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111. 发明申请

US20080118221A1 INFORMATION RECORDING APPARATUS 失效
标题翻译：信息记录装置
公开(公告)号：US20080118221A1
公开(公告)日：2008-05-22
申请号：US12026983
申请日：2008-02-06
申请人： Keiji Sato
发明人： Keiji Sato
IPC分类号： H04N5/783
CPC分类号： G11B31/006 , G11B7/00 , H04N5/765 , H04N5/772 , H04N5/775 , H04N5/781 , H04N5/782
摘要： An information recording apparatus has a stop mode in which only recording means comprised of a rotatable drum on which a recording head is mounted and recording medium driving means comprised of a capstan/pinch roller are stopped, which stop mode can be changed from a record temporary stop mode. During the stop mode of the recording means and the recording medium driving means, a video signal photo-taken by a camera of the information recording apparatus can be outputted externally, and, change to the stop mode is made effective by a combination of user's selection and/or presence/absence of an external connection device.
摘要翻译：信息记录装置具有停止模式，其中仅停止由其上安装有记录头的可旋转滚筒和由绞盘/夹送辊组成的记录介质驱动装置的记录装置，该停止模式可以从记录临时停止模式。在记录装置和记录介质驱动装置的停止模式期间，由信息记录装置的照相机拍摄的视频信号可以从外部输出，并且通过用户选择的组合使切换到停止模式成为有效和/或外部连接装置的存在/不存在。

112. 发明授权

US07226822B2 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 有权
标题翻译：配线材料，使用布线材料配线的半导体装置及其制造方法
公开(公告)号：US07226822B2
公开(公告)日：2007-06-05
申请号：US10672521
申请日：2003-09-26
申请人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
发明人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： C23C14/185 , G02F2001/136295 , H01L21/2855 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.03 ppm, preferably equal to or less than 0.01 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
摘要翻译：通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定溅射气体压力为1.0Pa至3.0Pa，膜的膜应力由-1×10 10 / cm 2至1×10 10 / > dyn / cm 2。通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.03ppm，优选等于或小于0.01ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

113. 发明授权

US06940562B2 Controller for remotely controlling two or more controlled devices 有权
标题翻译：用于远程控制两个或多个受控设备的控制器
公开(公告)号：US06940562B2
公开(公告)日：2005-09-06
申请号：US09836475
申请日：2001-04-18
申请人： Keiji Sato
发明人： Keiji Sato
IPC分类号： H04N5/44 , H04N5/445 , H04N5/765 , H04N5/77 , H04N5/775 , H04N5/232
CPC分类号： H04N5/4403 , H04N5/4401 , H04N5/44582 , H04N5/765 , H04N5/77 , H04N5/772 , H04N5/775 , H04N21/42204 , H04N21/4223 , H04N21/43632 , H04N2005/4435
摘要： The present invention provides for controlling a controlled apparatus, which is controlled by a remote control signal. The remote control signal transmitted from a remote control apparatus is received, and the controlled apparatus or a second controlled apparatus is selected according to the remote control signal. A control command corresponding to the remote control signal is transmitted to the second controlled apparatus, if the second controlled apparatus is selected. An operating state of the second controlled apparatus is checked before the control command is transmitted to the second controlled apparatus. The controlled apparatus is controlled according to the remote control signal, if the controlled apparatus is selected.
摘要翻译：本发明提供一种由遥控信号控制的受控装置的控制。接收从远程控制装置发送的遥控信号，根据遥控信号选择受控装置或第二受控装置。如果选择第二受控装置，则将与遥控信号相对应的控制命令发送到第二受控装置。在将控制命令发送到第二受控装置之前，检查第二受控装置的操作状态。如果选择受控设备，则根据遥控信号控制受控设备。

114. 发明授权

US06938191B2 Access control device and testing method 失效
标题翻译：访问控制装置和测试方法
公开(公告)号：US06938191B2
公开(公告)日：2005-08-30
申请号：US10103787
申请日：2002-03-25
申请人： Keiji Sato , Toshiro Nakazuru , Shigeaki Okutani , Noboru Morita
发明人： Keiji Sato , Toshiro Nakazuru , Shigeaki Okutani , Noboru Morita
IPC分类号： G01R31/28 , G01R31/3185 , G06F11/00 , G06F11/22
CPC分类号： G01R31/318555 , G01R31/318572
摘要： The present invention provides an access control device and a testing method that can simplify the software operations in an access control operation such as a JTAG control operation, and enable the hardware to perform a high-speed control operation. The access control device conducts a test or diagnosis on an object by accessing a serial interface based on a command and data that specify a testing or diagnosing route. Under the control of a processor, a control circuit in the access control device executes an access sequence in accordance with a command string and an input data string stored in a memory, and stores the data outputted from the object to be tested or diagnosed in the memory as an output data string. The control circuit sets a state transition route for each objective state in advance, so that a transition route can be readily determined for an objective state specified by the command string.
摘要翻译：本发明提供一种访问控制装置和测试方法，其可以简化诸如JTAG控制操作之类的访问控制操作中的软件操作，并且使硬件能够执行高速控制操作。访问控制设备通过基于指定测试或诊断路由的命令和数据访问串行接口来对对象进行测试或诊断。在处理器的控制下，访问控制装置中的控制电路根据存储在存储器中的命令串和输入数据串执行访问序列，并将从被测试对象或被诊断的对象输出的数据存储在内存作为输出数据串。控制电路预先为每个目标状态设置状态转移路径，使得可以容易地确定由命令串指定的目标状态的转换路线。

