3/20 , G11C11/4074 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H03K19/094
CPC分类号： G11C11/4074 , G05F3/205
摘要： A substrate bias circuit controls application of a conventional substrate charge pump to the substrate of a semiconductor integrated circuit to prevent latching up of parasitic transistors at the time of turn on of power to the integrated circuit. The substrate bias circuit comprises a filed effect transistor having its source and drain electrodes connected between substrate and charge pump. The gate electrode of the transistor is driven through an RC circuit by the power supply to turn on the transistor for a predetermined time period at the time power is initially applied to the integrated circuit. There is no latching up of the parasitic transistors because application of positive bias voltage to the substrate during turn-on is prevented.
摘要翻译：衬底偏置电路控制将常规衬底电荷泵施加到半导体集成电路的衬底，以防止在集成电路接通电源时寄生晶体管的锁存。衬底偏置电路包括场效应晶体管，其源极和漏极连接在衬底和电荷泵之间。晶体管的栅极通过电源通过RC电路驱动，以在初始施加到集成电路的时间将晶体管导通预定时间段。寄生晶体管没有锁存，因为防止了在接通期间向衬底施加正偏置电压。

133. 发明授权

US4884879A Lens system for projection television receivers 失效
标题翻译：投影电视接收机镜头系统
公开(公告)号：US4884879A
公开(公告)日：1989-12-05
申请号：US911070
申请日：1986-09-24
申请人： Kyohei Fukuda , Soichi Sakurai , Koji Hirata , Shigeru Mori
发明人： Kyohei Fukuda , Soichi Sakurai , Koji Hirata , Shigeru Mori
IPC分类号： H04N5/74 , G02B13/16 , G02B13/18
CPC分类号： G02B9/34 , G02B13/16 , G02B13/18
摘要： An optical system of a projection television receiver for projecting pictures from a picture tube onto a screen, comprising a fluorescent face constituting the tube face of the receiver tube having a nonspherical shape in such a direction as to compensate the curve of the image face of the projected picture on the screen, and further comprising lenses arranged from the screen side to the tube face of the picture tube in the order of:(A) a first lens having relatively weak power (reciprocal of focal distance) and having a nonspherical shape at least at one face;(B) a second lens having relatively strong positive power;(C) a third lens having relatively weak power and having a nonspherical shape at least at one face; and(D) a fourth lens having relatively strong negative power and having a concave shape at the face of the screen side.
摘要翻译：一种投影电视接收机的光学系统，用于将图像从显像管投影到屏幕上，包括构成接收管的管面的荧光面，其方向具有非球面形状，以补偿图像的图像面的曲线并且还包括从屏幕侧到显像管的管面布置的透镜，其顺序为：（A）具有相对弱的功率（焦距的往复）并且具有非球面形状的第一透镜最少在一个脸上（B）具有相对较强正功率的第二透镜; （C）至少在一个面上具有较弱功率并具有非球形形状的第三透镜; 和（D）具有相对较强的负功率并且在屏幕侧的表面具有凹形形状的第四透镜。

134. 发明授权

US4840739A Adhesive grease composition comprising a random copolymer of ethylene and an alpha-olefin 失效
标题翻译：粘合剂润滑脂组合物，其包含乙烯和α-烯烃的无规共聚物
公开(公告)号：US4840739A
公开(公告)日：1989-06-20
申请号：US169038
申请日：1988-03-16
申请人： Shigeru Mori , Takayuki Takahashi
发明人： Shigeru Mori , Takayuki Takahashi
IPC分类号： C10M169/00 , C10M169/02 , C10N40/02 , C10N50/10
CPC分类号： C10M169/02 , C10M169/00 , C10M2201/041 , C10M2201/0416 , C10M2201/042 , C10M2201/0426 , C10M2201/0606 , C10M2201/0616 , C10M2201/062 , C10M2201/0626 , C10M2201/0656 , C10M2201/0666 , C10M2201/0806 , C10M2201/0856 , C10M2201/0866 , C10M2201/0876 , C10M2201/1013 , C10M2201/1026 , C10M2201/103 , C10M2201/1036 , C10M2201/105 , C10M2201/14 , C10M2201/145 , C10M2205/00 , C10M2205/02 , C10M2205/0206 , C10M2205/0245 , C10M2205/0265 , C10M2205/0285 , C10M2207/1225 , C10M2207/1245 , C10M2207/125 , C10M2207/1265 , C10M2207/1285 , C10M2207/129 , C10M2207/166 , C10M2207/186 , C10M2207/206 , C10M2207/246 , C10M2207/282 , C10M2207/2825 , C10M2207/285 , C10M2207/2855 , C10M2207/286 , C10M2207/34 , C10M2211/06 , C10M2213/02 , C10M2213/062 , C10M2215/006 , C10M2215/026 , C10M2215/0813 , C10M2215/1013 , C10M2215/102 , C10M2215/1026 , C10M2215/121 , C10M2215/22 , C10M2215/2206 , C10M2215/221 , C10M2215/225 , C10M2215/226 , C10M2215/227 , C10M2215/2275 , C10M2215/30 , C10M2229/02 , C10M2229/025 , C10M2229/04 , C10M2229/0405 , C10M2229/041 , C10M2229/0415 , C10M2229/042 , C10M2229/0425 , C10M2229/043 , C10M2229/0435 , C10M2229/044 , C10M2229/0445 , C10M2229/045 , C10M2229/0455 , C10M2229/046 , C10M2229/0465 , C10M2229/047 , C10M2229/0475 , C10M2229/048 , C10M2229/0485 , C10M2229/05 , C10M2229/0505 , C10M2229/051 , C10M2229/0515 , C10M2229/052 , C10M2229/0525 , C10M2229/053 , C10M2229/0535 , C10M2229/054 , C10M2229/0545 , C10N2210/01
摘要： An adhesive grease composition comprises a random copolymer of ethylene and an alpha-olefin having the following formula ##STR1## wherein R represents a lower alkyl group, x and y are, respectively, an integer provided that x/y=0.5 to 2.0 and x+y=50 to 150, and a thickening agent in defined amounts.
摘要翻译：粘合剂润滑脂组合物包含乙烯和具有下式的α-烯烃的无规共聚物，其中R表示低级烷基，x和y分别是整数，条件是x / y = 0.5〜2.0，x + y = 50〜150，加稠剂为规定量。

