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121. 发明申请

US20070292926A1 Processes for Producing Optically Active 1-Substituted 2-Methylpyrrolidine and Intermediate Therefor 失效
标题翻译：用于生产光学活性1-取代的2-甲基吡咯烷及其中间体的方法
公开(公告)号：US20070292926A1
公开(公告)日：2007-12-20
申请号：US10586337
申请日：2005-01-19
申请人： Akira Nishiyama , Naoaki Taoka , Narumi Kishimoto , Nobuo Nagashima
发明人： Akira Nishiyama , Naoaki Taoka , Narumi Kishimoto , Nobuo Nagashima
IPC分类号： C12P7/18 , C07C31/20 , C07D207/04
CPC分类号： C12P17/10 , C07C303/28 , C12P7/18 , C12P11/00 , C07C309/66
摘要： The present invention relates to a process for producing an optically active 1,4-pentanediol by asymmetrically reducing 5-hydroxy-2-pentanone, which is easily available at low cost. The present invention also relates to a process for producing an optically active 1-substituted 2-methylpyrrolidine including sulfonylating the optically active 1,4-pentanediol to convert it to an optically active sulfonate compound, and reacting the compound with an amine. According to the processes of the present invention, an optically active 1,4-pentanediol and an optically active 1-substituted 2-methylpyrrolidine, which are useful as an intermediate for medicines and an intermediate for agricultural chemicals, can be simply produced from an inexpensive starting material.
摘要翻译：本发明涉及通过不对称地还原5-羟基-2-戊酮来制备光学活性的1,4-戊二醇的方法，该方法容易以低成本获得。本发明还涉及一种光学活性1-取代的2-甲基吡咯烷的制备方法，其包括使光学活性的1,4-戊二醇磺酰化以将其转化成光学活性的磺酸盐化合物，并使该化合物与胺反应。根据本发明的方法，用作药物中间体和农药中间体的光学活性的1,4-丁二醇和光学活性的1-取代的2-甲基吡咯烷可以简便地从廉价的起始材料

122. 再颁专利

USRE39333E1 Process for the preparation of 5-hydroxy-3-oxopentanoic acid derivatives 有权
公开(公告)号：USRE39333E1
公开(公告)日：2006-10-10
申请号：US10705665
申请日：2000-06-02
申请人： Akira Nishiyama , Kenji Inoue
发明人： Akira Nishiyama , Kenji Inoue
IPC分类号： C07C69/66 , C07C59/185
CPC分类号： C12P7/62 , C07B2200/07 , C07C67/343 , C07C253/30 , C07D319/06 , C07C69/716 , C07C255/21 , C07C69/738
摘要： This invention provides a process for producing a 5-hydroxy-3-oxopentanoic acid, a useful pharmaceutical intermediate, easily from a readily available, inexpensive starting material without using any extraordinary production equipment such as a very-low-temperature reactor.Thus, this invention provides a process for producing a 5-hydroxy-3-oxopentanoic acid which comprises permitting a lithium amide to act upon a mixture of an acetic acid ester and a 3-hydroxypropionic acid derivative at not below −20° C. Further, this invention also provides a process for producing a 5-hydroxy-3-oxopentanoic acid which comprises treating a mixture of an acetic acid ester and a 3-hydroxypropionic acid derivative with a Grignard reagent to prepare a mixture of a compound and an acetic acid ester of the above formula (I), and permitting a lithium amide to act upon the mixture at a temperature not below −20° C. This invention provides a process for producing a 5-hydroxy-3-oxopentanoic acid, a useful pharmaceutical intermediate, easily from a readily available, inexpensive starting material without using any extraordinary production equipment such as a very-low temperature reactor. Thus, this invention provides a process for producing a 5-hydroxy-3-oxopentanoic acid which comprises permitting a lithium amide to act upon a mixture of an acetic acid ester and a 3-hydroxypropionic acid derivative at not below −20° C. Further, this invention also provides a process for producing a 5-hydroxy-3-oxopentanoic acid which comprises treating a mixture of an acetic acid ester and a 3-hydroxypropionic acid derivative with a Grignard reagent to prepare a mixture of a compound and an acetic acid ester of the above formula (I), and permitting a lithium amide to act upon the mixture at a temperature not below −20° C.