115. 发明申请

US20050093432A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050093432A1
公开(公告)日：2005-05-05
申请号：US10937904
申请日：2004-09-10
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/10 , H05B33/26 , H05B33/28
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
摘要翻译：根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极层如ITO。此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

116. 发明授权

US06661096B1 Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 有权
标题翻译：使用布线材料配线的布线材料半导体器件及其制造方法
公开(公告)号：US06661096B1
公开(公告)日：2003-12-09
申请号：US09604997
申请日：2000-11-21
申请人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
发明人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
IPC分类号： H01L2940
CPC分类号： C23C14/185 , G02F2001/136295 , H01L21/2855 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.03 ppm, preferably equal to or less than 0.01 ppm, and having a low electrical resistivity (equal to or less than 40 &mgr;&OHgr;·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
摘要翻译：通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定溅射气体压力为1.0Pa至3.0Pa，膜的膜应力由-1×10 10 dyn / cm 2至1×10 10 dyn / cm 2制成。通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.03ppm，优选等于或小于0.01ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

117. 发明授权

US06228182B1 Method and low iron loss grain-oriented electromagnetic steel sheet 失效
标题翻译：方法和低铁损晶粒取向电磁钢板
公开(公告)号：US06228182B1
公开(公告)日：2001-05-08
申请号：US08365313
申请日：1994-12-28
申请人： Koh Nakano , Atsuhito Honda , Keiji Sato
发明人： Koh Nakano , Atsuhito Honda , Keiji Sato
IPC分类号： C21D946
CPC分类号： H01F1/14783 , C21D8/1294 , C23C26/00
摘要： A method and a low iron loss grain-oriented electromagnetic steel sheet are disclosed. The method comprises the steps of: hot-rolling a grain-oriented electromagnetic steel sheet; cold-rolling the hot-rolled steel sheet once or twice intervened by intermediate annealing, so as to achieve the sheet thickness of a final product; annealing the cold-rolled steel sheet for decarburization; finish-annealing the decarburized steel sheet; forming linear grooves on the steel sheet substantially perpendicularly to the rolling direction, after the final cold-rolling step and before the finish-annealing step, by, for example, electrolytic etching or acid dipping; and filling the linear grooves with an element selected from the group consisting of Sn, B and Sb, or an oxide or a sulfate of an element selected therefrom. Preferably, each of the linear grooves has a width of 30-300 &mgr;m and a depth of 5-100 &mgr;m, and extends at 60-90° to the rolling direction, and is apart from the adjacent groove by 1 mm measured parallel to the rolling direction.
摘要翻译：公开了一种方法和低铁损晶粒取向电磁钢板。该方法包括以下步骤：对晶粒取向的电磁钢板进行热轧; 通过中间退火将热轧钢板冷轧一次或两次，以达到最终产品的板厚; 退火冷轧钢板脱碳; 脱碳钢板完成退火; 在最终冷轧步骤之后和最终退火步骤之间，通过例如电解蚀刻或酸浸法，在钢板上大致垂直于轧制方向形成线性槽; 并用选自Sn，B和Sb的元素或选自其中的元素的氧化物或硫酸盐填充线性槽。优选地，每个线性槽的宽度为30-300μm，深度为5-100μm，并且沿着轧制方向以60-90°延伸，并且与相邻的槽分开1mm，平行于滚动方向。