135. 发明授权

US4824224A Lens system for a cathode ray tube projection system 失效
标题翻译：用于阴极射线管投影系统的透镜系统
公开(公告)号：US4824224A
公开(公告)日：1989-04-25
申请号：US948251
申请日：1986-12-31
申请人： Kyohei Fukuda , Hiroki Yoshikawa , Shigeru Mori , Koji Hirata , Soichi Sakurai
发明人： Kyohei Fukuda , Hiroki Yoshikawa , Shigeru Mori , Koji Hirata , Soichi Sakurai
IPC分类号： H04N5/74 , G02B3/04 , G02B9/34 , G02B9/60 , G02B13/16 , G02B13/18 , G02B3/02 , H04N5/72
CPC分类号： G02B9/34 , G02B13/16 , G02B13/18 , G02B3/04
摘要： An improved lens system for a projection television is described. The lens system is designed to be used with a cathode ray tube having a face glass with an aspheric surface having phosphor elements mounted thereto. The aspheric surface of the face glass has its maximum radius at the optical axis and is of lesser radius outwardly thereof. From the screen, the lens system companies a first aspheric lens of relatively weak power, a second biconvex lens of relatively high positive power, a third aspheric lens of weak positive power and a fourth lens having a concave face on its screen sider and of relatively large negative power.
摘要翻译：描述了用于投影电视的改进的透镜系统。透镜系统设计成与具有带有安装有荧光体元件的非球面的面玻璃的阴极射线管一起使用。面玻璃的非球面表面在光轴处具有最大半径，并且其外侧具有较小的半径。从屏幕上看，透镜系统公司具有功率相对较弱的第一非球面透镜，具有相对高正功率的第二双凸透镜，弱正功率的第三非球面透镜和在屏幕上具有凹面的第四透镜，并且相对大负功率

136. 发明授权

US4755310A Silicone grease composition containing a chlorinated alicyclic compound 失效
标题翻译：含有氯化脂环族化合物的硅油组合物
公开(公告)号：US4755310A
公开(公告)日：1988-07-05
申请号：US55182
申请日：1987-05-28
申请人： Shigeru Mori , Masanobu Kimura
发明人： Shigeru Mori , Masanobu Kimura
IPC分类号： C10M169/00 , C10M169/02 , C10N30/06 , C10N30/08 , C10N40/20 , C10N50/10 , C10M131/06 , C10M103/00
CPC分类号： C10M169/00 , C10M2207/1245 , C10M2207/125 , C10M2207/129 , C10M2211/06 , C10M2213/02 , C10M2213/062 , C10M2229/025 , C10M2229/0405 , C10M2229/041 , C10M2229/0415 , C10M2229/0425 , C10M2229/0435 , C10M2229/0445 , C10M2229/0455 , C10M2229/0465 , C10M2229/0475 , C10M2229/0485 , C10M2229/0505 , C10M2229/0515 , C10M2229/0525 , C10M2229/0535 , C10M2229/0545 , C10N2210/01 , C10N2220/02
摘要： The inventive silicone grease composition has markedly improved lubrication characteristics under extreme-pressure conditions, greatly extended durability at high temperatures and little corrosiveness against metals in comparison with conventional silicone greases. The inventive silicone grease composition contains, in addition to an organopolysiloxane fluid as the base oil and a thickening agent, a specific chlorinated alicyclic compound 1,2,3,4,7,8,9,10,13,13,14,14-dodecachloro-1,4,4a,5,6a,7,10,10a,11,12,12a-dodecahydro-1,4;7,10-dimethanodibenzo [a,e] cyclooctane in a substantial amount.
摘要翻译：本发明的硅润滑脂组合物在极压条件下具有显着改善的润滑特性，与常规硅油相比，在高温下大大延长了耐久性，对金属的腐蚀性小。本发明的硅油组合物除了作为基础油的有机聚硅氧烷流体和增稠剂外，还含有特定的氯化脂环族化合物1,2,3,4,7,8,9,10,13,13,14,14 十二氯-1,4,4a，5,6a，7,10,10a，11,12,1,2-二十氢-1,4; 7,10-二甲基二苯并[a，e]环辛烷。

