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101. 发明申请

US20040169003A1 Micro-casted silicon carbide nano-imprinting stamp 失效
公开(公告)号：US20040169003A1
公开(公告)日：2004-09-02
申请号：US10794928
申请日：2004-03-05
发明人： Heon Lee , Gun-Young Jung
IPC分类号： H01L029/12
CPC分类号： B81C99/009 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H05K3/12 , Y10S977/887 , Y10T428/24479
摘要： A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

102. 发明申请

US20040081800A1 Micro-casted silicon carbide nano-imprinting stamp 失效
公开(公告)号：US20040081800A1
公开(公告)日：2004-04-29
申请号：US10279643
申请日：2002-10-24
发明人： Heon Lee , Gun-Young Jung
IPC分类号： B32B003/00
CPC分类号： B81C99/009 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H05K3/12 , Y10S977/887 , Y10T428/24479
摘要： A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

103. 发明申请

US20040081798A1 Hardened nano-imprinting stamp 失效
标题翻译：硬化纳米印记邮票
公开(公告)号：US20040081798A1
公开(公告)日：2004-04-29
申请号：US10279407
申请日：2002-10-24
发明人： Heon Lee , Gun-Young Jung
IPC分类号： B32B001/00
CPC分类号： B82Y10/00 , B81C99/009 , B82Y40/00 , G03F7/0002 , G03F7/0017 , Y10T428/24355
摘要： A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.
摘要翻译：公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。硬化的纳米压印印模包括多个硅基纳米尺寸特征，其具有碳化硅，氮化硅或碳化硅氮化物的硬化壳。通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。在等离子体工艺期间，碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅，氮化硅或碳化硅氮化物的硬化壳。提高了所得到的硬化纳米压印印模的寿命，耐久性，经济性和精度。

104. 发明申请

US20030038033A1 Process for fabricating high aspect ratio embossing tool and microstructures 审中-公开
标题翻译：用于制造高纵横比压花工具和微结构的工艺
公开(公告)号：US20030038033A1
公开(公告)日：2003-02-27
申请号：US09939972
申请日：2001-08-27
发明人： Alan B. Harker , Jeffrey F. DeNatale , Dennis Strauss
IPC分类号： B44C001/22 , C23F001/00 , B32B001/08 , C25F003/00 , B29D011/00 , C03C025/68 , C25D001/00
CPC分类号： G02B1/118 , B44B5/0052 , B44C1/24 , B81C99/009 , C25D7/00
摘要： A process for embossing high aspect ratio microstructures is provided, wherein the microstructures provide decreased surface reflection and increased transmission through an optical component. The process comprises etching columnar pits in a silicon substrate using inductively coupled plasma, followed by reactive ion etching of the columnar pits to create relatively pointed obelisks. The silicon substrate is then preferably rinsed prior to vapor depositing a conductive layer thereon. Further, a metal is electroformed over the conductive layer to form an embossing tool. The embossing tool is then used to form microstructures, for example in a polymer sheet, having aspect ratios greater than 5 to 1.
摘要翻译：提供了一种用于压花高纵横比微结构的方法，其中微结构提供减少的表面反射和通过光学部件的增加的透射。该方法包括使用电感耦合等离子体在硅衬底中蚀刻柱状凹坑，随后对柱状凹坑进行反应离子蚀刻以形成相对尖的方尖石。然后优选在将衬底上的导电层气相沉积之前冲洗硅衬底。此外，在导电层上电铸金属以形成压花工具。然后使用压花工具来形成具有大于5比1的纵横比的聚合物片材中的微结构。

105. 发明申请

US20020153625A1 Stamper-forming electrode material, stamper-forming thin film, and method of manufacturing optical disk 审中-公开
标题翻译：压模形成用电极材料，压模成形薄膜及其制造方法
公开(公告)号：US20020153625A1
公开(公告)日：2002-10-24
申请号：US10061222
申请日：2002-02-04
申请人： PIONEER CORPORATION
发明人： Masahiro Katsumura , Tetsuya Iida , Takashi Ueno , Nobuhiro Oda
IPC分类号： B29D011/00
CPC分类号： C25D1/10 , B81C99/009 , B81C2201/0128 , B81C2201/032
摘要： A stamper-forming electrode material contains Ag as its main ingredient and at least one other element, preferably Au and/or Cu. It is preferred that the Au and Cu contents each be 5.0 wt % or less. A stamper-forming thin film is made of this stamper-forming electrode material, whereby its corrosion resistance is improved to suppress damage to itself, and a high-quality stamper can hence be formed.
摘要翻译：压模形成电极材料包含Ag作为其主要成分和至少一种其它元素，优选Au和/或Cu。 Au和Cu的含量优选为5.0重量％以下。压模形成薄膜由该压模形成用电极材料制成，由此其耐腐蚀性得到改善以抑制其自身的损坏，因此可以形成高质量的压模。

