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121. 发明授权

US07264907B2 Photomask having central and peripheral line patterns 失效
标题翻译：具有中央和外围线图案的光掩模
公开(公告)号：US07264907B2
公开(公告)日：2007-09-04
申请号：US10802052
申请日：2004-03-17
申请人： Kunio Watanabe
发明人： Kunio Watanabe
IPC分类号： G03F1/00
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： Each of patterns on two types of photomasks, including identical central pattern portions, each having a line pattern on the center of a substrate, and peripheral pattern portions around the central pattern portions, and having distances between the central pattern portion and the peripheral pattern portion different from each other, is transferred onto a wafer. Thereafter, each line width of the transferred patterns corresponding to the line pattern of each photomask is measured. The difference between each of line widths is obtained, from which the flare rate is calculated.
摘要翻译：两种类型的光掩模上的每个图案，包括相同的中心图案部分，每个在基板的中心具有线图案，以及围绕中央图案部分的周边图案部分，并且在中心图案部分和周边图案部分之间具有距离彼此不同，被转移到晶片上。此后，测量对应于每个光掩模的线图案的转印图案的每个线宽。获得每个线宽之间的差异，从其计算耀斑率。

122. 发明申请

US20070129566A1 FLUOROADAMANTANE DERIVATIVE 失效
标题翻译：荧光素衍生物
公开(公告)号：US20070129566A1
公开(公告)日：2007-06-07
申请号：US11567391
申请日：2006-12-06
申请人： Shu-zhong WANG , Taiki Hoshino , Kimiaki Kashiwagi , Takashi Okazoe , Eisuke Murotani , Masahiro Ito , Kunio Watanabe
发明人： Shu-zhong WANG , Taiki Hoshino , Kimiaki Kashiwagi , Takashi Okazoe , Eisuke Murotani , Masahiro Ito , Kunio Watanabe
IPC分类号： C07C69/52
CPC分类号： C07C69/653 , C07C29/095 , C07C35/52 , C07C67/14 , C07C67/287 , C07C2603/74 , C07C69/708
摘要： Adamantane derivates which can be material compounds of a polymer excellent in etching resistance and having improved transmittance to light having a short wavelength, are produced by an economically advantageous process from readily available materials. A compound (10) is subjected to esterification reaction with a compound (11) to obtain a compound (12), which is subjected to fluorination in a liquid phase to obtain a compound (13), which is then subjected to hydrolysis or alcoholysis to obtain a compound (2), which is then reacted with a compound (15) thereby to obtain a compound (1). Here, A to J are —CFH— or —CF2—; RF is a perfluoroalkyl group or the like; X10 is F or the like; Y2 is H or OH; Y3 is H or RFCOO—; Y4 is H, F or RFCOO—; Y5 is H, F, RFCOO— or OH; Y0 is H, F, —OCOCR1═CH2 or OH: R1 is a hydrogen atom, a methyl group or the like; and X11 is OH or a halogen atom:
摘要翻译：金刚烷衍生物可以通过从容易获得的材料的经济上有利的方法产生耐蚀性优异且具有改善的具有短波长的光的透射率的聚合物的材料化合物。化合物（10）与化合物（11）进行酯化反应，得到化合物（12），将其进行液相氟化，得到化合物（13），然后进行水解或醇解得到化合物（2），然后与化合物（15）反应，得到化合物（1）。这里，A至J为-CFH-或-CF 2 - RF是全氟烷基等; X 10是F等; Y 2是H或OH; Y 3是H或R 0 COO-; Y 4是H，F或R“COO-; H 5是H，F，R F CO或O-; Y 0是H，F，-OCOCR 1 -CH 2或OH：R 1是氢原子，甲基等; 并且X 11是OH或卤素原子：

