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121. 发明授权

US07488435B2 Copper(I) complexes and processes for deposition of copper films by atomic layer deposition 失效
标题翻译：铜（I）复合物和通过原子层沉积沉积铜膜的方法
公开(公告)号：US07488435B2
公开(公告)日：2009-02-10
申请号：US11500569
申请日：2006-08-07
申请人： Kyung-Ho Park
发明人： Kyung-Ho Park
IPC分类号： H01B1/06 , B05D5/12 , C23C16/18 , C23C16/455 , C07F1/08
CPC分类号： C23C16/18 , C23C16/45553 , Y10T428/31504
摘要： The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.
摘要翻译：本发明涉及新颖的1,3-二亚胺铜络合物和1,3-二亚胺铜络合物在原子层沉积方法中沉积在基底上或在多孔固体中或其上的铜沉积的用途。

122. 发明申请

US20080063882A1 VOLATILE COPPER(1) COMPLEXES AND PROCESSES FOR DEPOSITION OF COPPER FILMS BY ATOMIC LAYER DEPOSITION 失效
标题翻译：挥发性铜（1）通过原子层沉积沉积铜膜的复合物和工艺
公开(公告)号：US20080063882A1
公开(公告)日：2008-03-13
申请号：US11858431
申请日：2007-09-20
申请人： Alexander Bradley , Jeffery Thompson , Kyung-Ho Park
发明人： Alexander Bradley , Jeffery Thompson , Kyung-Ho Park
IPC分类号： B32B15/04 , B05D3/10 , C07F1/08 , C07F7/10
CPC分类号： C23C18/40 , C07F1/005 , C07F1/08 , C07F7/0803 , Y10T428/31678
摘要： Provided are novel 1,3-diimine copper complexes, and processes for using 1,3-diimine copper complexes in the deposition of copper on substrates, or in or on porous solids, by atomic layer deposition.
摘要翻译：提供新的1,3-二亚胺铜络合物，以及在沉积基底上或在多孔固体中或其上的原子层沉积中使用1,3-二亚胺铜络合物的方法。

123. 发明申请

US20080044687A1 Copper (II) Complexes for Deposition of Copper Films by Atomic Layer Deposition 失效
标题翻译：用于通过原子层沉积沉积铜膜的铜（II）配合物
公开(公告)号：US20080044687A1
公开(公告)日：2008-02-21
申请号：US11658369
申请日：2005-07-29
申请人： Alexander Zak Bradley , Jeffery Scott Thompson , Kyung-Ho Park
发明人： Alexander Zak Bradley , Jeffery Scott Thompson , Kyung-Ho Park
IPC分类号： C07F1/08 , B32B9/04 , C23C16/00 , C07C211/22
CPC分类号： C23C16/18 , C07D207/20 , C07D401/06 , C23C16/45553 , H01L21/28562
摘要： The present invention relates to novel 1,3-diimines and 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an atomic layer deposition process.
摘要翻译：本发明涉及新颖的1,3-二亚胺和1,3-二亚胺铜配合物以及1,3-二亚胺铜配合物在原子层沉积工艺中沉积在基底上或在多孔固体中或其上的铜沉积的用途。

124. 发明申请

US20070191638A1 Processes for the synthesis of N,N'-substituted 1,3-diketimines 审中-公开
标题翻译：用于合成N，N'-取代的1,3-二酮亚胺的方法
公开(公告)号：US20070191638A1
公开(公告)日：2007-08-16
申请号：US11351151
申请日：2006-02-10
申请人： Kyung-Ho Park
发明人： Kyung-Ho Park
IPC分类号： C07C249/02
CPC分类号： C07C249/02 , C07D207/20 , C07D211/70 , C07C251/08
摘要： Processes for the synthesis of N,N′-substituted 1,3-diketimines (III) from the reaction of aliphatic ketimines with iminothioethers in the presence of base are provided. The processes are particularly useful for making aliphatic N,N′-unsymmetrically substituted 1,3-diketimines.
摘要翻译：提供了在碱存在下从脂族酮亚胺与亚氨基硫醚的反应合成N，N'-取代的1,3-二酮亚胺（III）的方法。该方法特别适用于制备脂族N，N'-不对称取代的1,3-二酮亚胺。

