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111. 发明申请

US20070026608A1 FLASH MEMORY DEVICES HAVING MULTILAYERED INTER-GATE DIELECTRIC LAYERS INCLUDING METAL OXIDE LAYERS AND METHODS OF MANUFACTURING THE SAME 失效
标题翻译：具有包括金属氧化物层的多层间隙介电层的闪存存储器件及其制造方法
公开(公告)号：US20070026608A1
公开(公告)日：2007-02-01
申请号：US11383102
申请日：2006-05-12
申请人： Han-Mei Choi , Young-Geun Park , Seung-Hwan Lee , Young-Sun Kim
发明人： Han-Mei Choi , Young-Geun Park , Seung-Hwan Lee , Young-Sun Kim
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11519 , H01L27/11521
摘要： Embodiments of the present invention provide methods of manufacturing memory devices including forming floating gate patterns on a semiconductor substrate having active regions thereon, wherein the floating gate patterns cover the active regions and are spaced apart from the active regions; forming an inter-gate dielectric layer on the semiconductor substrate having the floating gate patterns by alternately stacking a zirconium oxide layer and an aluminum oxide layer at least once, wherein the inter-gate dielectric layer is formed by a deposition process using O3 gas as a reactive gas; forming a control gate layer on the inter-gate dielectric layer; and forming a control gate, an inter-gate dielectric layer pattern and a floating gate by sequentially patterning the control gate layer, the inter-gate dielectric layer and the floating gate pattern, wherein the inter-gate dielectric layer pattern and the control gate are sequentially stacked across the active regions, and the floating gate is formed between the active regions and the inter-gate dielectric layer pattern Memory devices, such as flash memory devices are also provided.
摘要翻译：本发明的实施例提供了制造存储器件的方法，包括在其上具有有源区的半导体衬底上形成浮置栅极图案，其中浮置栅极图案覆盖有源区并与有源区间隔开; 通过将氧化锆层和氧化铝层交替层叠至少一次来形成具有浮置栅极图案的半导体衬底上的栅极间电介质层，其中栅极间电介质层通过使用O 2的沉积工艺形成， 3气体作为反应气体; 在所述栅极间电介质层上形成控制栅极层; 以及通过对控制栅极层，栅极间电介质层和浮置栅极图案顺序构图来形成控制栅极，栅极间电介质层图案和浮置栅极，其中栅极间电介质层图案和控制栅极是顺序堆叠在有源区上，并且在有源区之间形成浮栅，并且还提供诸如闪存器件的栅极间电介质层图案存储器件。

112. 发明授权

US07130360B2 Apparatus and method for receiving digital signal 失效
公开(公告)号：US07130360B2
公开(公告)日：2006-10-31
申请号：US10293317
申请日：2002-11-13
申请人： Seung-Hwan Lee , Kim Eung Bae , Shin Eun-Jeong
发明人： Seung-Hwan Lee , Kim Eung Bae , Shin Eun-Jeong
IPC分类号： H04L27/22
CPC分类号： H04L7/007 , H04L25/45 , H04L2007/047
摘要： A receiving apparatus and method for a synchronizing process in the digital communication system is disclosed. A receiving apparatus includes: a A/D converting unit for performing an over-sampling process and outputting over-sampled points; a sample classifying unit for classifying the over-sampled points; a integration unit for integrating classified symbol values; a symbol synchronizing unit for selecting a point of symbol synchronization; a frequency estimating unit for estimating a frequency error; and a digital demodulating unit for demodulating values outputted from the symbol synchronizing unit and the frequency estimating unit to a signal. The present invention can simplify a configuration of the apparatus and reduce an amount of parameter-control. Moreover, the present invention can be used in a burst mode of a digital communication system.

113. 发明授权

US07094712B2 High performance MIS capacitor with HfO2 dielectric 失效
标题翻译：具有HfO2电介质的高性能MIS电容器
公开(公告)号：US07094712B2
公开(公告)日：2006-08-22
申请号：US10793818
申请日：2004-03-08
申请人： Ki-Vin Im , Ki-Yeon Park , Jae-Hyun Yeo , In-Sung Park , Seung-Hwan Lee , Young-Sun Kim , Sung-Tae Kim
发明人： Ki-Vin Im , Ki-Yeon Park , Jae-Hyun Yeo , In-Sung Park , Seung-Hwan Lee , Young-Sun Kim , Sung-Tae Kim
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02181 , H01L21/022 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.
摘要翻译：公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地是HfO 2 电介质层的方法，其中形成一系列薄的中间层并用一个或多个在下一个中间层之前形成氧化剂和氮。中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能材料

