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121. 发明公开

EP2987034A1 COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHIEVE SUB-THRESHOLD PATTERN FEATURES 有权
标题翻译：切割和光刻掩膜光刻常规的组合，以实现低结构特征
公开(公告)号：EP2987034A1
公开(公告)日：2016-02-24
申请号：EP14727110.0
申请日：2014-04-11
申请人： Qualcomm Incorporated
发明人： ZHU, John J. , WANG, Zhongze , DA, Yang
IPC分类号： G03F7/20 , H01L27/00
CPC分类号： H01L21/76894 , G03F7/7045 , G03F7/70466 , H01L21/28123 , H01L21/283 , H01L21/31 , H01L21/469 , H01L21/76892 , H01L21/76895 , H01L23/50 , H01L24/27 , H01L24/31 , H01L2924/0002 , H01L2924/12042 , H01L2924/00
摘要： Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.

122. 发明公开

EP2807679A4 SELECTIVE REMOVAL OF A COATING FROM A METAL LAYER, AND SOLAR CELL APPLICATIONS THEREOF 审中-公开
标题翻译：金属层的涂层和太阳能电池应用程序的选择性脱除
公开(公告)号：EP2807679A4
公开(公告)日：2015-08-05
申请号：EP13741480
申请日：2013-01-23
申请人： TETRASUN INC
发明人： TURNER ADRIAN BRUCE , ONG QING YUAN , SCHULTZ-WITTMANN OLIVER
IPC分类号： H01L31/0224
CPC分类号： H01L31/1868 , B23K26/40 , H01L21/76894 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/022441 , H01L31/1884 , H01L31/1888 , Y02E10/50 , Y02E10/52
摘要： A method and resulting structure of patterning a metal film pattern over a substrate, including forming a metal film pattern over the substrate; depositing a coating over the substrate surface and the metal film pattern; and removing the coating over the metal film pattern by laser irradiation. The substrate and coating do not significantly interact with the laser irradiation, and the laser irradiation interacts with the metal film pattern and the coating, resulting in the removal of the coating over the metal film pattern. The invention offers a technique for the formation of a metal pattern surrounded by a dielectric coating for solar cells, where the dielectric coating may function as an antireflection coating on the front surface, internal reflector on the rear surface, and may further may function as a dielectric barrier for subsequent electroplating of metal patterns on either surface.

123. 发明授权

EP1610377B1 System for modifying small structures 有权
标题翻译：系统修改小结构
公开(公告)号：EP1610377B1
公开(公告)日：2012-01-11
申请号：EP05075796.2
申请日：2005-04-07
申请人： FEI COMPANY
发明人： Gu, George Y. , Bassom, Neil J. , Gannon, Thomas J. , Liu, Kun
IPC分类号： H01L21/768 , H01L21/288
CPC分类号： H01L21/76894 , C25D3/665 , C25D5/02 , C25F3/12 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/76892

124. 发明公开

EP2400539A2 Substrate dividing method 有权
标题翻译： VERFAHREN ZUM ABENENENEN EINES SUBSTRATES
公开(公告)号：EP2400539A2
公开(公告)日：2011-12-28
申请号：EP11182633.5
申请日：2003-03-06
申请人： Hamamatsu Photonics K.K.
发明人： Fujii, Yoshimaro , Fukuyo, Fumitsugu , Fukumitsu, Kenshi , Uchiyama, Naoki
IPC分类号： H01L21/78 , B23K26/40 , B23K26/06 , B28D5/00
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译：一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

125. 发明授权

EP1494271B1 METHOD FOR DICING SUBSTRATE 有权
标题翻译：方法：用于将衬底
公开(公告)号：EP1494271B1
公开(公告)日：2011-11-16
申请号：EP03744003.9
申请日：2003-03-06
申请人： HAMAMATSU PHOTONICS K.K.
发明人： FUJII, Yoshimaro, c/o Hamamatsu Photonics K.K. , FUKUYO, Fumitsugu, c/o Hamamatsu Photonics K.K. , FUKUMITSU, Kenshi, c/o Hamamatsu Photonics K.K. , UCHIYAMA, Naoki, c/o Hamamatsu Photonics K.K.
IPC分类号： H01L21/78 , B23K26/40
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

126. 发明公开

EP2315289A3 Laser patterning of devices 审中-公开
标题翻译：借助激光场次安排
公开(公告)号：EP2315289A3
公开(公告)日：2011-09-28
申请号：EP10182731.9
申请日：2002-05-22
申请人： Plastic Logic Limited
发明人： Sirringhaus, Henning , Cain, Paul Alan
IPC分类号： H01L51/40 , G03F9/00 , H01L21/768 , G03F7/00
CPC分类号： H01L51/0016 , B82Y10/00 , B82Y40/00 , G03F7/00 , G03F7/0002 , H01L21/76894 , H01L51/0004 , H01L51/0017 , H01L51/0023 , H01L51/0037 , H01L51/0039 , H01L51/0516 , H01L51/0541
摘要： A technique for forming on a substrate an electrical device including at least one patterned layer, the technique comprising selectively exposing material on the substrate to a beam of light so as to modify the physical properties of a first layer and bring about patterning of the first layer.

