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111. 发明公开

EP2001062A4 MEMBRANE STRUCTURE ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：膜片结构元件及其制造方法
公开(公告)号：EP2001062A4
公开(公告)日：2012-03-28
申请号：EP07740161
申请日：2007-03-28
申请人： KOBE STEEL LTD
发明人： HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , KANNAKA MASATO
IPC分类号： B81C1/00 , C23C16/42 , G01F1/692 , G01J1/02 , H01L35/34 , H01L37/00
CPC分类号： G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612

112. 发明公开

EP1358670A4 PROCESS AND APPARATUS FOR REMOVING RESIDUES FROM THE MICROSTRUCTURE OF AN OBJECT 有权
标题翻译：工艺和装置去除残余物从微观结构的对象
公开(公告)号：EP1358670A4
公开(公告)日：2004-11-17
申请号：EP02736487
申请日：2002-02-08
申请人： KOBE STEEL LTD
发明人： MASUDA KAORU , ILJIMA KATSUYUKI , SUZUKI TETSUO , KAWAKAMI NOBUYUKI , YAMAGATA MASAHIRO , PETERS DARYL W , EGBE MATTHEW I
IPC分类号： B08B3/08 , B08B3/10 , B08B7/00 , C11D7/00 , C11D7/08 , C11D7/26 , C11D7/32 , C11D7/60 , C11D11/00 , C11D17/00 , F26B5/04 , G03F7/42 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/311 , B08B3/00 , C11D1/00 , C11D3/37
CPC分类号： C11D7/02 , B08B7/0021 , C11D7/04 , C11D7/10 , C11D7/3209 , C11D7/3218 , C11D7/5004 , C11D11/0047 , G03F7/422 , G03F7/425 , H01L21/02052 , H01L21/31116 , H01L21/31133 , H01L21/67086
摘要： A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including CO2 and additive for removing the residues and a co-solvent dissolving the additive in said CO2 at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. An apparatus for implementing the process is also provided.

113. 发明公开

EP3171397A4 METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM AND LAMINATED BODY HAVING PROTECTIVE FILM ON SURFACE OF OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM 失效
公开(公告)号：EP3171397A4
公开(公告)日：2018-05-30
申请号：EP15822449
申请日：2015-07-06
申请人： KK KOBE SEIKO SHO KOBE STEEL LTD
发明人： KAWAKAMI NOBUYUKI , HAYASHI KAZUSHI , KUGIMIYA TOSHIHIRO , OCHI MOTOTAKA
IPC分类号： G01R31/265 , H01L21/66 , H01L27/146 , H01L29/66 , H01L29/786
CPC分类号： H01L22/12 , G01R31/2656 , H01L22/14 , H01L27/14649 , H01L27/1465 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： Provided is a method for reliably and simply evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film. Also provided is a method for reliably and simply managing the quality of an oxide semiconductor thin film. This method, which is for evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film, has: a first step, wherein an oxide semiconductor thin film is formed on a substrate, after which the electron state of the oxide semiconductor thin film is measured by a contact method or a noncontact method, thereby evaluating defects arising from in-film defects in the oxide semiconductor thin film; and a second step, wherein the oxide semiconductor thin film is processed on the basis of a condition determined on the basis of that evaluation, after which a protective film is formed on the surface of the oxide semiconductor thin film, and then the electron state of the oxide semiconductor thin film is measured by a contact method or a noncontact method, thereby evaluating defects arising from defects at the interface between the oxide semiconductor thin film and the protective film.

114. 发明公开

EP3166133A4 QUALITY EVALUATION METHOD FOR LAMINATE HAVING PROTECTIVE LAYER ON SURFACE OF OXIDE SEMICONDUCTOR THIN FILM AND QUALITY CONTROL METHOD FOR OXIDE SEMICONDUCTOR THIN FILM 审中-公开
公开(公告)号：EP3166133A4
公开(公告)日：2018-02-21
申请号：EP15814922
申请日：2015-06-22
申请人： KK KOBE SEIKO SHO (KOBE STEEL LTD )
发明人： HAYASHI KAZUSHI , MIKI AYA , KAWAKAMI NOBUYUKI
IPC分类号： H01L21/66 , G01R1/06 , G01R31/26 , G01R31/265 , G01R31/27 , H01L21/28 , H01L27/32 , H01L29/66 , H01L29/786
CPC分类号： G01R31/2656 , G01R1/06 , G01R31/2623 , G01R31/27 , H01L21/28 , H01L22/12 , H01L22/14 , H01L27/32 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78693
摘要： Provided is a method for simply evaluating defects caused in interface states in oxide semiconductor thin films and protective films in TFTs having protective films formed on the surface of oxide semiconductor thin films without actually measuring the characteristics of the same. This evaluation method evaluates defects caused in the interface states by measuring electron states in the oxide semiconductor thin film by a contact method or noncontact method. The defects caused in the interface states are any of the following (1) - (3). (1) Threshold value voltage (V th ) when a positive bias is applied to the thin-film transistor (2) Difference in threshold value voltage (”V th ) before and after applying the positive bias to the thin-film transistor (3) Threshold value during the first measurement when a plurality of measurements is made of the threshold value voltage when a positive bias is applied to the thin-film transistor.

