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121. 发明授权

US5847903A Magnetic circuit structure for a rotary actuator in a disk drive 失效
标题翻译：用于磁盘驱动器中的旋转致动器的磁路结构
公开(公告)号：US5847903A
公开(公告)日：1998-12-08
申请号：US751414
申请日：1996-11-18
申请人： Yoshinori Ogawa , Kazunori Tochiyama , Yoshihiro Sato , Hironori Suzuki
发明人： Yoshinori Ogawa , Kazunori Tochiyama , Yoshihiro Sato , Hironori Suzuki
IPC分类号： G11B21/02 , G11B5/55 , H02K1/17 , H02K41/035 , H02K41/00 , G11B5/52 , G11B21/08
CPC分类号： H02K41/0358 , G11B5/5569 , H02K1/17
摘要： A magnetic circuit structure in a disk unit which can be manufactured at low costs. The magnetic circuit includes a main yoke manufactured by stacking a plurality of rolled steel plates and connecting them together by caulking. The magnetic circuit further includes an inner magnet, an outer magnet, and a side yoke all of which are mounted on the main yoke. Both ends of the inner magnet abut against a pair of shoulders formed on the main yoke, and both ends of the outer magnet abut against a pair of shoulders formed on the main yoke. Vertical movement of the inner magnet is prevented by a pair of presser plates and fixed to the main yoke, and vertical movement of the outer magnet is also prevented by a pair of presser plates and fixed to the main yoke.
摘要翻译：可以以低成本制造的盘单元中的磁路结构。磁路包括通过堆叠多个轧制钢板并通过铆接将它们连接在一起而制造的主轭。磁路还包括内磁体，外磁体和侧轭，所有这些都安装在主磁轭上。内磁体的两端抵靠形成在主磁轭上的一对肩部，外磁体的两端抵靠形成在主磁轭上的一对肩部。通过一对压板防止内磁体的垂直运动并固定在主磁轭上，并且通过一对压板防止外磁体的垂直运动并固定到主磁轭。

122. 发明授权

US5354905A N-alkoxymethyl benzamide derivative and manufacturing method therefor, and manufacturing method for benzamide derivative using this N-alkoxymethyl benzamide derivative 失效
标题翻译： N-烷氧基甲基苯甲酰胺衍生物及其制造方法，以及使用该N-烷氧基甲基苯甲酰胺衍生物的苯甲酰胺衍生物的制造方法
公开(公告)号：US5354905A
公开(公告)日：1994-10-11
申请号：US138423
申请日：1993-10-20
申请人： Yoshihiro Sato , Akihiro Koiso , Tohru Asada , Yasuhisa Miura , Yasuo Kikuchi , Yasuaki Hariya
发明人： Yoshihiro Sato , Akihiro Koiso , Tohru Asada , Yasuhisa Miura , Yasuo Kikuchi , Yasuaki Hariya
IPC分类号： C07C231/12 , C07C233/69 , C09C233/05 , C09C233/65
CPC分类号： C07C233/69 , C07C231/12
摘要： An N-alkoxymethyl benzamide derivative represented by Formula (I); ##STR1## (In the formula, reference X indicates a halogen atom, references Y.sub.1 and Y.sub.2 indicate hydrogen atoms or halogen atoms, and may be identical or different, and reference R indicates a lower alkyl group.) and a manufacturing method for this N-alkoxymethyl benzamide derivative in which a substituted benzamide and an .alpha.-haloacetal are reacted. Furthermore, a manufacturing method for benzamide derivatives in which the N-alkoxymethyl benzamide derivative represented by Formula (I) above and benzene or a derivative thereof are reacted, and a benzamide derivative is produced. The N-alkoxymethyl benzamide derivative of the present invention is a novel compound, and possesses utility as an intermediate in the manufacturing of oxazoline derivatives which possess insecticidal and anti-mite activity, and as a starting material for the synthesis of various organic compounds and the like.
摘要翻译：由式（I）表示的N-烷氧基甲基苯甲酰胺衍生物; （I）（式中，X表示卤素原子，Y1，Y2表示氢原子或卤素原子，可以相同也可以不同，参考文献R表示低级烷基）和制造方法对于其中取代的苯甲酰胺和α-卤代缩醛反应的N-烷氧基甲基苯甲酰胺衍生物。此外，制备其中由上式（I）表示的N-烷氧基甲基苯甲酰胺衍生物和苯或其衍生物反应的苯甲酰胺衍生物的制备方法和苯甲酰胺衍生物。本发明的N-烷氧基甲基苯甲酰胺衍生物是新化合物，具有杀虫，抗螨活性的恶唑啉衍生物的制造中的中间体，作为各种有机化合物的合成原料，喜欢。

