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121. 发明授权

US07824210B2 Connector 有权
标题翻译：连接器
公开(公告)号：US07824210B2
公开(公告)日：2010-11-02
申请号：US12457150
申请日：2009-06-02
申请人： Taichi Oka , Koichi Kato , Hideaki Takehara , Sachio Suzuki
发明人： Taichi Oka , Koichi Kato , Hideaki Takehara , Sachio Suzuki
IPC分类号： H01R13/64
CPC分类号： H01R13/44 , H01R13/04 , H01R13/11
摘要： A connector includes a male connector part composed of a male terminal, a first main body to which the male terminal is attached, and a first terminal housing portion composed of a first housing opening portion in which an end of the male terminal is exhibited and a predetermined housing space in which the male terminal is housed, a female connector part composed of a female terminal into which the male terminal is inserted, the male terminal being electrically connected to the female terminal by fitting the male connector part with the female connector part, a holding means inside the female terminal for holding the male terminal in a vertical direction, and a touch protecting means inside the first terminal housing portion for protecting the male terminal housed in the predetermined housing space from being touched by a foreign body. The touch protecting means includes an insulating portion for covering a part of the male terminal including the end of the male terminal except a part contacting the holding means when the male terminal is inserted into the female terminal, and a pair of projecting portions projecting in the predetermined housing space of the first terminal housing portion and at a position opposite the part contacting the holding means when the male terminal is inserted into the female terminal such that the male terminal is sandwiched therebetween in the vertical direction.
摘要翻译：连接器包括由阳端子，阳端子连接到其上的第一主体和由阳端子的一端展现的第一壳体开口部分构成的第一端子壳体部分构成的阳连接器部分，公阳端子容纳在其中的预定容纳空间，由插入阳端子的阴端子构成的阴连接器部分，阳端子通过将阳连接器部件与阴连接器部件相配合而电连接到阴端子，用于将阳端子保持在垂直方向的阴端子内的保持装置，以及用于保护容纳在预定容纳空间中的阳端子不被异物触动的第一端子壳体部分内的触摸保护装置。触摸保护装置包括绝缘部分，用于当阳端子插入阴端子时，覆盖包括阳端子的端部的阳端子的除接触保持装置的部分的阳端子的一部分，以及一对突出部分当阳端子插入阴端子中时，第一端子壳体部分的预定容纳空间和与接触保持装置的部分相对的位置，使得阳端子沿垂直方向夹在其间。

122. 发明授权

US07772129B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07772129B2
公开(公告)日：2010-08-10
申请号：US11547691
申请日：2006-08-28
申请人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
发明人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译：可以抑制成膜时的缺陷的产生。一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上，气氛为40乇或更低。

123. 发明授权

US07768208B2 Discharge lamp apparatus 有权
标题翻译：放电灯装置
公开(公告)号：US07768208B2
公开(公告)日：2010-08-03
申请号：US12007742
申请日：2008-01-15
申请人： Koichi Kato , Yoshitaka Sato
发明人： Koichi Kato , Yoshitaka Sato
IPC分类号： B60Q1/14 , B60Q17/36
CPC分类号： H05B41/02 , B60Q1/0094 , F21S41/17 , F21S41/192 , F21S45/33 , F21V23/026
摘要： In a discharge lamp apparatus for lighting a discharge lamp, a ballast is disposed outside of a lamp housing of a discharge lamp and is electrically connected to the discharge lamp through a connector. A ballast housing of the ballast is connected to a bottom wall of the lamp housing. In the ballast housing, a ballast circuit board is arranged along a top wall of the ballast housing that is opposed to the lamp housing. Accordingly, it is less likely that the ballast circuit board will be wetted by condensation or water vapor entered the ballast housing. Additionally, a partition wall can be provided in the ballast housing between the connector and the ballast circuit board to block the condensation or water vapor from flowing toward the ballast circuit board.
摘要翻译：在用于点灯的放电灯装置中，将镇流器设置在放电灯的灯壳体的外侧，并通过连接器与放电灯电连接。镇流器的镇流器外壳连接到灯壳的底壁。在镇流器壳体中，镇流器电路板沿着与灯壳体相对的镇流器壳体的顶壁布置。因此，镇流器电路板不会被冷凝或水蒸汽进入镇流器壳体而被润湿。此外，可以在连接器和镇流器电路板之间的镇流器壳体中设置分隔壁，以阻止冷凝或水蒸汽流向镇流器电路板。

