专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

US20160177449A1 PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US20160177449A1
公开(公告)日：2016-06-23
申请号：US14973592
申请日：2015-12-17
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Takeshi OHMORI , Daisuke SATOU , Tatehito USUI , Satomi INOUE , Kenji MAEDA
IPC分类号： C23C16/513
CPC分类号： H01J37/32917 , H01J37/32926 , H01J37/32972 , H01J37/3299
摘要： A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.
摘要翻译：使用等离子体处理设置在处理室中的晶片的等离子体装置包括设置在光源和另一窗口之间的一个窗口，另一个窗口，光接收单元，光源和光分路单元，通过光源到朝向处理室的光路和沿另一方向的光路，并且从另一窗口反射处理室中的光;以及检测单元，其检测从等离子体发射的光并由光接收单元使用一个分支光和其他分支和反射光。该装置根据基于检测结果调整的处理条件处理晶片。

102. 发明授权

US09293303B2 Low contamination chamber for surface activation 有权
标题翻译：用于表面活化的低污染室
公开(公告)号：US09293303B2
公开(公告)日：2016-03-22
申请号：US14015556
申请日：2013-08-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ping-Yin Liu , Xin-Hua Huang , Lee-Chuan Tseng , Lan-Lin Chao
IPC分类号： H01J37/32 , H01L21/3065 , C23C16/455
CPC分类号： H01J37/32834 , C23C16/45565 , C23C16/50 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/32853 , H01J37/32862 , H01J37/32917 , H01J37/32972 , H01L21/3065 , H01L21/67017
摘要： An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, an adjustable bottom electrode, and an outlet. The chamber is configured to adjust a distance between the adjustable top and bottom electrodes in accordance with a desired density of plasma disposed between the top electrode and the bottom electrode.
摘要翻译：一个实施方案的低污染室包括气体入口，可调顶部电极，可调底部电极和出口。腔室被配置为根据设置在顶部电极和底部电极之间的等离子体的期望密度来调整可调节顶部和底部电极之间的距离。

103. 发明申请

US20160020092A1 METHODS FOR DEPOSITING SILICON OXIDE 有权
标题翻译：沉积氧化硅的方法
公开(公告)号：US20160020092A1
公开(公告)日：2016-01-21
申请号：US14335785
申请日：2014-07-18
申请人： Lam Research Corporation
发明人： Hu Kang , Wanki Kim , Adrien LaVoie
IPC分类号： H01L21/02 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/402 , C23C16/45542 , H01J37/32091 , H01J37/32137 , H01J37/32724 , H01J37/32917 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/0228 , H01L21/31111 , H01L21/76831 , H01L21/76898 , H01L27/11582
摘要： The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.
摘要翻译：本文的实施例集中于等离子体增强原子层沉积（PEALD）工艺。传统的PEALD技术导致薄膜在特征的底部和顶部具有高质量，但在侧壁上具有低质量。所公开的实施例实现更均匀的膜质量，这通过整个膜中更均匀的湿蚀刻速率和电性能来证明。公开的实施例可以在PEALD反应的每个循环期间使用相对高的沉积温度，用于产生等离子体的相对高的RF功率和/或相对长的RF等离子体暴露持续时间中的一个或多个。

104. 发明授权

US09128473B2 Arrangement for plasma processing system control based on RF voltage 有权
标题翻译：基于射频电压等离子体处理系统控制的布置
公开(公告)号：US09128473B2
公开(公告)日：2015-09-08
申请号：US13959584
申请日：2013-08-05
申请人： Lam Research Corporation
发明人： John C. Valcore , Henry S. Povolny
IPC分类号： H01L21/00 , H01L21/66 , H01L21/302 , G01R31/26 , G05B15/02 , H01J37/32
CPC分类号： H01J37/32137 , G05B15/02 , G05B19/418 , G05B2219/45031 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32917 , H01J37/32926 , H01J37/3299
摘要： An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a high impedance arrangement coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, processing the signal in a digital domain to obtain peak voltage information for a fundamental frequency and a broadband frequency of the signal, deriving wafer bias information from the peak voltage information, and applying signal to a transfer function to obtain a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.
摘要翻译：提供了一种用于控制等离子体处理系统的装置。该装置包括用于获得RF电压信号的RF感测机构。该布置还包括耦合到RF感测机构的高阻抗布置，以便于获取信号，同时减少在等离子体处理系统中驱动等离子体的RF功率的扰动。该装置还包括：信号处理装置，被配置为接收信号，处理数字域中的信号以获得信号的基频和宽带频率的峰值电压信息，从峰值电压信息导出晶片偏置信息，以及应用信号到传递函数以获得传递函数输出。该装置还包括配置成接收传递函数输出作为反馈信号以控制等离子体处理系统的ESC电源子系统。