123. 发明授权

US4520927A Heat-sealable package blank for a video tape cassette 失效
标题翻译：用于录像带的可热封封装空白
公开(公告)号：US4520927A
公开(公告)日：1985-06-04
申请号：US455944
申请日：1982-12-15
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： B65D5/18 , G11B23/023 , B65D85/672
CPC分类号： G11B23/0233 , B65D5/18
摘要： A package blank is made from a single sheet having at least surface layers of heat-sealable material. The blank sheet comprises first and second rectangular panels foldably formed on opposite sides of a backstrip. The first and second panels have first and second pairs of foldable side flaps, respectively, extending from their opposite sides, and the backstrip has a pair of foldable back flaps extending from its opposite ends. The first side flap pair and the back flap pair have sloping edges located adjacent each other for forming at least partly overlapping seams when the blank is folded up into a generally boxlike, open-front package. The overlapping seams serve to prevent the intrusion into the package of heated air used for fusing the second side flap pair onto the first side flap pair and the back flap pair. At least either of the first side flap pair and the back flap pair is at least partly reduced in thickness to minimize the thickness of the overlapping seams and hence to avoid the surface irregularities of the overlying second side flap pair.
摘要翻译：包装坯料由具有至少具有可热封材料的表面层的单个片材制成。空白片材包括可折叠地形成在背板的相对侧上的第一和第二矩形面板。第一和第二面板分别具有从其相对侧延伸的第一和第二对可折叠侧翼，并且背条具有从其相对端延伸的一对可折叠后折片。第一侧翼片对和后翼片对具有彼此相邻的倾斜边缘，用于当坯件折叠成大体上盒状的开放式封装时形成至少部分重叠的接缝。重叠接缝用于防止侵入用于将第二侧翼片对熔合到第一侧翼片对和后翼片对上的加热空气的包装。第一侧翼片对和后翼片对中的至少一个至少部分地减小厚度以使重叠接缝的厚度最小化，并且因此避免上覆的第二侧翼片对的表面不规则性。

124. 发明授权

US09048302B2 Field effect transistor having semiconductor operating layer formed with an inclined side wall 有权
标题翻译：具有形成有倾斜侧壁的半导体操作层的场效应晶体管
公开(公告)号：US09048302B2
公开(公告)日：2015-06-02
申请号：US12318779
申请日：2009-01-08
申请人： Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Takehiko Nomura , Seikoh Yoshida , Masayuki Iwami , Jiang Li
发明人： Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Takehiko Nomura , Seikoh Yoshida , Masayuki Iwami , Jiang Li
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/778 , H01L29/66 , H01L29/423 , H01L29/78 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/267
CPC分类号： H01L29/7813 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/0843 , H01L29/2003 , H01L29/205 , H01L29/267 , H01L29/4232 , H01L29/4236 , H01L29/66462 , H01L29/66522 , H01L29/778 , H01L29/7783 , H01L29/7789
摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.
摘要翻译：场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。场效应晶体管包括衬底; 具有凹部并形成在所述基板上的半导体操作层; 形成在包括所述凹部的所述半导体操作层上的绝缘层; 在所述凹部处形成在所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。凹部包括相对于半导体操作层倾斜的侧壁。