124. 发明授权

US07626338B2 Discharge lamp lighting apparatus 有权
标题翻译：放电灯照明装置
公开(公告)号：US07626338B2
公开(公告)日：2009-12-01
申请号：US11401294
申请日：2006-04-11
申请人： Koichi Kato , Yoshitaka Sato
发明人： Koichi Kato , Yoshitaka Sato
IPC分类号： H01J7/44
CPC分类号： F21V29/70 , F21S41/17 , F21S41/192 , F21S45/47 , F21S45/48 , F21V23/026 , F21V29/74 , F21V29/85 , G03F7/70016 , H01L2924/19105 , H01L2924/19107 , H05B41/02 , H05B41/042 , H05B41/2881 , H05K1/0206 , H05K1/0209 , H05K3/0061 , H05K3/305 , H05K2201/0209 , H05K2201/0959 , H05K2201/09781 , H05K2201/1003 , H05K2201/10446
摘要： A discharge lamp lighting apparatus includes a transformer unit, a casing for housing the transformer unit, and a circuit board including circuit components. In the casing, the circuit board is joined to the casing and the transformer unit is fixed to the circuit board through a heat conductive member having thermal conductivity of more than 0.1 W/(m·k). Heat produced by the transformer unit is transferred to the casing through the heat conductive member and released through the casing effectively. In the lighting apparatus, therefore, while the transformer unit is arranged relatively close to the circuit components, the heat can be prevented from affecting the circuit components.
摘要翻译：放电灯点灯装置包括变压器单元，用于容纳变压器单元的壳体和包括电路部件的电路板。在壳体中，电路板与壳体接合，并且变压器单元通过导热率大于0.1W /（m.k）的导热构件固定到电路板。由变压器单元产生的热量通过导热构件传递到壳体，并有效地通过壳体释放。因此，在照明装置中，当变压器单元布置成相对靠近电路部件时，可以防止热量影响电路部件。

125. 发明授权

US07501280B2 Immobilized cells and liposomes and method of immobilizing the same 失效
标题翻译：固定化细胞和脂质体及其固定方法
公开(公告)号：US07501280B2
公开(公告)日：2009-03-10
申请号：US10506210
申请日：2003-02-28
申请人： Teruyuki Nagamune , Jun Miyake , Masato Miyake , Koichi Kato
发明人： Teruyuki Nagamune , Jun Miyake , Masato Miyake , Koichi Kato
IPC分类号： C12N5/02 , C12N5/06
CPC分类号： C12N11/06 , C12N5/0068 , C12N11/02 , C12N11/08 , C12N2533/20 , C12N2533/30
摘要： In an inexpensive and convenient method for immobilizing a suspension cell, a phospholipid vesicle or the like regardless of the type of cell, on the surface of a solid phase, a cell is immobilized by causing the cell to contact a support having a hydrophobic chain and a hydrophilic chain.
摘要翻译：在固定悬浮细胞，磷脂囊泡等的便宜且方便的方法中，无论细胞类型如何，在固相表面上，通过使细胞与具有疏水性链的支持体和亲水链。

126. 发明申请

US20090013313A1 DEBUG DEVICE, DEBUG METHOD, AND PROGRAM 审中-公开
标题翻译：调试设备，调试方法和程序
公开(公告)号：US20090013313A1
公开(公告)日：2009-01-08
申请号：US11816321
申请日：2006-02-03
申请人： Koichi Kato , Kohsaku Shibata
发明人： Koichi Kato , Kohsaku Shibata
IPC分类号： G06F9/44
CPC分类号： G06F11/3664 , G06F11/3624
摘要： The debug device of the present invention is a debug device which stops execution of a program based on one of a conditional break for stopping the program regardless of the condition of a predicated instruction and an unconditional break for stopping the program only when the condition of the predicated instruction is true. The debug device includes: a receiving unit which receives a breakpoint according to an operation by a user; a determination unit which determines the received break point as the unconditional break or the conditional break; and a stop unit operable to stop the program based on the unconditional break or the conditional break determined by the determination unit.
摘要翻译：本发明的调试装置是一种调试装置，其基于用于停止程序的条件中断之一停止程序的执行，而不管预测指令的条件如何，只有当条件谓词指令是真实的。调试装置包括：接收单元，其根据用户的操作接收断点; 确定单元，其将接收到的断点确定为无条件中断或条件中断; 以及停止单元，其可操作以基于由所述确定单元确定的所述无条件中断或条件中断来停止所述程序。

