专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US5383215A Semiconductor laser which has a (100) top surface and a stripe ridge which extends in the horizontal <01-1> axis direction and has side wall surfaces (110) and a triangular region between (111) faces 失效
标题翻译：具有（100）顶表面和条脊的半导体激光器，其沿水平方向（01-1）轴向延伸并且具有侧壁表面（110）和在（111）面之间的三角形区域
公开(公告)号：US5383215A
公开(公告)日：1995-01-17
申请号：US103799
申请日：1993-08-10
申请人： Hironobu Narui , Daisuke Imanishi
发明人： Hironobu Narui , Daisuke Imanishi
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/32316
摘要： An SDH semiconductor laser has a semiconductor substrate which is (100) oriented and has a stripe ridge thereon, first and second cladding layers disposed on stripe ridge, an active layer sandwiched between the first and second cladding layers, and an electrode held in electric contact with the first and second cladding layers and the active layer. The stripe ridge extends in a axis direction, and the first and second cladding layers and the active layer jointly provide a semiconductor stripe region of triangular cross section sandwiched between (111) A faces. A method of manufacturing the SDH semiconductor laser is also disclosed.
摘要翻译： SDH半导体激光器具有（100）取向并具有条纹脊的半导体基板，设置在条纹脊上的第一和第二包层，夹在第一和第二包层之间的有源层和保持电接触的电极与第一和第二包层和有源层。条纹脊沿<01-1>轴方向延伸，并且第一和第二包层和有源层共同提供夹在（111）A面之间的三角形横截面的半导体条纹区域。还公开了一种制造SDH半导体激光器的方法。

102. 发明授权

US5297158A Semiconductor laser device including a gallium-aluminum arsenic compound 失效
标题翻译：包括镓铝砷化合物的半导体激光装置
公开(公告)号：US5297158A
公开(公告)日：1994-03-22
申请号：US871913
申请日：1992-04-21
申请人： Hiroki Naitou , Masahiro; Kume , Issei Ota , Hirokazu Shimizu
发明人： Hiroki Naitou , Masahiro; Kume , Issei Ota , Hirokazu Shimizu
IPC分类号： H01S5/12 , H01S5/125 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/209 , H01S5/2206 , H01S5/222 , H01S5/2227 , H01S5/32308 , H01S5/32316 , H01S5/4031
摘要： In a semiconductor laser device, a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type is provided on at least one principal plane of an active layer, while a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer and has a stripe-like window. The AlAs mode fractions Y and Z has a relation, Z>Y. The semiconductor laser device has low noises and a low operating current value.
摘要翻译：在半导体激光装置中，在有源层的至少一个主面上设置有导通型的Ga1-yAlyAs包层，而在包层上设置另一导电型的Ga1-ZAlZAs电流阻挡层，具有一个条纹般的窗口。 AlAs模式分数Y和Z具有关系Z> Y。半导体激光器件具有低噪声和低工作电流值。

103. 发明授权

US4916709A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4916709A
公开(公告)日：1990-04-10
申请号：US322178
申请日：1989-03-13
申请人： Yoichiro Ota , Tetsuya Yagi
发明人： Yoichiro Ota , Tetsuya Yagi
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2232 , H01S5/2231 , H01S5/2237 , H01S5/32316
摘要： A semiconductor laser device includes an active layer, a pair of different conductivity type cladding layers having a wider energy band gap than that of the active layer, sandwiching the active layer. One of the cladding layers has a stripe ridge or stripe groove. A high dopant concentration diffusion region having the same conductivity type as that of the cladding layer is disposed on the stripe ridge or the stripe groove. Therefore, a refractive index difference is provided in the two directions transverse to the length of the resonant cavity and a low astigmatism. Furthermore, because the light confinement is strengthened, the light emission efficiency is also enhanced.
摘要翻译：半导体激光器件包括有源层，具有比活性层的能带宽更宽的能量带隙的一对不同的导电型覆盖层，夹持有源层。包层中的一个具有条纹脊或条纹槽。具有与包覆层相同的导电类型的高掺杂剂浓度扩散区域设置在条纹脊或条纹槽上。因此，在横向于共振腔的长度的两个方向上提供折射率差，并且具有低散光。此外，由于光限制得到加强，发光效率也得到提高。

