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111. 发明授权

US07901952B2 Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters 失效
标题翻译：通过将M等离子体参数的期望值转换为N室参数的值来等离子体反应器控制
公开(公告)号：US07901952B2
公开(公告)日：2011-03-08
申请号：US11609024
申请日：2006-12-11
申请人： Daniel J. Hoffman , Ezra Robert Gold
发明人： Daniel J. Hoffman , Ezra Robert Gold
IPC分类号： H01L21/302
CPC分类号： H01J37/3299 , H01J37/32174 , H01J37/32935
摘要： The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for respective N chamber parameters. The M plasma parameters are selected from a group including wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass. The N chamber parameters are selected from a group including source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition. The method further includes setting the N chamber parameters to the set of N values.
摘要翻译：本发明涉及通过根据多个等离子体参数的期望值来控制多个室参数来处理等离子体反应器室中的晶片的方法。该方法包括将用于M个等离子体参数的一组M个期望值同时翻译成用于各N个腔室参数的一组N个值。 M等离子体参数从包括晶片电压，离子密度，蚀刻速率，晶片电流，蚀刻选择性，离子能量和离子质量的组中选择。 N室参数选自源功率，偏置功率，室内压力，内部电磁线圈电流，外部电磁线圈电流，内部区域气体流量，外部区域气体流量，内部区域气体组成，外部区域气体组成。该方法还包括将N个室参数设置为N个值的集合。

112. 发明授权

US07883633B2 Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor 有权
标题翻译：在磁场增强等离子体反应器中形成磁场的方法
公开(公告)号：US07883633B2
公开(公告)日：2011-02-08
申请号：US11612129
申请日：2006-12-18
申请人： Roger A. Lindley , Scott A. Hogenson , Daniel J. Hoffman
发明人： Roger A. Lindley , Scott A. Hogenson , Daniel J. Hoffman
IPC分类号： C23F1/00
CPC分类号： H01J37/3266 , H01J37/32623 , H01J37/32688
摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.
摘要翻译：本文提供了用于在处理室中旋转磁场的方法。在一个实施例中，用于旋转处理室中的磁场的方法包括形成具有初级形状的磁场; 将主要形状改变为至少两个顺序的过渡形状; 并将过渡形状改变为旋转的主要形状。任选地，在每个步骤中，磁场可以保持在大致恒定的量级。可选地，施加到一个或多个磁场产生线圈的最大一个电流等于零或在任何两个相邻步骤之间具有其极性反转。

113. 发明申请

US20100314046A1 PLASMA REACTOR WITH A MULTIPLE ZONE THERMAL CONTROL FEED FORWARD CONTROL APPARATUS 有权
标题翻译：具有多区域热控制进料控制装置的等离子体反应器
公开(公告)号：US20100314046A1
公开(公告)日：2010-12-16
申请号：US12855670
申请日：2010-08-12
申请人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, JR. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, JR. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： H01L21/3065
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和切割器膨胀阀的制冷回路，用于控制冷却剂通过内部和外部蒸发器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

114. 发明授权

US07768765B2 Substrate support having heat transfer system 有权
标题翻译：具有传热系统的基板支架
公开(公告)号：US07768765B2
公开(公告)日：2010-08-03
申请号：US11683994
申请日：2007-03-08
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H01T23/00
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.
摘要翻译：用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。在一个版本中，频道翻倍翻转自己。

115. 发明申请

US20090314433A1 CATHODE WITH INNER AND OUTER ELECTRODES AT DIFFERENT HEIGHTS 有权
标题翻译：在不同高度的内部和外部电极的阴极
公开(公告)号：US20090314433A1
公开(公告)日：2009-12-24
申请号：US12144463
申请日：2008-06-23
申请人： Daniel J. Hoffman , Douglas A. Buchberger, JR. , Semyon L. Kats , Dan Katz
发明人： Daniel J. Hoffman , Douglas A. Buchberger, JR. , Semyon L. Kats , Dan Katz
IPC分类号： C23F1/00 , H01L21/683
CPC分类号： H01L21/6833
摘要： An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.
摘要翻译：用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。上电极的外周与环形电极的内周重叠。在一个实施例中，上电极和环形电极通过钼通孔电耦合。在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。

116. 发明申请

US20090298287A1 METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权
标题翻译：通过同步低功率射频发生器的同步调制的等离子体负载阻抗调制方法
公开(公告)号：US20090298287A1
公开(公告)日：2009-12-03
申请号：US12129024
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H01L21/3065 , H01L21/3205 , C23C16/505 , H01L21/31
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/321 , H01J37/32183 , H01J37/32935
摘要： A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
摘要翻译：提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。

117. 发明申请

US20090294061A1 PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权
标题翻译：具有等离子体负载阻抗调节的等离子体反应器通过同步低功率射频发生器的同步调制实现工程过渡
公开(公告)号：US20090294061A1
公开(公告)日：2009-12-03
申请号：US12128926
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23C16/44 , C23F1/00
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
摘要翻译：使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。