125. 发明授权

US08841918B2 Switching apparatus and test apparatus 有权
标题翻译：开关设备和测试仪器
公开(公告)号：US08841918B2
公开(公告)日：2014-09-23
申请号：US13277234
申请日：2011-10-20
申请人： Hisao Hori , Yoshikazu Abe , Yoshihiro Sato
发明人： Hisao Hori , Yoshikazu Abe , Yoshihiro Sato
IPC分类号： G01R31/02 , G01R31/26 , G01R1/067 , H01H57/00 , G01R1/073 , H01L41/09
CPC分类号： G01R1/06705 , G01R1/07392 , H01H57/00 , H01H2057/006 , H01L41/094
摘要： Provided is a switching apparatus comprising a contact point section that includes a first contact point; an actuator that includes a second contact point and moves the second contact point to contact or move away from the first contact point; and a control section that controls a first drive voltage. The actuator includes a first piezoelectric film that expands and contracts according to the first drive voltage and a support layer disposed on the first piezoelectric film. The control section causes the first piezoelectric film to contract by causing a change from a voltage that applies an electric field that is less than a first coercive electric field to a voltage that applies an electric field that exceeds the first coercive electric field, and causes the first piezoelectric film to expand by outputting a voltage that applies an electric field that is less than a second coercive electric field.
摘要翻译：提供一种开关装置，包括：接触点部分，其包括第一接触点; 致动器，其包括第二接触点并且使所述第二接触点移动以接触或远离所述第一接触点移动; 以及控制部，其控制第一驱动电压。致动器包括根据第一驱动电压而膨胀和收缩的第一压电膜和设置在第一压电膜上的支撑层。控制部通过将施加小于第一矫顽电场的电场的电压变为施加超过第一矫顽电场的电场的电压使第一压电膜收缩，第一压电膜通过输出施加小于第二矫顽电场的电场的电压而膨胀。

126. 发明授权

US08471341B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08471341B2
公开(公告)日：2013-06-25
申请号：US12712890
申请日：2010-02-25
申请人： Yoshihiro Sato , Atsuhiro Kajiya
发明人： Yoshihiro Sato , Atsuhiro Kajiya
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L21/823807 , H01L29/513 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/7843
摘要： A semiconductor device includes a first MIS transistor formed on a first active region, and a second MIS transistor formed on a second active region. The first MIS transistor includes a first gate insulating film, and a first gate electrode including a first metal film and a first silicon film. The second MIS transistor includes a second gate insulating film, and a second gate electrode including the first metal film, a second metal film, and a second silicon film.
摘要翻译：半导体器件包括形成在第一有源区上的第一MIS晶体管和形成在第二有源区上的第二MIS晶体管。第一MIS晶体管包括第一栅极绝缘膜和包括第一金属膜和第一硅膜的第一栅电极。第二MIS晶体管包括第二栅极绝缘膜和包括第一金属膜，第二金属膜和第二硅膜的第二栅电极。

127. 发明授权

US08450782B2 Field effect transistor, method of manufacturing field effect transistor, and method of forming groove 有权
标题翻译：场效应晶体管，制造场效应晶体管的方法和形成沟槽的方法
公开(公告)号：US08450782B2
公开(公告)日：2013-05-28
申请号：US13075843
申请日：2011-03-30
申请人： Yoshihiro Sato , Takehiko Nomura , Nariaki Ikeda , Takuya Kokawa , Masayuki Iwami , Sadahiro Kato
发明人： Yoshihiro Sato , Takehiko Nomura , Nariaki Ikeda , Takuya Kokawa , Masayuki Iwami , Sadahiro Kato
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/4232 , H01L29/518 , H01L29/66462 , H01L29/7787
摘要： A field effect transistor includes a high resistance layer on a substrate, a semiconductor operation layer that is formed on the high resistance layer and includes a channel layer that has the carbon concentration of not more than 1×1018 cm−3 and has the layer thickness of more than 10 nm and not more than 100 nm, a recess that is formed up to the inside of the channel layer in the semiconductor operation layer, source and drain electrodes that are formed on the semiconductor operation layer with the recess intervening therebetween, a gate insulating film that is formed on the semiconductor operation layer so as to cover the recess, and a gate electrode that is formed on the gate insulating film in the recess.
摘要翻译：场效应晶体管包括在基板上的高电阻层，形成在高电阻层上并具有碳浓度不大于1×10 18 cm -3且具有层厚度的沟道层的半导体操作层大于10nm且不大于100nm的凹槽，形成在半导体操作层中的沟道层内部的凹部，形成在半导体操作层上的沟槽间的沟槽间的沟槽间的沟槽，栅极绝缘膜，其形成在半导体操作层上以覆盖凹部;以及栅电极，其形成在凹部中的栅极绝缘膜上。