123. 发明授权

US07094594B2 Process for preparing optically active 2-[6-(hydroxy-methyl)-1,3-dioxan-4-yl] acetic acid derivatives 失效
标题翻译：光学活性的2- [6-（羟基 - 甲基）-1,3-二恶烷-4-基]乙酸衍生物的制备方法
公开(公告)号：US07094594B2
公开(公告)日：2006-08-22
申请号：US10048553
申请日：2001-06-05
申请人： Akira Nishiyama , Miho Horikawa , Yoshihiko Yasohara , Noboru Ueyama , Kenji Inoue
发明人： Akira Nishiyama , Miho Horikawa , Yoshihiko Yasohara , Noboru Ueyama , Kenji Inoue
IPC分类号： C12P41/00
CPC分类号： C07D319/06 , C12P7/42 , C12P17/06
摘要： The present invention is to provide a production technology by which an optically active 2-[6-(hydroxymethyl)-1, 3-dioxan-4-yl]acetic acid derivative, which are of value as pharmaceutical intermediates, can be produced from inexpensive and readily available starting materials without using any extraordinary equipment such as an ultra-low-temperature reactor.The present invention is a production process of an optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivative which comprises reacting an enolate, prepared by permitting a base or a 0-valent metal to act on an acetic acid ester derivative with (S)-β-hydroxy-γ-butyrolactone at a temperature not lower than −30° C. to give a dihydroxyoxohexanoic acid derivative, treating the same with an acylating agent in the presence of a base to produce a dihydroxyoxohexanoic acid monoacyl derivative, reducing this compound with a microorganism to produce a trihydroxyhexanoic acid monoacyl derivative, treating this compound with an acetal-forming reagent in the presence of an acid catalyst to produce an acyloxymethyldioxanylacetic acid derivative, and finally, subjecting this compound to solvolysis in the presence of a base.
摘要翻译：本发明提供一种生产技术，通过该技术，可以从廉价的方式制备价值为药物中间体的光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物和容易获得的起始材料，而不使用任何非常设备，例如超低温反应器。本发明是光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物的制备方法，该方法包括使通过使碱或0价金属在不低于-30℃的温度下用（S）-β-羟基-γ-丁内酯在乙酸酯衍生物上作用，得到二羟基氧代己酸衍生物，在酰化剂存在下用酰化剂处理碱化以制备二羟基氧己基单酰基衍生物，用微生物还原该化合物以产生三羟基己酸单酰基衍生物，在酸催化剂存在下用缩醛形成试剂处理该化合物，得到酰氧基甲基二恶烷基乙酸衍生物，最后，该化合物在碱存在下溶剂解。

124. 发明申请

US20050179091A1 Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：US20050179091A1
公开(公告)日：2005-08-18
申请号：US11104532
申请日：2005-04-13
申请人： Akira Nishiyama , Seiji Inumiya
发明人： Akira Nishiyama , Seiji Inumiya
IPC分类号： H01L29/78 , H01L21/265 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L27/01
CPC分类号： H01L21/28194 , H01L21/26586 , H01L21/28176 , H01L21/28202 , H01L29/511 , H01L29/512 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device and a method of manufacturing the semiconductor device are disclosed. A semiconductor device of one of several disclosed embodiments comprises a semiconductor layer having a source region and a drain region, and a gate insulating film provided on the semiconductor layer between the source region and the drain region. The gate insulating film comprising an oxide including a metal element and further includes at least one element selected from the group consisting of nitrogen and aluminum as a first element. The content of the first element is relatively higher at both ends near the source region and the drain region than at a center of the gate insulating film. A gate electrode is provided on the gate insulating film.

125. 发明授权

US06924536B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06924536B2
公开(公告)日：2005-08-02
申请号：US10372963
申请日：2003-02-26
申请人： Akira Nishiyama , Seiji Inumiya
发明人： Akira Nishiyama , Seiji Inumiya
IPC分类号： H01L29/78 , H01L21/265 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L31/119
CPC分类号： H01L21/28194 , H01L21/26586 , H01L21/28176 , H01L21/28202 , H01L29/511 , H01L29/512 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device and a method of manufacturing the semiconductor device are disclosed. A semiconductor device of one of several disclosed embodiments comprises a semiconductor layer having a source region and a drain region, and a gate insulating film provided on the semiconductor layer between the source region and the drain region. The gate insulating film comprising an oxide including a metal element and further includes at least one element selected from the group consisting of nitrogen and aluminum as a first element. The content of the first element is relatively higher at both ends near the source region and the drain region than at a center of the gate insulating film. A gate electrode is provided on the gate insulating film.
摘要翻译：公开了一种半导体器件及其制造方法。几个公开的实施例之一的半导体器件包括具有源极区和漏极区的半导体层以及设置在源极区和漏极区之间的半导体层上的栅极绝缘膜。所述栅极绝缘膜包括含有金属元素的氧化物，并且还包括选自由氮和铝组成的组中的至少一种元素作为第一元素。在源极区域和漏极区域两端的第一元件的含量比在栅极绝缘膜的中心处的含量相对较高。在栅极绝缘膜上设置栅电极。