105. 发明申请

US20140353525A1 CONTROL MODULE FOR AN ION IMPLANTER 有权
标题翻译：离子植入物的控制模块
公开(公告)号：US20140353525A1
公开(公告)日：2014-12-04
申请号：US14349499
申请日：2012-10-03
申请人： ION BEAM SERVICES
发明人： Frank Torregrosa , Laurent Roux
IPC分类号： H01J37/24
CPC分类号： H01J37/243 , G01R19/0061 , H01J37/32174 , H01J37/32311 , H01J37/32412 , H01J37/32422 , H01J37/32917 , H01J37/32972
摘要： The present invention relates to a control module for an ion implanter having a power supply, the power supply comprising: an electricity generator HT having its positive pole connected to ground; a first switch SW1 having its first pole connected to the negative pole of the generator HT and having its second pole connected to the outlet terminal S of the power supply; and a second switch SW2 having its first pole connected to the outlet terminal S and having its second pole connected to a neutralization terminal N. The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SW2 and the neutralization terminal N. The invention also provides an ion implanter fitted with this control module.
摘要翻译：本发明涉及一种用于具有电源的离子注入机的控制模块，该电源包括：其正极连接到地的发电机HT; 第一开关SW1，其第一极连接到发电机HT的负极，并且其第二极连接到电源的出口端子S; 以及第二开关SW2，其第一极连接到出口端S并且其第二极连接到中和端N.控制模块还包括电流测量电路AMP，用于测量在第二极之间流动的电流开关SW2和中和端N.本发明还提供了一种配有该控制模块的离子注入机。

106. 发明授权

US08900401B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08900401B2
公开(公告)日：2014-12-02
申请号：US12846403
申请日：2010-07-29
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

107. 发明申请

US20140210508A1 Determining A Malfunctioning Device in A Plasma System 有权
标题翻译：确定等离子体系统中的故障装置
公开(公告)号：US20140210508A1
公开(公告)日：2014-07-31
申请号：US14184631
申请日：2014-02-19
申请人： Lam Research Corporation
发明人： John C. Valcore, JR. , Bradford J. Lyndaker , Arthur Sato
IPC分类号： G01R31/40
CPC分类号： H01J37/32926 , G01R31/40 , H01J37/32917 , H01J37/3299
摘要： Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.
摘要翻译：描述了用于确定等离子体系统中的故障装置的系统和方法。方法之一包括接收在等离子体系统的等离子体室内是否产生等离子体的指示。等离子体系统包括处理部分和电力输送部分。该方法还包括：响应于接收到产生等离子体的指示，确定等离子体系统是否在约束内运行;当处理部分与电力输送部分分离时，确定电力输送部分的输出处的变量的值; 并将确定的值与变量的预先记录的值进行比较。该方法包括确定所确定的值是否在预先记录的值的范围之外，并且在确定所确定的值在预先记录的值的范围之外时确定电力输送部分内的故障装置。

