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102. 发明专利

JP4359577B2 The black and white developing the light-sensitive material 有权
公开(公告)号：JP4359577B2
公开(公告)日：2009-11-04
申请号：JP2005176796
申请日：2005-06-16
申请人：富士フイルム株式会社
发明人：康弘吉岡
IPC分类号： G03C1/498
CPC分类号： G03C1/49827 , G03C1/0051 , G03C1/49818 , G03C1/49845 , G03C1/49863 , G03C1/49881 , G03C5/17 , G03C7/3225 , G03C2001/03558 , G03C2200/36 , G03C2200/52 , G03C2200/60 , Y10S430/168
摘要： The present invention provides a black and white photothermographic material including at least a photosensitive silver halide, a non-photosensitive organic silver salt, and a binder on a support, wherein the black and white photothermographic material contains a compound represented by the following formula (1) and at least one compound represented by a formula selected from the group consisting of the following formulae (2), (3), (4), and (5): wherein R 1 , R 2 , R 3 , and R 4 each independently represent a hydrogen atom or a substituent which substitutes for a hydrogen atom on a benzene ring; and R 5 represents an alkyl group, an aryl group, or a heterocyclic group; An image forming method using the black and white photothermographic material and a fluorescent intensifying screen is also provided.

103. 发明专利

JP4070393B2 Negative resist composition 有权
公开(公告)号：JP4070393B2
公开(公告)日：2008-04-02
申请号：JP2000235949
申请日：2000-08-03
申请人：富士フイルム株式会社
发明人：一也上西 , 浩司白川 , 豊阿出川
IPC分类号： G03F7/038 , C08F12/22 , C08K5/00 , C08L25/18 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/168
摘要： A chemical amplification system negative-working resist composition for an electron beam and/or an X-ray, which is excellent in sensitivity and resolution and has a rectangular profile, comprising an alkali-soluble resin having structural units represented by the following general formula (a), a compound generating an acid by irradiation of the electron beam or the X-ray, and a crosslinking agent which initiates crosslinking by the acid:

104. 发明专利

JP4032104B2 Method of forming a high-precision pattern using a soft x-ray, and a manufacturing method of a nano device using the same 有权
公开(公告)号：JP4032104B2
公开(公告)日：2008-01-16
申请号：JP2003527514
申请日：2002-09-12
申请人：ポステックアカデミー−インダストリーファンデーション
发明人：カン，タイ−ヘエ , キム，キ−ジェオン , キム，ボンソオ , ウォンパーク，ジョーン , ホムーン，ジョーン , ラ，ヤン−ヒェ
IPC分类号： G03F7/075 , G03F7/00 , G03F7/004 , G03F7/16 , G03F7/20 , H01L21/027 , H01L21/033
CPC分类号： G03F7/0755 , B81B2201/0214 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y10/00 , B82Y30/00 , G03F7/0045 , G03F7/165 , G03F7/2039 , H01L21/0337 , H01L21/312 , Y10S430/168 , Y10T428/261
摘要： A method for nano-scale high resolution patterning of self-assembled monolayer using soft X-rays is provided. The method involves forming an aromatic imine molecular layer having substituents at its terminal rings on a substrate, selectively cleaving bonds to the subsituents of the aromatic imine molecular layer, and hydrolyzing the aromatic imine molecular layer

105. 发明专利

JP3978571B2 The photoresist overcoat coating composition, and a photoresist pattern forming method using the same 有权
公开(公告)号：JP3978571B2
公开(公告)日：2007-09-19
申请号：JP2000368612
申请日：2000-12-04
申请人：株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人：根圭孔 , 基鎬白 , 載昌鄭 , 珍秀金 , 次元高
IPC分类号： G03F7/11 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , G03F7/11 , Y10S430/168

