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111. 发明授权

US07105460B2 Nitrogen-free dielectric anti-reflective coating and hardmask 有权
标题翻译：无氮电介质抗反射涂层和硬掩模
公开(公告)号：US07105460B2
公开(公告)日：2006-09-12
申请号：US10193489
申请日：2002-07-11
申请人： Bok Hoen Kim , Sudha Rathi , Sang H. Ahn , Christopher D. Bencher , Yuxiang May Wang , Hichem M'Saad , Mario D. Silvetti
发明人： Bok Hoen Kim , Sudha Rathi , Sang H. Ahn , Christopher D. Bencher , Yuxiang May Wang , Hichem M'Saad , Mario D. Silvetti
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/31144 , H01L21/314 , H01L21/31633 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
摘要翻译：提供了沉积电介质材料的方法。电介质材料可用于抗反射涂层或硬掩模。一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和有机硅化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料。介电材料包括硅和氧。

112. 发明申请

US20060105106A1 Tensile and compressive stressed materials for semiconductors 审中-公开
标题翻译：用于半导体的拉伸和压应力材料
公开(公告)号：US20060105106A1
公开(公告)日：2006-05-18
申请号：US11055936
申请日：2005-02-11
申请人： Mihaela Balseanu , Kee Jung , Lihua Huang , Li-Qun Xia , Rongping Wang , Derek Witty , Lewis Stern , Martin Seamons , Hichem M'Saad , Michael Kwan
发明人： Mihaela Balseanu , Kee Jung , Lihua Huang , Li-Qun Xia , Rongping Wang , Derek Witty , Lewis Stern , Martin Seamons , Hichem M'Saad , Michael Kwan
IPC分类号： C23C16/00 , B05D3/00 , H05H1/24
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , C23C16/56 , H01J37/32082 , H01L21/02274 , H01L21/3105 , H01L21/3185 , H01L2924/0002 , H01L2924/00
摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.
摘要翻译：在基板上形成应力膜。将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。还可以加入稀释气体如氮气。沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。还描述了用于沉积应力材料的脉冲等离子体方法。

113. 发明申请

US20050227502A1 Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity 审中-公开
标题翻译：通过形成有机硅基质和大孔隙剂作为增加孔隙率的模板来形成超低电介质膜的方法
公开(公告)号：US20050227502A1
公开(公告)日：2005-10-13
申请号：US11046162
申请日：2005-01-28
申请人： Francimar Schmitt , Hichem M'Saad
发明人： Francimar Schmitt , Hichem M'Saad
IPC分类号： H01L21/312 , H01L21/316 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76825 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3122 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047
摘要： Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.
摘要翻译：可以通过化学气相沉积含有硅的组分和具有不稳定基团的大的含硅的致孔剂来形成超低K纳米孔隙介电膜。根据本发明的一个实施方案，可以通过三甲基硅烷（含硅组分）和α-萜品烯（非含硅组分）之间的氧化反应形成低K纳米多孔膜。根据本发明的某些实施方案，氧化剂可以包括除分子氧之外的其它物质，例如原位或远程引入的水蒸气，然后暴露于RF能量以产生反应性离子物质。

114. 发明申请

US20050214457A1 Deposition of low dielectric constant films by N2O addition 审中-公开
标题翻译：通过N2O添加沉积低介电常数膜
公开(公告)号：US20050214457A1
公开(公告)日：2005-09-29
申请号：US10812717
申请日：2004-03-29
申请人： Francimar Schmitt , Kimberly Branshaw , Padmanabhan Krishnaraj , Hichem M'Saad
发明人： Francimar Schmitt , Kimberly Branshaw , Padmanabhan Krishnaraj , Hichem M'Saad
IPC分类号： C23C16/40 , C23C16/56 , H01L21/312 , H01L21/316 , C23C16/00
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/3122
摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.
摘要翻译：一种沉积低介电常数膜的方法包括：向室内提供包含环状有机硅氧烷和N 2 O 2的气体混合物作为氧化气体，并将RF功率施加到气体混合物以沉积低介电常数电影。气体混合物还可以包括氧和/或直链烃。在一个方面，气体混合物包括N 2 O 3和氧气作为氧化气体，并且N 2 O 2的流量与总体流速的比率 N 2 O，氧在约0.1至约0.5之间。