137. 发明授权

US4560784A Heat-resistant organopolysiloxane composition 失效
标题翻译：耐热有机聚硅氧烷组合物
公开(公告)号：US4560784A
公开(公告)日：1985-12-24
申请号：US697793
申请日：1985-02-04
申请人： Shigeru Mori , Yasuo Tarumi
发明人： Shigeru Mori , Yasuo Tarumi
IPC分类号： C08K5/00 , C08G77/398 , C08K5/04 , C08K5/09 , C08L83/00 , C08L83/04 , C07F7/08 , C07F7/10 , C07F7/18
CPC分类号： C08G77/398 , C08L83/04
摘要： The organopolysiloxane composition, e.g. silicone fluid, of the invention is imparted with high heat resistance by admixing with a specific heat-resistance improver which is prepared by a heat treatment of a mixture composed of (a) 100 parts by weight of an organopolysiloxane having a specified viscosity, (b) a carboxylate of cerium such as 2-ethylhexoate in an amount of 0.05 to 5 parts by weight as cerium and (c) an alkoxide compound of titanium or zirconium such as tetrabutyl titanate in an amount to give 0.1 to 5 times by weight of the titanium or zirconium element based on the cerium content in the component (b) at a temperature of, for example, 150.degree. to 310.degree. C. for 30 minutes to 10 hours.
摘要翻译：有机聚硅氧烷组合物，例如通过与通过热处理由（a）100重量份的具有特定粘度的有机聚硅氧烷（b）组成的混合物制备的比例耐热改进剂混合，本发明的硅氧烷液体赋予高耐热性，）铈的羧酸盐，例如2-乙基己酸乙酯，其量为0.05至5重量份的铈，和（c）钛或锆的烷氧基化合物如钛酸四丁酯，其量为0.1至5重量份钛或锆元素，基于组分（b）中的铈含量，例如在150℃至310℃的温度下进行30分钟至10小时。

138. 发明授权

US4431601A Process for the production of chitin fibers 失效
标题翻译：生产几丁质纤维的方法
公开(公告)号：US4431601A
公开(公告)日：1984-02-14
申请号：US316384
申请日：1981-10-29
申请人： Koji Kifune , Katsuhiro Inoue , Shigeru Mori
发明人： Koji Kifune , Katsuhiro Inoue , Shigeru Mori
IPC分类号： A61L17/08 , D01F9/00
CPC分类号： A61L17/08 , D01F9/00
摘要： A fiber comprised of chitin having a single yarn denier of 0.5 to 20 and a dry tensile strength of 2 g/d or more, and a process for the production thereof are described. The use of such chitin fibers permits the production of surgical sutures having high tensile strength and flexibility, and good absorption properties.
摘要翻译：描述了由单丝旦数为0.5〜20，干拉伸强度为2g / d以上的几丁质构成的纤维及其制造方法。使用这种几丁质纤维允许生产具有高拉伸强度和柔韧性以及良好吸收性能的外科缝合线。

139. 发明授权

US07298596B2 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US07298596B2
公开(公告)日：2007-11-20
申请号：US11477402
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

140. 发明申请

US20070228457A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070228457A1
公开(公告)日：2007-10-04
申请号：US11727971
申请日：2007-03-29
申请人： Shigeru Mori
发明人： Shigeru Mori
IPC分类号： H01L29/792
CPC分类号： H01L23/28 , H01L21/02365 , H01L29/02 , H01L29/66757 , H01L29/78 , H01L29/78603 , H01L29/78606 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.
摘要翻译：提供一种半导体器件，其中半导体层形成在绝缘基板上，其中插入在半导体层和绝缘基板之间的前端绝缘层，其能够防止绝缘基板中包含的杂质对半导体层的作用并提高半导体器件的可靠性。在TFT（薄膜晶体管）中，使硼被包含在距离绝缘基板的表面约100nm以下的区域中，使得硼浓度以平均速率降低约1/1000倍/ 1 从绝缘基板的表面朝向半导体层。

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