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111. 发明专利

JPS6167237A Apparatus for detecting defective pattern 失效
标题翻译：检测有缺陷的图案的装置
公开(公告)号：JPS6167237A
公开(公告)日：1986-04-07
申请号：JP18789984
申请日：1984-09-10
申请人： Hitachi Ltd
发明人： SUDA TADASHI , KIMURA SHIGEJI , HASE SHINOBU , MUNAKATA TADASUKE , KONAME KANJI , ITO YOSHITOSHI , NAGATOMO HIROTO , TANIGUCHI YUZO
IPC分类号： G01B11/30 , G01N21/956 , H01L21/26 , H01L21/66
CPC分类号： H01L21/26 , G01N21/956
摘要： PURPOSE:To assure the correct selection of defectively processed patterns, by providing an abnormal direction detecting means comprising a photodetecting system having a large light-receiving surface and a defect judging means for judging if an abnormal direction signal indicates a real defect or not based on a signal from a normal pattern detection means. CONSTITUTION:IF the sum of four signals of abnormal directions is larger than a threshold value equivalent to the signal level relating to the rounding of corners, such pattern is always determined as defective. If the sum is equivalent to the threshold value the second signal eab from the top is selected from the four abnormal direction signals by a first signal selection circuit 47. Among four normal signals, the second signal e' from the bottom is selected by a second signal selection circuit 49. This signal e' is multiplied by (1+alpha) to obtain eno. The signals eab and eno are compared by a value comparing circuit 50. If eab> eno, the pattern is determined as defective. A pulse detected by a pulse detection circuit 46 is allowed to pass through the logic judging circuit 51 and to become a defect signal only when it is judged defective by the adding circuit 48 or the value comparing circuit 50.
摘要翻译：目的：为了确保正确选择缺陷处理的图案，通过提供一种异常方向检测装置，包括具有大的光接收表面的光电检测系统和缺陷判断装置，用于根据来自正常图案检测装置的信号。构成：如果异常方向的四个信号的总和大于等于与角舍入相关的信号电平的阈值，则这种模式总是被确定为有缺陷的。如果和等于阈值，则通过第一信号选择电路47从四个异常方向信号中选出来自顶部的第二信号eab。在四个正常信号中，从第二个信号选择第二信号e' 信号选择电路49.该信号e'乘以（1 +α）以获得eno。信号eab和eno通过值比较电路50进行比较。如果eab> eno，则将图案确定为有缺陷的。由脉冲检测电路46检测到的脉冲被允许通过逻辑判断电路51，并且只有当加法电路48或值比较电路50被判定为有缺陷时才成为缺陷信号。

112. 发明专利

JPS6144437A Device for measuring semiconductor characteristic 失效
标题翻译：用于测量半导体特性的器件
公开(公告)号：JPS6144437A
公开(公告)日：1986-03-04
申请号：JP15221685
申请日：1985-07-12
申请人： Hitachi Ltd
发明人： HONMA NORIAKI , MUNAKATA TADASUKE
IPC分类号： G01R31/26 , H01L21/66
摘要： PURPOSE: To enable the non-contact and non-breakdown measurement of the lifetime of minority carriers by a method wherein the difference in phase between the modulation frequency of light is detected by leading out a photo voltage generated in a semiconductor sample by irradiating this sample with a modulated light beam.
CONSTITUTION: A clear electrode 3 is arranged in opposition to an Si wafer 1, and a photoelectromotive voltage generated in the wafer 1 is picked up by capacitance coupling. A beam emitted from a light source 8 is modulated in intensity by a modulator 7, partly split by a beam splitter 6, and converted into electric signals by a photoelectric converter 9. The other part of light transmitting through the splitter 6 is reflected on a reflection mirror and made to irradiate the sample of Si wafer 1 through a lens 4. The phase of the photo voltage generated between electrodes 2 and 3 is detected by a phase meter 10 as the relative ratio to the output signal of the converter 9, and then displayed by a signal processing circuit 11 in output as the lifetime of minority carriers.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过一种方法来实现少数载流子寿命的非接触和非击穿测量，其中通过照射该样品来检测在半导体样品中产生的光电压的光调制频率之间的相位差具有调制光束。构成：与Si晶片1相对配置透明电极3，通过电容耦合拾取在晶片1中产生的光电动势电压。从光源8发射的光束被调制器7强度地调制，部分地被分束器6分离，并由光电转换器9转换成电信号。通过分光器6传输的光的另一部分被反射在反射镜并通过透镜4照射Si晶片1的样品。电极2和3之间产生的光电压的相位由相位计10检测为与转换器9的输出信号的相对比，并且然后由输出的信号处理电路11显示为少数载波的寿命。

