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111. 发明授权

US07011934B2 Pattern formation method 失效
公开(公告)号：US07011934B2
公开(公告)日：2006-03-14
申请号：US10442304
申请日：2003-05-21
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/0751 , G03F7/161 , G03F7/165
摘要： An underlying film having pores or including an organic material is formed on a substrate. In a first chamber, hexamethyldisilazane is supplied onto the surface of the underlying film while annealing the substrate, so as to form a first molecular layer of trimethylsilyl groups on the underlying film. Thereafter, the underlying film is allowed to stand outside the first chamber. Next, in a second chamber, hexamethyldisilazane is supplied onto the surface of the first molecular layer, so as to form a second molecular layer of trimethylsilyl groups on the first molecular layer. Then, a resist film made of a chemically amplified resist material is formed above the underlying film having the second molecular layer thereon. The resist film is subjected to pattern exposure by selectively irradiating with exposing light, and the resist film is developed after the pattern exposure, so as to form a resist pattern.

112. 发明授权

US06949329B2 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US06949329B2
公开(公告)日：2005-09-27
申请号：US10166247
申请日：2002-06-11
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/039 , G03F7/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A resist film with a thickness of 250 nm or less is formed on a semiconductor substrate from a positive chemically amplified resist material including a base polymer whose solubility in an alkaline developer is changed by a function of an acid and an acid generator that has at least one electron attractive group introduced into a meta-position of an aromatic ring included in a counter action and generates an acid through irradiation with electron beams. The resist film is subjected to pattern exposure by irradiating with electron beams or extreme UV of a wavelength of a 1 nm through 30 nm band. The resist film is developed after the pattern exposure, thereby forming a resist pattern.
摘要翻译：一种厚度为250nm以下的抗蚀剂膜由含有碱性聚合物的正性化学放大型抗蚀剂材料形成在半导体基板上，其基体聚合物的溶解度在碱性显影剂中由酸和酸发生剂的功能发生变化，一个引入电子的基团引入包含在反作用中的芳环的间位，并且通过用电子束照射产生酸。抗蚀剂膜通过用电子束照射或波长为1nm至30nm带的极紫外线进行图案曝光。抗蚀剂膜在图案曝光之后显影，从而形成抗蚀剂图案。

113. 发明申请

US20050191576A1 Water-soluble material, chemically amplified resist and pattern formation method using the same 有权
标题翻译：水溶性材料，化学放大抗蚀剂和使用其的图案形成方法
公开(公告)号：US20050191576A1
公开(公告)日：2005-09-01
申请号：US11013333
申请日：2004-12-17
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/095 , G03F7/11 , G03F7/20 , H01L21/027 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.
摘要翻译：用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物，在抗蚀剂膜上形成并入酸产生剂。此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。因此，形成由抗蚀剂膜制成的抗蚀剂图案。

114. 发明申请

US20050186516A1 Barrier film material and pattern formation method using the same 有权
标题翻译：阻挡膜材料和图案形成方法使用相同
公开(公告)号：US20050186516A1
公开(公告)日：2005-08-25
申请号：US11058369
申请日：2005-02-16
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/11 , G03C5/00 , G03F7/00 , G03F7/09 , G03F7/20 , H01L21/00 , H01L21/027 , H01L21/84
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/119 , Y10S430/123
摘要： A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.
摘要翻译：在基板上形成由化学放大抗蚀剂制成的抗蚀剂膜。随后，在抗蚀剂膜上形成用于防止抗蚀剂膜的成分洗脱浸入液体或防止浸渍液渗透到抗蚀剂膜中的阻挡膜。此后，通过设置在阻挡膜上的浸没液体，通过选择性地照射抗蚀剂膜，通过阻挡膜曝光光来进行图案曝光。然后，在去除阻挡膜之后，对经过图案曝光的抗蚀剂膜进行显影，以形成由抗蚀剂膜制成的抗蚀剂图案。

115. 发明申请

US20050164122A1 Chemically amplified resist and pattern formation method 审中-公开
标题翻译：化学放大抗蚀剂和图案形成方法
公开(公告)号：US20050164122A1
公开(公告)日：2005-07-28
申请号：US11037162
申请日：2005-01-19
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/039 , G03F7/11 , G03F7/20 , G03C1/76
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/11 , G03F7/2041
摘要： A resist film made of a chemically amplified resist including a water-soluble polymer is formed on a substrate, whereas the water-soluble polymer has lower gas permeability than the chemically amplified resist. Subsequently, pattern exposure is carried out by selectively irradiating the resist film with exposing light through a mask, and thereafter, the resultant resist film is developed. Thus, a fine resist pattern made of the resist film is formed in a good shape.
摘要翻译：在基材上形成由包含水溶性聚合物的化学增幅抗蚀剂制成的抗蚀剂膜，而水溶性聚合物的透气性低于化学放大抗蚀剂。随后，通过通过掩模曝光光选择性地照射抗蚀剂膜来进行图案曝光，之后，使所得的抗蚀剂膜显影。因此，由抗蚀剂膜制成的精细抗蚀剂图案形成为良好的形状。