104. 发明授权

US4862472A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4862472A
公开(公告)日：1989-08-29
申请号：US143730
申请日：1988-01-14
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Chitose Sakane , Toshihiko Yoshida
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Chitose Sakane , Toshihiko Yoshida
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/2206 , H01S5/3211 , H01S5/32316 , H01S5/32391
摘要： A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, and a stripe structure that is disposed on the double-heterostructure, the stripe structure being composed of a current blocking layer with a conductive type different from that of the adjacent cladding layer, and the current blocking layer having a striped groove constituting a current path, wherein the cladding layer that contacts the current blocking layer is composed of an In.sub.1-s Ga.sub.s P.sub.1-t As.sub.t crystal material (wherein 0.51.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1 and s=2.04t-1.04).

105. 发明授权

US4675074A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4675074A
公开(公告)日：1987-06-23
申请号：US761023
申请日：1985-07-31
申请人： Masaru Wada , Hirokazu Shimizu , Takao Shibutani , Kunio Itoh , Ken Hamada , Iwao Teramoto
发明人： Masaru Wada , Hirokazu Shimizu , Takao Shibutani , Kunio Itoh , Ken Hamada , Iwao Teramoto
IPC分类号： H01L21/306 , H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01S5/2232 , H01L21/30612 , H01L21/30617 , H01L33/0062 , H01S5/32308 , H01S5/2081 , H01S5/2201 , H01S5/32316
摘要： The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x . The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.
摘要翻译：本发明提供一种用于半导体器件的化学蚀刻方法，其包括形成具有表面（100）的第一层Ga 1-x Al x As（0 的方向化学蚀刻所述层的步骤。第二层的蚀刻面的倾斜角取决于第二层的摩尔分数y，第一层的蚀刻面的倾斜角取决于第二层的摩尔分数y和第一层的摩尔分数x 层。这些事实在本发明中最好地利用，使得第一层的蚀刻轮廓可以具有期望的倾斜角。通过利用这种化学蚀刻方法，可以通过化学蚀刻具有垂直于结的平坦腔面的半导体激光器来制造; 也可以提供具有侧壁垂直的槽的内条型半导体激光器。

106. 发明专利

JP2007201372A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2007201372A
公开(公告)日：2007-08-09
申请号：JP2006021076
申请日：2006-01-30
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOBANE HIROYUKI
IPC分类号： H01S5/22
CPC分类号： H01S5/2231 , H01S5/20 , H01S5/2219 , H01S5/305 , H01S5/32316 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device with high output for reducing an operating voltage.
SOLUTION: This semiconductor laser device is provided with a first conductive buffer layer 11, a first conductive clad layer 12, an active layer 13, and a second conductive clad layer 14 formed on a first conductive semiconductor substrate 10. The band gap of the first conductive buffer layer 11 is set so as to be larger than the band gap of the semiconductor substrate 10, and smaller than the band gap of the first conductive clad layer 12. The impurity density of the first conductive buffer layer 11 is set so as to be larger than the impurity density of the first conductive clad layer 12.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高输出的半导体激光器件以降低工作电压。解决方案：该半导体激光器件设置有形成在第一导电半导体衬底10上的第一导电缓冲层11，第一导电覆层12，有源层13和第二导电覆层14。带隙将第一导电性缓冲层11的杂质浓度设定为大于半导体基板10的带隙，并且小于第一导电覆盖层12的带隙。第一导电性缓冲层11的杂质浓度被设定以便大于第一导电覆层12的杂质浓度。版权所有（C）2007，JPO＆INPIT