113. 发明专利

JPS60250640A TEMPERATURE MEASURING DEVICE BY FLUORESCENT LIGHT 失效
公开(公告)号：JPS60250640A
公开(公告)日：1985-12-11
申请号：JP10637284
申请日：1984-05-28
申请人： HITACHI LTD
发明人： TAKAHASHI SATOSHI , HONMA NORIAKI , KIMURA SHIGEJI , MUNAKATA TADASUKE
IPC分类号： H01L21/66
摘要： PURPOSE:To measure temperature distribution in high resolution and sensitivity without contact by emitting a laser light to a photoresist coated thinly on an IC, and corresponding the variation in the fluorescent light intensity from the resist itself to the variation in the temperature. CONSTITUTION:A laser light 11 generated from a generator 1 is enlarged via 2 to a thick laser light, an optical path is bent by a mirror 3 for reflecting the laser wavelength, the light is focused by a lens 4 at a focal position to approx. mum degree to emit a sample 5. The fluorescent light 13 emitted from the sample and the laser reflected light are formed through the lens 4 to parallel light beam, separated by the mirror 3, the passed light is led through a fluorescent filter 7 and a condensing lens 8 to a detector 9, and analyzed by a signal processor 10. When a portion locally heated is presented on a photoresist on the substrate, the fluorescent light intensity decreases near the portion. With this configuration, since the photoresist is used, influence of impurity diffusion can be eliminated, and the position resolution of temperature distribution can be set to 1mum or lower by selecting the laser light. Since the photoresist stores the information corresponding to the received temperature, it can be analyzed later.

114. 发明专利

JPS60241008A SCANNING PHOTON MICROSCOPE 失效
公开(公告)号：JPS60241008A
公开(公告)日：1985-11-29
申请号：JP9644384
申请日：1984-05-16
申请人： HITACHI LTD
发明人： KONAME KANJI , MUNAKATA TADASUKE
IPC分类号： G02B21/00
摘要： PURPOSE:To measure the wavelength dependency of the effect distribution of light irradiation easily and efficiently by using a light source which changes wavelength composition as a light beam generating means. CONSTITUTION:Light sources 1-1 and 1-2 which differ in wavelength composition are driven at the same time and light intensity modulators 13-1 and 13-2 impose intensity modulation on light beams from the light sources. Effect detectors 6-1 and 6-2 detect effect signals with the same frequencies as modulation frequencies of the modulators 13-1 and 13-2 and the detected signals are displayed on image display devices 7-1 and 7-2 as gradational images. The effect distribution images formed with two light beams differing in wavelength composition are obtained at the same time through this constitution and an efficient measurement is taken.

115. 发明专利

JPS60100449A SEMICONDUCTOR MEASURING DEVICE 失效
公开(公告)号：JPS60100449A
公开(公告)日：1985-06-04
申请号：JP21850084
申请日：1984-10-19
申请人： HITACHI LTD
发明人： HONMA NORIAKI , MUNAKATA TADASUKE , TAKAMI KATSUMI
IPC分类号： G01R31/26 , G01N21/956 , H01L21/66
摘要： PURPOSE:To obtain a simple and inexpensive device for measuring the lifetime of minority carrier in a silicon wafer in noncontact by detecting the photovoltaic power produced upon emitting of a light by the variation in a potential by the capacitive coupling of a transparent electrode with the silicon wafer. CONSTITUTION:A light emitting diode 3 emits a light in the order of sequentially generating the light from the end of an optical fiber 4 opposed to a silicon wafer 1 in a direction parallel to the paper surface, thereby performing the primary scanning. The fiber 4 emits the wafer 1 as a spot light source to generate an electromotive force in an ultrafine region. The light is AC-modulated, and even if a transparent electrode 5 is separated from the wafer 1, the electromotive force is externally produced readily by the capacitive coupling. When the phase difference between the voltage of a power source 8 and a signal voltage is measured by a phase detector, the value of the lifetime of the minority carrier in the wafer can be measured in noncontact.