115. 发明授权

US06926926B2 Silicon carbide deposited by high density plasma chemical-vapor deposition with bias 失效
标题翻译：通过高密度等离子体化学气相沉积法沉积碳化硅
公开(公告)号：US06926926B2
公开(公告)日：2005-08-09
申请号：US09953685
申请日：2001-09-10
申请人： Seon-Mee Cho , Hichem M'Saad , Farhad Moghadam
发明人： Seon-Mee Cho , Hichem M'Saad , Farhad Moghadam
IPC分类号： C23C16/32 , C23C16/507 , H01L21/314 , C23C16/30
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/507 , H01L21/02274 , H01L21/314
摘要： A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.
摘要翻译：将SiC基层沉积在具有约1和100Ωcm之间的电阻率的基底上。基板设置在处理室中。具有含硅气体和含烃气体的气体混合物流入处理室。从等离子体产生具有大于约10 11 /离子/ cm 3的离子密度的高密度等离子体。将大约0.65和1.30W / cm 2之间的小的电偏压施加到基底上。低偏压补偿了当沉积SiC基层时产生意外的冷却，但是足够低以使氢的注入最小化。

116. 发明授权

US06803325B2 Apparatus for improving barrier layer adhesion to HDP-FSG thin films 失效
标题翻译：用于改善与HDP-FSG薄膜的屏障层粘附性的装置
公开(公告)号：US06803325B2
公开(公告)日：2004-10-12
申请号：US10120713
申请日：2002-04-10
申请人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
发明人： Hichem M'Saad , Dana Tribula , Manoj Vellaikal , Farhad Moghadam , Sameer Desai
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31629
摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.
摘要翻译：在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。引入Ar来促进气体分解。所有四种气体都用于沉积大部分FSG膜。在沉积FSG膜的界面部分期间不使用SiH4。如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

117. 发明授权

US06713390B2 Barrier layer deposition using HDP-CVD 失效
标题翻译：使用HDP-CVD进行阻挡层沉积
公开(公告)号：US06713390B2
公开(公告)日：2004-03-30
申请号：US10194398
申请日：2002-07-12
申请人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
发明人： Hichem M'Saad , Seon Mee Cho , Dana Tribula
IPC分类号： H01L2144
CPC分类号： C23C16/325 , H01L21/314 , H01L21/3146 , Y10S438/931
摘要： A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.
摘要翻译：提供了一种使用包括含烃气体和含硅气体的气体混合物在基板上沉积阻挡层的方法。将气体混合物提供到处理室，并用于形成用于沉积阻挡层的等离子体。阻挡层以小于500埃的厚度沉积。合适的含烃气体包括烷烃，合适的含硅气体包括硅烷。

118. 发明授权

US08753989B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08753989B2
公开(公告)日：2014-06-17
申请号：US13365229
申请日：2012-02-02
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.
摘要翻译：沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线辐射。

119. 发明授权

US08591699B2 Method and system for supplying a cleaning gas into a process chamber 有权
公开(公告)号：US08591699B2
公开(公告)日：2013-11-26
申请号：US13676820
申请日：2012-11-14
申请人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

120. 发明授权

US08445075B2 Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics 有权
标题翻译：最小化湿法蚀刻底切的方法，并提供极低k（k <2.5）电介质的孔密封
公开(公告)号：US08445075B2
公开(公告)日：2013-05-21
申请号：US12975833
申请日：2010-12-22
申请人： Huiwen Xu , Mei-Yee Shek , Li-Qun Xia , Amir Al-Bayati , Derek Witty , Hichem M'Saad
发明人： Huiwen Xu , Mei-Yee Shek , Li-Qun Xia , Amir Al-Bayati , Derek Witty , Hichem M'Saad
IPC分类号： B05D3/10
CPC分类号： C23C16/308 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.
摘要翻译：提供了在基板上处理膜的方法。在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层来从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。

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