128. 发明授权

US08441105B2 Semiconductor device, wafer structure and method for fabricating semiconductor device 有权
标题翻译：半导体器件，晶片结构以及半导体器件的制造方法
公开(公告)号：US08441105B2
公开(公告)日：2013-05-14
申请号：US12437088
申请日：2009-05-07
申请人： Yoshihiro Sato , Takehiko Nomura
发明人： Yoshihiro Sato , Takehiko Nomura
IPC分类号： H01L23/544 , H01L21/00
CPC分类号： H01L23/3121 , B23K26/40 , B23K2103/172 , H01L21/6836 , H01L29/0657 , H01L29/2003 , H01L29/66143 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L29/872 , H01L2221/68327 , H01L2924/0002 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device includes an element forming region including at least one semiconductor element formed on at least one compound semiconductor layer formed on a substrate and a trench formed between an outer edge of the semiconductor device and the element forming region. The trench spatially separates the compound semiconductor layer, and the trench is formed at least to reach the substrate.
摘要翻译：半导体器件包括元件形成区域，该元件形成区域包括形成在形成在基板上的至少一个化合物半导体层上的至少一个半导体元件和形成在半导体器件的外边缘和元件形成区域之间的沟槽。沟槽在空间上分离化合物半导体层，并且至少形成沟槽以到达衬底。

129. 发明授权

US08198686B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08198686B2
公开(公告)日：2012-06-12
申请号：US12629508
申请日：2009-12-02
申请人： Yoshihiro Sato , Hisashi Ogawa
发明人： Yoshihiro Sato , Hisashi Ogawa
IPC分类号： H01L21/70
CPC分类号： H01L21/823807 , H01L21/28088 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/4966 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7843 , H01L29/7848
摘要： A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate electrode includes a second metal film formed on a first gate insulating film, and an insulating film formed, extending over side surfaces of the first gate electrode and upper surfaces of regions located in the first active region laterally outside the first gate electrode. The second MIS transistor includes a second gate electrode including a first metal film formed on a second gate insulating film and a conductive film formed on the first metal film, and the insulating film formed, extending over side surfaces of the second gate electrode and upper surfaces of regions located in the second active region laterally outside the second gate electrode. The first and second metal films are made of different metal materials.
摘要翻译：半导体器件包括第一MIS晶体管和第二MIS晶体管。第一MIS晶体管包括：第一栅电极，包括形成在第一栅极绝缘膜上的第二金属膜和形成的绝缘膜，所述绝缘膜在第一栅电极的侧表面和位于第一有源区域的区域的上表面横向外侧延伸第一栅电极。第二MIS晶体管包括第二栅电极，其包括形成在第二栅极绝缘膜上的第一金属膜和形成在第一金属膜上的导电膜，并且形成在第二栅电极和上表面的侧表面上延伸的绝缘膜位于第二有源区中的位于第二栅电极的横向外侧的区域。第一和第二金属膜由不同的金属材料制成。

130. 发明授权

US08161503B2 Objective lens actuator and an optical pickup 失效
标题翻译：物镜致动器和光学拾取器
公开(公告)号：US08161503B2
公开(公告)日：2012-04-17
申请号：US12540439
申请日：2009-08-13
申请人： Keiko Saito , Katsuhiko Kimura , Takahiro Yamaguchi , Yoshihiro Sato
发明人： Keiko Saito , Katsuhiko Kimura , Takahiro Yamaguchi , Yoshihiro Sato
IPC分类号： G11B7/12
CPC分类号： G11B7/1374 , G11B7/121 , G11B2007/0006
摘要： An objective lens actuator comprises, two objective lenses, each for focusing lights upon an optical disc, an objective lens holder member for holding the objective lenses thereon, and lens protectors for preventing the objective lenses from being contacted on the optical disc, wherein the lens protectors include first and second lens protectors, which are provided on both end portions of the objective lens holder member in a tracking direction, and a third lens protector, which is provided in a middle of the two objective lenses, wherein the first and second lens protectors, which are provided on both end portions of the objective lens holder member in the tracking direction, are provided the objective lenses and end portion of the objective lens holder member in the tracking direction, and the third lens protector, which is provided between the objective lenses, has a height closer to that of the optical disc than the protectors, which are provided on both end portions of the objective lens holder member in the tracking direction.
摘要翻译：物镜致动器包括两个物镜，每个用于将光聚焦在光盘上，用于将物镜保持在其上的物镜保持器构件和用于防止物镜在光盘上接触的透镜保护器，其中透镜保护器包括在跟踪方向上设置在物镜保持器构件的两个端部上的第一和第二透镜保护器，以及设置在两个物镜的中间的第三透镜保护器，其中第一和第二透镜在跟踪方向上设置在物镜保持器构件的两端部上的保护器设置在跟踪方向上的物镜和物镜保持器构件的端部，并且第三透镜保护器设置在与设置在物体的两端部的保护体相比，物镜的高度比光盘高 ve透镜保持器构件沿跟踪方向。

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