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    • 123. 发明申请
    • ELECTRON BEAM APPARATUS AND AN ABERRATION CORRECTION OPTICAL APPARATUS
    • 电子束装置和抛光校正光学装置
    • US20080067377A1
    • 2008-03-20
    • US11760235
    • 2007-06-08
    • Masahiro HatakeyamaTakeshi MurakamiNobuharu NojiMamoru NakasujiHirosi SobukawaSatoshi MoriTsutomu Karimata
    • Masahiro HatakeyamaTakeshi MurakamiNobuharu NojiMamoru NakasujiHirosi SobukawaSatoshi MoriTsutomu Karimata
    • G21K7/00
    • H01J37/153H01J37/065H01J2237/061H01J2237/06375H01J2237/083H01J2237/1534H01J2237/24592H01J2237/28
    • An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a 1/4 plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
    • 一种用于提供诸如半导体晶片的样品的评估的电子束装置,其包括具有不大于0.1μm的最小线宽的微量图案,具有高生产量。 由电子枪产生的一次电子束照射在样品上,从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。 电子枪61具有阴极1和拉伸电极3,阴极的电子发射表面1a限定凹面。 拉制电极3具有由面对阴极的电子发射表面1a的第二球体的部分外表面和由电子通过凸面形成的孔73构成的凸面3a。 像差校正光学装置包括两个相同大小的多极维恩滤波器,其布置成使得它们的中心分别与像差校正光学中的物平面图像平面段的1/4平面位置和¾平面位置对准 装置和具有分别设置在像差校正光学装置中的物平面位置,中间图像形成平面位置和图像平面位置的双向焦点的光学元件。
    • 128. 发明授权
    • Electron beam system
    • 电子束系统
    • US07157703B2
    • 2007-01-02
    • US10651105
    • 2003-08-29
    • Mamoru NakasujiTohru SatakeNobuharu NojiShoji YoshikawaTakeshi Murakami
    • Mamoru NakasujiTohru SatakeNobuharu NojiShoji YoshikawaTakeshi Murakami
    • H01J37/26
    • H01J37/28H01J2237/0492H01J2237/2441H01J2237/2446H01J2237/2806H01J2237/2817
    • Provided is an electron beam system, in which an electron beam emitted from an electron gun is irradiated to a stencil mask, and the electron beam that has passed through the stencil mask is magnified by an electron lens and then detected by a detector having a plurality of pixels so as to form an image of the sample. Further provided is an electron beam system, in which a primary electron beam emitted from an electron gun is directed to a sample surface of a sample prepared as a subject to be inspected, and an electron image formed by a secondary electron beam emanated from the sample is magnified and detected, wherein an NA aperture is disposed in a path common to both of the primary electron beam and the secondary electron beam. An electron lens is disposed in the vicinity of a sample surface, and in this arrangement, a crossover produced by the electron gun, the electron lens and the NA aperture may be in conjugate relationships relative to each other with respect to the primary electron beam.
    • 提供了一种电子束系统,其中从电子枪发射的电子束照射到模板掩模,并且已经通过模板掩模的电子束被电子透镜放大,然后由具有多个 以形成样品的图像。 进一步提供了一种电子束系统,其中从电子枪发射的一次电子束被引导到作为待检查对象制备的样品的样品表面,并且由从样品发出的二次电子束形成的电子图像 被放大和检测,其中NA孔径设置在一次电子束和二次电子束共同的路径中。 电子透镜设置在样品表面附近,并且在这种布置中,由电子枪,电子透镜和NA孔径产生的交叉可以相对于一次电子束相对于彼此的共轭关系。