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111. 发明授权

US07298640B2 1T1R resistive memory array with chained structure 有权
标题翻译： 1T1R电阻式存储器阵列，具有链式结构
公开(公告)号：US07298640B2
公开(公告)日：2007-11-20
申请号：US11121145
申请日：2005-05-03
申请人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/75 , G11C2213/79 , H01L27/24
摘要： A 1T1R resistive memory array comprised of chains of memory cells, where each memory cell is composed of a resistive element in parallel with a switch. Such chains of memory cells are non-volatile and provide for each of the memory cells to be randomly accessed.
摘要翻译：由存储单元链组成的1T1R电阻式存储器阵列，其中每个存储单元由与开关并联的电阻元件组成。存储器单元的这种链是非易失性的并且为每个存储器单元提供随机访问。

112. 发明授权

US07038206B2 Infrared sensor and imager with differential ferroelectric cells 有权
标题翻译：红外传感器和具有差分铁电单元的成像器
公开(公告)号：US07038206B2
公开(公告)日：2006-05-02
申请号：US10960876
申请日：2004-10-06
申请人： Zheng Chen , Carlos A. Paz de Araujo , Jolanta Celinska , Larry D. McMillan
发明人： Zheng Chen , Carlos A. Paz de Araujo , Jolanta Celinska , Larry D. McMillan
IPC分类号： G01J5/02
CPC分类号： G01J5/34
摘要： A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.
摘要翻译：高温计单元包括第一铁电电容器，第二铁电电容器和用于确定第一和第二铁电电容器之间的极化电荷，电压或电流之间的差的差分电路。电池被脉冲多次，并且连接到差分电路的积分器电路提供表示积分差的增强的输出信号。红外成像器由高温计单元的阵列形成，每个单元中的一个铁电电容器暴露于红外源，而另一个铁电电容器不暴露于红外源。

113. 发明授权

US06787181B2 Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth 失效
标题翻译：使用三甲基铋制备层状超晶格材料的化学气相沉积方法
公开(公告)号：US06787181B2
公开(公告)日：2004-09-07
申请号：US10007119
申请日：2001-10-26
申请人： Kiyoshi Uchiyama , Narayan Solayappan , Carlos A. Paz de Araujo
发明人： Kiyoshi Uchiyama , Narayan Solayappan , Carlos A. Paz de Araujo
IPC分类号： B05D512
CPC分类号： H01L21/02205 , C23C16/40 , C30B25/02 , C30B29/02 , C30B29/68 , H01L21/02194 , H01L21/02197 , H01L21/02271 , H01L21/31691 , H01L28/55
摘要： A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650° C. or higher are used.
摘要翻译：使用溶解在有机溶剂中的三甲基铋前体溶液和金属化合物的化学气相沉积在基板上形成双层超晶格材料的方法。在通过化学气相沉积将前体溶液沉积在集成电路基板上之前，先前溶液被加热和蒸发。不使用包括650℃或更高的温度的加热步骤。

