专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明公开

EP2612372A2 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2612372A2
公开(公告)日：2013-07-10
申请号：EP11746232.5
申请日：2011-08-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz , VON MALM, Norwin , SABATHIL, Matthias
IPC分类号： H01L33/22 , H01L25/075 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A light-emitting diode chip is specified, comprising - a semiconductor body (1) comprising a radiation-generating active region (13), - at least two contact locations (2a, 2b) for making electrical contact with the active region, - a carrier (3) and - a connecting means (4), arranged between the carrier (3) and the semiconductor body (1), wherein - the semiconductor body (1) has a roughening (15) at its outer surfaces facing the carrier (3), - the semiconductor body (1) is mechanically connected to the carrier (3) by means of the connecting means (4), - the connecting means (4) is in direct contact with the semiconductor body (1) and the carrier (3) in some locations, and - the at least two contact locations (2a, 2b) are arranged at the top side of the semiconductor body (1) that faces away from the carrier (3).
摘要翻译：提供了一种发光二极管芯片，包括： - 包括辐射产生有源区（13）的半导体本体（1）， - 用于与有源区电接触的至少两个接触位置（2a，2b）， - （3）和布置在所述载体（3）与所述半导体本体（1）之间的连接装置（4），其中 - 所述半导体本体（1）在其面向所述载体的外表面处具有粗糙化（15）所述连接装置（4）与所述半导体本体（1）直接接触，并且所述载体（3）通过所述连接装置（4）与所述载体（3）机械连接，（3），并且 - 所述至少两个接触位置（2a，2b）布置在所述半导体本体（1）的背对所述载体（3）的顶侧处。

112. 发明公开

EP2606511A1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG VON OPTOELEKTRONISCHEN HALBLEITERCHIPS 审中-公开
标题翻译：光电子半导体芯片及其制造方法的光电子半导体芯片
公开(公告)号：EP2606511A1
公开(公告)日：2013-06-26
申请号：EP11743810.1
申请日：2011-08-09
申请人： OSRAM Opto Semiconductors GmbH
发明人： MOOSBURGER, Jürgen , NEUREUTHER, Christoph , VON MALM, Norwin
IPC分类号： H01L25/16 , H05B37/03 , H01L31/173 , H01L27/15 , H01L33/00 , H01L33/38
CPC分类号： H01L33/62 , H01L27/15 , H01L31/153 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip (1) is specified, which comprises a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence, said semiconductor body being arranged on the carrier (5), wherein an emission region (23) and a detection region (24) are formed in the semiconductor body (2) having the semiconductor layer sequence. The semiconductor layer sequence comprises an active region (20), which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22) and is provided in the emission region (23) for generating radiation. The first semiconductor layer (21) is arranged on that side of the active region (20) which faces away from the carrier (5). The emission region (23) has a cutout (25) extending through the active region (20); the first semiconductor layer (21) is electrically conductively connected to a first contact (41) in the emission region (23) via a first connection layer (31), wherein the first connection layer (31) extends in the cutout (25) from the first semiconductor layer (21) in the direction of the carrier (5); the second semiconductor layer (22) is electrically conductively connected to a second contact (42) via a second connection layer (32). The detection region (24) is electrically conductively connected to an additional contact (43). A method for producing an optoelectronic semiconductor chip is furthermore specified.

113. 发明公开

EP2553726A1 OPTOELEKTRONISCHER HALBLEITERCHIP 审中-公开
公开(公告)号：EP2553726A1
公开(公告)日：2013-02-06
申请号：EP11708034.1
申请日：2011-03-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： VON MALM, Norwin
IPC分类号： H01L27/15 , H01L33/38 , H01L25/075 , H01L33/00 , H01L33/44 , H01L33/62
CPC分类号： H01L33/36 , H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/385 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip is specified, comprising - a semiconductor body (1), having an n-conducting region (12) and a p-conducting region (13), and - a single n-type contact element (2), via which the n-conducting region (12) can be electrically contact-connected through the p-conducting region (13).
摘要翻译：一种光电子半导体芯片被指定，包括： - 具有n型导电区域（12）和p型导电区域（13）的半导体主体（1），以及单个n型接触元件（2） n导电区域（12）可以通过p导电区域（13）电接触连接。

114. 发明公开

EP2465139A1 STRAHLUNGSEMITTIERENDES HALBLEITERBAUTEIL 审中-公开
标题翻译：辐射半导体部件
公开(公告)号：EP2465139A1
公开(公告)日：2012-06-20
申请号：EP10740230.7
申请日：2010-08-05
申请人： OSRAM Opto Semiconductors GmbH
发明人： VON MALM, Norwin , WIRTH, Ralph
IPC分类号： H01L27/15 , H01L33/50 , H01L33/08
CPC分类号： H01L27/153 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/50 , H01L33/62 , H01L2224/49107 , H01L2924/3011 , H01L2924/00
摘要： A radiation-emitting semiconductor component is provided, comprising: a light-emitting diode chip (1) having at least two emission regions (2a, 2b) that can be operated independently of each other, at least two differently designed conversion elements (31, 32), wherein during operation of the light-emitting diode chips (1) each of the emission regions (2a, 2b) is provided for generating electromagnetic primary radiation, each emission region (2a, 2b) has an emission surface (21, 22) by which at least part of the primary radiation is decoupled from the light-emitting diode chip (1), the conversion elements (31, 32) are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation, the differently designed conversion elements (31, 32) are disposed downstream of different emission surfaces, and an electric resistance element (4), which is connected in series or parallel to at least one of the emission regions (2a, 2b).