125. 发明申请

US20060255917A1 System for protecting tag related information and method thereof 审中-公开
标题翻译：用于保护标签相关信息的系统及其方法
公开(公告)号：US20060255917A1
公开(公告)日：2006-11-16
申请号：US11431041
申请日：2006-05-10
申请人： Kyung-ho Park , Woo-shik Kang , Hyung-min Yoon
发明人： Kyung-ho Park , Woo-shik Kang , Hyung-min Yoon
IPC分类号： H04Q5/22
CPC分类号： G06K7/0008
摘要： A system for protecting signal emitting tag related information and a method thereof are provided. The method of protecting the signal emitting tag related information includes operations of receiving a request for the signal emitting tag related information, which is information related to a the signal emitting tag, and providing the requested signal emitting tag related information after authenticating the request. Therefore, a non-permitted user can be prevented from reading the signal emitting tag related information so that the signal emitting tag related information can be protected.
摘要翻译：提供了一种用于保护信号发射标签相关信息的系统及其方法。保护信号发布标签相关信息的方法包括接收对与信号发射标签相关的信息的信号发布标签相关信息的请求的操作，以及在认证请求之后提供所请求的发送标签相关信息的信号。因此，可以防止非允许用户读取信号发布标签相关信息，从而可以保护信号发布标签相关信息。

126. 发明授权

US07126266B2 Field emission assisted microdischarge devices 有权
标题翻译：场放电辅助微放电器件
公开(公告)号：US07126266B2
公开(公告)日：2006-10-24
申请号：US10891417
申请日：2004-07-14
申请人： Sung-Jin Park , J. Gary Eden , Kyung-Ho Park
发明人： Sung-Jin Park , J. Gary Eden , Kyung-Ho Park
IPC分类号： H01J1/62
CPC分类号： H01J1/025 , B82Y10/00 , H01J3/025 , H01J17/066 , H01J63/02 , H01J2201/30469 , H01J2217/49
摘要： Field emission nanostructures assist operation of a microdischarge device. The field emission nanostructures are integrated into the microdischarge device(s) or are situated near an electrode of the microdischarge device(s). The field emission nanostructures reduce operating and ignition voltages compared to otherwise identical devices lacking the field emission nanostructures, while also increasing the radiative output of the microdischarge device(s).
摘要翻译：场发射纳米结构有助于微放电器件的工作。场发射纳米结构集成到微放电器件中或位于微放电器件的电极附近。与其他相同的缺少场发射纳米结构的器件相比，场致发射纳米结构降低了操作和点火电压，同时也增加了微放电器件的辐射输出。

127. 发明申请

US20060202803A1 Portable device for caching RFID tag and method thereof 有权
标题翻译：用于缓存RFID标签的便携式设备及其方法
公开(公告)号：US20060202803A1
公开(公告)日：2006-09-14
申请号：US11374186
申请日：2006-03-14
申请人： Hyung-min Yoon , Kyung-ho Park , Woo-shik Kang
发明人： Hyung-min Yoon , Kyung-ho Park , Woo-shik Kang
IPC分类号： H04Q5/22
CPC分类号： G06K7/0008
摘要： A portable device includes an RFID reader for detecting a tag information of an RFID tag, a memory for storing the tag information detected by the RFID reader, and a controller. When a read command for the RFID tag is input and the tag information is valid, the controller controls the RFID reader to retrieve the tag information of the memory. If the tag information is invalid, the controller controls the RFID reader to re-read the RFID tag. The controller can determine whether the tag information is valid using the time and location. Because unnecessary operation can be omitted to read tags, power consumption is reduced and tag information check time is shortened.
摘要翻译：便携式设备包括用于检测RFID标签的标签信息的RFID读取器，用于存储由RFID读取器检测到的标签信息的存储器和控制器。当输入RFID标签的读取命令并且标签信息有效时，控制器控制RFID读取器来检索存储器的标签信息。如果标签信息无效，则控制器控制RFID读取器重新读取RFID标签。控制器可以使用时间和位置确定标签信息是否有效。由于读取标签可以省略不必要的操作，因此功耗降低，标签信息检查时间缩短。