107. 发明专利

JP2006066846A Surface-emission device and its manufacturing method 审中-公开
标题翻译：表面发射装置及其制造方法
公开(公告)号：JP2006066846A
公开(公告)日：2006-03-09
申请号：JP2004273352
申请日：2004-09-21
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： NISHIDA TETSURO , ONISHI HAJIME
IPC分类号： H01S5/18 , H01S5/026
CPC分类号： H01L33/38 , H01L24/24 , H01L25/167 , H01L2924/12032 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01S5/0224 , H01S5/0261 , H01S5/042 , H01S5/0425 , H01S5/0427 , H01S5/06825 , H01S5/18311 , H01S5/18341 , H01S5/2086 , H01S5/2213 , H01S5/32316 , H01S2301/176 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent electrostatic destruction and to improve reliability in a surface-emission device and a manufacturing method of the device. SOLUTION: The surface-emission device is provided with a substrate 10; a light emitting element 20 including a first semiconductor 22 formed of a first conduction type, a second semiconductor 24 functioning as an active layer, and third semiconductors 26 and 28 formed of second conduction types which are all arranged on the side of the substrate 10; a rectifying element 40 including a first support 42 which is formed of the same composition as the first semiconductor 22, a second support 44 formed of the same composition as the second semiconductor 24, fourth semiconductors 46 and 48, and a fifth semiconductor 50 which are all arranged on the side of the substrate 10; and first and second electrodes 30 and 32 driving the light emitting element 20. The fourth and the fifth semiconductors 46, 48 and 50 are connected in parallel between the first and the second electrodes 30 and 32, and have rectifying operations in a direction opposite to the light emitting element 20. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止静电破坏并提高表面发射器件的可靠性和该器件的制造方法。表面发射装置设置有基板10; 包括由第一导电型形成的第一半导体22，作为有源层的第二半导体24以及全部配置在基板10一侧的第二导电型的第三半导体26,28的发光元件20，包括由与第一半导体22相同的组成形成的第一支撑件42的整流元件40，与第二半导体24，第四半导体46和48以及第五半导体50相同的组成形成的第二支撑件44，全部布置在基板10的侧面上; 以及驱动发光元件20的第一和第二电极30和32.第四和第五半导体46,48和50并联连接在第一和第二电极30和32之间，并且在与第一和第二电极30相反的方向上进行整流操作发光元件20.版权所有（C）2006，JPO＆NCIPI

108. 发明专利

JP3685306B2 2-wavelength semiconductor laser device and a method for manufacturing the same 有权
公开(公告)号：JP3685306B2
公开(公告)日：2005-08-17
申请号：JP5610199
申请日：1999-03-03
申请人：パイオニア株式会社
发明人：啓之太田 , 清文竹間 , 満西塚
IPC分类号： H01S5/00 , G11B7/00 , G11B7/125 , H01S3/00 , H01S3/10 , H01S3/14 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40
CPC分类号： G11B7/1275 , G11B2007/0006 , H01S5/0425 , H01S5/22 , H01S5/32316 , H01S5/32341 , H01S5/4025 , H01S5/405 , H01S5/4087

109. 发明专利

JP2005085977A Semiconductor laser device and manufacturing method of semiconductor laser device 审中-公开
标题翻译：半导体激光器件的半导体激光器件和制造方法
公开(公告)号：JP2005085977A
公开(公告)日：2005-03-31
申请号：JP2003316468
申请日：2003-09-09
申请人： Sharp Corp , シャープ株式会社
发明人： HASHIMOTO TAKAHIRO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/0421 , H01S5/2201 , H01S5/2206 , H01S5/2231 , H01S5/32316 , H01S5/32325 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device of small distortion and excellent light emission characteristics without the presence of a remarkable projection on the upper surface of a buried layer, and to provide its manufacturing method.
SOLUTION: On a substrate 1, an n-type buffer layer 2, an n-type clad layer 3, an active layer 4, a p-type clad layer 5 constituting a ridge part 11, a cap layer 6, an n-type buried layer 7 formed on both sides in the width direction of the ridge part 11 on the p-type clad layer 5, and a p-type contact layer 8 are sequentially laminated. The upper surface 6a of the cap layer 6 and the upper surface 7b of the buried layer 7 are crossed at the angle of ≥135° and ≤180° on the upper side of the cap layer 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有小失真和优异的发光特性的半导体激光器件，而不会在掩埋层的上表面上存在显着的突出，并提供其制造方法。解决方案：在基板1上，形成n型缓冲层2，n型覆盖层3，有源层4，构成脊部11的p型覆盖层5，盖层6，形成在p型覆盖层5上的脊部11的宽度方向的两侧的n型掩埋层7和p型接触层8依次层叠。盖层6的上表面6a和掩埋层7的上表面7b在盖层6的上侧以≥135°和≤180°的角度交叉。版权所有（C） 2005年，JPO＆NCIPI

110. 发明专利

JP3451841B2 A semiconductor laser, an optical pickup device and optical recording and / or reproducing apparatus 失效
公开(公告)号：JP3451841B2
公开(公告)日：2003-09-29
申请号：JP17556096
申请日：1996-06-14
申请人：ソニー株式会社
发明人：健志佐原
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/204 , H01S5/32316

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式