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121. 发明专利

JPS5859440A PHOTOSENSITIVE POLYMER COMPOSITION 失效
公开(公告)号：JPS5859440A
公开(公告)日：1983-04-08
申请号：JP15751681
申请日：1981-10-05
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： KATAOKA FUMIO , SHIYOUJI FUSAJI , OBARA ISAO , TAKEMOTO KAZUNARI , YOKONO ATARU , ISOGAI TOKIO , KOJIMA MITSUMASA
IPC分类号： C08L79/08 , G03F7/008 , G03G5/07
摘要： PURPOSE:To enhance solubility in an aprotic polar solvent and compatibility with a polyamide carboxylic acid, by using an aromatic bisazide having a polar group or an org. silicon group introduced into the molecule as a photoinitiator for preparing a polyamide carboxylic acid having photosensitivity. CONSTITUTION:A polymer contg. a polyamide carboxylic acid or its derivative having a photosensitive unsatd. bond in a side chain of each unit of one of monomer unit constituents represented by general formulaIgives a relief structure of a heat resistant polymer, and an aromatic bisazide compd. having formula II as a photoinitiator, and when needed, a sensitizer are added to said polyamide acid. Since this is a polar polymer, uses of said aromatic bisazide compd. into which a polar group or an org. silicon group is introduced raises mutual action and enhances sensitivity. A relief pattern obtained by exposure and development is precursor of a heat resistant polyimide, so it is converted into a heat resistant polymer by heat treatment. In the formulaI, R , R , R are each aromatic group; R is a group having an unsatd. bond, or H or ammonium ion; Y is a group having an unsatd. group; X is a divalent group linking R and Y; W is H or X-Y; (n) is 1 or 2; (x) is 3-100; and COOR is combined to the ortho- or para- position of the amide group. In formula II, P is N3, or -SO2N3; R is a trivalent org. group; and Z is -OH, or -OR , and R being lower alkyl.

122. 发明专利

JPS5858540A PHOTOSENSITIVE POLYMER COMPOSITION 失效
公开(公告)号：JPS5858540A
公开(公告)日：1983-04-07
申请号：JP15751581
申请日：1981-10-05
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： KOJIMA MITSUMASA , KATAOKA FUMIO , SHIYOUJI FUSAJI , OBARA ISAO , TAKEMOTO KAZUNARI , YOKONO ATARU , ISOGAI TOKIO
IPC分类号： C08L79/08 , G03F7/012 , G03F7/038 , G03G5/07
摘要： PURPOSE:To obtain a photosensitive polymer composition suitable for manufacture of semiconductors, high in sensitivity, good in viscosity stability, and superior in heat resistance, insulation resistance, etc., by adding each specified polyamide, bisazide, and amine compd. and when needed, a sensitizer. CONSTITUTION:A dimethylformamide or the like solution contains a compsn. of a polymer having formulaI(R is >=2C tri- or tetra-valent group; M is H or an alkali metal; and (n) is 1 or 2) a bisazide compd. having formula II (R3 is a divalent org. group), and an amine compd. having H combined to a tertiary or secondary carbon, or an unsubstd. group in the molecule, and further when needed, a sensitizer. This compsn. is coated on a base, dried, exposed, developed, and heated to obtain a relief pattern of polybenzoxadinone. The obtained film has high sensitivity, superior insulation resistance due to absence of inorg. salts, and high heat resistance, and said soln. of the compsn. has good viscosity stability during storage.

123. 发明专利

JPS583884A HEAT GENERATING RESISTOR FOR HEAT SENSITIVE RECORDING HEAD AND PRODUCTION THEREOF 失效
公开(公告)号：JPS583884A
公开(公告)日：1983-01-10
申请号：JP10136481
申请日：1981-07-01
申请人： HITACHI LTD
发明人： KAWAHITO MICHIYOSHI , MITANI MASAO , TSUNODA TOYOJI , KAMEI TSUNEAKI , TAKEMOTO KAZUNARI
IPC分类号： H01C7/00 , B41J2/335 , H01C17/06 , H01L49/00
摘要： PURPOSE:To produce a heat generating resistor which is free from cracks in its oxidation resisting layer and wear resisting layer by such an arrangement wherein the outer circumference of an adhesion layer pattern at the upper layer of a heat generating resistor layer is formed inside the outer circumference of the resistor layer and the outer circumference of a wiring layer pattern at the upper layer of the adhesion layer is formed inside the outer circumference of the adhesion layer. CONSTITUTION:A glazed glass layer 2 and an etching resisting layer 3 of a resistor are formed on a substrate 1 and a wiring unit is formed by providing a resistor layer 4, an adhesion layer 5 and a wiring layer 6 on the substrate by photoetching method. At this time, etching is performed in the order of the wiring layer 6, adhesion layer 5 and resistor layer 4, and after that reetching is performed in the order of the adhesion layer 5 and the wiring layer 6 and by this the adhesion layer 5 and the wiring layer 6 are properly shaped to the free from overhangs. In forming a resistor unit, etching is performed in the order of the wiring layer 6 and the adhesion layer 5 and then the wiring layer 6 is reetched. Said heat generating resistor can be obtained by forming an oxidation resisting layer 7 of the resistor and a wear resisting layer 8 in the next stage.