126. 发明授权

US06720320B2 Phenoxypropylamine compounds 有权
标题翻译：苯氧基丙胺化合物
公开(公告)号：US06720320B2
公开(公告)日：2004-04-13
申请号：US09990389
申请日：2001-11-23
申请人： Akira Nishiyama , Masahiro Bougauchi , Takanobu Kuroita , Masanori Minoguchi , Yasunori Morio , Kouji Kanzaki
发明人： Akira Nishiyama , Masahiro Bougauchi , Takanobu Kuroita , Masanori Minoguchi , Yasunori Morio , Kouji Kanzaki
IPC分类号： A61P4300
CPC分类号： C07D413/14 , C07D209/42 , C07D401/12 , C07D401/14 , C07D405/12 , C07D405/14 , C07D409/12 , C07D409/14 , C07D413/04 , C07D413/12 , C07D417/12 , C07D417/14 , C07D491/10
摘要： The present invention relates to a phenoxypropylamine compound of the formula (I) wherein each symbol is as defined in the specification, an optically active compound thereof or a pharmaceutically acceptable salt thereof and hydrates thereof, which simultaneously show selective affinity for and antagonistic activity against 5-HT1A receptor, as well as 5-HT reuptake inhibitory activity, and can be used as antidepressants quick in expressing an anti-depressive effect.
摘要翻译：本发明涉及式（I）的苯氧基丙胺化合物，其中每个符号如说明书中所定义，其光学活性化合物或其药学上可接受的盐及其水合物，其同时显示出对5的选择性亲和力和拮抗活性 -HT1A受体，以及5-HT再摄取抑制活性，可用作快速表达抗抑郁作用的抗抑郁药。

127. 发明授权

US06593618B2 MIS semiconductor device having an elevated source/drain structure 失效
标题翻译：具有升高的源极/漏极结构的MIS半导体器件
公开(公告)号：US06593618B2
公开(公告)日：2003-07-15
申请号：US09994606
申请日：2001-11-28
申请人： Yoshiki Kamata , Akira Nishiyama
发明人： Yoshiki Kamata , Akira Nishiyama
IPC分类号： H01L2976
CPC分类号： H01L29/4983 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L29/41775 , H01L29/41783 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/7835
摘要： In the first aspect of the invention, a semiconductor device can effectively suppress the adverse short channel effect and the possible occurrence of junction leak current and has a low resistance diffusion layer to realize a short propagation delay time as a plurality of side wall films 4, 5 are formed at least in a part of the area between the gate electrode 3 and an elevated region 8 by laying a plurality of films in an appropriate order.
摘要翻译：在本发明的第一方面中，半导体器件可以有效地抑制不利的短沟道效应和可能发生的结漏电流，并且具有低电阻扩散层，以实现作为多个侧壁膜4的短传播延迟时间， 5通过以适当的顺序铺设多个膜而至少在栅极电极3和升高区域8之间的区域的一部分中形成。

128. 发明授权

US06054371A Method of manufacturing a semiconductor device by detachably mounting substrates to a holder board 失效
标题翻译：通过将基板可拆卸地安装到保持板来制造半导体器件的方法
公开(公告)号：US06054371A
公开(公告)日：2000-04-25
申请号：US162155
申请日：1998-09-29
申请人： Masakatsu Tsuchiaki , Yasushi Nakasaki , Akira Nishiyama , Yukihito Oowaki , Hirotaka Nishino
发明人： Masakatsu Tsuchiaki , Yasushi Nakasaki , Akira Nishiyama , Yukihito Oowaki , Hirotaka Nishino
IPC分类号： H01L21/762 , H01L21/02 , H01L21/68 , H01L25/04 , H01L25/18 , H01L27/108 , H01L27/12 , H01L21/30 , H01L21/00 , H01L21/44 , H01L21/46 , H01L21/84
CPC分类号： H01L21/6835 , H01L2221/68313 , H01L27/10897 , H01L2924/0002 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025
摘要： Disclosed is a method of manufacturing a semiconductor device, comprising the step of detachably mounting a plurality of semiconductor substrates to a first holder board so as to form a complex semiconductor substrate, and the step of subjecting the plural semiconductor substrates included in the complex semiconductor substrates to common steps of manufacturing a semiconductor device. At least one of the plural semiconductor substrates is mounted to a second holder board. The particular semiconductor substrate is detached from the second holder board and, then, mounted to the first holder board. Alternatively, at least one of the plural semiconductor substrates is detached from the first holder board and, then, mounted to a third holder board differing in size from the first holder board.
摘要翻译：公开了一种制造半导体器件的方法，包括以下步骤：将多个半导体衬底可拆卸地安装到第一保持器板以形成复合半导体衬底;以及对包含在复合半导体衬底中的多个半导体衬底进行处理的步骤涉及制造半导体器件的常规步骤。多个半导体衬底中的至少一个安装到第二保持器板。特定的半导体衬底从第二保持器板分离，然后安装到第一保持器板。或者，多个半导体衬底中的至少一个从第一保持器板分离，然后安装到尺寸与第一保持器板不同的第三保持器板。