123. 发明申请

US20070057314A1 Integrated circuit device and electronic instrument 审中-公开
标题翻译：集成电路器件和电子仪器
公开(公告)号：US20070057314A1
公开(公告)日：2007-03-15
申请号：US11515909
申请日：2006-09-06
申请人： Kanji Natori , Kimihiro Maemura , Tomo Takaso , Kunio Watanabe , Masahiro Hayashi
发明人： Kanji Natori , Kimihiro Maemura , Tomo Takaso , Kunio Watanabe , Masahiro Hayashi
IPC分类号： H01L29/788
CPC分类号： G11C16/0416 , G09G3/3688 , G09G3/3696 , G11C2216/10 , H01L27/115 , H01L27/11521 , H01L27/11558
摘要： A programmable ROM block provided in an integrated circuit device includes a memory cell having a single-layer-gate structure in which a floating gate used in common as gates of a write/read transistor and an erase transistor is opposite to a control gate formed of an impurity layer through an insulating layer. The memory cell the cell was backward has a triple-well structure including a shallow well of a first conductivity type formed on a deep well of a second conductivity type, a ring-shaped shallow well of the second conductivity type which encloses the shallow well of the first conductivity type, and top impurity regions formed in the shallow well of the first conductivity type and the ring-shaped shallow well of the second conductivity type.
摘要翻译：设置在集成电路器件中的可编程ROM块包括具有单层栅极结构的存储单元，其中，作为写入/读取晶体管和擦除晶体管的栅极共同使用的浮动栅极与由控制栅极形成的控制栅极相反通过绝缘层的杂质层。电池后退的存储单元具有三阱结构，其包括形成在第二导电类型的深阱上的第一导电类型的浅阱，第二导电类型的环状浅阱，其包围浅阱第一导电类型和形成在第一导电类型的浅阱中的顶部杂质区域和第二导电类型的环形浅阱。

124. 发明授权

US07161025B2 Method for producing a fluorinated ester compound 有权
标题翻译：氟化酯化合物的制造方法
公开(公告)号：US07161025B2
公开(公告)日：2007-01-09
申请号：US11105518
申请日：2005-04-14
申请人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Koichi Yanase , Yasuhiro Suzuki , Daisuke Shirakawa
发明人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Koichi Yanase , Yasuhiro Suzuki , Daisuke Shirakawa
IPC分类号： C07C69/63
CPC分类号： C07C67/287 , C07C41/06 , C07C51/60 , C07C67/14 , C07C67/297 , C07C53/50 , C07C53/46 , C07C59/135 , C07C69/708 , C07C69/63 , C07C43/178
摘要： The present invention provides a method for producing industrially useful fluorine-containing compounds such as a fluorinated ester compound and an acid fluoride compound.Namely, the present invention resides in a method for producing a fluorinated ester compound, which comprises fluorinating an ester compound which is an ester of a compound having hydroxyl group(s) with a compound having acyl fluoride group(s) and which has a structure which can be fluorinated, in a liquid phase to produce a fluorinated ester compound, wherein the fluorination is carried out in the form of a liquid mixture of the ester compound and the compound having acyl fluoride group(s).
摘要翻译：本发明提供了一种制造工业上有用的含氟化合物如氟化酯化合物和酰氟化合物的方法。即，本发明涉及氟化酯化合物的制造方法，其特征在于，将具有羟基的化合物的酯化合物与具有酰氟基的化合物氟化，并且具有结构其可以在液相中被氟化以产生氟化酯化合物，其中氟化是以酯化合物和具有酰氟基团的化合物的液体混合物的形式进行的。

125. 发明授权

US07053238B2 Process for producing fluorinated polyvalent carbonyl compound 失效
公开(公告)号：US07053238B2
公开(公告)日：2006-05-30
申请号：US10891155
申请日：2004-07-15
申请人： Takashi Okazoe , Kunio Watanabe , Daisuke Shirakawa , Masahiro Ito , Shin Tatematsu
发明人： Takashi Okazoe , Kunio Watanabe , Daisuke Shirakawa , Masahiro Ito , Shin Tatematsu
IPC分类号： C07C69/63
CPC分类号： C07C67/14 , C07C45/54 , C07C51/60 , C07C67/287 , C07C67/29 , C07C67/297 , C07C67/307 , C07C59/21 , C07C53/46 , C07C69/63
摘要： A fluorinated polyvalent carbonyl compound is produced by an economically advantageous method from inexpensive materials without requiring a complicated synthetic process step. Namely, the present invention comprises reacting a polyvalent alcohol having at least two kinds of alcohol skeletons selected among a primary alcohol, a secondary alcohol and a tertiary alcohol, with an acid halide to obtain a polyvalent ester compound, fluorinating it in a liquid phase to obtain a perfluorinated polyvalent ester compound, and cleaving the ester bonds derived from primary and secondary alcohols in the perfluoropolyvalent ester compound to obtain a fluorinated polyvalent carbonyl compound.

