专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

121. 发明授权

US07510949B2 Methods for producing a multilayer semiconductor structure 有权
标题翻译：多层半导体结构的制造方法
公开(公告)号：US07510949B2
公开(公告)日：2009-03-31
申请号：US11106135
申请日：2005-04-13
申请人： Carlos Mazure , Bruno Ghyselen
发明人： Carlos Mazure , Bruno Ghyselen
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259
摘要： Methods for producing a multilayer semiconductor structure are described. In an embodiment, the method includes providing a support substrate made of a first semiconductor material having a first lattice parameter, and depositing a layer of a second semiconductor material having a second lattice parameter, substantially different than the first, onto the support substrate to form an intermediate structure having an interface therebetween, the depositing being conducted such that most of the defects are confined to an adaptation layer located in a region adjacent to the interface. The method also includes creating a zone of weakness in the intermediate structure, bonding the second semiconductor material layer to a target substrate, detaching the support substrate at the zone to obtain a multilayer semiconductor structure having an exposed surface where detached, and fully removing the adaptation layer to obtain a relaxed thin layer of the second semiconductor material having a high quality surface.
摘要翻译：对多层半导体结构体的制造方法进行说明。在一个实施例中，该方法包括提供由具有第一晶格参数的第一半导体材料制成的支撑衬底，以及将具有与第一晶格参数基本上不同于第一晶格参数的第二半导体材料层沉积到支撑衬底上以形成其间具有界面的中间结构，所述沉积被导通，使得大部分缺陷被限制在位于与界面相邻的区域中的适配层。该方法还包括在中间结构中产生弱点区域，将第二半导体材料层粘合到目标基板上，在该区域分离支撑基板，以获得具有分离的暴露表面的多层半导体结构，并且完全去除适应以获得具有高质量表面的第二半导体材料的松弛薄层。

122. 发明授权

US07348260B2 Method for forming a relaxed or pseudo-relaxed useful layer on a substrate 有权
标题翻译：在基材上形成松弛或假松弛有用层的方法
公开(公告)号：US07348260B2
公开(公告)日：2008-03-25
申请号：US11181414
申请日：2005-07-13
申请人： Bruno Ghyselen
发明人： Bruno Ghyselen
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.
摘要翻译：描述了在衬底上形成松弛或假松弛有用层的方法。该方法包括在施主衬底上生长应变半导体层，通过在某一粘度温度下变得粘稠的材料的玻璃质层将接收器衬底接合到应变半导体层以形成第一结构。该方法还包括从第一结构分离施主衬底以形成包括接受衬底，玻璃体层和应变层的第二结构，然后在足够的温度和时间对第二结构进行热处理，以缓解应变中的应变并且在接收器基板上形成松弛或假松弛的有用层。

123. 发明授权

US07235427B2 Method for treating substrates for microelectronics and substrates obtained by said method 有权
标题翻译：用于处理通过所述方法获得的用于微电子学和衬底的衬底的方法
公开(公告)号：US07235427B2
公开(公告)日：2007-06-26
申请号：US11063867
申请日：2005-02-24
申请人： Thierry Barge , Bruno Ghyselen , Toshiaki Iwamatsu , Hideki Naruoka , Junichiro Furihata , Kiyoshi Mitani
发明人： Thierry Barge , Bruno Ghyselen , Toshiaki Iwamatsu , Hideki Naruoka , Junichiro Furihata , Kiyoshi Mitani
IPC分类号： H01L21/48
CPC分类号： H01L21/306 , H01L21/30625 , H01L21/76254 , Y10T428/12528
摘要： An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.
摘要翻译：根据本发明的多层晶片的实施例包括基底基板，与基底基板相关联的第一层，以及在轴向方向上与基底基板相反一侧的第一层上的第二层，并且具有侧向边缘。第一层包括沿着垂直于轴向方向测量的沿轴向突出并且横向邻近第二层布置的脊，用于保护侧边缘。该脊可以围绕横向边缘围绕轴向横截面以防止边缘下降。此外，脊可以具有大于第二层的轴向厚度的轴向高度。在一个实施例中，第二层包括氧化半导体，第一层包括氧化绝缘体。