114. 发明授权

US07039124B2 Apparatus and method for compensating for analog quadrature modulation error 失效
标题翻译：用于补偿模拟正交调制误差的装置和方法
公开(公告)号：US07039124B2
公开(公告)日：2006-05-02
申请号：US10977498
申请日：2004-11-01
申请人： Seung-Hwan Lee
发明人： Seung-Hwan Lee
IPC分类号： H04L25/03
CPC分类号： H03F1/3241
摘要： An apparatus and method for compensating for an analog quadrature modulation (AQM) error in a linearization apparatus for AQM-modulating a digital predistorted signal and outputting the AQM-modulated signal through a high-power amplifier. In the apparatus and method, a gain/phase error estimator predicts a gain/phase imbalance error caused by AQM on the predistorted signal. A Direct Current (DC) offset estimator predicts a DC offset for a feedback signal from the high-power amplifier. An error compensator compensates for the digital predistorted signal for a DC offset signal output from the DC offset estimator, and then compensates for a gain/phase error output from the gain/phase error estimator.
摘要翻译：一种用于补偿用于AQM调制数字预失真信号并通过高功率放大器输出AQM调制信号的线性化装置中的模拟正交调制（AQM）误差的装置和方法。在装置和方法中，增益/相位误差估计器预测由AQM对预失真信号引起的增益/相位不平衡误差。直流（DC）偏移估计器预测来自高功率放大器的反馈信号的直流偏移。误差补偿器补偿从DC偏移估计器输出的DC偏移信号的数字预失真信号，然后补偿来自增益/相位误差估计器的增益/相位误差输出。

115. 发明申请

US20050253652A1 Digital predistortion apparatus and method in power amplifier 有权
标题翻译：功率放大器中的数字预失真装置和方法
公开(公告)号：US20050253652A1
公开(公告)日：2005-11-17
申请号：US11126322
申请日：2005-05-11
申请人： Yoo-Seung Song , Jae-Hyok Lee , Seung-Hwan Lee , Ki-Hwan Hwang , Jae-Ho Jeon , Seung-Joo Maeng
发明人： Yoo-Seung Song , Jae-Hyok Lee , Seung-Hwan Lee , Ki-Hwan Hwang , Jae-Ho Jeon , Seung-Joo Maeng
IPC分类号： H04B7/26 , H03F1/26 , H03F1/32
CPC分类号： H03F1/3247
摘要： A digital predistortion apparatus is provided for predistorting a nonlinear characteristic caused by a wideband power amplifier that amplifies a input signal. The digital predistortion apparatus includes a predistorter, connected to the power amplifier via a digital-to-analog converter (DAC) and a frequency up-converter, for receiving the input signal and compensating for the nonlinear characteristic using a look-up table that depends upon a change in output power of the power amplifier. The digital predistortion apparatus further includes look-up table (LUT) updating block for adaptively updating the look-up table by comparing a feedback signal output from the power amplifier, connected thereto via an analog-to-digital converter (ADC), with the input signal output from the predistorter.
摘要翻译：提供一种用于预失真由放大输入信号的宽带功率放大器引起的非线性特性的数字预失真装置。数字预失真装置包括一个预失真器，它通过一个数/模转换器（DAC）和一个上变频器连接到功率放大器，用于接收输入信号，并使用一个查找表来补偿非线性特性在功率放大器的输出功率变化时。数字预失真装置还包括查找表（LUT）更新块，用于通过将经由模数转换器（ADC）连接到其的功率放大器输出的反馈信号与自动更新查找表与来自预失真器的输入信号输出。

