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111. 发明授权

US07518204B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07518204B2
公开(公告)日：2009-04-14
申请号：US11518235
申请日：2006-09-11
申请人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01L33/12 , H01L33/32 , H01S5/0217 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.
摘要翻译：半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层活动层氮化物半导体层由半导体衬底的相同构成元件形成。氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。

112. 发明申请

US20080317080A1 SEMICONDUCTOR LASER DEVICE 失效
标题翻译：半导体激光器件
公开(公告)号：US20080317080A1
公开(公告)日：2008-12-25
申请号：US12109124
申请日：2008-04-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/1039 , H01S5/3201 , H01S5/32341 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
摘要翻译：在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部，半导体激光元件的方向或第二方向基本上最小。

113. 发明申请

US20080291958A1 SEMICONDUCTOR LASER DEVICE 失效
标题翻译：半导体激光器件
公开(公告)号：US20080291958A1
公开(公告)日：2008-11-27
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

114. 发明申请

US20080224151A1 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
标题翻译：基于氮化物的半导体元件和形成氮化物基半导体的方法
公开(公告)号：US20080224151A1
公开(公告)日：2008-09-18
申请号：US12071978
申请日：2008-02-28
申请人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
发明人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/2214 , H01S5/227 , H01S5/34333 , H01S2304/12
摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
摘要翻译：获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

115. 发明授权

US07312480B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07312480B2
公开(公告)日：2007-12-25
申请号：US11175310
申请日：2005-07-07
申请人： Masayuki Hata , Tatsuya Kunisato , Kouji Tominaga , Yasuhiko Matsushita
发明人： Masayuki Hata , Tatsuya Kunisato , Kouji Tominaga , Yasuhiko Matsushita
IPC分类号： H01L21/20
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0218 , H01S5/34333 , H01S2301/173
摘要： A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.
摘要翻译：在比单晶生长温度低的温度的基板上形成第一缓冲层，由不含Ga和In的氮化物构成的层中的一个或多个，具有两个以上不同的薄膜的层循环地层叠弹性模量，并且在第一缓冲层上形成具有降低的Al组成比和在从第一缓冲层到器件构成层的方向上增加的Ga组成比的层在单晶生长温度下，在第二缓冲层上形成由氮化物半导体构成的器件构成层。

116. 发明申请

US20070075320A1 Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US20070075320A1
公开(公告)日：2007-04-05
申请号：US11529475
申请日：2006-09-29
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0213 , H01S5/02272 , H01S5/02492 , H01S5/0425 , H01S5/2009 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2301/176 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; and areas, in which no adhesive layer exists, the areas being near the ends respectively of the cavity surfaces, the ends being closer to the supporting substrate.
摘要翻译：半导体激光装置包括：支撑基板; 半导体激光器件部分，其形成在所述支撑基板的表面上，并且包括一对空腔表面; 支撑基板和半导体激光装置部分彼此粘合的粘合层; 以及其中没有粘合剂层的区域，分别位于空腔表面的端部附近的区域，端部更靠近支撑衬底。

117. 发明申请

US20060237739A1 Light-emitting device and illuminator 有权
标题翻译：发光装置和照明器
公开(公告)号：US20060237739A1
公开(公告)日：2006-10-26
申请号：US11475186
申请日：2006-06-27
申请人： Masayuki Shono , Masayuki Hata
发明人： Masayuki Shono , Masayuki Hata
IPC分类号： H01L33/00 , H01L29/22 , H01L29/227
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/58 , H01L2933/0091
摘要： A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.
摘要翻译：获得能够获得漫射光的具有高光提取效率的发光装置。该发光装置包括发光二极管，形成在基本上平行于发光二极管的发光表面的平面上的部分，其具有相对于所述发光二极管的面内方向周期性调制的介电常数并且设置在发光二极管的发光表面侧的用于漫射从发光二极管发出的光的部件。

118. 发明授权

US07116693B2 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
公开(公告)号：US07116693B2
公开(公告)日：2006-10-03
申请号：US11233088
申请日：2005-09-23
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01S5/10
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

119. 发明授权

US07088755B2 Nitride-base semiconductor laser device 失效
标题翻译：氮化物半导体激光器件
公开(公告)号：US07088755B2
公开(公告)日：2006-08-08
申请号：US10663707
申请日：2003-09-17
申请人： Yasuhiko Nomura , Daijiro Inoue , Masayuki Hata , Takashi Kano
发明人： Yasuhiko Nomura , Daijiro Inoue , Masayuki Hata , Takashi Kano
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： B82Y20/00 , H01S5/0218 , H01S5/0425 , H01S5/2231 , H01S5/3211 , H01S5/32341 , H01S5/34333
摘要： A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material, an n-type cladding layer formed on the substrate, an active layer consisting of a nitride-based semiconductor formed on the n-type cladding layer, a p-type cladding layer formed on the active layer and a light guide layer formed only between the active layer and the p-type cladding layer in the interspaces between the active layer and the n- and p-type cladding layers.
摘要翻译：提供一种能够实现激光束稳定并抑制阈值电流和工作电流增加的氮化物系半导体激光器件。该氮化物系半导体激光装置包括由掺杂有杂质的氮化物系半导体或硼化物系材料构成的基板，形成在基板上的n型包覆层，由氮化物系半导体形成在n型包覆层上的p型包覆层和形成在有源层上的p型包覆层和仅在有源层和n型之间的间隙中的有源层和p型包层之间形成的导光层，以及 p型覆层。

120. 发明授权

US06977953B2 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US06977953B2
公开(公告)日：2005-12-20
申请号：US10200771
申请日：2002-07-24
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

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