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121. 发明授权

US07057209B2 Light emitting device, method of manufacturing the same and manufacturing apparatus therefor 失效
标题翻译：发光装置及其制造方法及其制造装置
公开(公告)号：US07057209B2
公开(公告)日：2006-06-06
申请号：US10963370
申请日：2004-10-12
申请人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
发明人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L27/3211 , H01L21/67207 , H01L27/3209 , H01L27/3218 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L51/5036 , H01L51/504 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.
摘要翻译：提供了具有高清晰度，高开口率和高可靠性的发光器件。本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠，而不依赖于形成有机化合物层的方法或成膜精度。

122. 发明授权

US07052943B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07052943B2
公开(公告)日：2006-05-30
申请号：US10097641
申请日：2002-03-15
申请人： Shunpei Yamazaki , Hideto Ohnuma , Koji Dairiki , Toru Mitsuki , Toru Takayama , Kengo Akimoto
发明人： Shunpei Yamazaki , Hideto Ohnuma , Koji Dairiki , Toru Mitsuki , Toru Takayama , Kengo Akimoto
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L27/1277
摘要： A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film (104) having a crystal structure is formed on a substrate. A barrier layer (105) and a second semiconductor film (106) containing a rare gas element are formed on the first semiconductor film (104). A metal element contained in the first semiconductor film (104) is moved to the second semiconductor film (106) through the barrier layer (105) by heat treatment for gettering.
摘要翻译：提供一种使用具有对半导体膜的结晶的催化作用以获得结晶半导体膜然后有效地除去残留在膜中的金属元素的金属元素的技术。在基板上形成具有晶体结构的第一半导体膜（104）。在第一半导体膜（104）上形成有阻挡层（105）和含有稀有气体元素的第二半导体膜（106）。包含在第一半导体膜（104）中的金属元素通过阻挡层（105）通过热处理移动到第二半导体膜（106）以进行吸气。

123. 发明申请

US20050224820A1 Light emitting apparatus and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050224820A1
公开(公告)日：2005-10-13
申请号：US11142275
申请日：2005-06-02
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L27/32 , H01L51/52 , H01L29/04 , H01L27/15 , H01L29/15 , H01L29/207 , H01L29/26 , H01L31/036 , H01L31/12 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L29/78621 , H01L29/78627 , H01L51/5234 , H01L51/5253 , H01L2251/5315 , H01L2251/566
摘要： The light emitting apparatus according to the invention having a thin film transistor and a light emitting element, comprises; a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and comprising light emitting material, and an anode layer formed in contact with the organic compound layer comprising the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：根据本发明的具有薄膜晶体管和发光元件的发光装置包括：在半导体层的下表面上的第一无机绝缘层，在栅电极的上表面上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层层，在第三无机绝缘层上延伸的布线层，与布线层的端部重叠并且具有35〜45度的倾斜角的第二有机绝缘层，形成在上表面和侧面的第四无机绝缘层的第二有机绝缘层，并且在布线层上具有开口，形成为与布线层接触并且具有与第四无机绝缘层重叠的侧端的阴极层和与阴极层接触形成的有机化合物层，以及第四无机绝缘层并且包括发光材料，以及形成为与该发光材料接触的阳极层包含所述发光材料的有机化合物层，其中所述第三无机绝缘层和所述第四无机绝缘层由氮化硅或氮化铝形成。

124. 发明申请

US20050197030A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20050197030A1
公开(公告)日：2005-09-08
申请号：US11028478
申请日：2005-01-04
申请人： Shunpei Yamazaki , Toru Takayama , Kengo Akimoto , Hajime Tokunaga
发明人： Shunpei Yamazaki , Toru Takayama , Kengo Akimoto , Hajime Tokunaga
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01L27/3244 , H01L51/5206 , H01L51/525 , H01L51/529
摘要： It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode including a conductive material added with a material which prevents crystallization; forming a layer containing an organic compound over the first electrode by heating the first electrode under a reduced pressure at temperatures of 350° C. or higher; and forming a second electrode over the layer containing an organic compound. It is preferable to perform the heat treatment at temperatures of 350° C. or higher, preferably, 375° C. or higher for 12 hours or longer. When the first electrode is formed by using indium tin oxide containing silicon oxide, a highly display device can be manufactured.
摘要翻译：本发明的目的是提供一种制造具有优选产率的高可靠性显示装置的方法。根据本发明的显示装置的制造方法包括以下步骤：形成包括添加有防止结晶的材料的导电材料的第一电极; 通过在350℃或更高的温度下在减压下加热第一电极，在第一电极上形成含有有机化合物的层; 以及在包含有机化合物的层上形成第二电极。优选在350℃以上的温度下进行热处理，优选在375℃以上进行12小时以上的热处理。当通过使用含有氧化硅的氧化铟锡形成第一电极时，可以制造高度显示装置。

