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111. 发明授权

US08765537B2 Metal gate fill by optimizing etch in sacrificial gate profile 有权
标题翻译：通过优化牺牲栅极剖面中的蚀刻来进行金属栅极填充
公开(公告)号：US08765537B2
公开(公告)日：2014-07-01
申请号：US13606035
申请日：2012-09-07
申请人： Man Fai Ng , Bin Yang
发明人： Man Fai Ng , Bin Yang
IPC分类号： H01L21/338
CPC分类号： H01L21/28114 , H01L29/42376 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A high-k metal gate electrode is formed with reduced gate voids. An embodiment includes forming a replaceable gate electrode, for example of amorphous silicon, having a top surface and a bottom surface, the top surface being larger than the bottom surface, removing the replaceable gate electrode, forming a cavity having a top opening larger than a bottom opening, and filling the cavity with metal. The larger top surface may be formed by etching the bottom portion of the amorphous silicon at greater temperature than the top portion, or by doping the top and bottom portions of the amorphous silicon differently such that the bottom has a greater lateral etch rate than the top.
摘要翻译：形成具有减小的栅极空隙的高k金属栅电极。一个实施例包括形成可替换的栅电极，例如具有顶表面和底表面的非晶硅，顶表面大于底表面，去除可更换的栅电极，形成具有大于底部开口，并用金属填充空腔。可以通过在比顶部更高的温度下蚀刻非晶硅的底部，或者通过不同地掺杂非晶硅的顶部和底部来形成较大的顶表面，使得底部具有比顶部更大的侧向蚀刻速率。

112. 发明授权

US08729017B2 Glucagon/GLP-1 receptor co-agonists 有权
标题翻译：胰高血糖素/ GLP-1受体共激动剂
公开(公告)号：US08729017B2
公开(公告)日：2014-05-20
申请号：US13494480
申请日：2012-06-12
申请人： Richard D. DiMarchi , David L. Smiley , Bin Yang
发明人： Richard D. DiMarchi , David L. Smiley , Bin Yang
IPC分类号： A61K38/26 , A61P3/10 , C07K14/605
CPC分类号： C07K14/605 , A61K38/00 , A61K47/60 , C07K2319/00 , G01N33/74 , G01N2333/605 , G01N2800/042 , G01N2800/085 , G01N2800/2821 , G01N2800/2835
摘要： Provided herein are peptides and variant peptides that exhibit enhanced activity at the GLP-1 receptor, as compared to native glucagon.
摘要翻译：本文提供了与天然胰高血糖素相比显示增强的GLP-1受体活性的肽和变体肽。

113. 发明授权

US08632152B2 Method and device for printing image 失效
标题翻译：打印图像的方法和设备
公开(公告)号：US08632152B2
公开(公告)日：2014-01-21
申请号：US12920267
申请日：2009-02-27
申请人： Jinghua Shen , Yapeng Chen , Bin Yang , Lidong Wang
发明人： Jinghua Shen , Yapeng Chen , Bin Yang , Lidong Wang
IPC分类号： B41J29/38 , B41J29/393 , B41J2/15
CPC分类号： G06K15/02 , H04N1/40068
摘要： Disclosed is a method for printing an image, comprising a step of rasterizing an image to be printed in view of a first resolution to generate a first data bitmap; a step of splitting the first data bitmap according to a ratio of the first resolution to a second resolution to generate second data bitmaps; and a step of outputting the second data bitmaps to a printer with the second resolution for printing. Disclosed is also a device for printing images. The method and device for printing an image may solve the problem in the prior art that the definition of an image printed from a printer is too low and improve the definition of an image printed from a printer.
摘要翻译：公开了一种打印图像的方法，包括：根据第一分辨率光栅化要打印的图像以生成第一数据位图的步骤; 根据第一分辨率与第二分辨率的比率分割第一数据位图以产生第二数据位图的步骤; 以及将第二数据位图输出到具有用于打印的第二分辨率的打印机的步骤。公开了一种用于打印图像的装置。用于打印图像的方法和设备可以解决现有技术中从打印机打印的图像的定义太低并且提高从打印机打印的图像的定义的问题。