124. 发明专利

JPS57159045A MANUFACTURE OF MULTILAYER WIRING STRUCTURE 失效
公开(公告)号：JPS57159045A
公开(公告)日：1982-10-01
申请号：JP4403181
申请日：1981-03-27
申请人： HITACHI LTD
发明人： NATE KAZUO , TAKEMOTO KAZUNARI , KOBAYASHI TOSHIO
IPC分类号： G03F7/26 , C08F16/00 , C08F16/36 , C08F16/38 , C08F20/00 , C08F20/10 , C08F220/14 , G03C1/72 , G03C5/00 , G03F7/039 , H01L21/312 , H01L21/768 , H01L23/522
摘要： PURPOSE:To obtain a multilayer wiring structure having high accuracy and high reliability by employing positive type high molecular material resist which senses with high energy beam for the etching resist of an insulating layer. CONSTITUTION:The first insulating layer and the first layer wire conductor 2 are formed on a semiconductor substrate 1, the second insulating layer 3 is then formed on the overall surface, and radiation sensitive high molecular material film 4 of electron beam made of copolymer containing more than 10mol% of unit represented by the general formula (I) or (II) and less than 90mol% of methacrylic acid alkyl ester, methacrylic acid, methacrylonitrile or the like is used as positive resist on the layer 3, thereby etching the layer 3 in high accuracy. In the general formulae, R represents hydrogen, methyl group, methoxy group, chlorine, dimethyl amino group, and n represents the degree of polymerization.

125. 发明专利

JPS55145355A SEMICONDUCTOR DEVICE AND FABRICATION OF THE SAME 失效
公开(公告)号：JPS55145355A
公开(公告)日：1980-11-12
申请号：JP5251179
申请日：1979-05-01
申请人： HITACHI LTD
发明人： SHIYOUJI FUSAJI , TAKEMOTO KAZUNARI , SUDOU RIYOUICHI , WATANABE TAKESHI , YOKONO ATARU , ISOGAI TOKIO
IPC分类号： H01L21/768 , H01L21/31 , H01L21/312 , H01L23/522
摘要： PURPOSE:To realize a multilayer wiring structure having excellent moisture-proofness and high reliability by employing silicone resin having special structural formula as insulating material between a plurality of wiring conductor layers formed on a semiconductor substrate. CONSTITUTION:A silicone resin film 13 is formed on the entire surface of the first wiring conductor layer 12 formed on a semiconductor substrate 11, and an inorganic insulating film 14 perforated with predetermined openings 16 thereat is formed thereon. The film 13 is removed through the openings 16, and all the films 14 are further removed. The film 13 used in this case may have excellent medical resistance and heat resistance, and chemical stability. Thereafter, the second wiring conductor layer 18 of predetermined pattern extended on the film 13 from the layer 12 in the openings 17 of the film 13 is formed thereon. Further, similar steps are repeated to form a wiring conductor layer further on the layer 18.

126. 发明专利

JPS5512911A SUBSTRATE FOR HOLDING LIQUID CRYSTAL 失效
公开(公告)号：JPS5512911A
公开(公告)日：1980-01-29
申请号：JP8510778
申请日：1978-07-14
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , SUDOU RIYOUICHI , SHIYOUJI FUSAJI , TAKEMOTO KAZUNARI , YOKONO ATARU
IPC分类号： G02F1/1337 , G02F1/133 , G09F9/00
摘要： PURPOSE:To molecule axis of a liquid crystal can be made parallel with the surface of a substrate and be oriented to the specified direction of the substrate for any liquid material by making an orientation control film from a hardened material of polyparabanic-acid sythesized resin. CONSTITUTION:Solution of polyparabanic-acid synthesized resin, which has a unit construction of a formula in the Figure and is resolved in amide-series solvent, is applied on a glass substrate on which tranparent electrodes are selectively attached, thereafter heated, and hardened. A liquid crystal is held by the glass substrate on which said hardened film is applied, thereby a liquid-crystal display device is constituted. In this way, can be obtained the liquid-crystal display, which has the uniform orientation of the liquid crystal material througout the broad area of substrate, is stable during the gradual elapse of time, and has a long service life and excellent characteristics.