124. 发明申请

US20070141803A1 Methods for making substrates and substrates formed therefrom 审中-公开
标题翻译：制造基材和由其形成的基材的方法
公开(公告)号：US20070141803A1
公开(公告)日：2007-06-21
申请号：US11505668
申请日：2006-08-16
申请人： Alice Boussagol , Bruce Faure , Bruno Ghyselen
发明人： Alice Boussagol , Bruce Faure , Bruno Ghyselen
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , H01L21/2007
摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support.
摘要翻译：一种用于制造用于光学，电子或光电子的基板的方法。该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。

125. 发明授权

US07115481B2 Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效
标题翻译：用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层
公开(公告)号：US07115481B2
公开(公告)日：2006-10-03
申请号：US10686084
申请日：2003-10-14
申请人： Bruno Ghyselen , Cécile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
发明人： Bruno Ghyselen , Cécile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. Atomic species are implanted into the useful layer to a controlled mean implantation depth to form a zone of weakness within the useful layer that defines first and second useful layers. Next, a stiffening substrate is bonded to the front face of the initial structure. The first useful layer is then detached from the second useful layer along the zone of weakness to obtain a pair of semiconductor structures with a first structure including the stiffening substrate and the first useful layer and a second structure including the support substrate and the second useful layer. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译：一种用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层。该方法包括提供初始结构，其包括在支撑衬底上具有正面的有用层。将原子物质植入有用层中至受控的平均植入深度，以形成限定第一和第二有用层的有用层内的弱点区域。接下来，将加强基板粘合到初始结构的正面。然后沿着弱化区从第二有用层分离第一有用层，以获得一对具有第一结构的半导体结构，该第一结构包括加强衬底和第一有用层，以及包括支撑衬底和第二有用层的第二结构。所获得的结构可用于电子学，光电子学或光学领域。

126. 发明授权

US07018913B2 Method for implanting atomic species through an uneven surface of a semiconductor layer 有权
标题翻译：通过半导体层的不平坦表面注入原子种类的方法
公开(公告)号：US07018913B2
公开(公告)日：2006-03-28
申请号：US10840599
申请日：2004-05-05
申请人： Bruno Ghyselen , Takeshi Akatsu
发明人： Bruno Ghyselen , Takeshi Akatsu
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/26506 , H01L21/76254
摘要： A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
摘要翻译：一种用于通过半导体层的不平坦表面注入原子物质的方法。该技术包括以足够的量并以增加表面均匀性的方式在不平坦表面上施加覆盖层。该方法还包括通过覆盖层和不平坦表面注入原子物质，以获得层中原子物质的更均匀的注入深度。

127. 发明授权

US07018910B2 Transfer of a thin layer from a wafer comprising a buffer layer 有权
标题翻译：从包括缓冲层的晶片转移薄层
公开(公告)号：US07018910B2
公开(公告)日：2006-03-28
申请号：US10614327
申请日：2003-07-08
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
IPC分类号： H01L21/30
CPC分类号： H01L21/76259 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/76254 , Y10S438/933
摘要： A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.
摘要翻译：一种制造由复合结构施主晶片获得的半导体材料薄层结构的方法。施主晶片包括匹配衬底的晶格参数匹配层，其有利地具有具有第一晶格参数的半导体材料的上层。具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜被匹配层紧张。在匹配衬底中产生弱点区域以促进分裂。松弛层具有基本上与第一晶格参数相同的标称晶格参数。将松弛层转移到接收基板。可以通过该过程制造许多不同的晶片。