114. 发明申请

US20140002864A1 Amplification Modulation Screening Method And Apparatus 有权
标题翻译：放大调制筛选方法及装置
公开(公告)号：US20140002864A1
公开(公告)日：2014-01-02
申请号：US13996907
申请日：2011-12-23
申请人： Haifeng Li , Bin Yang
发明人： Haifeng Li , Bin Yang
IPC分类号： H04N1/405
CPC分类号： H04N1/4058 , G06T11/40 , G09G3/2011 , G09G2300/0426 , G09G2300/0443 , G09G2300/0452 , H04N1/4055
摘要： An amplitude modulation screening method is provided. The method comprises a step of utilizing regular hexagon screen dots to form a threshold matrix for amplitude screening. In embodiments of the present application, an amplitude modulation screening apparatus is also provided. The apparatus may comprise a matrix module configured to constitute a threshold matrix for amplitude screening using regular hexagon screen dots. Due to the threshold matrix formed with regular hexagon screen dots, the method and apparatus of the present application resolve the problem of the screen dots in the prior art, and improve the printing quality.
摘要翻译：提供了一种幅度调制屏蔽方法。该方法包括利用正六边形屏幕点形成用于振幅筛选的阈值矩阵的步骤。在本申请的实施例中，还提供了幅度调制筛选装置。该装置可以包括矩阵模块，该矩阵模块被配置为使用正六边形屏幕点构成用于振幅筛选的阈值矩阵。由于由正六边形屏幕点形成的阈值矩阵，本申请的方法和装置解决了现有技术中屏幕点的问题，并提高了打印质量。

115. 发明申请

US20130123178A1 GLUCAGON SUPERFAMILY PEPTIDES EXHIBITING NUCLEAR HORMONE RECEPTOR ACTIVITY 有权
标题翻译： GLUCAGON SUPERFAMILY PEPTIDES展示核激素受体活性
公开(公告)号：US20130123178A1
公开(公告)日：2013-05-16
申请号：US13697018
申请日：2011-05-10
申请人： Richard D. DiMarchi , Bin Yang , Brian Finan
发明人： Richard D. DiMarchi , Bin Yang , Brian Finan
IPC分类号： C07K14/72 , C07K14/605
CPC分类号： C07K14/721 , A61K38/26 , A61K47/55 , A61K47/554 , A61K47/64 , C07K14/605 , C07K14/72
摘要： Provided herein are glucagon superfamily peptides conjugated with NHR ligands that are capable of acting at a nuclear hormone receptor. Also provided herein are pharmaceutical compositions and kits of the conjugates of the invention. Further provided herein are methods of treating a disease, e.g., a metabolic disorder, such as diabetes and obesity, comprising administering the conjugates of the invention.
摘要翻译：本文提供了与能够作用于核激素受体的NHR配体缀合的胰高血糖素超家族肽。本文还提供了本发明的缀合物的药物组合物和试剂盒。本文还提供了治疗疾病，例如代谢紊乱（例如糖尿病和肥胖症）的方法，其包括施用本发明的缀合物。

116. 发明申请

US20130007824A1 Match-rule based service message transfer method and system 有权
公开(公告)号：US20130007824A1
公开(公告)日：2013-01-03
申请号：US13581628
申请日：2011-06-24
申请人： Jianhua Kong , Bin Yang , Liming Zhou
发明人： Jianhua Kong , Bin Yang , Liming Zhou
IPC分类号： H04N21/20
CPC分类号： H04N21/25891 , H04L65/4076 , H04N21/25
摘要： The disclosure provides a match-rule based service message transfer method and system in the IPTV, to address the problems in the IPTV message system of message storing and backlog, low push efficiency and poor usability. In the disclosure, match fields are arranged in a set-top box and a service message to be sent, the service message is sent by means of broadcast or multicast, the set-top box performs matching for the match fields based on the match rule, and filters the message. The disclosure avoids sending a service message by means of unicast, increases the push efficiency and can greatly reduce the storage load of offline messages in a message system. The formed message may be sent according to a single or combined policy which depends on a specific service attribute, thereby greatly facilitating the service operation.

117. 发明授权

US08236693B2 Methods of forming silicides of different thicknesses on different structures 有权
标题翻译：在不同结构上形成不同厚度的硅化物的方法
公开(公告)号：US08236693B2
公开(公告)日：2012-08-07
申请号：US11748743
申请日：2007-05-15
申请人： Wen Yu , Paul Besser , Bin Yang , Haijiang Yu , Simon S. Chan
发明人： Wen Yu , Paul Besser , Bin Yang , Haijiang Yu , Simon S. Chan
IPC分类号： H01L21/44
CPC分类号： H01L21/324 , H01L21/28052 , H01L29/66507 , H01L29/78
摘要： The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.
摘要翻译：形成器件的栅极和有源区，并且施加和去除氮化物和氧化物层的交替步骤允许在不同区域暴露硅，同时保持覆盖有氮化物的其它区域中的硅或多晶硅。金属层沉积在暴露的硅或多晶硅上，退火在所选择的暴露区域中形成硅化物层。氧化物层和/或氮化物层从被覆盖区域移除，另一个金属层被沉积。在第二暴露区域上形成一层厚度的硅化物，并在先前的硅化物厚度上形成附加的硅化物厚度来重复退火工艺。