127. 发明申请

US20090008726A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20090008726A1
公开(公告)日：2009-01-08
申请号：US12051947
申请日：2008-03-20
申请人： Takashi Yamauchi , Yoshifumi Nishi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
发明人： Takashi Yamauchi , Yoshifumi Nishi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
IPC分类号： H01L47/00 , H01L21/425
CPC分类号： H01L21/823814 , H01L21/823807 , H01L21/823821 , H01L21/823835 , H01L21/823842 , H01L29/785
摘要： A method of manufacturing a semiconductor device reducing interface resistance of n-type and p-type MISFETs are provided. According to the method, a gate dielectric film and a gate electrode of the n-type MISFET are formed on a first semiconductor region, a gate dielectric film and a gate electrode of the p-type MISFET are formed on a second semiconductor region, an n-type diffusion layer is formed by ion implantation of As into the first semiconductor region, a first silicide layer is formed by first heat treatment after a first metal containing Ni is deposited on the n-type diffusion layer, the first silicide layer is made thicker by second heat treatment after a second metal containing Ni is deposited on the first silicide layer and second semiconductor region, and third heat treatment is provided after formation of a second silicide layer and ion implantation of B or Mg into the second silicide layer.
摘要翻译：提供了制造半导体器件降低n型和p型MISFET的界面电阻的方法。根据该方法，在第一半导体区域上形成栅极电介质膜和n型MISFET的栅电极，在第二半导体区域上形成p型MISFET的栅极电介质膜和栅电极，通过将As离子注入第一半导体区域形成n型扩散层，在n型扩散层上沉积含有Ni的第一金属之后，通过第一热处理形成第一硅化物层，制作第一硅化物层在第一硅化物层和第二半导体区域上沉积含有Ni的第二金属沉积第二热处理之后，在形成第二硅化物层和在第二硅化物层中离子注入B或Mg之后提供第三热处理。

128. 发明申请

US20080181670A1 DEVELOPING DEVICE AND IMAGE FORMING APPARATUS USING SAME 有权
标题翻译：使用它的开发装置和图像形成装置
公开(公告)号：US20080181670A1
公开(公告)日：2008-07-31
申请号：US12020172
申请日：2008-01-25
申请人： Kiyonori TSUDA , Koichi Kato , Yuki Oshikawa , Yasufumi Takahashi , Eriko Maruyama , Koichi Sakata , Hitoshi Ishibashi , Kentaroh Tomita , Mugijirou Uno , Keiko Matsumoto , Kohichi Utsunomiya
发明人： Kiyonori TSUDA , Koichi Kato , Yuki Oshikawa , Yasufumi Takahashi , Eriko Maruyama , Koichi Sakata , Hitoshi Ishibashi , Kentaroh Tomita , Mugijirou Uno , Keiko Matsumoto , Kohichi Utsunomiya
IPC分类号： G03G15/08
CPC分类号： G03G15/095 , G03G2215/0827 , G03G2215/0838
摘要： A developing device which can stably supply a developer to a latent image carrier by preventing the scattered developer from being discharged and thereby preventing the developer from being discharged despite that the amount of developer within the developing device does not increase, and an image forming apparatus using the developing device. A block member serving as a scattered developer discharge prevention member is provided so as to block a path through which the developer scattered as a result of a conveyance operation of a supply screw serving as a developer conveying member moves toward a developer discharge port. Accordingly, the scattered developer is prevented from reaching the developer discharge port and being discharged therefrom.
摘要翻译：一种显影装置，其能够通过防止散射的显影剂的排出而稳定地将显影剂供应到潜像载体，从而防止显影剂排出，尽管显影装置内的显影剂的量不增加;以及图像形成装置，其使用显影装置。设置用作散开的显影剂排出部件的块部件，以阻挡作为用作显影剂传送部件的供给螺杆的输送操作而散发的显影剂朝向显影剂排出口移动的路径。因此，防止散开的显影剂到达显影剂排出口并从中排出。

129. 发明申请

US20080173927A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080173927A1
公开(公告)日：2008-07-24
申请号：US11896860
申请日：2007-09-06
申请人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
发明人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
IPC分类号： H01L29/788 , H01L21/336 , H01L29/792
CPC分类号： H01L21/28273
摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.
摘要翻译：半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。

130. 发明授权

US07358198B2 Semiconductor device and method for fabricating same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07358198B2
公开(公告)日：2008-04-15
申请号：US11250439
申请日：2005-10-17
申请人： Nobutoshi Aoki , Koichi Kato , Katsuyuki Sekine , Ichiro Mizushima
发明人： Nobutoshi Aoki , Koichi Kato , Katsuyuki Sekine , Ichiro Mizushima
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , H01L29/513 , H01L29/518
摘要： A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; and forming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.
摘要翻译：提供了一种方法：在硅衬底的表面上排列氮原子; 在氢气氛中进行热处理，使得存在于硅衬底表面上的氮原子和硅原子处于三配位键状态; 并且在硅衬底上形成具有氮原子的三配位键状态并保持硅原子的氧化硅膜。

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