106. 发明公开

EP2688091A1 Method for producing a cavity by anisotropically removing material from a substrate 有权
标题翻译：一种用于通过各向异性材料去除从衬底制备的腔体过程
公开(公告)号：EP2688091A1
公开(公告)日：2014-01-22
申请号：EP12176910.3
申请日：2012-07-18
申请人： IMEC
发明人： Hantschel, Thomas , Vandervorst, Wilfried
IPC分类号： H01L21/302 , H01L21/306 , B81C1/00
CPC分类号： H01L21/302 , B81C99/009 , H01L21/306
摘要： The invention is related to a method for producing cavities in a crystalline substrate, preferably a semiconductor substrate. According to a preferred embodiment, a masking pattern is formed on the substrate, leaving one or more portions of the substrate exposed. Then a metal layer is deposited at least onto the exposed portions and the substrate is heated so as to produce an alloy of the substrate material and the added metal, through the dissolution of the substrate material into the metal. The choice of the substrate material and the metal in the method is such that the dissolution rate of the substrate material into the metal depends on the crystal plane of the crystallographic structure of the substrate. In this way, the alloy forms in a volume that is shaped along predefined crystallographic planes, for example an inverted pyramid or V-shaped trench. The invention is further related to a method for filling said cavity and obtaining a MEMS or NEMS structure therefrom.
摘要翻译：本发明涉及一种方法，用于在结晶衬底，优选半导体衬底生产空腔。。根据一个优选实施例，掩蔽图案被形成在衬底上，留下暴露的衬底中的一个或多个部分。然后将金属层至少沉积在暴露的部分和基片进行加热，从而产生在基片材料的合金和添加的金属，通过在基板材料的溶解到金属。的材料的底物和方法中的金属的选择检查做的基板材料的溶解速率进入金属依赖于衬底的晶体结构的晶面。以这种方式，在一个体积中的合金形式并沿预定的晶面形，为倒金字塔形或V形沟槽的实施例。本发明还涉及一种用于填充所述腔，并从那里获得的MEMS或NEMS结构的方法。

107. 发明公开

EP2627605A2 PROCESS FOR PRODUCING HIGHLY ORDERED NANOPILLAR OR NANOHOLE STRUCTURES ON LARGE AREAS 有权
标题翻译：方法对高层次HerstellingNANOSÄULEN-或纳米孔结构的大型区域
公开(公告)号：EP2627605A2
公开(公告)日：2013-08-21
申请号：EP11769797.9
申请日：2011-10-12
申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. , Fachhochschule Jena
发明人： MORHARD, Christoph , PACHOLSKI, Claudia , SPATZ, Joachim P. , BRUNNER, Robert
IPC分类号： B81C1/00
CPC分类号： B29C59/002 , B81C99/009 , B81C2201/0149 , B82Y30/00 , G03F7/0002
摘要： The present invention relates to an improved process for producing highly ordered nanopillar or nanohole structures, in particular on large areas, which can be used as masters in NIL, hot embossing or injection molding processes. In a preferred embodiment, said process comprises at least the following steps: a) providing a primary substrate that is decorated on at least one surface with an ordered array of metal nanoparticles produced by means of a micellar block-copolymer nanolithography process; b) etching the primary substrate of step a) in a predetermined depth, preferably in the range from 50 to 500 nm, wherein the nanoparticles act as a mask and an ordered array of nanopillars or nanocones corresponding to the positions of the nanoparticles is produced; c) using the nanostructured substrate obtained in step b) as a master or stamp in nanoimprint lithographic (NIL), hot embossing or injection molding processes. In another preferred embodiment, said process comprises the steps a) and b) above and additionally c) coating the nanostructured substrate surface obtained in step b) with a continuous metal layer; d) selective etching of the product of step c) using an etching agent, e.g. HF, which removes the primary substrate but not the metal layer, resulting in a metal substrate comprising an ordered array of nanoholes which is a negative of the original array of nanopillars or nanocones.
摘要翻译：本发明涉及到改进的方法用于在大面积上，其可被用作NIL主人，热压印或注塑方法生产高度有序的纳米柱或纳米孔结构，特别是。该方法涉及在由胶束的嵌段共聚物的纳米光刻工艺来制造的金属纳米颗粒的有序阵列装饰用表面; 蚀刻所述主基板至50至500纳米，其中所述纳米颗粒充当掩模和在纳米柱或纳米锥对应于纳米颗粒如此产生的位置的有序阵列的深度; 使用该纳米结构化主站或在邮票的结构化过程。所以成品纳米结构化基底表面可以被用作牺牲主所有的涂有连续的金属层，然后将主被刻蚀掉，留下具有纳米孔的所有有序阵列，其是负纳米柱或的原始阵列的金属邮票纳米锥。

108. 发明授权

EP2360115B1 Method of producing a polymer stamp for the reproduction of devices comprising microstructures and nanostructures, a corresponding polymer stamp, and a corresponding device 有权
标题翻译：一种用于制备聚合物印模用于与微纳米结构相关联聚合物印模和相关联的设备的模制装置的过程
公开(公告)号：EP2360115B1
公开(公告)日：2012-06-06
申请号：EP10194892.5
申请日：2010-12-14
申请人： Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Consejo Superior de Investigaciones Científicas
发明人： Senn, Tobias , Esquivel-Bojoquez, Juan Pablo , Sabaté-Vizcarra, Neus , Lörgen, Dr. Marcus
IPC分类号： B81C99/00 , H01M8/00
CPC分类号： B81C99/009 , B81B2201/051 , B81C1/00206 , B81C2201/0153 , B81C2201/034 , H01M8/0258 , H01M8/04164 , H01M2008/1095