128. 发明申请

US20060099343A1 Method of copper deposition from a supercritical fluid solution containing copper (I) complexes with monoanionic bidentate and neutral monodentate ligands 失效
标题翻译：含有铜（I）配合物与单阴离子二齿和中性单齿配体的超临界流体溶液的铜沉积方法
公开(公告)号：US20060099343A1
公开(公告)日：2006-05-11
申请号：US11215256
申请日：2005-08-30
申请人： Jeffery Thompson , Alexander Bradley , Kyung-Ho Park
发明人： Jeffery Thompson , Alexander Bradley , Kyung-Ho Park
IPC分类号： C23C16/00
CPC分类号： H01L21/288 , C07F1/005 , C07F1/08 , C23C18/00 , C23C18/08 , Y02P20/544
摘要： Methods of depositing a copper film onto the surface of a substrate from a supercritical solution containing copper-containing precursors having monoanionic bidentate and neutral monodentate ligands, which comprise contacting the substrate with the solution; heating the substrate to a temperature between about 60° C. and less than 150° C.; and forming a copper-containing film on at least a portion of the substrate surface. Also provided are copper-containing precursor compositions used therein.
摘要翻译：从含有含有单阴离子二齿和中性单齿配体的含铜前体的超临界溶液沉积到衬底的表面上的方法，该方法包括使该衬底与该溶液接触; 将基底加热至约60℃至小于150℃的温度; 以及在所述基板表面的至少一部分上形成含铜膜。还提供了其中使用的含铜前体组合物。

129. 发明授权

US06238774B1 Protection of oxide superconductor 失效
标题翻译：保护氧化物超导体
公开(公告)号：US06238774B1
公开(公告)日：2001-05-29
申请号：US08261246
申请日：1994-06-14
申请人： Kyung-ho Park , Nagisa Ohsako
发明人： Kyung-ho Park , Nagisa Ohsako
IPC分类号： B32B2714
CPC分类号： C04B41/009 , C04B41/5011 , C04B41/5055 , C04B41/52 , C04B41/85 , C04B41/87 , C04B41/89 , H01L39/247 , Y10S428/93 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926 , C04B41/5074 , C04B41/522 , C04B35/03 , C04B35/45
摘要： A high temperature oxide superconductor is efficiently protected from the affects of water and acids by forming a passivation layer of a fluoride. The fluoride layer comprises a fluoride composed of one or more elements composing the oxide superconductor and/or one or more elements that can compose an oxide superconductor by replacing at least in part one or more elements composing the oxide superconductor.
摘要翻译：通过形成氟化物的钝化层，可以有效地保护高温氧化物超导体免受水和酸的影响。氟化物层包括由构成氧化物超导体的一种或多种元素组成的氟化物和/或可以通过至少部分地替换构成氧化物超导体的一种或多种元素来构成氧化物超导体的一种或多种元素。

130. 发明授权

US5811851A Pre-oxidizing high-dielectric-constant material electrodes 失效
公开(公告)号：US5811851A
公开(公告)日：1998-09-22
申请号：US661501
申请日：1996-06-11
申请人： Yasushiro Nishioka , Scott R. Summerfelt , Kyung-ho Park , Pijush Bhattacharya
发明人： Yasushiro Nishioka , Scott R. Summerfelt , Kyung-ho Park , Pijush Bhattacharya
IPC分类号： H01L21/02 , H01L31/062 , H01L23/48 , H01L27/108 , H01L29/12
CPC分类号： H01L28/60 , H01L28/55 , H01L28/75 , Y10S257/915
摘要： Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO.sub.2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.

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