128. 发明授权

US07018909B2 Forming structures that include a relaxed or pseudo-relaxed layer on a substrate 有权
标题翻译：在基材上包含松弛或假松弛层的成形结构
公开(公告)号：US07018909B2
公开(公告)日：2006-03-28
申请号：US10784016
申请日：2004-02-20
申请人： Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
发明人： Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76259 , H01L21/324 , H01L21/76254 , H01L2221/68363
摘要： The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.
摘要翻译：本发明涉及在衬底上形成松弛或假松弛层的方法，其中松弛层可以是半导体材料。该方法的实现包括在施主衬底上生长弹性应力的半导体材料层，形成粘性材料的玻璃层并将其粘合到应力层，去除供体衬底的一部分以形成包括玻璃层的结构，应力层和供体衬底的表面层，然后在至少玻璃质层的粘度温度的温度下对结构进行热处理以使应力层松弛。玻璃状层也可以结合到接收基板，从而可以将结构转移到其上。实现也涉及从该方法获得的结构。

129. 发明授权

US06991956B2 Methods for transferring a thin layer from a wafer having a buffer layer 有权
标题翻译：从具有缓冲层的晶片转移薄层的方法
公开(公告)号：US06991956B2
公开(公告)日：2006-01-31
申请号：US11032844
申请日：2005-01-10
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Nicolas Daval
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Nicolas Daval
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.
摘要翻译：描述了从晶片转移半导体材料层的方法。晶片包括支撑基板和包括具有第一晶格参数的材料的缓冲层的上表面。在一个实施例中，该技术包括在缓冲层上生长应变层。应变层由具有与第一晶格参数基本不同的标称晶格参数的半导体材料制成，并且其生长到足够薄的厚度以避免其中的应变松弛。该方法还包括在应变层上生长松弛层。松弛层由硅制成，并且具有至少一种其它半导体材料的浓度，其具有基本上与第一晶格参数相同的标称晶格参数。该技术还包括在缓冲层中提供弱化区域，并提供能量以在弱化区域分离结构。该结构包括缓冲层的一部分，应变层和松弛层。最后; 该方法包括在结构的松弛层中富集至少一种其它半导体材料的浓度。

130. 发明授权

US06982210B2 Method for manufacturing a multilayer semiconductor structure that includes an irregular layer 有权
标题翻译：一种制造包括不规则层的多层半导体结构的方法
公开(公告)号：US06982210B2
公开(公告)日：2006-01-03
申请号：US10728341
申请日：2003-12-03
申请人： Bruno Ghyselen , Takeshi Akatsu
发明人： Bruno Ghyselen , Takeshi Akatsu
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： A method for manufacturing a multilayer semiconductor structure that includes an irregular layer. In an embodiment, the method includes providing a layer of irregular material on a donor substrate. The irregular layer has a flat face at an interface with the donor substrate, and has an opposite, irregular face. Next; a weakened zone is created at a predetermined depth within the donor substrate. An intermediate layer of material is then provided that covers the irregular face of the irregular layer, the intermediate layer providing a substantially flat surface. The substantially flat surface of the intermediate layer is then bonded to a receiver substrate, and the donor substrate is detached along the weakened zone to form the multilayer semiconductor structure. The multilayer structure includes an useful layer, the irregular layer, the intermediate layer and the receiver substrate, wherein all of the irregular material of the irregular layer is present in the structure.
摘要翻译：一种制造包括不规则层的多层半导体结构的方法。在一个实施例中，该方法包括在施主衬底上提供不规则材料层。不规则层在与施主衬底的界面处具有平坦的表面，并且具有相反的不规则面。下一个; 在供体衬底内的预定深度产生弱化区。然后提供覆盖不规则层的不规则面的中间材料层，中间层提供基本平坦的表面。然后将中间层的基本上平坦的表面接合到接收器基板，并且施主基板沿着弱化区域分离以形成多层半导体结构。多层结构包括有用层，不规则层，中间层和接收衬底，其中不规则层的所有不规则材料都存在于结构中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式