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    • 112. 发明专利
    • DETERIORATION MEASURING APPARATUS FOR PHOTOSENSITIVE BODY
    • JPH0238852A
    • 1990-02-08
    • JP18890788
    • 1988-07-28
    • FUJITSU LTD
    • UEHARA YUJIKIMURA MASATOSHI
    • G01N27/00G03G5/00G03G21/00
    • PURPOSE:To achieve an accurate replacement of a photosensitive drum by arranging a means for measuring a surface potential of a photosensitive body by a XTOF method comprising an exposure means and a surface potential detection means, a means of analyzing the results thereof and a means of storing the results of analysis. CONSTITUTION:A photosensitive drum 1 is charged with -several hundred V by a corotron 24, rotated and fixed in such a manner that a charging with -several hundred V occurs at the position of a surface potential probe 14. Then, from above the transparent probe 14, the drum is irradiated with a beam light from a semiconductor laser 20 as expanded with a beam expander 21. Attenuation of a surface potential following the laser irradiation is measured with the probe 14 and a surface potential meter 15. Here, a response speed of the potential meter 15 is set to be shorter sufficiently than a running time of a light carrier. A signal from the potential meter 15 is applied to a degree of deterioration calculator 17 to calculate a valve of an attenuation of the surface potential, thereby enabling the learning of a timing of changing the photosensitive drum.
    • 113. 发明专利
    • PRODUCTION OF ELECTROPHOTOGRAPHIC SENSITIVE BODY
    • JPS61285458A
    • 1986-12-16
    • JP12905385
    • 1985-06-12
    • FUJITSU LTD
    • UEHARA YUJIARAKI MAKOTOOSAME HIROSHIKIYOTA KOHEI
    • G03G5/08G03G5/082
    • PURPOSE:To stabilize electrostatic charge potential and to improve characteristics by forming a charge blocking layer and photoconductive layer by using the reactive gas of the same component under the specific gaseous pressure which is varied in the stage of forming the respective films. CONSTITUTION:A conductive base 1 consisting of Al is provided on a susceptor 12 provided in a vessel 11 and an electrode 13 facing the susceptor 12 is provided. The inside of the vessel 11 is evacuated to 10-6 Torr vacuum degree by using an evacuation pump 15. Gaseous disilane (Si2H6) added with an extremely slight amt. of gaseous diborane (B2H6) is introduced at 10 sccs flow rate through a gas introducing pipe 16 into the vessel 11 until the pressure in the vessel attains 1.0 Torr. A high-frequency voltage is impressed between the susceptor 12 and the electrode 13 by a high-frequency power source 17 under such conditions to generate a glow discharge between the susceptor 12 and the electrode 13 and to decompose the gas in the vessel 11, thereby forming the charge blocking layer 2 on the base 1. The pressure of the reactive gas in the vessel 11 is decreased to 0.2 Torr and the photoconductive layer 3 is formed on the layer 2 under the similar conditions.
    • 114. 发明专利
    • Electrophotographic photosensitive body
    • 电子感光体
    • JPS6161169A
    • 1986-03-28
    • JP18320984
    • 1984-08-31
    • Fujitsu Ltd
    • UEHARA YUJIKIYOTA KOHEIARAKI MAKOTOOTSUKA KEITA
    • G03G5/08G03G5/14
    • G03G5/08
    • PURPOSE:To improve an electrification characteristics, and also to prevent a memory phenomenon by providing a photosensitive layer of amorphous silicon hydride on a conductive supporting body, and forming a Schottky barrier on an interface of its supporting body and the photosensitive layer. CONSTITUTION:A conductive supporting body 21 (11) consisting of Mo, etc. in a vacuum chamber 21 is rotated by a motor 24, and also heated by a heater 25. A disilane gas is led into the chamber 21 through a valve 28 from a cylinder 26, glow discharge occurs by turning on a high-frequency power between discharge electrodes 32 having many gas jet holes 31 by a high-frequency power source 30, and an amorphous silicon hydride photosensitive layer 12 is formed. In this case, Shottky barrier 14 is formed on an interface of the photosensitive layer 12 and the supporting body 11. Subsequently, an ammonia gas is led into the chamber 21 together with the disilane gas, and a photective layer 13 constituted of silicon nitride is formed. In this way, an electrification characteristic is improved, and also a memory phenomenon is prevented.
    • 目的:为了提高通电特性,并且还通过在导电性支撑体上设置非晶硅氢化物的感光层来防止记忆现象,并且在其支撑体和感光层的界面上形成肖特基势垒。 构成:由真空室21中的Mo等构成的导电性支撑体21(11)由马达24旋转,并由加热器25进行加热。乙硅烷气体通过阀28从阀28引导到室21内 气缸26通过由高频电源30接通具有多个气体喷射孔31的放电电极32之间的高频功率而形成辉光放电,形成非晶硅氢化物感光层12。 在这种情况下,在感光层12和支撑体11的界面上形成有肖特基势垒14.随后,氨气与乙硅烷气体一起被引入到室21中,由氮化硅构成的喷射层13是 形成。 以这种方式,提高了通电特性,并且防止了记忆现象。