127. 发明专利

JPS559527A LIQUID CRYSTAL SANDWICHING SUBSTRATE 失效
公开(公告)号：JPS559527A
公开(公告)日：1980-01-23
申请号：JP8189178
申请日：1978-07-07
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , SUDOU RIYOUICHI , SHIYOUJI FUSAJI , TAKEMOTO KAZUNARI , YOKONO ATARU
IPC分类号： G02F1/1339 , C09D183/04 , G02F1/133 , G02F1/1337 , G09F9/00
摘要： PURPOSE:To enable molecular axes of liquid crystal to be oriented parallel to substrate plane and in the characteristic direction of the substrate plane even with any liquid crystal material by providing the specific polymer film in continuation to the substrate surfaces in contact with the liquid crystal. CONSTITUTION:The ladder type organosilicone polymer having phenyl groups such as of polyphenyl alkyl silesesquioxan of the formula (R is phenyl, phenyl halide, methyl phenyl halide or alkyl of C1-6) is dissolved in a suitable solvent. This solvent is coated on the liquid-crystal-sandwiching substrates which are selectively provided with transparent electrodes. After it is heat treated, it is rubbed, whereby the homogeneous orientation satisfactory for various kinds of liquid crystals is obtained. Since this coating film is superior in heat resistance and does not restrict liquid crystal element assemblies, the liquid crystal display device which is stable with time, has a long life and high characteristics and is non-coloring and high display quality may be obtained.

128. 发明专利

JPS5481393A CURABLE RESIN COMPOSITION 失效
公开(公告)号：JPS5481393A
公开(公告)日：1979-06-28
申请号：JP14813877
申请日：1977-12-12
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： TAJIMA TETSUO , HIYOSHI YASUO , TAKEMOTO KAZUNARI
IPC分类号： C08F299/00 , C08F290/00
摘要： PURPOSE:A curable resin composition suitable for insulating resin for casting, having improved heat deterioration, oxidation, and impact resistance, and rubber elasticity, consisting of a specific telecheliceral polymer and a vinyl monomer as a reactive diluent. CONSTITUTION:A) A telecheliceral polymer, e.g., a polymer having a molecular weight of 1,000-3,000 shown by the formula (m/n= 1/9-9/1; R is alkyl), obtained by reacting (a) a copolymer of an ethylene having terminal hydroxyl groups with a alpha-olefin with (b) (meth) acrylic acid is blended with B) a vinyl monomer, e.g., styreme, as a reactive diluent, and C) a peroxide, e.g., hydroperoxide, etc. as a calalyst to give the desived curable resin composition. The weight ratio of the ingredient A to B is preferebly 50/50-70/30.

129. 发明专利

JPS5337819A MANUFACTURING PROCESS OF FLYBACK TRANSFORMERS 失效
公开(公告)号：JPS5337819A
公开(公告)日：1978-04-07
申请号：JP11187076
申请日：1976-09-20
申请人： HITACHI LTD
发明人： HIYOSHI YASUO , SUDOU RIYOUICHI , TAKEMOTO KAZUNARI , ISOGAI TOKIO
IPC分类号： H04N3/19 , C08G59/00 , C08K3/22 , C08K3/32 , C08L63/00 , H01B3/00 , H01B3/40 , H01F5/06 , H01F19/00 , H01F27/00 , H01F38/42 , H01F41/12 , H04N3/18
摘要： PURPOSE:To insulation-treat so that harmful gas cannot be generated and magnetic wires or electrodes cannot be etched when a flyback transformer is burnt.

130. 发明专利

JPS5227546A THICK FILM CAPACITOR 失效
公开(公告)号：JPS5227546A
公开(公告)日：1977-03-01
申请号：JP10299975
申请日：1975-08-27
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , ISHIHARA KIYOSHI , NATE KAZUO
IPC分类号： H01G4/33 , H01G4/12

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