108. 发明申请

US20130320852A1 PHASE DIFFERENCE DETECTOR, PHASE DIFFERENCE DETECTION PROGRAM, AND PLASMA PROCESSING SYSTEM USING THE PHASE DIFFERENCE DETECTOR 有权
标题翻译：相位差检测器，相位差检测程序和使用相位差检测器的等离子体处理系统
公开(公告)号：US20130320852A1
公开(公告)日：2013-12-05
申请号：US13904514
申请日：2013-05-29
申请人： DAIHEN Corporation
发明人： Toyokazu KITANO , Yoshinobu KASAI , Yuji YOSHIZAKO
IPC分类号： G01R25/00 , H05H1/46
CPC分类号： G01R25/00 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H05H1/46 , H05H2001/4682
摘要： A phase difference detector detects the phase difference between two AC signals at a high speed and with high accuracy. A phase difference computation unit computes the phase difference φr(=φ2−φ1) between two detected voltages v1 (phase angle: φ1) and v2 (phase angle: φ2). The phase difference computation unit uses a sine wave vs and a cosine wave vc generated separately and having the same frequency as the fundamental frequency of the voltages v1 and v2, to perform computation of v2s=v2×vs, v2c=v2×vc, v1s=v1×vs, v1c=v1×vc, and then extracts DC components I2=(−A2/2)·sin(φ2), R2=(A2/2)·cos(φ2), I1=(−A1/2)·sin(φ1), R1=(A1/2)·cos(φ1) at low-pass filters. The phase difference computation unit computes R3=R1×R2+I1×I2 at a complex multiplying unit to obtain R3=(A1·A2/4)·cos(φr), computes I3=R2×I1−R1×I2 to obtain I3=(A1·A2/4)·sin(φr), and computes φr=tan−1(I3/R3) at the arctangent calculation unit, thereby obtaining the phase difference φr.
摘要翻译：相位差检测器以高速和高精度检测两个AC信号之间的相位差。相位差计算单元计算两个检测电压v1（相位角：phi1）和v2（相位角：phi2）之间的相位差phir（= phi2-phi1）。相位差计算单元使用分别产生的与电压v1和v2的基频具有相同频率的正弦波vs余弦波vc来执行v2s = v2×vs，v2c = v2×vc，v1s的计算 = v1×vs，v1c = v1×vc，然后提取DC分量I2 =（ - A2 / 2）·sin（phi2），R2 =（A2 / 2）·cos（phi2），I1 =（ - A1 / 2 ）·sin（phi1），R1 =（A1 / 2）·cos（phi1）在低通滤波器。相位差计算单元以复乘法计算R3 = R1×R2 + I1×I2，得到R3 =（A1·A2 / 4）·cos（phir），计算I3 = R2×I1-R1×I2，得到I3 =（A1·A2 / 4）·sin（phir），并计算反正切计算单元处的phir = tan-1（I3 / R3），从而获得相位差phir。

109. 发明申请

US20130245969A1 METHOD TO DETECT WAFER ARCING IN SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：在半导体制造设备中检测波形弧的方法
公开(公告)号：US20130245969A1
公开(公告)日：2013-09-19
申请号：US13687754
申请日：2012-11-28
申请人： APPLIED MATERIALS, INC.
发明人： Scott Singlevich , Kommisetti Subrahmanyam , Tony Davis , Michael Johnson
IPC分类号： H01L21/66 , G01R31/08 , G06F17/00
CPC分类号： H01L22/20 , G01R31/024 , G01R31/08 , G06F17/00 , H01J37/32183 , H01J37/32541 , H01J37/32917 , H01J37/32935 , H01J37/32944 , H01J2237/3321 , H01L21/67253 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for accurate arc detection in semiconductor manufacturing tools are disclosed. Such methods and systems provide real-time arc detection and near real-time notification for corrective actions during a semiconductor manufacturing process. Such methods and systems utilize data with high sample rate and wavelet analysis to provide for more accurate arc detection, which leads to more effective and cost efficient semiconductor manufacturing operations.
摘要翻译：公开了用于半导体制造工具中的精确电弧检测的方法和系统。这样的方法和系统在半导体制造过程中提供实时电弧检测和近实时通知以用于校正动作。这种方法和系统利用具有高采样率和小波分析的数据来提供更准确的电弧检测，这导致更有效和成本有效的半导体制造操作。

110. 发明授权

US08038896B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08038896B2
公开(公告)日：2011-10-18
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式