106. 发明专利

JP2005275283A Positive resist composition for electron beam, euv ray or x ray, and pattern forming method using same 审中-公开
标题翻译：电子束，EUV RAY或X射线的正极性组合物和使用其的图案形成方法
公开(公告)号：JP2005275283A
公开(公告)日：2005-10-06
申请号：JP2004092091
申请日：2004-03-26
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： MIZUTANI KAZUYOSHI
IPC分类号： G03F7/004 , G03F7/033 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/115 , Y10S430/122 , Y10S430/167 , Y10S430/168
摘要： PROBLEM TO BE SOLVED: To provide a performance improving technique in microprocessing of a semiconductor element using an electron beam, an X ray or EUV rays, and to provide a positive resist composition which has high sensitivity and high resolution, and which simultaneously satisfies an excellent pattern shape, line edge roughness, solution contrast, suppression of conversion to a negative type, and surface roughness, and a pattern forming method using the same. SOLUTION: The positive resist composition for the electron beam, the EUV rays or the X ray is the positive resist composition containing a compound which generates an acid with active ray or radioactive ray irradiation (A) and a resin of which the solubility into an alkali developer increases by the action of the acid (B) wherein the resin of which the solubility into the alkali developer increases by the action of the acid (B) has a repeating unit with an alicyclic group to which a fluorine substituted alcohol residue is connected at least as a kind of repeating units. The pattern forming method uses the composition. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供使用电子束，X射线或EUV射线的半导体元件的微处理中的性能改进技术，并提供具有高灵敏度和高分辨率的正光刻胶组合物，并且同时满足优良的图案形状，线边缘粗糙度，溶液对比度，转换为负型的抑制和表面粗糙度，以及使用其的图案形成方法。解决方案：电子束，EUV射线或X射线的正型抗蚀剂组合物是含有产生具有活性射线或放射线照射（A）的酸的化合物的正性抗蚀剂组合物和其中溶解度通过酸（B）的作用，碱性显影剂的增加，其中通过酸（B）的作用使对碱性显影剂的溶解度增加的树脂具有带有氟取代的醇残基的脂环族基团的重复单元至少连接成一种重复单元。图案形成方法使用该组合物。版权所有（C）2006，JPO＆NCIPI

107. 发明专利

JP2005502916A Method of forming a high-precision pattern using a soft x-ray, and a manufacturing method of a nano device using the same 有权
公开(公告)号：JP2005502916A
公开(公告)日：2005-01-27
申请号：JP2003527514
申请日：2002-09-12
申请人：ポステックファンデーション
发明人：カン，タイ−ヘエ , キム，キ−ジェオン , キム，ボンソオ , ウォンパーク，ジョーン , ホムーン，ジョーン , ラ，ヤン−ヒェ
IPC分类号： G03F7/075 , G03F7/00 , G03F7/004 , G03F7/16 , G03F7/20 , H01L21/027 , H01L21/033
CPC分类号： G03F7/0755 , B81B2201/0214 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y10/00 , B82Y30/00 , G03F7/0045 , G03F7/165 , G03F7/2039 , H01L21/0337 , H01L21/312 , Y10S430/168 , Y10T428/261
摘要：軟Ｘ線を用いた自己組織化単分子層のナノスケール高解像度パターニング方法を提供する。前記方法は、基板上に末端環に置換基を有する芳香族イミン分子層を形成する段階と、前記芳香族イミン分子層の前記置換基への結合を選択的に切断する段階と、前記芳香族イミン分子層を加水分解する段階とを含む。

108. 发明专利

JP2004525506A A method for manufacturing a structure of X-ray / euv projection lithography due to the metal / semiconductor compound 审中-公开
公开(公告)号：JP2004525506A
公开(公告)日：2004-08-19
申请号：JP2002563077
申请日：2001-02-05
申请人：クァンティスクリプト・インコーポレーテッド
发明人：エリック・ラヴァレ , ジャック・ボーヴェ , ドミニク・ドルアン
IPC分类号： B81C1/00 , G03F1/22 , G03F1/24 , G03F1/50 , G03F7/004 , H01L21/027 , H01L21/3065 , H01L21/308 , G03F1/16
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/22 , G03F1/24 , G03F7/0042 , G03F7/0043 , Y10S430/168
摘要：サブミクロンスケールの解像度を有する、基板上にエッチング耐性金属／半導体化合物構想を形成するリソグラフィ法を開示する。エッチング耐性金属／半導体化合物を形成するために互いに反応可能な金属と半導体の層を基板上に積層して堆積する。Ｘ線／ＥＵＶ照射線源からの照射線は、パターン化されたＸ線透過／ＥＵＶ反射マスクを通って伝搬し、積層された金属と半導体の層に投影される。Ｘ線透過マスクはＸ線照射線に付与されるＸ線吸収パターンを含み、他方、ＥＵＶ反射マスクはＥＵＶ照射線に付与されるＥＵＶ吸収パターンを含む。Ｘ線／ＥＵＶフォトンのエネルギーは、金属と半導体の層に局所的に吸収される。このエネルギーの吸収は、Ｘ線／ＥＵＶマスクによって照射線に付与されるパターンに対応して構造を有するエッチング耐性金属／半導体化合物の形成に関わる金属と半導体との間の反応を誘起する。続いて、金属層を、エッチング耐性の金属／半導体化合物の構造を残したまま、選択性プラズマエッチング又はウェットエッチングを用いて、エッチングする。