115. 发明公开

EP3079165A4 METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN ABOVE EVALUATION METHOD 审中-公开
标题翻译： BEURTEILUNGSVERFAHRENFÜROXIDHALBLEITER-DÜNNSCHICHT，VERFAHREN ZURQUALITÄTRETROLLEEINER OXIDHALBLEITER-DÜNNSCHICHTUND在DIESEM BEURTEILUNGSVERFAHREN VERWENDETES BEURTEILUNGSELEMENT SOWIE BEURTEILUNGSVORRICHTUNG
公开(公告)号：EP3079165A4
公开(公告)日：2017-07-26
申请号：EP14868640
申请日：2014-12-01
申请人： KK KOBE SEIKO SHO (KOBE STEEL LTD )
发明人： HAYASHI KAZUSHI , MIKI AYA , KUGIMIYA TOSHIHIRO , KAWAKAMI NOBUYUKI
IPC分类号： H01L21/66 , G01N21/84 , G01N22/00 , H01L21/336 , H01L29/786
CPC分类号： G01N22/00 , G01N21/63 , G01N21/8422 , G01N27/04 , H01L22/12 , H01L22/14 , H01L29/7869
摘要： The present invention provides a method for accurately and easily measuring/evaluating/predicting/estimating the electrical resistance of an oxide semiconductor thin film, and a method for managing the film quality. The method for evaluating an oxide semiconductor thin film includes: a first step for irradiating, with excitation light and microwave, a sample on which an oxide semiconductor thin film is formed, measuring the maximum value of the reflected microwave by the thin film which changes due to the excitation light irradiation, then stopping the excitation light irradiation and measuring the change in reflectivity of the microwave from the thin film after the excitation light irradiation has been stopped; and a second step for calculating a parameter corresponding to the slow decay observed after the excitation light irradiation has been stopped from the change in the reflectivity and evaluating the electrical resistivity of the oxide semiconductor thin film.
摘要翻译：本发明提供了用于准确且容易地测量/评估/预测/估计氧化物半导体薄膜的电阻的方法以及用于管理膜质量的方法。用于评估氧化物半导体薄膜的方法包括：第一步骤，用激发光和微波照射其上形成氧化物半导体薄膜的样品，测量通过应变的薄膜反射的微波的最大值照射激发光，然后停止激发光照射，并且在激发光照射已经停止之后测量来自薄膜的微波的反射率的变化; 以及第二步骤，用于计算与反射率的变化停止激发光照射之后观察到的慢衰减相对应的参数，并评估氧化物半导体薄膜的电阻率。

116. 发明公开

EP1589605A4 DIELECTRIC LINE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：德州仪器集团有限公司（HESTELLUNGSVERFAHRENDAFÜR）
公开(公告)号：EP1589605A4
公开(公告)日：2006-08-02
申请号：EP04700170
申请日：2004-01-05
申请人： KOBE STEEL LTD
发明人： MARUYAMA MASAKATSU , KAWAKAMI NOBUYUKI , FUKUMOTO YOSHITO , HIRANO TAKAYUKI
IPC分类号： H01P3/16 , H01P11/00
CPC分类号： H01P3/165 , H01P11/006 , Y10T428/24182
摘要： A dielectric line having a sufficient strength insured and being suitable for mass production, and a production method therefore. A production method for a dielectric line comprising a dielectric strip disposed between almost parallel two conductor plates and being smaller in width than the conductor plates, and a dielectric medium consisting of a porous material filled in potions other than the dielectric strip and being lower in permittivity than the dielectric strip, the method comprising the film forming step (S11, S12) of forming a dielectric material film on one of the conductor plates, the strip exposure step (13) of exposing the shaped portion of the dielectric strip to a specified light, beam or steam, and the step (S15, S16) of rendering porous the dielectric material film in entirety, thereby producing the dielectric line (NRD guide).
摘要翻译：提供了具有足够的确保强度并且适合于批量生产的介质线及其制造方法。该制造方法是制造具有介电条的介质线的方法，所述介质条设置在彼此大致平行的两个导电板之间，其宽度小于导电板的宽度，以及填充在导电性除了介质条之外的板，其由具有小于介质条的介电常数的介电常数的多孔材料组成。介质线（NRD导向件）是通过在其中一个导电板上形成电介质原料的薄膜形成步骤S11和S12来制造的，条带曝光步骤S13中，上述薄膜的一部分具有形状相当于电介质条被暴露于预定的光，光束或蒸汽，以及孔形成步骤S15和S16，其中电介质原料的整个膜是多孔的。