118. 发明申请

US20090250432A1 Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields 审中-公开
标题翻译：通过不同电磁场的时间加权叠加控制等离子体分布均匀性的方法
公开(公告)号：US20090250432A1
公开(公告)日：2009-10-08
申请号：US12082074
申请日：2008-04-07
申请人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
发明人： Daniel J. Hoffman , Ezra Robert Gold , Douglas H. Burns , Douglas A. Buchberger, JR. , Michael Charles Kutney , Jang Gyoo Yang
IPC分类号： H01L21/3065 , C23C16/513
CPC分类号： C23C16/503 , H01J37/32091 , H01J37/321 , H01J37/32935
摘要： A method of processing a workpiece in a chamber of a plasma reactor having a set of plural electromagnet coils includes selecting plural predetermined plasma density distributions relative to a workpiece surface, the predetermined plasma density distributions corresponding to different sets of D.C. currents in the coils, and flowing a process gas into the chamber and generating a plasma in the chamber. The method further includes switching plasma in the chamber between the predetermined plasma density distributions by switching D.C. currents through the coils between the different sets of D.C. currents.
摘要翻译：一种在具有一组多个电磁线圈的等离子体反应器的腔室中处理工件的方法包括：相对于工件表面选择多个预定等离子体密度分布，对应于线圈中的不同DC电流集合的预定等离子体密度分布;以及将工艺气体流入室中并在室中产生等离子体。该方法还包括通过在不同的直流电流组之间切换通过线圈的直流电流来在腔室内切换预定等离子体密度分布之间的等离子体。

119. 发明授权

US07553679B2 Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current 有权
标题翻译：从施加的偏置电压和电流确定等离子体离子密度，晶圆电压，蚀刻速率和晶片电流的方法
公开(公告)号：US07553679B2
公开(公告)日：2009-06-30
申请号：US11508346
申请日：2006-08-23
申请人： Daniel J. Hoffman
发明人： Daniel J. Hoffman
IPC分类号： G01R31/26
CPC分类号： H01J37/32174 , H01J37/32935
摘要： Plasma parameters such as plasma ion density, wafer voltage, etch rate and wafer current in the chamber are determined from external measurements on the applied RF bias electrical parameters such as voltage and current. The method includes sensing RF parameters corresponding to an input impedance, an input current and an input voltage at the input of the impedance match element to a transmission line coupled between the bias generator and the wafer pedestal. The method continues by computing a junction admittance of a junction between the transmission line and the electrode within the wafer pedestal from the input impedance, input current and input voltage and from parameters of the transmission line. The method further includes providing shunt electrical quantities of a shunt capacitance between the electrode and a ground plane, and providing load electrical quantities of a load capacitance between the electrode and a wafer on the pedestal. The method further includes computing at least one of the plasma parameters from the junction admittance, the shunt electrical quantities, the load electrical quantities and a frequency of RF bias power applied to the electrode.
摘要翻译：等离子体参数，例如等离子体离子密度，晶圆电压，蚀刻速率和晶片电流在室内的测量取决于施加的RF偏置电气参数（如电压和电流）的外部测量。该方法包括将阻抗匹配元件输入端的输入阻抗，输入电流和输入电压对应的RF参数传感到耦合在偏置发生器和晶片基座之间的传输线。该方法通过从输入阻抗，输入电流和输入电压以及传输线的参数计算晶片基座内的传输线和电极之间的结的接合导纳而继续。该方法还包括在电极和接地平面之间提供并联电容的分流电量，并且在电极和基座上的晶片之间提供负载电量的负载电容量。该方法还包括从接合导纳，分流电量，负载电量和施加到电极的RF偏置功率的频率来计算等离子体参数中的至少一个。

120. 发明申请

US20090130856A1 METHOD FOR MONITORING PROCESS DRIFT USING PLASMA CHARACTERISTICS 失效
标题翻译：使用等离子体特性监测工艺流程的方法
公开(公告)号：US20090130856A1
公开(公告)日：2009-05-21
申请号：US12355130
申请日：2009-01-16
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： H01L21/3065
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of current and voltage information of a first waveform coupled to a plasma during a plasma process formed on a substrate, obtaining metrics of current and voltage information of a second waveform coupled to the plasma during the plasma process formed on the substrate, the first and second waveforms having different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform, and adjusting the plasma process in response to the determined at least one characteristic of the plasma.
摘要翻译：提供了使用等离子体特性监测过程漂移的方法。在一个实施例中，使用等离子体特性来监测过程漂移的方法包括获得在形成在衬底上的等离子体工艺期间耦合到等离子体的第一波形的电流和电压信息的度量，获得耦合的第二波形的电流和电压信息的度量在形成在衬底上的等离子体工艺期间等离子体，第一和第二波形具有不同的频率，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性，以及响应于所确定的等离子体处理等离子体的至少一个特征。

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