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1. 发明申请

US20090074022A1 DUAL-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：US20090074022A1
公开(公告)日：2009-03-19
申请号：US12166703
申请日：2008-07-02
申请人： Masahiro Kume , Toru Takayama , Shouichi Takasuka , Isao Kidoguchi
发明人： Masahiro Kume , Toru Takayama , Shouichi Takasuka , Isao Kidoguchi
IPC分类号： H01S5/026
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/4087
摘要： In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.
摘要翻译：在其中将第一半导体激光元件和第二半导体激光元件集成到由化合物半导体制成的基板上的双波长半导体激光器中，第一半导体激光元件的蚀刻阻挡层的构成材料是允许扩散的材料的杂质比第二半导体激光元件的蚀刻停止体的构成材料容易。

2. 发明授权

US07212556B1 Semiconductor laser device optical disk apparatus and optical integrated unit 有权
标题翻译：半导体激光器件光盘设备和光学集成单元
公开(公告)号：US07212556B1
公开(公告)日：2007-05-01
申请号：US09504782
申请日：2000-02-15
申请人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
发明人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/16225 , H01S5/005 , H01S5/0213 , H01S5/02208 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02292 , H01S5/0286 , H01S5/0683 , H01S5/1078 , H01S5/2022 , H01S5/2027 , H01S5/22 , H01S5/34333 , H01S2301/02 , H01S2301/173 , H01S2301/176 , H01S2304/04
摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.
摘要翻译：半导体激光器件包括：第一覆层，其由第一导电类型的氮化物半导体制成并形成在衬底上; 活性层，其由另一个氮化物半导体制成并形成在第一包层上; 以及第二覆层，其由另一种第二导电类型的氮化物半导体制成并形成在有源层上。由第一导电类型的又一个氮化物半导体制成并具有从有源层辐射的吸收自发发射的能隙的自发发射吸收层形成在衬底和第一覆层之间。

3. 发明申请

US20050141579A1 Semiconductor laser and method for fabricating the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20050141579A1
公开(公告)日：2005-06-30
申请号：US10980651
申请日：2004-11-04
申请人： Keiji Yamane , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Keiji Yamane , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01L21/50 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042 , H01S5/223
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/02272 , H01S5/2231 , H01S2301/14
摘要： A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a p-type contact layer stacked in this order form the bottom. A p-side ohmic electrode is formed on the p-type contact layer and an n-side ohmic electrode is formed on a back surface of the n-type semiconductor substrate. A stripe is formed in the current blocking layer so as to extend in the optical oscillator direction. In a center portion of the p-type contact layer, a slit is formed so as to extend in the optical oscillator direction and intersect with the stripe with right angles.
摘要翻译：半导体激光器包括n型半导体衬底，n型覆盖层，有源层，p型第一覆盖层，电流阻挡层，p型第二覆盖层和p型接触层堆叠以此顺序形成底部。在p型接触层上形成p侧欧姆电极，在n型半导体衬底的背面上形成n侧欧姆电极。在电流阻挡层中形成条带，以沿光学振荡器方向延伸。在p型接触层的中心部分，形成狭缝，以便在光学振荡器方向上延伸并且与条纹成直角相交。

4. 发明申请

US20050031001A1 Semiconductor laser device, method for fabricating the same, and optical disk apparatus 有权
标题翻译：半导体激光装置及其制造方法以及光盘装置
公开(公告)号：US20050031001A1
公开(公告)日：2005-02-10
申请号：US10943127
申请日：2004-09-17
申请人： Gaku Sugahara , Isao Kidoguchi , Ryoko Miyanaga , Masakatsu Suzuki , Masahiro Kume , Yusaburo Ban , Fukukazu Hirayama
发明人： Gaku Sugahara , Isao Kidoguchi , Ryoko Miyanaga , Masakatsu Suzuki , Masahiro Kume , Yusaburo Ban , Fukukazu Hirayama
IPC分类号： G11B7/125 , H01S5/028 , H01S5/20 , H01S5/223 , H01S5/343 , H01S5/00 , H01S3/08
CPC分类号： B82Y20/00 , G11B7/127 , H01S5/028 , H01S5/2004 , H01S5/2231 , H01S5/34333
摘要： A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).
摘要翻译：半导体激光器件（10）包括谐振腔（12），其中由氮化镓的阻挡层和氮化铟镓的阱层构成的量子阱活性层（11）垂直夹在至少导光层n之间和p型氮化镓铝。在谐振腔（12）中的与发光端面（10a）相对的反射端面（10b）上形成端面反射膜（13）。端面反射膜（13）具有包括多个单位反射膜（130）的结构，每个单元反射膜（130）由二氧化硅的低折射率膜（13a）和高折射率膜（13b）的氧化铌。低折射率和高折射率的薄膜依次沉积在谐振腔（12）的端面上。

