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131. 发明授权

US06847069B2 Thin-film semiconductor device, manufacturing method of the same and image display apparatus 失效
标题翻译：薄膜半导体器件及其制造方法以及图像显示装置
公开(公告)号：US06847069B2
公开(公告)日：2005-01-25
申请号：US10372809
申请日：2003-02-26
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01I27/148 , H01L29/768
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种薄膜半导体器件，其中通过利用熔融半导体的表面张力的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛状区域其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

132. 发明授权

US06690064B2 Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06690064B2
公开(公告)日：2004-02-10
申请号：US10274995
申请日：2002-10-22
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L21331
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： A thin film transistor is provided containing polycrystalline Si—Ge alloy. A high performance TFT may be provided having crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. An image display device may be realized having a high performance and a large area at a low cost.
摘要翻译：提供含有多晶Si-Ge合金的薄膜晶体管。可以提供具有通过在Si中引入Ge来抑制晶界中的电流散射和表面粗糙度的晶体结构的高性能TFT。可以以低成本实现具有高性能和大面积的图像显示装置。

133. 发明授权

US06521909B2 Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06521909B2
公开(公告)日：2003-02-18
申请号：US09790545
申请日：2001-02-23
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L2906
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： A high performance thin film transistor is provided containing polycrystalline Si-Ge alloy. The TFT has a crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. This permits realizing an image display device having high performance and a large area at low cost.
摘要翻译：提供含有多晶Si-Ge合金的高性能薄膜晶体管。 TFT具有通过在Si中引入Ge来限制晶界的电流散射和表面粗糙度的晶体结构。这允许以低成本实现具有高性能和大面积的图像显示装置。

134. 发明授权

US5326745A Superconducting device with C-axis orientation perpendicular to current flow 失效
标题翻译：具有C轴取向垂直于电流的超导装置
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L23/48
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

135. 发明授权

US08802511B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08802511B2
公开(公告)日：2014-08-12
申请号：US14106287
申请日：2013-12-13
申请人： Takeshi Sato
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

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