116. 发明专利

JPS60100448A PHOTOVOLTAGE IMAGE FORMING DEVICE 失效
公开(公告)号：JPS60100448A
公开(公告)日：1985-06-04
申请号：JP20825984
申请日：1984-10-05
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE , KOUNO HIDEKI
IPC分类号： G01R31/26 , G01R31/302 , H01L21/66 , H01L31/00
摘要： PURPOSE:To improve the decrease of the resolution due to the increase in the diffusing length and the increase of a background signal by secondarily differentiating a video signal obtained on the basis of a signal generated from a semiconductor sample by emitting an optical beam to the sample, and forming a scanning image with the two differentiated signals as an intensity modulation signal. CONSTITUTION:When a semiconductor sample 1 to be observed is interposed in a sandwich state between a transparent electrode 3 and a metal electrode 4 through a transparent spacer 2 and an optical beam 5 is emitted through the electrode 3, a photovoltage is generated between the front surface and the back surface of the sample 1. When the beam 5 is pulsated, the photovoltage becomes a pulsating state. Accordingly, even if the electrode is not formed directly on the surface of the semiconductor, the photovoltage can be detected by the electrode 3 through an electric capacity formed by the spacer. The detected photovoltage is introduced to a detecting amplifier 6, and supplied to a cathode ray tube 7 for forming an image with the voltage as a DC signal. It becomes the output of the detecting amplifier 6. So-called video signal V is secondarily differentiated, and the secondary differentiated signal is supplied as an intensity modulation signal Z to a CRT7 through an intensity modulation amplifier 8.

117. 发明专利

JPS59229519A SCANNING PHOTON MICROSCOPE 失效
公开(公告)号：JPS59229519A
公开(公告)日：1984-12-24
申请号：JP9258484
申请日：1984-05-09
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE , USAMI KATSUHISA
IPC分类号： G01N23/227 , G02B21/00 , H01J37/28
摘要： PURPOSE:To permit detection of the temp. distribution on the surface of an object to be observed and easy analysis of a defect accident with high resolving power by scanning the surface of said object with a photon beam and detecting the photoelectron from the object. CONSTITUTION:The electron beam 6 from an electron gun 5 is converted to pulses by a combination of a pulse power source 26, a blanking plate 7 and a blanking aperture 8. The pulses are converged by an electron lens 9 and are irradiated onto a plate 11 on which a fluorescent material 11'is coated. The photon beam 13 generated by the plate 11 is converged by a lens 12 and is irradiated to a solid state circuit element 14. The scanning of the beam 13 is accomplished by deflecting the beam 6 with a coil 10. When the element 14 is locally heated owing to a short circuit accident or the like, a radiation of photoelectron arises and the output signal from a detector 19 is supplied via a signal processing circuit to a display tube 27, by which the temp. distributing condition is made visible.

118. 发明专利

JPS59178739A Device for measuring carrier mobility 失效
标题翻译：用于测量载波移动性的设备
公开(公告)号：JPS59178739A
公开(公告)日：1984-10-11
申请号：JP5241183
申请日：1983-03-30
申请人： Hitachi Ltd
发明人： HONMA NORIAKI , MUNAKATA TADASUKE
IPC分类号： G01N27/00 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To make it possible to perform measurement at a surface resolution of several hundred mum non-destructively without contact, when the carrier mobility in a semiconductor sample is measured, by utilizing photovoltaic effect. CONSTITUTION:A semiconductor sample to be measured 5 is mounted on a metallic sample table 4, which also serves a role of an electrode. A transparent electrode is provided at the lower surface of a glass plate 7, and the glass plate 7 is arranged over the sample 5 with an interval of 100mum or less being provided. Thus, electric capacity coupling is formed between the surface of the sample 5 and the plate 7. Output light from a variable wavelength laser 8 such as a coloring matter laser is inputted to a light detector 14 through beam splitters 10 and 10'. The output signal from the detector 14 is inputted to a microcomputer 22 through an amplifier 14' and interface 21. At the same time, the output light, which is transmitted through the splitter 10, is projected on the surface of the sample 5 through a reflecting mirror 11 and a lens 12. The value the yielded electric capacity coupling is amplified by a lock in amplifier 17 and inputted to the microcomputer 22 by way of an A/D converter 18 and the interface 21. By using the capacity by optical coupling, mobility is measured.
摘要翻译：目的：通过利用光电效应，在测量半导体样品中的载流子迁移率时，可以非接触地以数百微米的表面分辨率进行测量。构成：待测量的半导体样品5安装在金属样品台4上，其也起电极的作用。在玻璃板7的下表面设有透明电极，玻璃板7设置在样品5上，间隔100μm以下。因此，在样品5的表面和板7之间形成电容耦合。来自诸如着色激光的可变波长激光器8的输出光通过分束器10和10'输入到光检测器14。来自检测器14的输出信号通过放大器14'和接口21输入到微计算机22.同时，通过分离器10传输的输出光通过一个反射镜11和透镜12.产生的电容耦合的值通过放大器17中的锁定被放大，并通过A / D转换器18和接口21输入到微型计算机22.通过光耦合使用容量，测量移动性。