116. 发明授权

US06913873B2 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US06913873B2
公开(公告)日：2005-07-05
申请号：US10279063
申请日：2002-10-24
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/039 , G03C5/00 , G03F7/00 , H01L21/027
CPC分类号： G03F7/0392
摘要： A resist film is formed from a chemically amplified resist material including a phenol polymer, an acrylic polymer and an onium salt serving as an acid generator. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band or an electron beam, and is developed after the pattern exposure, so as to form a resist pattern.
摘要翻译：抗蚀剂膜由包含酚聚合物，丙烯酸聚合物和作为酸发生剂的鎓盐的化学放大抗蚀剂材料形成。选择性地照射抗蚀剂膜用于波长为1nm至30nm带或电子束的极紫外的图案曝光，并且在图案曝光之后显影，以形成抗蚀剂图案。

117. 发明申请

US20050106512A1 Semiconductor manufacturing apparatus and pattern formation method 有权
标题翻译：半导体制造装置和图案形成方法
公开(公告)号：US20050106512A1
公开(公告)日：2005-05-19
申请号：US10983655
申请日：2004-11-09
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20 , G03C1/00 , G03C3/00
CPC分类号： G03F7/70341
摘要： A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.
摘要翻译：半导体制造装置包括用于将液体供应到用于保持其上形成有抗蚀剂膜的晶片的台上的液体供应部分; 曝光部，其用设置在所述抗蚀剂膜上的液体通过掩模曝光所述抗蚀剂膜; 以及用于从液体中除去包含在液体中的气体的去除部件。因此，在抗蚀剂膜上设置有从中除去气体的液体，因此可以除去包含在液体中或在曝光期间形成的泡沫。因此，可以防止诸如衍射异常的曝光异常，从而形成具有良好形状的抗蚀剂图案。

118. 发明申请

US20050106499A1 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050106499A1
公开(公告)日：2005-05-19
申请号：US10969097
申请日：2004-10-21
申请人： Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shirrji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
发明人： Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shirrji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
IPC分类号： C08G61/02 , C08F216/14 , C08F220/24 , G03C1/10 , G03C1/492 , G03F7/004 , G03F7/039 , G03F7/085
CPC分类号： G03F7/0397 , C08F216/1408 , C08F220/24 , G03F7/0046 , G03F7/085 , Y10S430/108 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2d) wherein R1 is F or fluoroalkyl, R2 is a single bond or an alkylene or fluoroalkylene, R3 and R4 are H, F, alkyl or fluoroalkyl, at least one of R3 and R4 contains F, R5 is H or an acid labile group, R6 is an acid labile group, adhesive group, alkyl or fluoroalkyl, and “a” is 1 or 2 is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.
摘要翻译：包含式（1）的重复单元和式（2a）至（2d）的重复单元的聚合物，其中R 1是F或氟烷基，R 2是单键或亚烷基或氟亚烷基，R 3和R 4是H，F，烷基或氟代烷基，R 3和R 3中的至少一个， SUP> 4 含有F，R 5是H或酸不稳定基团，R 6是酸不稳定基团，粘合剂基团，烷基或氟烷基，和 “a”为1或2用作基础树脂以配制抗蚀剂组合物，该抗蚀剂组合物具有波长高达200nm的辐射的高透明度，底物粘合性，显影剂亲和性和耐干蚀刻性等优点。

119. 发明授权

US06841488B2 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US06841488B2
公开(公告)日：2005-01-11
申请号：US10279070
申请日：2002-10-24
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , C08F2/44 , C08F257/00 , C08F277/00 , G03F7/038 , G03F7/039 , G03F7/40 , H01L21/027 , H01L21/302 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/40 , H01L21/0273 , Y10S438/949
摘要： A resist film is formed from a chemically amplified resist material including a base polymer having a protecting group released by a function of an acid, an acrylic compound and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated with exposing light for pattern exposure, and is developed after the pattern exposure so as to form a resist pattern having a hole or groove opening. The size of the opening is reduced by irradiating the resist pattern with light with annealing.
摘要翻译：抗蚀剂膜由化学放大抗蚀剂材料形成，该抗蚀剂材料包括具有通过酸，丙烯酸类化合物和酸发生剂释放的保护基的基础聚合物，其在用光照射时产生酸。用曝光光选择性地照射抗蚀剂膜以进行图案曝光，并且在图案曝光之后显影，以形成具有孔或凹槽开口的抗蚀剂图案。通过用退火的光照射抗蚀剂图案来减小开口的尺寸。

120. 发明授权

US06429143B1 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US06429143B1
公开(公告)日：2002-08-06
申请号：US09924092
申请日：2001-08-08
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： H01L21302
CPC分类号： H01L21/0276 , G03F7/091 , H01L21/31138
摘要： An anti-reflection film of an organic compound is formed on a substrate. The anti-reflection film is weakened by carrying out plasma processing on the anti-reflection film, and then, a resist film is formed on the weakened anti-reflection film. The resist film is subjected to pattern exposure and development so as to form a resist pattern from the resist film. The anti-reflection film is dry etched by using the resist pattern as a mask, so as to pattern the anti-reflection film.
摘要翻译：在基板上形成有机化合物的防反射膜。通过对防反射膜进行等离子体处理，抗反射膜被削弱，然后在弱化的抗反射膜上形成抗蚀剂膜。对抗蚀剂膜进行图案曝光和显影，以从抗蚀剂膜形成抗蚀剂图案。通过使用抗蚀剂图案作为掩模来对抗反射膜进行干蚀刻，以对抗反射膜进行图案化。

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