109. 发明专利

JP2004170986A Radiographic imaging assembly 有权
公开(公告)号：JP2004170986A
公开(公告)日：2004-06-17
申请号：JP2003388121
申请日：2003-11-18
申请人： Eastman Kodak Co , イーストマンコダックカンパニー
发明人： DICKERSON ROBERT E , STEKLENSKI DAVID J , MOORE WILLIAM E
IPC分类号： G01T1/00 , G03B42/04 , G03C1/035 , G03C1/04 , G03C1/047 , G03C1/09 , G03C1/46 , G03C1/76 , G03C5/16 , G03C5/17 , G03C5/26 , G21K4/00
CPC分类号： G03C5/17 , G03C1/0051 , G03C1/46 , G03C5/16 , G03C5/26 , G03C2001/03511 , G03C2001/03541 , G03C2200/52 , G21K4/00 , Y10S430/167 , Y10S430/168
摘要： PROBLEM TO BE SOLVED: To improve mammography and another soft tissue imaging method.
SOLUTION: The radiographic imaging assembly 10 comprises a radiographic silver halide film 30 having a film speed of at least 100 and a single fluorescent intensifying screen 20 having a screen speed of at least 200, wherein the single fluorescent intensifying screen comprises an inorganic phosphor capable of absorbing X-radiation and emitting electromagnetic radiation having a wavelength of greater than 300 nm, the inorganic phosphor being applied in admixture with a polymeric binder in a phosphor layer onto a soft support and having a protective overcoat disposed on the phosphor layer.
COPYRIGHT: (C)2004,JPO

110. 发明专利

JP2003029418A Manufacturing method for structure using high energy light source 审中-公开
标题翻译：使用高能源光源的结构制造方法
公开(公告)号：JP2003029418A
公开(公告)日：2003-01-29
申请号：JP2002007676
申请日：2002-01-16
申请人： Pohang Eng College , 學校法人浦項工科大學校
发明人： LEE SEUNG SEOB , LEE SUNG-KEUN , LEE KWANG-CHEOL
IPC分类号： G03F7/20 , G02B3/00 , G03F7/00 , G03F7/38
CPC分类号： G03F7/38 , G03F7/00 , G03F7/0005 , Y10S430/146 , Y10S430/168
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing method of a structure using a high energy light source easily manufacturing not only a microlens but also an extremely small structure having a prescribed form by the exposure process of one time using the high energy light source such as an X ray and heat treatment. SOLUTION: By manufacturing a plurality of the microlenses having the same form by performing an injection molding or hot embossing process using a die for the microlens, the mass production of the microlenses is made possible. Also, in the case of using a laser as the high energy light source, since the exposure process is performed by exposing a laser light source to the photosensitive material of an area where the microlens is scheduled to be formed and irradiating it with a laser beam, the exposed photosensitive material surface is fused by the heat treatment and the microlens is formed, a mask can be omitted at the time of the exposure process.
摘要翻译：要解决的问题：为了提供使用高能量光源的结构的制造方法，其容易地制造微透镜，而且通过使用高能光源例如一次的曝光处理能够制造具有规定形状的极小结构， X射线和热处理。解决方案：通过使用用于微透镜的模具进行注射成型或热压花加工，通过制造具有相同形状的多个微透镜，可以大量生产微透镜。此外，在使用激光作为高能量光源的情况下，由于曝光处理是通过将激光光源曝光到预定形成微透镜的区域的感光材料上并用激光束通过热处理将曝光的感光材料表面熔合并形成微透镜，在曝光过程中可以省略掩模。

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