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121. 发明申请

US20080210959A1 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US20080210959A1
公开(公告)日：2008-09-04
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

122. 发明授权

US07387678B2 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same 有权
标题翻译： GaN衬底及其制造方法，氮化物半导体器件及其制造方法
公开(公告)号：US07387678B2
公开(公告)日：2008-06-17
申请号：US10875512
申请日：2004-06-25
申请人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
发明人： Katsushi Akita , Eiryo Takasuka , Masahiro Nakayama , Masaki Ueno , Kouhei Miura , Takashi Kyono
IPC分类号： C30B29/38
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007
摘要： A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0
摘要翻译： GaN衬底包括在衬底上外延生长的GaN单晶衬底，Al x x Ga 1-x N中间层（0

123. 发明申请

US20080035910A1 Nitride Semiconductor Light-Emitting Device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20080035910A1
公开(公告)日：2008-02-14
申请号：US11874908
申请日：2007-10-19
申请人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
发明人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： In a nitride semiconductor light-emitting device (11), an emission region (17) has a quantum well structure (19), and lies between an n-type gallium nitride semiconductor region (13) and a p-type gallium nitride semiconductor region (15). The quantum well structure (19) includes a plurality of first well layers (21) composed of InxGa1-xN, one or a plurality of second well layers (23) composed of InyGa1-yN, and barrier layers (25). The first and second well layers (21) and (23) are arranged in alternation with the barrier layers (25). The second well layers (23) lie between the first well layers (21) and the p-type gallium nitride semiconductor region (15). The indium component y of the second well layers (23) is smaller than indium component x of the first well layers (21), and the thickness DW2 of the second well layers (23) is greater than the thickness DW1 of the first well layers (21).
摘要翻译：在氮化物半导体发光装置（11）中，发光区域（17）具有量子阱结构（19），位于n型氮化镓半导体区域（13）和p型氮化镓半导体区域（15）。量子阱结构（19）包括由多个第一阱层（21）组成的多个第一阱层（21），一个或多个第二阱层（ 23），以及阻挡层（25）构成。第一和第二阱层（21）和（23）被布置成与阻挡层（25）交替。第二阱层（23）位于第一阱层（21）和p型氮化镓半导体区域（15）之间。第二阱层（23）的铟成分y小于第一阱层（21）的铟成分x，第二阱层（23）的厚度D W2 W2大于第一阱层（21）的厚度D 。

124. 发明授权

US07202509B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07202509B2
公开(公告)日：2007-04-10
申请号：US10923046
申请日：2004-08-23
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

125. 发明授权

US07195937B2 Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer 有权
标题翻译：用于测量半导体外延晶片和半导体外延晶片的耐受电压的方法
公开(公告)号：US07195937B2
公开(公告)日：2007-03-27
申请号：US10484001
申请日：2003-01-23
申请人： Katsushi Akita , Masashi Yamashita , Makoto Kiyama
发明人： Katsushi Akita , Masashi Yamashita , Makoto Kiyama
IPC分类号： H01L21/66 , G01R31/26 , G01N27/02
CPC分类号： H01L22/14 , H01L22/34
摘要： A measurement-facilitating method of measuring the breakdown voltage of a semiconductor epitaxial wafer, and a semiconductor epitaxial wafer whose breakdown voltage is superior are realized. In a method of measuring the breakdown voltage of a semiconductor epitaxial wafer having to do with the present invention, the breakdown voltage between contacts 14 and 18 is measured only through the Schottky contacts, without need for ohmic contacts. Inasmuch as the manufacturing process of forming ohmic contacts is accordingly omitted, the semiconductor epitaxial wafer 10 may be readily used in a breakdown-voltage measurement test. The measurement of the wafer-10 breakdown voltage thus may be readily carried out. Likewise, because the inter-contact breakdown voltage V2 of a wafer 10 can be measured prior to manufacturing a working device from it, unsuitable wafers 10 can be excluded before they are cycled through the working-device fabrication process. Reduction in losses can accordingly be counted upon, in contrast to conventional measuring methods, by which inter-contact breakdown voltage V2 is measured following fabrication of the working devices.
摘要翻译：实现了测量半导体外延晶片的击穿电压的测量方法和击穿电压优良的半导体外延晶片。在测量与本发明有关的半导体外延晶片的击穿电压的方法中，触点14和18之间的击穿电压仅通过肖特基触点测量，而不需要欧姆接触。因此省略了形成欧姆接触的制造工艺，因此半导体外延晶片10可以容易地用于击穿电压测量测试。因此，可以容易地进行晶片-10击穿电压的测量。同样，由于可以在从其制造工作装置之前测量晶片10的接触间击穿电压V 2 2，所以不适合的晶片10可以在它们循环通过工作装置制造之前被排除处理。因此，与传统的测量方法相比，可以减少损耗，通过这些测量方法，在工作装置制造之后测量接触间击穿电压V 2 2。

126. 发明授权

US07190004B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07190004B2
公开(公告)日：2007-03-13
申请号：US11001414
申请日：2004-12-02
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
摘要翻译：发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

127. 发明申请

US20050151154A1 Semiconductor light generating device 有权
标题翻译：半导体发光装置
公开(公告)号：US20050151154A1
公开(公告)日：2005-07-14
申请号：US11032230
申请日：2005-01-11
申请人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
发明人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
IPC分类号： H01L33/32 , H01L29/24
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06
摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.
摘要翻译：半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGaN半导体层。第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是设置在光生成区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

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