127. 发明公开

EP1544906A4 METHOD AND DEVICE FOR LASER BEAM PROCESSING OF SILICON SUBSTRATE, AND METHOD AND DEVICE FOR LASER BEAM CUTTING OF SILICON WIRING 审中-公开
标题翻译：方法及装置：用于激光切断硅布线的硅衬底的方法和装置激光加工
公开(公告)号：EP1544906A4
公开(公告)日：2008-08-13
申请号：EP03771391
申请日：2003-07-28
申请人： SUMITOMO PREC PRODUCTS COMPANY
发明人： ARAKI RYUTA
IPC分类号： B23K26/40 , B23K26/42 , H01L21/768 , H01L23/525 , H01L27/08 , H01L21/3205 , C30B29/06 , C30B33/08 , H01L21/82 , H01L21/822 , H01L27/04
CPC分类号： H01L27/0805 , B23K26/40 , B23K26/60 , B23K2201/40 , B23K2203/50 , H01L21/76894 , H01L23/5258 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A method and a device for the laser beam processing of a silicon substrate capable of preventing molten silicon from spattering, providing an excellent processing accuracy, and efficiently drilling and cutting the silicon substrate, and particularly useful when a short-circuited part is provided in a silicon wiring, the method characterized by comprising the steps of adjusting the surface roughness (Ra) of the silicon substrate to 0.05 to 1 μm and radiating laser beam on the silicon substrate; the device characterized by comprising a means for adjusting the surface roughness (Ra) of the silicon substrate to 0.05 to 1 μm and a means for radiating the laser beam.

128. 发明授权

EP1092237B1 METHOD OF SEVERING ELECTRICALLY CONDUCTIVE LINKS WITH ULTRAVIOLET LASER OUTPUT 有权
标题翻译：电机铅分离方法COMPOUNDS紫外激光辐射输出
公开(公告)号：EP1092237B1
公开(公告)日：2007-07-25
申请号：EP99927214.9
申请日：1999-06-04
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC.
发明人： SUN, Yunlong , SWENSON, Edward
IPC分类号： H01L21/768
CPC分类号： H01L21/76894
摘要： Ultraviolet (UV) laser output exploits the absorption characteristics of the materials from which an electrically conductive link (42), an underlying semiconductor substrate (50), and passivation layers (48 and 54) are made to effectively remove the link (42) without damaging the substrate (50). The UV laser output forms smaller than conventional IR laser link-blowing spot diameters (58) because of its shorter wavelength, thus permitting the implementation of greater circuit density. A passivation layer positioned between the link and the substrate can be formulated to be sufficiently absorptive to UV laser energy and sufficiently thick to attenuate the laser energy to prevent it from damaging the substrate (50) in the laser beam spot area (43) in both the off-link and link-overlapped portions. The UV laser output can be employed to controllably ablate a depthwise portion of the passivation layer (54) underlying the link (42) to facilitate complete removal of the link (42). In addition, direct ablation of the passivation layer (48) with the UV laser output facilitates predictable and consistent link severing profiles. The absorption characteristics of the passivation material also reduce the risk of damage to neighboring links or other active structures.

129. 发明公开

EP1287594A2 LASER SYSTEM FOR PROCESSING TARGET MATERIAL 审中-公开
标题翻译：激光系统进行处理靶材
公开(公告)号：EP1287594A2
公开(公告)日：2003-03-05
申请号：EP01946015.3
申请日：2001-05-31
申请人： General Scanning, Inc.
发明人： SMART, Donald, V. , SVETKOFF, Donald, J.
IPC分类号： H01S3/23 , B23K26/00 , H01L21/70
CPC分类号： H01S3/2308 , B23K26/0624 , B23K26/0736 , B23K26/40 , B23K2203/50 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/06754 , H01S3/2375 , H01S3/302 , H01S2301/08 , H01L2924/00
摘要： An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser having a first wavelength for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a fiber amplifier subsystem for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses. The amplified pulses have little distortion and have substantially the same relative temporal power distribution as the original pulse train from the laser. Each of the amplified pulses has a substantially square temporal power density distribution, a sharp rise time, a pulse duration and a fall time. The subsystem also includes a wavelength shifter in the form of an optical fiber for controllably shifting the first wavelength to a second, larger wavelength to obtain an amplified, wavelength-shifted, pulse train.

130. 发明公开

EP1051745A1 A METHOD FOR GENERATING ELECTRICAL CONDUCTING OR SEMICONDUCTING STRUCTURES IN TWO OR THREE DIMENSIONS, A METHOD FOR ERASING THE SAME STRUCTURES AND AN ELECTRIC FIELD GENERATOR/MODULATOR FOR USE WITH THE METHOD FOR GENERATING 有权
标题翻译： METHOD FOR PRODUCING二维或三维ELECTRIC导电或半导电的结构，删除一个及其方法及空间电场FOR USE IN制造方法的生成器/调制器
公开(公告)号：EP1051745A1
公开(公告)日：2000-11-15
申请号：EP99907966.8
申请日：1999-01-28
申请人： Thin Film Electronics ASA
发明人： NORDAL, Per-Erik , LEISTAD, Geirr, I. , GUDESEN, Hans, Gude
IPC分类号： H01L21/64
CPC分类号： H01L51/0001 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L51/0024 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： In a method for generating electrical conducting or semiconducting structures in three dimensions in a matrix which comprises two or more materials in spatially separated material structures, an electric field is applied to the separate material structure or the field-modulated spatially according to a protocol which represents a predetermined pattern of electrical conducting or semiconducting structures which are generated in the material structure in response to the field. The matrix composed by the material structures will hence comprise structures of this kind in three dimensions. In a method for global erasing an electric field is applied to the matrix until the materials in the matrix in response to the field in their entirety arrive in a non-conducting state. In an electric field generator/modulator (EFGM) which can be used for patterning and generating electrical conducting or semiconducting structures, two electrode means (E1;E2) comprise parallel strip electrodes (21;22) provided mutually spaced apart in parallel planes such that the electrodes (21, 22) form a matrix-like arrangement. The electrode means (E1;E2) are over cross-connection devices (24, 25) connected with a power supply (23). EFGM (20) is adapted for receiving a thin-film material between the electrode devices (E1, E2) in order to generate said structures.

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