125. 发明授权

US06913956B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06913956B2
公开(公告)日：2005-07-05
申请号：US10051064
申请日：2002-01-18
申请人： Takashi Hamada , Satoshi Murakami , Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Toru Takayama
发明人： Takashi Hamada , Satoshi Murakami , Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Toru Takayama
IPC分类号： G02F1/133 , G02F1/1362 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/3065 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L27/04 , H01L27/12 , H01L29/04 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/2022 , H01L21/3226 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L27/1288 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/56
摘要： The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.
摘要翻译：本发明的特征在于，在通过阻挡层使用催化元件而获得的结晶半导体膜上形成含有稀有气体元素的半导体膜，催化元素从结晶半导体膜移动到含有稀有气体元素通过热处理。此外，形成在第一n沟道TFT的半导体层中的第一杂质区域和第二杂质区域设置在栅电极的外侧。形成在第二n沟道TFT的半导体层中的第三杂质区域设置成与栅电极部分重叠。第三杂质区域设置在栅极外部。形成在p沟道TFT的半导体层中的第四杂质区域设置成与栅电极部分重叠。第五杂质区域设置在栅极外部。

126. 发明授权

US06838397B2 Silicon nitride film, and semiconductor device and method of manufacturing the same 失效
标题翻译：氮化硅膜和半导体器件及其制造方法
公开(公告)号：US06838397B2
公开(公告)日：2005-01-04
申请号：US10439295
申请日：2003-05-16
申请人： Toru Takayama , Shunpei Yamazaki , Kengo Akimoto
发明人： Toru Takayama , Shunpei Yamazaki , Kengo Akimoto
IPC分类号： H01L21/314 , H01L21/318 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/423 , H01L29/49 , H01L21/31 , H01L21/469 , H01L21/00
CPC分类号： H01L21/0217 , B32B17/04 , B32B17/06 , C23C14/0652 , C23C14/5846 , H01L21/02266 , H01L21/3145 , H01L21/3185 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/13 , H01L27/3244 , H01L27/3248 , H01L27/3297 , H01L29/42384 , H01L29/4908 , H01L29/518 , H01L29/66757 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulation film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.
摘要翻译：本发明的一个目的是将适合用作栅极绝缘膜和保护膜的固化和高品质的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术，以及通过使用它实现高效率和高可靠性的半导体器件。在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成通道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅氮化物膜含有浓度为1×10 21 / cm 3以下的氢，相对于含有氟化氢铵（NH 4 HF 2）为7.13％的混合溶液，蚀刻速率为10nm /分钟以下的特性， 15.4％的氟化铵（NH4F）。

127. 发明授权

US06614083B1 Wiring material and a semiconductor device having wiring using the material, and the manufacturing method 有权
标题翻译：接线材料和具有使用该材料的布线的半导体器件及其制造方法
公开(公告)号：US06614083B1
公开(公告)日：2003-09-02
申请号：US09527437
申请日：2000-03-16
申请人： Shunpei Yamazaki , Toru Takayama
发明人： Shunpei Yamazaki , Toru Takayama
IPC分类号： H01L2976
CPC分类号： H01L29/4908 , G02F2001/13629 , G02F2001/136295 , H01L27/124 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.
摘要翻译：本发明的目的是实现具有高TFT特性的半导体器件。在制造有源矩阵显示装置时，通过在掺杂杂质离子时防止氧离子渗透到电极中，使电极材料的电阻率保持较低。可以获得具有低电阻率的显示装置。

128. 发明授权

US06586766B2 Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it 有权
标题翻译：具有半导体单元的半导体电路的半导体装置及其制造方法
公开(公告)号：US06586766B2
公开(公告)日：2003-07-01
申请号：US10124373
申请日：2002-04-18
申请人： Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
发明人： Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
IPC分类号： H01L2904
CPC分类号： H01L27/1237 , G02F1/13454 , H01L27/1248 , H01L29/458 , H01L29/4908 , H01L29/78645
摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.
摘要翻译：本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。

129. 发明授权

US6110770A Semiconductor and process for fabricating the same 有权
标题翻译：半导体及其制造方法
公开(公告)号：US6110770A
公开(公告)日：2000-08-29
申请号：US229306
申请日：1999-01-13
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/00 , H01L21/324 , H01L21/336 , H01L27/12 , H01L29/02 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： H01L21/2022 , H01L27/1281 , H01L29/66757
摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150.degree. C.
摘要翻译：一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。

130. 发明授权

US5956579A Semiconductor, semiconductor device, and method for fabricating the same 失效
公开(公告)号：US5956579A
公开(公告)日：1999-09-21
申请号：US893361
申请日：1997-07-15
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
IPC分类号： H01L29/78 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L29/66757 , H01L29/78618
摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

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