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121. 发明授权

US06683327B2 Nucleation layer for improved light extraction from light emitting devices 有权
标题翻译：用于改善发光器件的光提取的成核层
公开(公告)号：US06683327B2
公开(公告)日：2004-01-27
申请号：US09993862
申请日：2001-11-13
申请人： Michael R. Krames , Tetsuya Takeuchi , Junko Kobayashi
发明人： Michael R. Krames , Tetsuya Takeuchi , Junko Kobayashi
IPC分类号： H01L29227
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075
摘要： A light emitting device including a nucleation layer containing aluminum is disclosed. The thickness and aluminum composition of the nucleation layer are selected to match the index of refraction of the substrate and device layers, such that 90% of light from the device layers incident on the nucleation layer is extracted into the substrate. In some embodiments, the nucleation layer is AlGaN with a thickness between about 1000 and about 1200 angstroms and an aluminum composition between about 2% and about 8%. In some embodiments, the nucleation layer is formed over a surface of a wurtzite substrate that is miscut from the c-plane of the substrate. In some embodiments, the nucleation layer is formed at high temperature, for example between 900° and 1200° C. In some embodiments, the nucleation layer is doped with Si to a concentration between about 3e18 cm−3 and about 5e19 cm−3.
摘要翻译：公开了一种包含含有铝的成核层的发光器件。选择成核层的厚度和铝组成以匹配衬底和器件层的折射率，使得入射到成核层的器件层的90％的光被提取到衬底中。在一些实施方案中，成核层是AlGaN，其厚度为约1000至约1200埃，铝组合物为约2％至约8％。在一些实施方案中，成核层形成在纤维素基质的与基底的c面杂交的表面上。在一些实施方案中，成核层在高温下形成，例如在900℃至1200℃之间。在一些实施方案中，成核层掺杂Si至约3埃18厘米-3至约5埃19厘米3的浓度， -3>。

122. 发明授权

US06521914B2 III-Nitride Light-emitting device with increased light generating capability 有权
标题翻译： III型氮化物具有增加的发光能力的发光装置
公开(公告)号：US06521914B2
公开(公告)日：2003-02-18
申请号：US10112175
申请日：2002-03-29
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L29267
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译：本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。可以使用底座来提供LED管芯和封装之间的电连接和热连接。底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。最后，器件可以包括高折射率（n> 1.8）的覆盖层。

123. 发明授权

US06323063B2 Forming LED having angled sides for increased side light extraction 有权
标题翻译：成型LED具有成角度的侧面，用于增加侧光提取
公开(公告)号：US06323063B2
公开(公告)日：2001-11-27
申请号：US09732459
申请日：2000-12-06
申请人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
发明人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
IPC分类号： H01L2100
CPC分类号： H01L33/20 , H01L33/02
摘要： The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
摘要翻译：本发明是一种用于设计半导体发光器件的方法，使得侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以改善光提取提高总光输出效率。选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

124. 发明授权

US06320206B1 Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：具有晶片结合的铝镓铟氮化物结构和反射镜叠层的发光器件
公开(公告)号：US06320206B1
公开(公告)日：2001-11-20
申请号：US09245435
申请日：1999-02-05
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H01L3300
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

125. 发明申请

US20170213937A1 POWER LIGHT EMITTING DIODE AND METHOD WITH UNIFORM CURRENT DENSITY OPERATION 有权
公开(公告)号：US20170213937A1
公开(公告)日：2017-07-27
申请号：US15426662
申请日：2017-02-07
申请人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J.F. David
发明人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J.F. David
IPC分类号： H01L33/20 , H05B33/08 , H01L33/00 , H01L33/16 , H01L33/32
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
摘要： A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

126. 发明授权

US09000450B2 Grown photonic crystals in semiconductor light emitting devices 有权
标题翻译：半导体发光器件中的生长光子晶体
公开(公告)号：US09000450B2
公开(公告)日：2015-04-07
申请号：US13404369
申请日：2012-02-24
申请人： Jonathan J. Wierer, Jr. , Michael R. Krames , Nathan F. Gardner
发明人： Jonathan J. Wierer, Jr. , Michael R. Krames , Nathan F. Gardner
IPC分类号： H01L27/15 , C30B29/60 , B82Y20/00 , G02B6/122 , H01L33/24 , H01L33/08 , H01S5/10 , H01S5/343
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译：光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。

127. 发明授权

US08847252B2 III-nitride light emitting device with double heterostructure light emitting region 有权
标题翻译：具有双异质结构发光区域的III族氮化物发光器件
公开(公告)号：US08847252B2
公开(公告)日：2014-09-30
申请号：US12495464
申请日：2009-06-30
申请人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
发明人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/32 , H01L33/04 , H01L33/06
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。

128. 发明授权

US08679869B2 Contact for a semiconductor light emitting device 有权
标题翻译：接触半导体发光器件
公开(公告)号：US08679869B2
公开(公告)日：2014-03-25
申请号：US13423625
申请日：2012-03-19
申请人： Rafael I. Aldaz , John E. Epler , Patrick N. Grillot , Michael R. Krames
发明人： Rafael I. Aldaz , John E. Epler , Patrick N. Grillot , Michael R. Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.
摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。半导体结构通过触点连接到安装座。从半导体结构去除生长衬底，并且省略厚的透明衬底，使得器件中的半导体层的总厚度小于15μm，在一些实施例中为一些实施例，小于10μm。半导体结构的顶侧可以是纹理的。

129. 发明授权

US08628985B2 Light emitting devices with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的发光器件
公开(公告)号：US08628985B2
公开(公告)日：2014-01-14
申请号：US13252398
申请日：2011-10-04
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到具有由有源区发射的光的折射率的透明透镜，优选大于约1.5，更优选大于约1.8。将透明透镜粘合到具有包括有源区的半导体层的层叠的发光器件的方法包括提高透镜和叠层的温度并施加压力以将透镜和叠层压在一起。将高折射率透镜粘合到发光器件通过减少由于全内反射引起的损耗来提高发光器件的光提取效率。有利地，可以在不使用密封剂的情况下实现这种改进。

130. 发明授权

US08502465B2 Power light emitting diode and method with current density operation 有权
标题翻译：电力发光二极管和电流密度运算方法
公开(公告)号：US08502465B2
公开(公告)日：2013-08-06
申请号：US12936238
申请日：2010-09-20
申请人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames
发明人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames
IPC分类号： H05B37/02 , H01L29/22
CPC分类号： H05B37/02 , H01L33/16 , H01L33/32 , H01L33/405 , H01L2224/16 , H01L2224/48
摘要： A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
摘要翻译：发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。

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