118. 发明授权

US06197205B1 Electrolytic solution for lithium cell and method for producing same 有权
标题翻译：锂电池用电解液及其制造方法
公开(公告)号：US06197205B1
公开(公告)日：2001-03-06
申请号：US09572887
申请日：2000-05-18
申请人： Shouichi Tsujioka , Mituo Takahata , Hisakazu Itou , Tadayuki Kawashima , Keiji Sato , Hiromi Sasaki , Sunao Yamamoto
发明人： Shouichi Tsujioka , Mituo Takahata , Hisakazu Itou , Tadayuki Kawashima , Keiji Sato , Hiromi Sasaki , Sunao Yamamoto
IPC分类号： C02F176
CPC分类号： H01M10/052 , C01D15/005 , H01M6/162 , H01M6/164 , H01M6/166 , H01M6/168 , H01M10/0566
摘要： The present invention relates to a method for producing an electrolytic solution containing a solute of lithium hexafluorophosphate. This method includes a step of (a) reacting lithium fluoride with phosphorus pentafluiride, in a nonaqueous organic solvent that is used for producing a lithium cell's electrolytic solution, thereby to form the lithium hexafluorophosphate dissolved in the solvent. According to this method, both yield and purity of the reaction product are sufficiently high, and the reaction can easily be managed. According to need, after the step (a), the nonaqueous organic solvent may be replaced with another nonaqueous organic solvent. The present invention further relates to a method for purifying an electrolytic solution used for a lithium cell. This electrolytic solution contains an acid impurity having at least one hydrogen atom in the molecule. this method includes steps of (a) adding at least one hydrogen-free halide selected from chlorides, bromides and iodides, to the electrolytic solution, such that the acid impurity is reacted with the at least one hydrogen-free halide, thereby to form at least one hydrogen halide selected from hydrogen chloride, hydrogen bromide and hydrogen iodide; and (b) purging the at least one hydrogen halide from the electrolytic solution to purify the electrolytic solution. The acid impurity concentration of the electrolytic solution is substantially reduced by this method.
摘要翻译：本发明涉及含有六氟磷酸锂的溶质的电解液的制造方法。该方法包括以下步骤：（a）在用于制备锂电池的电解液的非水有机溶剂中使氟化锂与五氟乙酸磷反应，从而形成溶解在溶剂中的六氟磷酸锂。根据该方法，反应产物的产率和纯度均足够高，反应容易。根据需要，在（a）工序之后，非水系有机溶剂可以用其他非水有机溶剂代替。本发明还涉及用于锂电池的电解液的净化方法。该电解液含有分子中具有至少一个氢原子的酸性杂质。该方法包括以下步骤：（a）将至少一种选自氯化物，溴化物和碘化物的无氢卤化物加入到电解溶液中，使得酸杂质与至少一种无氢卤化物反应，从而形成选自氯化氢，溴化氢和碘化氢中的至少一种卤化氢; 和（b）从所述电解液中清除所述至少一种卤化氢以净化所述电解液。通过该方法，电解液的酸性杂质浓度明显降低。

119. 发明授权

US5876520A Semiprocessed nonoriented magnetic steel sheet having excellent magnetic characteristics and method for making the same 失效
标题翻译：具有优异磁特性的半加工非取向磁钢板及其制造方法
公开(公告)号：US5876520A
公开(公告)日：1999-03-02
申请号：US930396
申请日：1997-09-30
申请人： Minoru Takashima , Akio Fujita , Keiji Sato , Masaki Kawano
发明人： Minoru Takashima , Akio Fujita , Keiji Sato , Masaki Kawano
IPC分类号： C21D8/12 , C22C38/00 , C22C38/06 , H01F1/147 , H01F1/16 , H01F41/02 , H01F1/14
CPC分类号： C21D8/1233 , H01F1/14775 , H01F41/024
摘要： The present invention relates to a semiprocessed nonoriented magnetic steel sheet which is used in iron cores of motors and transformers, finished to a final product by rolling having a reduction rate of 2 to 18% after final annealing by a manufacturer, and assures desired magnetic characteristics due to coarsening of crystal grains during strain-relief annealing after processing by a user. The excellent magnetic characteristics can be achieved by increasing lubrication during second cold rolling so as to satisfy the equation: e.sub.c .ltoreq.e.sub.s .ltoreq.1.18e.sub.c wherein e.sub.s represents a strain value at the surface layer of the steel sheet and e.sub.c represents a strain value at the central layer.
摘要翻译： PCT No.PCT / JP97 / 00287 Sec。 371日期：1997年9月30日 102（e）1997年9月30日PCT PCT 1997年2月6日提交PCT公布。出版物WO97 / 30180 PCT 日期：1997年8月21日本发明涉及用于电动机和变压器的铁芯的半加工非取向磁钢板，其通过制造商进行最终退火后的轧制精度为2〜18％的轧制成品，并且由用户处理之后的应变消除退火期间由于晶粒粗化而确保期望的磁特性。可以通过在第二次冷轧期间增加润滑来实现优异的磁特性，以满足以下等式：其中es表示钢板表层的应变值，ec表示应变价值在中央层。

120. 发明授权

US5821540A Semiconductor radiation-detecting device 失效
标题翻译：半导体辐射检测装置
公开(公告)号：US5821540A
公开(公告)日：1998-10-13
申请号：US629059
申请日：1996-04-08
申请人： Keiji Sato , Yutaka Saitoh , Teruji Cho , Mafumi Kondoh , Junko Kohagura
发明人： Keiji Sato , Yutaka Saitoh , Teruji Cho , Mafumi Kondoh , Junko Kohagura
IPC分类号： G01J1/02 , G01T1/24 , H01L27/14 , H01L31/09
CPC分类号： G01T1/242
摘要： A semiconductor radiation-detecting device enabling detection of radiation in different energy range. A large number of PIN diodes are laminated one over another with a spacer consisting of an insulator being interposed between each adjacent two of the laminate, whereby radiation is incident in a direction perpendicular to the wider surface of the PIN diode.
摘要翻译：一种能够检测不同能量范围内的辐射的半导体辐射检测装置。大量的PIN二极管被层叠在一起，隔离层由介于每个相邻的层叠体之间的绝缘体组成，由此辐射沿垂直于PIN二极管较宽表面的方向入射。

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