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121. 发明授权

US06418999B1 Sample separating apparatus and method, and substrate manufacturing method 失效
公开(公告)号：US06418999B1
公开(公告)日：2002-07-16
申请号：US09211757
申请日：1998-12-15
申请人： Kazutaka Yanagita , Takao Yonehara , Kazuaki Omi , Kiyofumi Sakaguchi
发明人： Kazutaka Yanagita , Takao Yonehara , Kazuaki Omi , Kiyofumi Sakaguchi
IPC分类号： B32B3500
CPC分类号： H01L21/6835 , B26F3/004 , H01L21/67092 , H01L2221/68363 , H01L2924/30105 , Y10S156/941 , Y10T29/49821 , Y10T83/364 , Y10T156/11 , Y10T156/1126 , Y10T156/1137 , Y10T156/19 , Y10T156/1928 , Y10T156/1933 , Y10T156/1939
摘要： This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (102), so the jet is injected into the bonded substrate stack (101). The substrate holding portions (120, 150) hold the bonded substrate stack (101) such that the bonded substrate stack (101) can expand at its central portion due to the pressure of the injected water. This efficiently applies a force (separation force) that acts outward from the inside of the bonded substrate stack (101).

122. 发明授权

US06309945B1 Process for producing semiconductor substrate of SOI structure 失效
标题翻译：制造SOI结构半导体衬底的工艺
公开(公告)号：US06309945B1
公开(公告)日：2001-10-30
申请号：US08010297
申请日：1993-01-28
申请人： Nobuhiko Sato , Takao Yonehara
发明人： Nobuhiko Sato , Takao Yonehara
IPC分类号： H01L2176
CPC分类号： H01L21/02667 , H01L21/0203 , H01L21/02532 , H01L21/2022 , H01L21/76251 , H01L21/76256 , Y10S438/974 , Y10T428/31663
摘要： A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.
摘要翻译：制造半导体衬底的方法包括以下步骤：在包括单晶硅的第一衬底中形成多孔层; 在多孔层的孔的侧壁上形成保护膜; 在多孔层上形成无孔单晶硅层; 将无孔单晶硅层的表面粘合到具有绝缘层的第二衬底上; 并通过使用化学蚀刻溶液选择性地蚀刻多孔层。

123. 发明授权

US06246068B1 Semiconductor article with porous structure 有权
标题翻译：具有多孔结构的半导体制品
公开(公告)号：US06246068B1
公开(公告)日：2001-06-12
申请号：US09212432
申请日：1998-12-16
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L4700
CPC分类号： H01L21/02032 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76251 , H01L21/76254 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.
摘要翻译：提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。此时，在多孔Si层上外延生长无孔单晶Si层。此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。随后，进行选择性蚀刻以去除多孔Si层。

124. 发明授权

US06238586B1 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
公开(公告)号：US06238586B1
公开(公告)日：2001-05-29
申请号：US09298056
申请日：1999-04-22
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21302
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

125. 发明授权

US06211038B1 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06211038B1
公开(公告)日：2001-04-03
申请号：US09047325
申请日：1998-03-25
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.
摘要翻译：制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

126. 发明授权

US6150031A Semiconductor member and process for preparing semiconductor member 失效
标题翻译：半导体部件及半导体部件的制造方法
公开(公告)号：US6150031A
公开(公告)日：2000-11-21
申请号：US766888
申请日：1996-12-13
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/762 , B32B9/00
CPC分类号： H01L21/76243 , H01L21/76251 , H01L21/76264
摘要： A semiconductor member in which a non-porous monocrystalline semiconductor region is arranged on a porous monocrystalline semiconductor region. An insulating material is bonded onto the surface of the non-porous monocrystalline layer.
摘要翻译：其中非多孔单晶半导体区域布置在多孔单晶半导体区域上的半导体部件。绝缘材料结合到无孔单晶层的表面上。