126. 发明授权

US06951957B2 Process for producing a fluorine-containing compound by liquid phase fluorination 有权
标题翻译：通过液相氟化制备含氟化合物的方法
公开(公告)号：US06951957B2
公开(公告)日：2005-10-04
申请号：US10421924
申请日：2003-04-24
申请人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Hidenobu Murofushi
发明人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Hidenobu Murofushi
IPC分类号： C07C51/58 , C07B39/00 , C07C51/60 , C07C53/50 , C07C59/135 , C07C67/287 , C07C67/307 , C07C69/63 , C07C69/708 , C07D317/16 , C07D317/42 , C08F16/24
CPC分类号： C07D317/42 , C07B39/00 , C07C51/60 , C07C59/135 , C07C67/08 , C07C67/11 , C07C67/287 , C07C69/63 , C07C69/708 , C07C2601/14 , C07C53/50 , C07C69/734
摘要： The invention provides a process for producing a fluorine-containing compound from an inexpensive material.Namely, Compound I such as RACH2OH is reacted with Compound II such as XCORB to form Compound III such as RACH2OCORB, followed by fluorination in a liquid phase to form Compound IV such as RAFCF2OCORBF, which is converted to Compound V such as RAFCOF and/or Compound VI such as RBFCOF. RA is an alkyl group or the like, RB is a perhalogenoalkyl group or the like, RAF and RBF are fluorinated RA and RB, and X is halogen.
摘要翻译：本发明提供从廉价材料制备含氟化合物的方法。也就是说，将化合物I如R“CH 2 OH与化合物II如XCOR B”反应形成化合物III，例如R SUP 然后在液相中氟化以形成化合物IV，例如R AF AF＆lt; SUB＆gt;＆lt; 将其转化为化合物V，例如R AFFFF和/或化合物VI如R BF BF，中粮 R A是烷基等，R B是全卤代烷基等，R AF和R BF， R 2是氟化的R A和R B，并且X是卤素。

127. 发明申请

US20050192456A1 Method for producing a fluorinated ester compound 有权
标题翻译：氟化酯化合物的制造方法
公开(公告)号：US20050192456A1
公开(公告)日：2005-09-01
申请号：US11105518
申请日：2005-04-14
申请人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Koichi Yanase , Yasuhiro Suzuki , Daisuke Shirakawa
发明人： Takashi Okazoe , Kunio Watanabe , Shin Tatematsu , Koichi Yanase , Yasuhiro Suzuki , Daisuke Shirakawa
IPC分类号： C07C41/06 , C07C43/178 , C07C51/60 , C07C67/14 , C07C67/287 , C07C67/297 , C07C69/63
CPC分类号： C07C67/287 , C07C41/06 , C07C51/60 , C07C67/14 , C07C67/297 , C07C53/50 , C07C53/46 , C07C59/135 , C07C69/708 , C07C69/63 , C07C43/178
摘要： The present invention provides a method for producing industrially useful fluorine-containing compounds such as a fluorinated ester compound and an acid fluoride compound. Namely, the present invention resides in a method for producing a fluorinated ester compound, which comprises fluorinating an ester compound which is an ester of a compound having hydroxyl group(s) with a compound having acyl fluoride group(s) and which has a structure which can be fluorinated, in a liquid phase to produce a fluorinated ester compound, wherein the fluorination is carried out in the form of a liquid mixture of the ester compound and the compound having acyl fluoride group(s).
摘要翻译：本发明提供了一种制造工业上有用的含氟化合物如氟化酯化合物和酰氟化合物的方法。即，本发明涉及氟化酯化合物的制造方法，其特征在于，将具有羟基的化合物的酯化合物与具有酰氟基的化合物氟化，并且具有结构其可以在液相中被氟化以产生氟化酯化合物，其中氟化是以酯化合物和具有酰氟基团的化合物的液体混合物的形式进行的。

128. 发明授权

US06720628B2 Semiconductor device, memory system and electronic apparatus 有权
标题翻译：半导体器件，存储器系统和电子设备
公开(公告)号：US06720628B2
公开(公告)日：2004-04-13
申请号：US10072855
申请日：2002-02-06
申请人： Junichi Karasawa , Kunio Watanabe
发明人： Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L2976
CPC分类号： H01L27/11 , G11C11/412 , H01L27/1104
摘要： A semiconductor device is provided with a memory cell. The semiconductor device includes a first gate—gate electrode layer, a second gate—gate electrode layer, a first drain—drain wiring layer, a second drain—drain wiring layer, a first drain-gate wiring layer and second drain-gate wiring layers. The first drain-gate wiring layer and an upper layer and a lower layer of the second drain-gate wiring layer are located in different layers, respectively. The width of the first gate—gate electrode layer in the first load transistor is larger than the width of the first gate—gate electrode layer in the first driver transistor.
摘要翻译：半导体器件设置有存储单元。半导体器件包括第一栅极 - 栅极电极层，第二栅极 - 栅极电极层，第一漏极 - 漏极布线层，第二漏极 - 漏极布线层，第一漏极 - 栅极布线层和第二漏极 - 栅极布线层。第一漏极 - 栅极布线层和第二漏极 - 栅极布线层的上层和下层分别位于不同的层中。第一负载晶体管中的第一栅极 - 栅极电极层的宽度大于第一驱动晶体管中的第一栅极 - 栅极电极层的宽度。