117. 发明专利

JP2002329650A PROCESSING SYSTEM FOR WAFER OR THE LIKE AND METHOD FOR PROCESSING THE SAME 失效
公开(公告)号：JP2002329650A
公开(公告)日：2002-11-15
申请号：JP2001133004
申请日：2001-04-27
申请人： KOBE STEEL LTD , DAINIPPON SCREEN MFG
发明人： INOUE YOICHI , SAKASHITA YOSHIHIKO , WATANABE KATSUMITSU , KAWAKAMI NOBUYUKI , MURAOKA YUSUKE , SAITO KIMITSUGU , IWATA TOMOMI , MIZOBATA IKUO
IPC分类号： G03F7/30 , B65G49/00 , B65G49/07 , H01L21/027 , H01L21/304 , H01L21/306 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a processing system for a wafer or the like which performs process steps from a wet process to a supercritical drying process, and is highly versatile, stable, and highly productive, satisfying economical requirements in production of semiconductor wafers, liquid crystal substrates, or the like. SOLUTION: This processing system comprises at least one wet processing apparatus 1 which accommodates a wafer or the like in its inside and performs wet processing such as developing, film forming, etching, cleaning, and the like, at least one supercritical drying apparatus 2 which accommodates a wafer or the like in its inside and performs supercritical drying, and a transportation apparatus 3 which transports a wafer or the like, keeping the surface of the wafer or the like wet, between the wet processing apparatus 1 and the supercritical drying apparatus 2.

118. 发明专利

JP2002076369A ELECTRONIC ELEMENT, AND DIODE, TRANSISTOR AND THYRISTOR USING THE SAME 失效
公开(公告)号：JP2002076369A
公开(公告)日：2002-03-15
申请号：JP2000266325
申请日：2000-09-01
申请人： KOBE STEEL LTD
发明人： KAWAKAMI NOBUYUKI , YOKOTA YOSHIHIRO
IPC分类号： H01L21/28 , H01L29/74 , H01L29/786 , H01L29/861 , H01L33/28 , H01L33/32 , H01L33/34 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a high-efficiency electronic element and a diode, a transistor and a thyristor using the electronic element which is superior in heat resistance, radiation resistance and high frequency response, suited to high temperature devices, high power devices and high frequency electronic devices, suppresses an Ohmic current and lowers the barriers energy for injecting carriers into a channel from a heavily doped semiconductor, thereby lowering the rising electric field of a spatial charge limiting current. SOLUTION: A high-resistivity semiconductor diamond film 5 having a carrier concentration of 1015 cm-3 or less is provided on an insulator diamond crystal substrate 1, low-resistivity semiconductor diamond films 2a, 2b each having a carrier concentration of 1020 cm-3 or more are provided so as to sandwich that film 5, and the semiconductor diamond films 5, 2a, 2b have the same conductivity type. Source electrodes 11a, drain electrodes 11b and gate electrodes 9b are provided on the semiconductor diamond films 2a, 2b, 5, respectively.

119. 发明专利

JP2002057167A SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002057167A
公开(公告)日：2002-02-22
申请号：JP2000243263
申请日：2000-08-10
申请人： KOBE STEEL LTD
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI
IPC分类号： H01L29/78 , H01L21/338 , H01L29/786 , H01L29/812 , H01L29/861 , H01L33/34 , H01L33/40 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a high-quality and high-performance semiconductor element which has a gate insulating film and a channel and has not a defect in the interface between the gate insulating film and the channel, and to provide the manufacturing method of the semiconductor element. SOLUTION: A semiconductor element is constituted in a structure that a high-concentration B-doped semiconductor diamond layer is formed on an insulative high-pressure synthetic diamond single crystal substrate 1, and semiconductor layers 2a and 2b used as source and drain regions are formed on the substrate 1 by a reactive ion etching. Moreover, after a mask 5a for partially covering the upper parts of the layers 2a and 2b is formed on the layers 2a and 2b, a P-type low-concentration B-doped semiconductor diamond thin film is synthesized on the entire surface of the mask 5a in a thickness of 0.01 μm, for example, by a microwave plasma CVD method. Moreover, the mask 5a is removed along with the diamond thin film formed on the mask 5a, and a semiconductor diamond thin film layer 6 used as a channel layer is formed. After that, electrodes 7 and 8 are respectively formed on the layers 2a and 2b.

120. 发明专利

JP2001257234A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001257234A
公开(公告)日：2001-09-21
申请号：JP2000064051
申请日：2000-03-08
申请人： KOBE STEEL LTD
发明人： FUKUMOTO YOSHITO , KAWAKAMI NOBUYUKI , KINOSHITA TAKASHI , HIRANO TAKAYUKI , INOUE KENICHI
IPC分类号： H01L23/12 , H01L21/60 , H01L23/14
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can be mass-produced, can prevent the impedance mismatching of the semiconductor device to be mounted, and can greatly reduce the loss of a high-frequency signal, and its manufacturing method. SOLUTION: On a resin substrate 1 where a micro strip line of an external circuit is formed on an upper surface, a high-frequency semiconductor element 2 is arranged. A flexible tape frame 3 is arranged on the semiconductor element 2. A micro strip line 8 for a high-frequency signal is formed on the lower surface of the tape frame 3. By the micro strip line 8, the micro strip line 5 of the external circuit for a high frequency being formed on the resin substrate 1 is connected to the semiconductor device 2.

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