5. 发明授权

US06606914B2 Load sensor, load sensor unit and insertion detection device 失效
标题翻译：负载传感器，负载传感器单元和插入检测装置
公开(公告)号：US06606914B2
公开(公告)日：2003-08-19
申请号：US09917933
申请日：2001-07-31
申请人： Masahiro Kume
发明人： Masahiro Kume
IPC分类号： G01N320
CPC分类号： G01G3/12 , G01G19/4142 , G01L1/20
摘要： A load sensor 10 is provided with an elastic conductive tube 21, and a first electrode member 22 and second electrode member 23 separated by a distance in the longitudinal direction. The load sensor 10 is further provided with an elongated insertion member 24 to be inserted into the elastic conductive tube 21, and envelope members 25, which are provided at predetermined intervals in the longitudinal direction to enclose the insertion member 24, and together with the insertion member 24 are inserted into the tube 21 to separate the insertion member 24 from the tube 21. When the tube 21 is bent by the application of a load, the electrode members 22 and 23 contact the tube 21. The load is detected by determining whether the electrode members 22 and 23 have been rendered conductive via the tube 21. The sensitivity of the sensor 10 can be easily controlled by adjusting the interval between envelope members 25 and the thicknesses thereof.
摘要翻译：负载传感器10设置有弹性导电管21，以及在纵向方向上隔开距离的第一电极构件22和第二电极构件23。负载传感器10还设置有插入到弹性导电管21中的细长插入件24和沿长度方向以预定间隔设置以封闭插入件24的包封件25，以及插入件构件24插入管21中以将插入构件24与管21分离。当管21通过施加负载而弯曲时，电极构件22和23与管21接触。通过确定负载是否被检测电极构件22和23已经通过管21导电。传感器10的灵敏度可以通过调节包络构件25之间的间隔及其厚度来容易地控制。

6. 发明授权

US06466597B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06466597B1
公开(公告)日：2002-10-15
申请号：US09332163
申请日：1999-06-14
申请人： Masahiro Kume , Yuzaburo Ban , Kenji Harafuji , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Ryoko Miyanaga , Akihiko Ishibashi , Yoshiaki Hasegawa
发明人： Masahiro Kume , Yuzaburo Ban , Kenji Harafuji , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Ryoko Miyanaga , Akihiko Ishibashi , Yoshiaki Hasegawa
IPC分类号： G01S500
CPC分类号： B82Y20/00 , H01S5/2009 , H01S5/34333
摘要： A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.
摘要翻译：氮化物半导体激光器件包括形成在蓝宝石衬底上的n型GaN的n型接触层和n型Al0.35Ga0.65N的n型覆层。在n型覆层上，具有Al0.2Ga0.8N / Al0.25Ga0.75N的多量子阱有源层，p型Al0.5Ga0.5N0.975P0.025的p型阻挡层和p型型p型Al0.4Ga0.6N0.98P0.02型包层依次形成。 p型漏电阻层的能隙比n型包覆层宽，p型漏电阻层和p型覆盖层包含磷，以使受主水平浅，保持宽的能隙。

7. 发明授权

US06324200B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06324200B1
公开(公告)日：2001-11-27
申请号：US09294336
申请日：1999-04-20
申请人： Satoshi Kamiyama , Masahiro Kume , Ryoko Miyanaga , Isao Kidoguchi , Yuzaburo Ban , Ayumu Tsujimura , Yoshiaki Hasegawa , Akihiko Ishibashi
发明人： Satoshi Kamiyama , Masahiro Kume , Ryoko Miyanaga , Isao Kidoguchi , Yuzaburo Ban , Ayumu Tsujimura , Yoshiaki Hasegawa , Akihiko Ishibashi
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
摘要： A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al0.3Ga0.7N cladding layer, an n-type Al0.25Ga0.75N optical guide layer, a multi-quantum well active layer, in which Al0.2Ga0.8N well layers and Al0.25Ga0.75N barrier layers are alternately stacked, an Mg-doped p-type Al0.25Ga0.75N optical guide layer, a p-type Al0.4Ga0.6N0.98P0.02 cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.
摘要翻译：在蓝宝石衬底上依次形成GaN缓冲层和Si掺杂n型GaN接触层。 n型Al0.3Ga0.7N覆层，n型Al0.25Ga0.75N光导层，多量子阱有源层，其中Al0.2Ga0.8N阱层和Al0.25Ga0.75N势垒层交替堆叠，将Mg掺杂的p型Al0.25Ga0.75N光导层，p型Al0.4Ga0.6N0.98P0.02包覆层和p型GaN接触层依次层叠在在n型接触层的上表面上的有源区。