115. 发明公开

EP2368269A1 OPTOELEKTRONISCHE PROJEKTIONSVORRICHTUNG 有权
标题翻译：亚光电子投影设备
公开(公告)号：EP2368269A1
公开(公告)日：2011-09-28
申请号：EP09801388.1
申请日：2009-11-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： VON MALM, Norwin , STREUBEL, Klaus , RODE, Patrick , ENGL, Karl , HÖPPEL, Lutz , MOOSBURGER, Jürgen
IPC分类号： H01L27/15 , H01L33/38 , H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic projection apparatus, which during operation generates a predetermined image (10). The projection apparatus comprises a semi-conductor body (1) which has an active layer (101) suited to generate electromagnetic radiation and a radiation emission side (102). The semi-conductor body (1) is an imaging element of the projection apparatus. For the electrical contacting of the semi-conductor body (1), a first contact layer (2) and a second contact layer (3) are arranged on a back side (103) of the semi-conductor body (1) opposite of the radiation emission side (102) and electrically insulated with respect to each other by way of a separating layer (4).

116. 发明授权

EP2529399B1 BELEUCHTUNGSVORRICHTUNG 有权
公开(公告)号：EP2529399B1
公开(公告)日：2017-09-20
申请号：EP11700426.7
申请日：2011-01-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , VON MALM, Norwin , HOEPPEL, Lutz , ILLEK, Stefan , BARCHMANN, Bernd , RODE, Patrick
IPC分类号： H01L25/075 , H01L33/50
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00

117. 发明授权

EP2454763B1 OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG EINES ANORGANISCHEN OPTOELEKTRONISCHEN HALBLEITERBAUTEILS 有权
标题翻译：光电半导体器件及其制造方法无机光电半导体器件
公开(公告)号：EP2454763B1
公开(公告)日：2017-01-18
申请号：EP10724846.0
申请日：2010-06-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz , VON MALM, Norwin
IPC分类号： H01L33/44 , H01L23/00 , H01L33/40 , H01L33/00
CPC分类号： H01L33/44 , H01L24/05 , H01L33/405 , H01L2224/04042 , H01L2224/05556 , H01L2224/48091 , H01L2924/12041 , H01L2924/12043 , H01L2933/0025 , H01L2924/00014 , H01L2924/00

118. 发明授权

EP2638575B1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZU DESSEN HERSTELLUNG 有权
标题翻译：光电子半导体芯片和方法及其
公开(公告)号：EP2638575B1
公开(公告)日：2016-10-12
申请号：EP11776465.4
申请日：2011-11-02
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , LINKOV, Alexander , KÖLPER, Christopher , STRASSBURG, Martin , VON MALM, Norwin
IPC分类号： H01L33/08 , H01L33/20 , H01L33/24 , H01L33/50 , H01L33/00 , H01L33/42
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083

119. 发明公开

EP2710644A1 OPTOELEKTRONISCHES HALBLEITERMODUL UND DISPLAY MIT EINER MEHRZAHL DERARTIGER MODULE 有权
标题翻译：显示麻醉师的眼科药物HELBLEITERMODUL MEHRZAHL DERARTIGER MODULE
公开(公告)号：EP2710644A1
公开(公告)日：2014-03-26
申请号：EP12715619.8
申请日：2012-03-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： VON MALM, Norwin , BOGNER, Georg , REILL, Joachim , GRÖTSCH, Stefan
IPC分类号： H01L33/20 , F21S8/12 , F21Y105/00 , F21Y101/02
CPC分类号： H01L33/08 , F21K9/00 , F21S41/141 , F21S41/143 , F21S41/18 , F21S41/663 , F21Y2105/12 , F21Y2105/14 , F21Y2115/10 , H01L25/0753 , H01L25/167 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic semiconductor module (10), comprising a plurality of light-emitting areas (1) when in operation, wherein at least two abutting lateral edges (11a, 11b) of at least one light-emitting area (1) are arranged at an angle (α) of more than 0⁰ and less than 90⁰ to each other. The invention further relates to a display having a plurality of such modules (10).
摘要翻译：光电子半导体模块包括在操作时发光的多个发光区域。至少一个发光区域的至少两个邻接横向边缘彼此以大于0度且小于90度的角度布置。另外的实施例涉及具有多个这样的模块的显示器。

120. 发明公开

EP2638575A1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZU DESSEN HERSTELLUNG 有权
标题翻译：光电子半导体芯片和方法及其
公开(公告)号：EP2638575A1
公开(公告)日：2013-09-18
申请号：EP11776465.4
申请日：2011-11-02
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , LINKOV, Alexander , KÖLPER, Christopher , STRASSBURG, Martin , VON MALM, Norwin
IPC分类号： H01L33/20 , H01L33/50 , H01L33/08 , H01L33/24
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： The invention relates to an optoelectronic semiconductor chip (10), which comprises a semiconductor layer stack (2) and a conversion layer (3). The semiconductor layer stack (2) comprises an active layer (2a) for generating radiation. The conversion layer (3) is arranged on a radiation emission side (21) of the semiconductor layer stack (2), wherein the conversion layer (3) is suitable for converting at least a portion of the radiation emitted by the active layer (2a) into radiation having a different wavelength. The radiation emission side (21) of the semiconductor layer stack (2) has a first nanostructuring, wherein the conversion layer (3) is arranged in said first nanostructuring (4). The invention further relates to a method for producing such a semiconductor chip (10).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式