129. 发明授权

US5947593A Twin-screw kneading apparatus 失效
标题翻译：双螺杆捏合装置
公开(公告)号：US5947593A
公开(公告)日：1999-09-07
申请号：US997255
申请日：1997-12-23
申请人： Kimio Inoue , Katsunori Takahashi , Tatsuya Tanaka , Masahiko Kashiwa , Shigehiro Kasai , Yoshinori Kuroda , Hideo Funahashi , Yasuaki Yamane , Koichi Miyake , Masashi Konno , Akira Nishiyama
发明人： Kimio Inoue , Katsunori Takahashi , Tatsuya Tanaka , Masahiko Kashiwa , Shigehiro Kasai , Yoshinori Kuroda , Hideo Funahashi , Yasuaki Yamane , Koichi Miyake , Masashi Konno , Akira Nishiyama
IPC分类号： B29B7/48 , B29B7/42 , B29B7/80 , B29C47/40 , B29C47/62 , B29C47/64 , B29K21/00
CPC分类号： B29C47/625 , B29C47/38 , B29C47/402 , B29C47/60 , B29C47/6056 , B29C47/6075 , B29C47/0009
摘要： A kneaded product of a desired state of kneading is available by causing a material to be kneaded to flow in tip clearances between rotor segments 1b and 1b of screw sets 1 and 1 and an inner wall surface of a chamber 4 while rotating the screw sets 1 and 1 provided to the right and the left of the chamber 4, and imparting a shearing force for dispersion. Each rotor segment 1b has a plurality of kneading blade 7 having different distances between the segment center and the top, so as to achieve a plurality of tip clearances different at least in the circumferential direction when the segment center is aligned with the chamber center.
摘要翻译：通过使螺旋组1的旋转部件1和1的转子部分1b和1b之间的顶端间隙和腔室4的内壁面一起旋转，可以获得所需捏合物的混炼物，和1设置在腔室4的右侧和左侧，并且赋予分散力的剪切力。每个转子段1b具有多个在分段中心和顶部之间具有不同距离的捏合叶片7，以便当分段中心与腔室中心对准时，至少在圆周方向上实现多个尖端间隙。

130. 发明授权

US5929284A Processes for producing .alpha.-halo ketones, .alpha.-halohydrins and epoxides 失效
标题翻译：制备α-卤代酮，α-卤代醇和环氧化物的方法
公开(公告)号：US5929284A
公开(公告)日：1999-07-27
申请号：US722102
申请日：1996-12-18
申请人： Akira Nishiyama , Tadashi Sugawa , Hajime Manabe , Kenji Inoue , Noritaka Yoshida
发明人： Akira Nishiyama , Tadashi Sugawa , Hajime Manabe , Kenji Inoue , Noritaka Yoshida
IPC分类号： C07C29/143 , C07C45/48 , C07C269/06 , C07C319/20 , C07C323/43 , C07D303/36 , C07C45/00
CPC分类号： C07D303/36 , C07C269/06 , C07C29/143 , C07C319/20 , C07C45/48
摘要： Processes for efficiently producing .alpha.-halo ketones, .alpha.-halohydrins and epoxides on an industrial scale. The prosesses include one for producing an .alpha.-halo ketone of general formula (3) by decarboxylating a product of reaction between a carboxilic acid derivative of general formula (1) and a metal enolate prepared from an .alpha.-haloacetic acid of general formula (2) or an acceptable salt thereof, one for producing an by reducing the .alpha.-halo ketone (3), and one for producing an epoxide (13) by treating the .alpha.-halohydrin (11) with a base to effect ring closure. The above prosesses are particularly suitable for producing optically active .alpha.-halo ketones, .alpha.-halohydrins and epoxides from the corresponding .alpha.-amino acid derivatives. ##STR1##
摘要翻译： PCT No.PCT / JP96 / 00212 Sec。 371日期：1996年12月18日 102（e）1996年12月18日日期PCT 1996年2月2日PCT PCT。第WO96 / 23756号公报日期1996年8月8日工业规模高效生产α-卤代酮，α-卤代醇和环氧化物的方法。前药包括通过使通式（1）的羧酸衍生物与由通式（2）的α-卤代乙酸制备的金属烯醇化物脱羧的方法来制备通式（3）的α-卤代酮，）或其可接受的盐，其中通过用碱来还原α-卤代酮（3）和通过用碱处理α-卤代醇（11）来制备环氧化物（13）来制备，以实现闭环。上述产品特别适用于从相应的α-氨基酸衍生物制备光学活性的α-卤代酮，α-卤代醇和环氧化物。

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