119. 发明专利

JPS59155941A Electron-beam inspection device 失效
标题翻译：电子束检测装置
公开(公告)号：JPS59155941A
公开(公告)日：1984-09-05
申请号：JP2950383
申请日：1983-02-25
申请人： Hitachi Ltd
发明人： HOSOKI SHIGEYUKI , ICHIHASHI MIKIO , WADA YASUO , MUNAKATA TADASUKE , HONDA YUKIO
IPC分类号： G01B15/00 , G01B15/08 , H01J37/28 , H01L21/66
CPC分类号： H01L22/00 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To inspect the size and number of a film defect by providing a focusing means, a defelection means, a deceleration means decelerating an insulating film up to a value which does not transmit the insulating film equivalently, an information signal display means corresponding to the defect, etc. when the insulating film of a minute pattern formed on a metal or a semiconductor substrate is inspected by using electron beams. CONSTITUTION:An electric field-radiation cathode 11 is mounted into an electrooptic system mirror body 16 with an evacuating means 17, and electron beams from the cathode 11 are passed in a beam focusing means 13 through a diaphragm hole 12a formed to an anode 12, and irradiated onto an insulating film 2 of minute patterns on a sample 32 placed on a sample base 43. An auxiliary electrode 9 consisting of a metallic mesh is fitted on the sample 32 at that time, and fixed voltage is applied to the auxiliary electrode to decelerate the speed of beams up to a predetermined value. A pointed needle 11a consisting of a single crystal W wire and a filament 11b are fitted to the cathode 11, field radiation at low voltage is enabled, and secondary electrons are detected by a detector 22 and a defect is displayed to a pattern generator 31.
摘要翻译：目的：通过提供聚焦装置来检查胶片缺陷的尺寸和数量，失败装置，减速装置将绝缘膜减速至等于不传输绝缘膜的值，对应于信息信号显示装置通过使用电子束检查在金属或半导体基板上形成的微小图案的绝缘膜时的缺陷等。构成：将电场辐射阴极11安装在具有排气装置17的电光系统镜体16中，并且来自阴极11的电子束通过形成在阳极12上的隔膜孔12a通过光束聚焦装置13，并照射到放置在样品基体43上的试样32上的微小图案的绝缘膜2.此时，由金属网构成的辅助电极9配合在样品32上，向辅助电极施加固定电压将光束的速度减速到预定值。将由单晶W线和灯丝11b构成的尖针11a嵌入阴极11，能够进行低电压的场辐射，二次电子被检测器22检测出，故障被显示给图案发生器31。

120. 发明专利

JPS58108752A MEASURING DEVICE OF SEMICONDUCTOR CHARACTERISTICS 失效
公开(公告)号：JPS58108752A
公开(公告)日：1983-06-28
申请号：JP20693181
申请日：1981-12-23
申请人： HITACHI LTD
发明人： HONMA NORIAKI , MUNAKATA TADASUKE
IPC分类号： H01L21/66
摘要： PURPOSE:To measure the life of minor carriers from phase difference in photoelectric voltage signals by a method wherein a semiconductor sample is radiated alternately from a photo beam subject to long wave length pulsation minimizing the photo absorption coefficient remarkably and another photo beam subject to short wave length pulsation maximizing the photo absorption coefficient remarkably. CONSTITUTION:The figure represents the results of frequency characteristics of photoelectric voltage phase measured by a characteristics measuring device. The curves A and B represent the results of measurement respectively in case of the long wave length light source 5' only and the short wave length light source 5 only while the curve C represents the difference in phase between the curves A and B. However the phase fluctuation due to the life tau of minor carriers is not represented sufficiently due to the narrow range of frequencies measured. As evident so far, it is unknown yet by the data of the curve A only which phase value making reference to which data is related to the life fluctuation of the minor carriers. Therefore, it is evident that after measuring the phase difference as shown in the curve C and eliminating the influence thereof, these errors may be remarkably decreased by means of measuring the phase fluctuation only due to the life tau of the minor carriers.

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