114. 发明授权

US06706585B2 Chemical vapor deposition process for fabricating layered superlattice materials 有权
标题翻译：用于制造层状超晶格材料的化学气相沉积工艺
公开(公告)号：US06706585B2
公开(公告)日：2004-03-16
申请号：US10405309
申请日：2003-04-02
申请人： Kiyoshi Uchiyama , Narayan Solayappan , Carlos A. Paz de Araujo
发明人： Kiyoshi Uchiyama , Narayan Solayappan , Carlos A. Paz de Araujo
IPC分类号： H01L218242
CPC分类号： C23C16/45561 , C23C16/0272 , C23C16/40 , C23C16/44 , Y10S438/935 , Y10S438/938
摘要： A first reactant gas is flowed into a CVD reaction chamber containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first precursor compounds, and the first precursor compound or compounds decompose in the CVD reaction chamber to deposit a coating containing metal atoms on the heated integrated circuit substrate. The coating is treated by RTP. Thereafter, a second reactant gas is flowed into a CVD reaction chamber containing the heated substrate. The second reactant gas contains a second precursor compound or a plurality of second precursor compounds, which decompose in the CVD reaction chamber to deposit more metal atoms on the substrate. Heat for reaction and crystallization of the deposited metal atoms to form a thin film of layered superlattice material is provided by heating the substrate during CVD deposition, as well as by selected rapid thermal processing (“RTP”) and furnace annealing steps.
摘要翻译：第一反应气体流入含有加热集成电路基板的CVD反应室。第一反应气体含有第一前体化合物或多个第一前体化合物，第一前体化合物或化合物在CVD反应室中分解，以在被加热的集成电路衬底上沉积含有金属原子的涂层。涂层用RTP处理。此后，将第二反应气体流入含有加热衬底的CVD反应室。第二反应气体含有第二前体化合物或多个第二前体化合物，其在CVD反应室中分解以在基底上沉积更多的金属原子。通过在CVD沉积期间以及通过选择的快速热处理（“RTP”）和炉退火步骤加热衬底来提供沉积的金属原子以形成层状超晶格材料的薄膜的反应和结晶的热。

115. 发明授权

US06660536B2 Method of making ferroelectric material utilizing anneal in an electrical field 失效
标题翻译：在电场中利用退火制造铁电材料的方法
公开(公告)号：US06660536B2
公开(公告)日：2003-12-09
申请号：US10080383
申请日：2002-02-21
申请人： Kiyoshi Uchiyama , Carlos A. Paz de Araujo
发明人： Kiyoshi Uchiyama , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L27/10852 , H01L21/02197 , H01L21/3105 , H01L27/10808 , H01L28/55
摘要： A ferroelectric thin film precursor material is annealed while in an electric field. The electric field is maintained as the material cools. A partially completed integrated circuit with a ferroelectric thin film precursor material may be placed between two electrodes in an annealing apparatus and voltage sufficient to polarize the ferroelectric thin film material in the direction of the electrical field is supplied to the electrodes during the anneal and as the film cools. Alternatively, probes are connected to the electrodes of a partially completed integrated circuit device and voltage sufficient to polarize the ferroelectric material is applied while annealing the material and as it cools. The anneal may be a furnace anneal or an RTP anneal.
摘要翻译：铁电薄膜前体材料在电场中退火。当材料冷却时，保持电场。具有铁电薄膜前体材料的部分完成的集成电路可以在退火装置中放置在两个电极之间，并且在退火期间将足以使铁电薄膜材料沿电场方向偏振的电压供应到电极，并且作为电影冷却或者，探针连接到部分完成的集成电路器件的电极，并且在退火材料并且在其冷却时施加足以极化铁电材料的电压。退火可以是炉退火或RTP退火。

116. 发明授权

US06447838B1 Integrated circuit capacitors with barrier layer and process for making the same 失效
标题翻译：具有阻挡层的集成电路电容器及其制造方法
公开(公告)号：US06447838B1
公开(公告)日：2002-09-10
申请号：US08543827
申请日：1995-10-16
申请人： Masamichi Azuma , Eiji Fujii , Yasuhiro Uemoto , Shinichiro Hayashi , Toru Nasu , Yoshihiro Shimada , Akihiro Matsuda , Tatsuo Otsuki , Michael C. Scott , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Masamichi Azuma , Eiji Fujii , Yasuhiro Uemoto , Shinichiro Hayashi , Toru Nasu , Yoshihiro Shimada , Akihiro Matsuda , Tatsuo Otsuki , Michael C. Scott , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： B05D512
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55 , H01L28/65 , Y10T29/42
摘要： A Ti/TiN adhesion/barrier layer is formed on a substrate and annealed. The anneal step is performed at a temperature within a good morphology range of 100° C. above a base barrier anneal temperature that depends on the thickness of said barrier layer. The base barrier anneal temperature is about 700° C. for a barrier thickness of about 1000 Å and about 800° C. for a barrier thickness of about 3000 Å. The barrier layer is 800 Å thick or thicker. A first electrode is formed, followed by a BST dielectric layer and a second electrode. A bottom electrode structure in which a barrier layer of TiN is sandwiched between two layers of platinum is also disclosed. The process and structures also produce good results with other capacitor dielectrics, including ferroelectrics such as strontium bismuth tantalate.
摘要翻译：在基板上形成Ti / TiN粘合/阻挡层并退火。退火步骤在取决于所述阻挡层的厚度的基本阻挡退火温度之上的100℃的良好形态范围内进行。对于约3000的屏障厚度，对于约1000和约800℃的阻挡层厚度，基底阻挡退火温度为约700℃。阻挡层厚度为800或更厚。形成第一电极，随后是BST介电层和第二电极。还公开了其中TiN阻挡层夹在两层铂之间的底部电极结构。该工艺和结构也与其他电容器电介质（包括铁电锶钽酸锶）等产生良好的结果。

