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    • 114. 发明授权
    • Valve for vacuum exhaustion system
    • 真空排气系统阀门
    • US07472887B2
    • 2009-01-06
    • US10545672
    • 2004-02-09
    • Tadahiro OhmiNobukazu IkedaMichio YamajiMasafumi KitanoAkihiro Morimoto
    • Tadahiro OhmiNobukazu IkedaMichio YamajiMasafumi KitanoAkihiro Morimoto
    • F16K7/17
    • F16K7/14F16K27/003F16K51/02
    • The present invention provides a valve which makes it possible to reduce the diameter of the vacuum exhaustion pipings for making the facility for the vacuum exhaustion system small, as a result lowering the costs, and making the vacuum exhaustion time short, and also which can prevent the corrosions, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of the gas.Specifically, the aluminum passivation is applied on the piping parts, i.e. the valve and others, used in the vacuum exhaustion system to inhibit the gas decomposition caused by the temperature rise at the time of the baking so that components for the reduction in the diameter size in the vacuum exhaustion system are provided. The corrosions, cloggings and seat leakages caused by the gas decomposition are prevented.
    • 本发明提供一种阀,其能够减小用于真空排气系统的设备的真空排气管的直径,结果是降低成本,并且使真空耗尽时间短,并且还可以防止 由气体分解产生的物质的积聚引起的管道系统内的腐蚀,堵塞和密封泄漏。 具体地说,在真空耗尽系统中使用的管道部件即阀门等上施加铝钝化,以抑制由烘烤时的温度升高引起的气体分解,从而减小直径尺寸的部件 在真空耗尽系统中提供。 防止气体分解引起的腐蚀,堵塞和座椅泄漏。
    • 116. 发明授权
    • Rotary silicon wafer cleaning apparatus
    • 旋转硅片清洗装置
    • US07103990B2
    • 2006-09-12
    • US10498800
    • 2003-09-11
    • Tadahiro OhmiYasuyuki ShiraiTakumi FujitaYukio MinamiNobukazu IkedaAkihiro MorimotoKoji Kawada
    • Tadahiro OhmiYasuyuki ShiraiTakumi FujitaYukio MinamiNobukazu IkedaAkihiro MorimotoKoji Kawada
    • F26B5/08
    • H01L21/67034H01L21/02052
    • It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
    • 本发明的目的是提供一种旋转型硅晶片清洁装置,以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。 根据本发明,旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构,用于在后期化学清洗时用纯水清洗硅晶片,在外表面上进行干燥和氢终止处理 通过安装硅晶片干燥装置来执行硅晶片,所述硅晶片干燥装置包括附接到壳体的气体供应板,以供应氢气和含有大于0.05%的氢气的惰性气体的混合气体,混合气体供应 一端连接上述气体供给面板的气体混合器的管道,将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置, 在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基,从而喷出混合气体 在完成清洁之后,将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。
    • 118. 发明申请
    • Pipe joint
    • 管接头
    • US20050179259A1
    • 2005-08-18
    • US10506671
    • 2003-03-19
    • Kazuhiko SugiyamaKeiko HadaEiji IdetaNobukazu IkedaNaofumi YasumotoMichio Yamaji
    • Kazuhiko SugiyamaKeiko HadaEiji IdetaNobukazu IkedaNaofumi YasumotoMichio Yamaji
    • F16L19/08F16L19/02F16L19/025F16L19/03F16L23/036F16L47/14F16L17/00
    • F16L19/0218F16L19/0225F16L19/025
    • A pipe joint 1 comprises a first joint member 2 of synthetic resin having an annular recessed portion 7 in an end face thereof, and a second joint member 3 of synthetic resin having an annular ridge 8 on an end face thereof. The ridge 8 is fitted in the opening of the recessed portion 7, with a synthetic resin gasket 4 fitted in the recessed portion 7. When the pipe joint 1 is properly tightened up, the outer surface of the ridge 8 of the second joint member 3 is pressed against the inner surface of the recessed portion 7 of the first joint member 2 with the gasket 4 interposed therebetween in intimate contact the surfaces approximately over the entire areas thereof, a portion 2d of the end face of the first joint member 2 positioned radially inwardly of the recessed portion is then in intimate contact with a portion 3d of the end face of the second joint member 3 positioned radially inwardly of the ridge approximately over the entire surface areas thereof, a portion 2e of the end face of the first joint member 2 positioned radially outwardly of the recessed portion is then in intimate contact with a portion 3e of the end face of the second joint member 3 positioned radially outwardly of the ridge approximately over the entire surface areas thereof.
    • 管接头1包括合成树脂的第一接头构件2,其端面具有环形凹部7,在其端面上具有合成树脂的第二接头构件3,其具有环形脊8。 脊8装配在凹部7的开口中,合成树脂垫圈4装配在凹部7中。 当管接头1被适当地紧固时,第二接头构件3的脊8的外表面被密封接触地压靠在第一接头构件2的凹部7的内表面上,垫圈4插入其中 表面大致在其整个区域上,位于凹部的径向内侧的第一接合构件2的端面的部分2d然后与位于第二接头构件3的端面的部分3d紧密接触 大致在其整个表面区域的脊部的径向内侧,位于凹部的径向外侧的第一接合部件2的端面的部分2e紧密接触于凹部的端面部分3e 第二接头构件3大致在其整个表面区域上径向向外设置。
    • 119. 发明授权
    • Low flow rate moisture supply process
    • 低流量水分供应过程
    • US06334962B1
    • 2002-01-01
    • US09207763
    • 1998-12-09
    • Yukio MinamiKoji KawadaYoshikazu TanabeNobukazu IkedaAkihiro Morimoto
    • Yukio MinamiKoji KawadaYoshikazu TanabeNobukazu IkedaAkihiro Morimoto
    • C01B500
    • F22B1/003C01B5/00
    • A process of supplying moisture at low flow rates which permits high precision control of the flow of moisture to a semiconductor manufacturing line from an apparatus for the generation of moisture, characterized in that the flow of hydrogen to a moisture-generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are (a) fed into a reactor provided with a coat of platinum on the wall in the interior space, (b) enhanced in reactivity by the platinum catalytic action, and (c) caused to instantaneously react with each other at a temperature lower than the ignition point to produce moisture without undergoing combustion at a high temperature.
    • 以低流量供应水分的方法,其允许从用于产生水分的装置对半导体生产线的水分流的高精度控制,其特征在于,通过装置控制氢气流向产生水分的反应器 的流量控制器,使得所供给的氢气的量从开始逐渐增加并达到特定设定水平,使得当经过特定时间时,开始产生预定的水分率并将其供应到半导体 生产线。 在用于产生水分的装置中产生水分,其中(a)在内部空间的壁上被供给到设置有铂层的反应器的反应器中,(b)通过铂催化作用增强反应性, 和(c)在低于点火点的温度下彼此瞬间反应以产生湿气,而不会在高温下经历燃烧。