129. 发明授权

US06673309B1 Sacrificial anode for cathodic protection and alloy therefor 失效
标题翻译：用于阴极保护的牺牲阳极及其合金
公开(公告)号：US06673309B1
公开(公告)日：2004-01-06
申请号：US08387158
申请日：1995-02-10
申请人： Kunio Watanabe , Shozo Takeya
发明人： Kunio Watanabe , Shozo Takeya
IPC分类号： C22C2110
CPC分类号： C22C21/10 , C23F13/14
摘要： An alloy for a sacrificial anode according to a first preferred aspect of the present invention includes about 10% to about 50% of Zn, about 0.03% to about 0.6% of In, and about 0.0005% to about 0.05% of Zr. The balance may be Al and any unavoidable impurities. An alloy according to a second preferred aspect of the present application includes about 10% to about 50% of Zn, about 0.03% to about 0.6% of In, and about 0.05% to about 0.3% of Si. The balance may be Al and any unavoidable impurities. An alloy according to a third preferred aspect of the present invention includes about 10% to about 50% of Zn, about 0.03% to about 0.6% of In, and about 0.02% to about 0.2% of Ce. The balance may be Al and any unavoidable impurities. An alloy according to a fourth preferred aspect of the present invention includes about 10% to about 50% of Zn, about 0.03% to about 0.6% of In, about 0.005% to about 0.1% of Ti, and about 0.001% to about 0.02% of B. The balance may be Al and any unavoidable impurities. An alloy according to another preferred aspect of the present invention includes about 10% to about 50% of Zn and about 0.03% to about 0.6% of In. The balance may be Al and any unavoidable impurities. The present invention also relates to a reinforced concrete structure comprising a cementitious material, metal reinforcement, and a sacrificial anode, the sacrificial anode including an alloy containing Al, Zn and In.
摘要翻译：根据本发明第一优选方面的用于牺牲阳极的合金包括约10％至约50％的Zn，约0.03％至约0.6％的In和约0.0005％至约0.05％的Zr。余量可以是Al和任何不可避免的杂质。根据本申请第二优选方面的合金包括约10％至约50％的Zn，约0.03％至约0.6％的In和约0.05％至约0.3％的Si。余量可以是Al和任何不可避免的杂质。根据本发明第三优选方面的合金包括约10％至约50％的Zn，约0.03％至约0.6％的In和约0.02％至约0.2％的Ce。余量可以是Al和任何不可避免的杂质。根据本发明第四优选方面的合金包括约10％至约50％的Zn，约0.03％至约0.6％的In，约0.005％至约0.1％的Ti和约0.001％至约0.02 余量可以是Al和任何不可避免的杂质。根据本发明另一优选方面的合金包括约10％至约50％的Zn和约0.03％至约0.6％的In。余量可以是Al和任何不可避免的杂质。本发明还涉及一种包括水泥质材料，金属加固件和牺牲阳极的钢筋混凝土结构，所述牺牲阳极包括含有Al，Zn和In的合金。

130. 发明授权

US06468850B2 Method of manufacturing a semiconductor memory device 失效
标题翻译：制造半导体存储器件的方法
公开(公告)号：US06468850B2
公开(公告)日：2002-10-22
申请号：US09907097
申请日：2001-07-16
申请人： Junichi Karasawa , Kunio Watanabe , Takashi Kumagai
发明人： Junichi Karasawa , Kunio Watanabe , Takashi Kumagai
IPC分类号： H01L218238
CPC分类号： H01L27/105 , H01L27/1052
摘要： A semiconductor device has a semiconductor substrate having a peripheral circuit area and a memory cell area. A border region having a well of a first conductivity is formed between the peripheral circuit area and the memory cell area. A well of a second conductivity is formed in the peripheral circuit area. The well in the peripheral circuit area is in contact with the border region but not in contact with the memory cell area. Dummy transistors are formed in the border region. The dummy transistors are arranged with substantially the same transistor forming density as that of the memory cell area.
摘要翻译：半导体器件具有具有外围电路区域和存储单元区域的半导体衬底。在外围电路区域和存储单元区域之间形成具有第一导电性阱的边界区域。在外围电路区域形成第二导电性阱。外围电路区域中的阱与边界区域接触，但不与存储单元区域接触。在边界区域形成虚拟晶体管。虚拟晶体管被布置成与存储单元区域基本上相同的晶体管形成密度。

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