127. 发明授权

US6136684A Semiconductor substrate and process for production thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US6136684A
公开(公告)日：2000-10-24
申请号：US683864
申请日：1996-07-19
申请人： Nobuhiko Sato , Takao Yonehara
发明人： Nobuhiko Sato , Takao Yonehara
IPC分类号： H01L21/205 , H01L21/762 , H01L21/4763
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02656 , H01L21/02661 , H01L21/76256
摘要： A process for producing a semiconductor substrate is provided which comprises providing a first member having a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer grown thereon, laminating the nonporous silicon layer of the first member onto a second member with interposition of an insulation layer provided on at least one lamination face of the first member and the second member, and removing the porous monocrystalline silicon layer by etching, wherein the nonporous monocrystalline silicon layer is grown at a low growth rate controlled such that the density of remaining pores on the crystal growth face is not more than 1000/cm.sup.2 at the time when the nonporous silicon layer has grown to a thickness corresponding to the diameter of the pores of the porous monocrystalline silicon layer.
摘要翻译：提供一种制造半导体衬底的方法，其包括提供具有多孔单晶硅层的第一构件和在其上生长的无孔单晶硅层，将第一构件的无孔硅层层压到第二构件上，插入绝缘层在第一构件和第二构件的至少一个层压面上，并且通过蚀刻去除多孔单晶硅层，其中无孔单晶硅层以低生长速率生长，以使得晶体生长上剩余孔的密度当无孔硅层已经生长到对应于多孔单晶硅层的孔的直径的厚度时，面积不大于1000 / cm2。

128. 发明授权

US6106613A Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate 失效
标题翻译：具有化合物半导体层的半导体衬底，其制造方法和在半导体衬底上制造的电子器件
公开(公告)号：US6106613A
公开(公告)日：2000-08-22
申请号：US041123
申请日：1998-03-12
申请人： Nobuhiko Sato , Takao Yonehara
发明人： Nobuhiko Sato , Takao Yonehara
IPC分类号： H01L21/20 , H01L21/205 , H01L21/3063 , H01L31/0693 , H01L31/18 , H01L33/34 , C30B19/00
CPC分类号： H01L33/346 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02521 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/0262 , H01L21/3063 , H01L31/0693 , H01L31/1804 , H01L31/1852 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with its pores having been sealed at the surface. This substrate can be produced by a process comprising the steps of heat-treating the silicon substrate 11 having a porous region, to seal pores at the surface of the porous region 13, and forming a single-crystal compound-semiconductor layer 14 by heteroepitaxial growth on the porous region having the pores sealed by the heat treatment.Single-crystal compound semiconductor films with less crystal defects can be formed on large-area silicon substrates in a high productivity, a high uniformity, a high controllability and a great economical advantage.
摘要翻译：在包括具有多孔区域的硅衬底和设置在多孔区域上的半导体层的半导体衬底中，半导体层包括单晶化合物，并且形成在多孔区域的表面上，其孔被密封在表面。该基板可以通过以下步骤制造，该方法包括以下步骤：对具有多孔区域的硅基板11进行热处理，以密封多孔区域13的表面处的孔，并通过异质外延生长形成单晶化合物半导体层14 在具有通过热处理密封的孔的多孔区域上。可以在大面积硅基板上以高生产率，高均匀性，高可控性和巨大的经济优势形成具有较少晶体缺陷的单晶化合物半导体膜。

129. 发明授权

US6054363A Method of manufacturing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US6054363A
公开(公告)日：2000-04-25
申请号：US968664
申请日：1997-11-12
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Tadashi Atoji
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Tadashi Atoji
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76259
摘要： A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.
摘要翻译：一种制造半导体产品的方法包括以下步骤：制备包括具有多孔硅层的硅衬底和布置在多孔硅层上的无孔半导体层的第一衬底的步骤，将第一衬底和第二衬底接合以产生多层结构，位于内部的无孔半导体层，通过加热多层结构并除去留在分离的第二基板上的多孔硅层，将多层结构的第一和第二基板沿着多孔硅层彼此分离。

130. 发明授权

US5966620A Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US5966620A
公开(公告)日：1999-10-12
申请号：US970356
申请日：1997-11-14
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L21/304 , H01L21/322 , H01L21/762 , H01L21/30 , H01L21/46
CPC分类号： H01L21/3226 , H01L21/304 , H01L21/76254 , H01L21/76259
摘要： A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.
摘要翻译：公开了一种制造半导体产品的新颖方法，其包括以下步骤：制备由硅衬底，形成在硅衬底上的无孔半导体层构成的第一衬底和形成在至少一个硅衬底和无孔半导体层; 将第一基板接合到第二基板以获得多孔层结构，其中无孔半导体层位于其内部; 在离子注入层分离多层结构; 以及去除残留在分离的第二衬底上的离子注入层。

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