117. 发明授权

US06376691B1 Metal organic precursors for transparent metal oxide thin films and method of making same 失效
标题翻译：透明金属氧化物薄膜的金属有机前体及其制备方法
公开(公告)号：US06376691B1
公开(公告)日：2002-04-23
申请号：US09388044
申请日：1999-09-01
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan
IPC分类号： C07F1900
CPC分类号： C07C53/126
摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.
摘要翻译：用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。在一个实施例中，液体前体用于制造导电薄膜。在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。含有多种金属的液体前体具有更长的保质期。向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

118. 发明授权

US06285048B1 Barium strontium titanate integrated circuit capacitors and process for making the same 失效
标题翻译：钛酸钡锶集成电路电容器及其制造方法
公开(公告)号：US06285048B1
公开(公告)日：2001-09-04
申请号：US08165082
申请日：1993-12-10
申请人： Masamichi Azuma , Michael C. Scott , Carlos A. Paz de Araujo , Joseph D. Cuchiaro
发明人： Masamichi Azuma , Michael C. Scott , Carlos A. Paz de Araujo , Joseph D. Cuchiaro
IPC分类号： H01L31072
CPC分类号： C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/14 , C30B7/00 , C30B29/68 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 2000 Å. Typical gain sizes are 40 nanometers and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and an xylene exchange is preformed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 675° C. and 850° C.
摘要翻译：集成电路电容器，其中电容器电介质是具有小于2000埃的晶粒尺寸的BST薄膜。典型的增益尺寸为40纳米以下。 BST通过旋涂工艺沉积液体前体而形成。原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前预先形成二甲苯交换。前体在空气中在约400℃的温度下干燥，然后在675℃至850℃的温度下在氧气中进行炉退火。

119. 发明授权

US06281534B1 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06281534B1
公开(公告)日：2001-08-28
申请号：US09170417
申请日：1998-10-13
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

120. 发明授权

US06258733B1 Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size 失效
标题翻译：具有减少雾粒度的薄膜雾化液体沉积的方法和装置
公开(公告)号：US06258733B1
公开(公告)日：2001-07-10
申请号：US09620751
申请日：2000-07-21
申请人： Narayan Solayappan , Robert W. Grant , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Narayan Solayappan , Robert W. Grant , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： A01L2131
CPC分类号： C23C18/12 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C16/45565 , C23C18/1216 , H01L21/31691 , H01L28/55
摘要： A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominantly negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.
摘要翻译：质量流量控制器控制前体到雾发生器的输送。使用文丘里管雾化前体，其中氧气和氮气的组合由电晕丝充电并且通过前体填充的喉部。使用粒子惯性分离器精制雾，使其主要包含负离子，进入减速室，然后通过入口板中的入口板流入沉积室，该入口板是室和室之间的隔板接地电极。入口板位于要沉积雾的基底的平面上方并且基本上平行。基板被充电至约5000伏特的电压。在基板正上方的入口板的39平方英寸进口端口区域中每平方英寸有440个入口端口。入口面积大致等于衬底面积。排气口围绕平行于和低于衬底平面的排气平面的周边限定通道。

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