109. 发明公开

EP2360114A1 Method of producing a polymer stamp for the reproduction of devices comprising microstructures and nanostructures, a corresponding polymer stamp, a corresponding device and a fuel delivery system or water management system for fuel cells 有权
标题翻译：一种用于制备聚合物印模用于与微模制装置和纳米结构和相应的设备过程
公开(公告)号：EP2360114A1
公开(公告)日：2011-08-24
申请号：EP10153537.5
申请日：2010-02-12
申请人： Consejo Superior De Investigaciones Científicas , Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
发明人： Esquivel Bojorquez, Juan Pablo , Senn, Tobias , Lörgen, Marcus , Sabaté Vizcarra, Neus , Cané Ballart, Carles
IPC分类号： B81C99/00 , H01M8/00
CPC分类号： B81C99/009 , B81B2201/051 , B81C1/00206 , B81C2201/0153 , B81C2201/034 , H01M8/0258 , H01M8/04164 , H01M2008/1095
摘要： The present invention provides a method of producing a polymer stamp (11) for the reproduction of devices comprising microstructures (5, 6) and nanostructures (3), the method comprising the steps of providing a first substrate (1), patterning nanostructures (3) into the first substrate material, patterning microstructures (5, 6) onto the first substrate (1), casting a polymer elastomer onto the first substrate (1) with nanostructures (3) and microstructures (5, 6) to form a polymer stamp (11) and releasing the polymer stamp (11). The present invention is further directed to a method of reproducing devices comprising microstructures and nanostructures comprising the steps of casting a final product (12) material onto the polymer stamp (11) comprising microstructures (5, 6) and nanostructures (3) produced according to the invention, wherein the microstructures (5, 6) and nanostructures (3) are transferred during the casting step to the final product (12), and releasing the final product (12) of the polymer stamp (11). In a preferred embodiment, the final device forms a part of a micro fuel cell system as a fuel delivery system (22) or a water management system (26).
摘要翻译：本发明提供了产生用于装置的含有微结构的再现的聚合物印模（11）的方法（5,6）和纳米结构（3），该方法包括：提供第一基板（1），图案化的纳米结构的步骤（3 ）到第一基底材料，图案形成微结构（5,6）在第一基板（1）浇铸聚合物弹性体到所述第一基片（1）纳米结构（3）和微结构（5,6），以形成一个聚合物印模（11）和释放所述聚合物印模（11）。本发明还涉及到再现包含微结构和纳米结构，其包括铸造的最终产品的步骤的设备的方法（12）材料到聚合物印模（11）包括微结构（5,6）和纳米结构（3）产生的雅丁到本发明中，worin微结构（5,6）和纳米结构（3）在铸造工序到最终产物（12）被转移，并释放所述聚合物印模（11）的最终产物（12）。在优选实施例中，最终设备形成一个微型燃料电池系统的燃料输送系统（22）或水管理系统（26）的一部分。

110. 发明授权

EP2084734B1 VERFAHREN ZUM PLASMAÄTZEN ZUR ERZEUGUNG POSITIVER ÄTZPROFILE IN SILIZIUMSUBSTRATEN 有权
标题翻译：用于生产等离子体刻蚀阳性硅衬底
公开(公告)号：EP2084734B1
公开(公告)日：2011-05-11
申请号：EP07785710.0
申请日：2007-08-15
申请人： Technische Universität Dresden
发明人： RICHTER, Karola , ZSCHÄTZSCH, Gerd
IPC分类号： H01L21/3065 , B81C1/00
CPC分类号： H01L21/30655 , B81C1/00626 , B81C99/009 , B81C2201/0132
摘要： The invention relates to a plasma etching method for producing positive etching profiles (4) in silicon substrates (1) whose features (11), etched using a mask (2), have a feature overhang (5) at the edge in the region of the feature entrance opening (8), said feature overhang being oriented toward the centre of the feature entrance opening (8), where a first etching operation is performed using first isotropic etching and using first anisotropic etching in a first time ratio (Z1). The object is to remove the feature overhangs which are produced when etching using masks and which are produced directly beneath the mask in the surface region of the treated patterned silicon substrates. The object is achieved by removing the feature overhang (5) by performing a maskless second etching operation with the following steps: A) second anisotropic etching of the silicon substrate (1) which has the feature overhang, with a polymer layer being produced on the side walls (3), B) removal of the polymer layer from the side walls (3) using an O2 plasma, C) second isotropic etching of the silicon substrate (1), with the second etching operation being performed using a second time ratio (Z2) on the basis of equation (II), linked to a change of etching profile which is free of any feature overhang, until at least one feature entrance angle (α), where α = 0°, is achieved in the region of the feature entrance opening (8), the period of time (tisotrop - 2) for the second isotropic etching and the period of time (tanisotrop - 2 ) for the second anisotropic etching being prescribed.

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