8. 发明授权

US5886604A Circuit breaker 失效
标题翻译：断路器
公开(公告)号：US5886604A
公开(公告)日：1999-03-23
申请号：US25869
申请日：1998-02-19
申请人： Masahiro Kume
发明人： Masahiro Kume
IPC分类号： H01H71/24 , H01H71/10 , H01H71/52 , H01H9/00
CPC分类号： H01H71/1054 , H01H71/528
摘要： A circuit breaker having superior shock and vibration resistance is provided. The circuit breaker has a handle pivoted from an off position to an on position. The circuit is closed by bringing a movable contact point into contact with a fixed contact point via lever mechanisms. The circuit breaker has an electromagnetic coil which holds the movable iron piece in a non-attraction position away from an electromagnetic trip coil until power is applied to the electromagnetic trip coil. When the movable iron piece is attracted to the electromagnetic trip coil, the lever mechanisms are released from the constrained state, and the movable contact point is separated from the fixed contact point to thereby open the circuit, and the handle returns to the off position in conjunction with the lever mechanisms.
摘要翻译：提供具有优异的抗冲击和抗振性的断路器。断路器具有从关闭位置枢转到打开位置的把手。通过使可动触点通过杠杆机构与固定触点接触来闭合电路。断路器具有电磁线圈，其将可动铁片保持在远离电磁跳闸线圈的非吸引位置，直到向电磁跳闸线圈施加电力。当可动铁片被吸引到电磁脱扣线圈时，杠杆机构从受约束状态释放，并且可动触点与固定触点分离，从而打开电路，手柄返回到关闭位置与杠杆机构结合。

9. 发明授权

US5646953A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5646953A
公开(公告)日：1997-07-08
申请号：US417396
申请日：1995-04-05
申请人： Hiroki Naito , Masahiro Kume
发明人： Hiroki Naito , Masahiro Kume
IPC分类号： H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2231 , H01S5/0422 , H01S5/204 , H01S5/3211 , H01S5/32316 , H01S5/32333 , H01S5/32341 , H01S5/3432 , H01S5/34333
摘要： On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X.gtoreq.0 are satisfied.
摘要翻译：在n型半导体衬底上形成缓冲层和覆层。在包覆层上形成由Ga1-XAlXAs构成的活性层。在有源层上形成由Ga1-Y1AlY1As构成的n型第一导光层，在第一导光层上形成由Ga1-Y2AlY2As构成的n型第二导光层。在第一光导层和第二光导层上形成由Ga1-Y3AlY3As构成的n型覆层。第一光导层和包层之间的界面电阻大于第一光导层和第二光导层之间的界面电阻以及第二光导层与包层之间的界面电阻。在有源层，第一和第二光导层和包层的每个AlAs摩尔分数的X，Y1，Y2和Y3之间，满足Y3> Y2和Y1> X> / = 0的关系。

10. 发明申请

US20130075776A1 LIGHT DISTRIBUTION CONTROLLER, LIGHT-EMITTING DEVICE USING THE SAME, AND METHOD FOR FABRICATING LIGHT DISTRIBUTION CONTROLLER 失效
标题翻译：光分配控制器，使用其的发光装置和制造光分配控制器的方法
公开(公告)号：US20130075776A1
公开(公告)日：2013-03-28
申请号：US13701998
申请日：2011-07-04
申请人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
发明人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
IPC分类号： G09F13/04 , H01L33/00 , H01L33/50
CPC分类号： G09F13/04 , G02B19/0028 , G02B19/0066 , G02B19/0071 , H01L33/005 , H01L33/50 , H01L33/58
摘要： A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.
摘要翻译：发光装置的配光控制器包括由设置在插入透明粘合剂的LED上的ZnO形成的第一光学部件和覆盖第一光学部件的第二光学部件。第一光学构件包括具有正六边形形状的开口的第一凹部，其面积逐渐增加。在第一凹部中，形成具有倾斜面的内壁面，其各自的底部由开口形状的六边形的一侧形成。在第一光学构件的外侧，形成各自具有梯形形状的外壁面。第二光学构件包括第二凹部，其布置成使得通过第一光学构件行进的光的光分布特性中的环形峰值处的光被全反射。

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