116. 发明申请

US20050107137A1 Sliding/hinge apparatus for sliding/rotating type mobile terminals 有权
标题翻译：用于滑动/旋转式移动终端的滑动/铰链装置
公开(公告)号：US20050107137A1
公开(公告)日：2005-05-19
申请号：US10917353
申请日：2004-08-13
申请人： Chang-Heum Byun , Jong-Gun Bae , Sung-Ill Kang , Seung-Hwan Lee
发明人： Chang-Heum Byun , Jong-Gun Bae , Sung-Ill Kang , Seung-Hwan Lee
IPC分类号： F16C11/04 , F16C11/10 , H04M1/02 , H05K5/02 , H04M1/00
CPC分类号： H04M1/0237 , H04M1/0227 , H04M1/0233 , Y10T16/54028 , Y10T16/5472
摘要： Disclosed herein is a sliding/hinge apparatus for sliding/rotating type mobile terminals, which can be slid and rotated from a body housing of the sliding/rotating type mobile terminal. The sliding/rotating type mobile terminal includes a body housing and a slide housing slidably mounted on the body housing. The apparatus comprises first and second hinge frames mounted in the body housing by means of screws, first and second plates, one or more slide bars, and a coupling unit inserted through the center parts of the first and second hinge frames so that the first and second hinge frames are rotatably coupled with each other while being opposite to each other.
摘要翻译：这里公开了一种用于滑动/旋转型移动终端的滑动/铰链装置，其可以从滑动/旋转式移动终端的主体壳体滑动和旋转。滑动/旋转式移动终端包括主体壳体和可滑动地安装在主体壳体上的滑动壳体。该装置包括通过螺钉，第一和第二板，一个或多个滑动杆以及通过第一和第二铰链框架的中心部分插入的联接单元安装在主体壳体中的第一和第二铰链框架，使得第一和第二铰链框架第二铰链框架彼此相对地可旋转地联接。

117. 发明授权

US06531388B2 Method of forming an aluminum film for use in manufacturing a semiconductor device 失效
标题翻译：形成用于制造半导体器件的铝膜的方法
公开(公告)号：US06531388B2
公开(公告)日：2003-03-11
申请号：US10201784
申请日：2002-07-25
申请人： Jong-Yong Bae , Seung-Hwan Lee
发明人： Jong-Yong Bae , Seung-Hwan Lee
IPC分类号： H01L214763
CPC分类号： H01L21/76838
摘要： A method of manufacturing a semiconductor device is capable of preventing a local delamination at the interface between an aluminum film and an anti-reflective layer formed thereon. After aluminum is deposited on a substrate, the aluminum film is slowly cooled. Then, the substrate is left as is for more than 3 minutes before a venting process takes place in which thermal energy is generated. Then, an anti-reflective layer is formed on the aluminum film. Thermal stress in the aluminum film is relieved by the slow cooling of the aluminum film and the delay before the venting process. Accordingly, when a thermal process is carried out after the anti-reflective layer is formed on the aluminum film, little shear stress is generated at the interface between the aluminum film and the anti-reflective layer.
摘要翻译：制造半导体器件的方法能够防止铝膜与其上形成的抗反射层之间的界面处的局部分层。铝沉积在基板上之后，铝膜被缓慢冷却。然后，在发生热能的排气过程之前，将衬底留下3分钟以上。然后，在铝膜上形成抗反射层。通过铝膜的缓慢冷却和排气过程之间的延迟，铝膜中的热应力得以缓解。因此，当在铝膜上形成抗反射层之后进行热处理时，在铝膜和抗反射层之间的界面处产生很小的剪切应力。

118. 发明授权

US06218260B1 Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby 失效
标题翻译：形成具有改善的电极和电介质层特性的集成电路电容器的方法以及由此形成的电容器
公开(公告)号：US06218260B1
公开(公告)日：2001-04-17
申请号：US09036356
申请日：1998-03-06
申请人： Seung-Hwan Lee , Sang-Hyeop Lee , Young-Sun Kim , Se-Jin Shim , You-Chan Jin , Ju-Tae Moon , Jin-Seok Choi , Young-Min Kim , Kyung-Hoon Kim , Kab-Jin Nam , Young-Wook Park , Seok-Jun Won , Young-Dae Kim
发明人： Seung-Hwan Lee , Sang-Hyeop Lee , Young-Sun Kim , Se-Jin Shim , You-Chan Jin , Ju-Tae Moon , Jin-Seok Choi , Young-Min Kim , Kyung-Hoon Kim , Kab-Jin Nam , Young-Wook Park , Seok-Jun Won , Young-Dae Kim
IPC分类号： H01L2120
CPC分类号： H01L28/84 , Y10S438/964
摘要： Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the conductive layer pattern. The inclusion of a HSG silicon surface layer on an outer surface of the conductive layer pattern increases the effective surface area of the lower electrode for a given lateral dimension. The HSG silicon surface layer is also preferably sufficiently doped with first conductivity type dopants (e.g., N-type) to minimize the size of any depletion layer which may be formed in the lower electrode when the capacitor is reverse biased and thereby improve the capacitor's characteristic Cmin/Cmax ratio. A diffusion barrier layer (e.g., silicon nitride) is also formed on the lower electrode and then a dielectric layer is formed on the diffusion barrier layer. The diffusion barrier layer is preferably made of a material of sufficient thickness to prevent reaction between the dielectric layer and the lower electrode and also prevent out-diffusion of dopants from the HSG silicon surface layer to the dielectric layer. The dielectric layer is also preferably formed of a material having high dielectric strength to increase capacitance.
摘要翻译：形成集成电路电容器的方法包括以下步骤：通过在半导体衬底上形成导电层图案（例如，硅层）形成电容器的下电极，然后形成第一导电类型的半球形晶粒（HSG）硅表面层导电层图案。在导电层图案的外表面上包含HSG硅表面层增加给定横向尺寸的下电极的有效表面积。 HSG硅表面层还优选地充分掺杂有第一导电型掺杂剂（例如，N型），以使电容器反向偏置时可能在下电极中形成的任何耗尽层的尺寸最小化，从而提高电容器的特性 Cmin / Cmax比。扩散阻挡层（例如，氮化硅）也形成在下电极上，然后在扩散阻挡层上形成电介质层。扩散阻挡层优选由足够厚度的材料制成，以防止介电层和下电极之间的反应，并且还防止掺杂剂从HSG硅表面层向电介质层的扩散。电介质层还优选由具有高介电强度的材料形成以增加电容。