118. 发明申请

US20110230017A1 Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide 有权
标题翻译：用于形成SOI肖特基源/排水装置以控制硅化物的侵蚀和分层的方法
公开(公告)号：US20110230017A1
公开(公告)日：2011-09-22
申请号：US12726736
申请日：2010-03-18
申请人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
发明人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/7839 , H01L29/78654
摘要： A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.
摘要翻译：提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。栅极结构直接形成在第一半导体层上。凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

119. 发明申请

US20110227157A1 ETSOI WITH REDUCED EXTENSION RESISTANCE 有权
标题翻译： ETSOI具有降低的延伸电阻
公开(公告)号：US20110227157A1
公开(公告)日：2011-09-22
申请号：US12726889
申请日：2010-03-18
申请人： Bin Yang , Man Fai Ng
发明人： Bin Yang , Man Fai Ng
IPC分类号： H01L27/12 , H01L21/762 , H01L29/786
CPC分类号： H01L29/78618 , H01L21/76232 , H01L21/76283 , H01L21/84 , H01L27/1203 , H01L27/1211 , H01L29/66477 , H01L29/66545 , H01L29/66628 , H01L29/66772 , H01L29/78 , H01L29/78684 , H01L29/78696
摘要： A semiconductor is formed on an SOI substrate, such as an extremely thin SOI (ETSOI) substrate, with increased extension thickness. Embodiments include semiconductor devices having an epitaxially formed silicon-containing layer, such as embedded silicon germanium (eSiGe), on the SOI substrate. An embodiment includes forming an SOI substrate, epitaxially forming a silicon-containing layer on the SOI substrate, and forming a gate electrode on the epitaxially formed silicon-containing layer. After gate spacers and source/drain regions are formed, the gate electrode and underlying silicon-containing layer are removed and replaced with a high-k metal gate. The use of an epitaxially formed silicon-containing layer reduces SOI thickness loss due to fabrication process erosion, thereby increasing extension thickness and lowering extension resistance.
摘要翻译：在诸如极薄的SOI（ETSOI）衬底的SOI衬底上形成半导体，具有增加的延伸厚度。实施例包括在SOI衬底上具有外延形成的含硅层（例如嵌入硅锗（eSiGe））的半导体器件。实施例包括形成SOI衬底，在SOI衬底上外延形成含硅层，并在外延形成的含硅层上形成栅电极。在形成栅极间隔物和源极/漏极区之后，去除栅电极和下面的含硅层，并用高k金属栅极代替。使用外延形成的含硅层由于制造工艺侵蚀而减少SOI厚度损失，从而增加延伸厚度并降低延伸电阻。

120. 发明授权

US07981903B2 2-[2-{phenylamino}-1H-pyrrolo[2,3-D]pyrimidin-4-yl)amino] benzamide derivatives as IGF-1R inhibitors for the treatment of cancer 有权
标题翻译： 2- [2- {苯基氨基} -1H-吡咯并[2,3-D]嘧啶-4-基）氨基]苯甲酰胺衍生物作为治疗癌症的IGF-1R抑制剂
公开(公告)号：US07981903B2
公开(公告)日：2011-07-19
申请号：US12671960
申请日：2008-08-06
申请人： Stanley Dawes Chamberlain , Felix Deanda, Jr. , Roseanne Gerding , Masaichi Hasegawa , Kevin Kuntz , Huangshu Lei , Yasushi Miyazaki , Naohiko Nishigaki , Samarjit Patnaik , Aniko Redman , John Brad Shotwell , Kirk Stevens , Joseph Wilson , Bin Yang
发明人： Stanley Dawes Chamberlain , Felix Deanda, Jr. , Roseanne Gerding , Masaichi Hasegawa , Kevin Kuntz , Huangshu Lei , Yasushi Miyazaki , Naohiko Nishigaki , Samarjit Patnaik , Aniko Redman , John Brad Shotwell , Kirk Stevens , Joseph Wilson , Bin Yang
IPC分类号： A01N43/90 , A61K31/519 , C07D487/00
CPC分类号： C07D487/04 , C07D487/14
摘要： Novel pyrrolopyrimidines as shown in formula (I): and pharmaceutically acceptable derivatives thereof. The compounds are useful in the inhibition of IGF-1R.
摘要翻译：式（I）所示的新型吡咯并嘧啶及其药学上可接受的衍生物。该化合物可用于抑制IGF-1R。

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