119. 发明授权

US09153499B2 Semiconductor device having metal plug and method of forming the same 有权
标题翻译：具有金属塞的半导体装置及其形成方法
公开(公告)号：US09153499B2
公开(公告)日：2015-10-06
申请号：US13425906
申请日：2012-03-21
申请人： Wan-Don Kim , Seung-Hwan Lee , Beom-Seok Kim , Kyu-Ho Cho , Oh-Seong Kwon , Geun-Kyu Choi , Ji-Eun Lim , Yong-Suk Tak
发明人： Wan-Don Kim , Seung-Hwan Lee , Beom-Seok Kim , Kyu-Ho Cho , Oh-Seong Kwon , Geun-Kyu Choi , Ji-Eun Lim , Yong-Suk Tak
IPC分类号： H01L27/06 , H01L21/8234
CPC分类号： H01L21/823475 , H01L21/823456
摘要： Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.
摘要翻译：提供了包括第一，第二和第三源极/漏极区域的半导体器件。提供了与第一源/漏区接触的第一导电插塞，具有第一宽度和第一高度，并且包括第一材料。设置覆盖第一导电插塞和基板的层间绝缘层。提供垂直穿过层间绝缘层以与具有第二宽度和第二高度并且包括第二材料的第二源/漏区接触的第二导电插塞。设置垂直贯穿层间绝缘层与第三源极/漏极区域接触的第三导电插塞，具有第三宽度和第三高度，并且包括第三材料。第二种材料包括贵金属，贵金属氧化物或钙钛矿型导电氧化物。

120. 发明授权

US09083491B2 Method for transmitting a signal while avoiding the influences of an interference signal existing in the same channel in a communication system having a main communication device and a plurality of terminal communication devices 有权
标题翻译：用于在具有主通信设备和多个终端通信设备的通信系统中避免同一信道中存在的干扰信号的影响的信号发送方法
公开(公告)号：US09083491B2
公开(公告)日：2015-07-14
申请号：US13876833
申请日：2011-09-02
申请人： Yong-Hwan Lee , Jin-Seok Han , Seung-Hwan Lee
发明人： Yong-Hwan Lee , Jin-Seok Han , Seung-Hwan Lee
IPC分类号： H04L1/00 , H04J11/00
CPC分类号： H04L1/0034 , H04J11/003
摘要： The method for transmitting a signal while avoiding the influences of an interference signal in the same channel according to the present invention comprises: a process in which communication devices in the communication system perceive, in a distributed manner, whether or not an interference signal exists in a transmission channel being used; a process in which the communication devices in the communication system temporarily transceive signals using a plurality of available transmission channels other than the transmission channel currently being used so as to avoid an interference signal if the interference signal is perceived; and a process of determining the channel having a best link state as a transmission channel from among the plurality of used transmission channels and returning to an existing transmission system using a single channel.
摘要翻译：根据本发明的用于发送信号同时避免干扰信号在同一信道中的影响的方法包括：通信系统中的通信设备以分布式方式感知是否存在干扰信号的过程使用传输信道; 通信系统中的通信装置使用除当前正在使用的传输信道之外的多个可用传输信道来临时收发信号，以便如果感知到干扰信号，则避免干扰信号的过程; 以及从多个使用的传输信道中确定具有最佳链路状态的信道作为传输信道并返回到使用单个信道的现有传输系统的处理。

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