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101. 发明授权

US07433791B2 Method of performing multiple stage model calibration for optical imaging simulation models 有权
标题翻译：对光学成像模拟模型进行多级模型校准的方法
公开(公告)号：US07433791B2
公开(公告)日：2008-10-07
申请号：US11708137
申请日：2007-02-20
申请人： Sangbong Park , Duan-Fu Stephen Hsu , Edita Tejnil
发明人： Sangbong Park , Duan-Fu Stephen Hsu , Edita Tejnil
IPC分类号： G01D18/00 , G01B9/00
CPC分类号： G03F7/705
摘要： A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.
摘要翻译：校准光刻工艺的仿真模型的方法。该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程，其中调整模型参数和对准参数，使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程，其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。

102. 发明授权

US07355681B2 Optical proximity correction using chamfers and rounding at corners 有权
标题翻译：使用倒角进行光学邻近校正，并在角落四舍五入
公开(公告)号：US07355681B2
公开(公告)日：2008-04-08
申请号：US11101649
申请日：2005-04-08
申请人： Thomas Laidig , Markus Franciscus Antonius Eurlings
发明人： Thomas Laidig , Markus Franciscus Antonius Eurlings
IPC分类号： G03B27/32 , G03B27/42 , G03F9/00
CPC分类号： G03F1/36
摘要： Disclosed is a method of optimizing a design to be formed on a substrate. The method includes approximating rounding of at least one corner of an image of the design; generating a representation of the design further to the approximate rounding of the at least one corner; generating an initial representation of a mask utilized to image the design based on the representation; and performing Optical Proximity Correction (OPC) further to the initial representation of the mask.
摘要翻译：公开了一种优化要在基板上形成的设计的方法。该方法包括近似设计图像的至少一个角的舍入; 产生所述设计的表示进一步到所述至少一个角的近似舍入; 生成用于基于所述表示对所述设计进行成像的掩模的初始表示; 并进一步执行光学近距校正（OPC）以进行掩模的初始表示。

103. 发明申请

US20080043215A1 Optimized polarization illumination 有权
标题翻译：优化极化照明
公开(公告)号：US20080043215A1
公开(公告)日：2008-02-21
申请号：US11907648
申请日：2007-10-16
申请人： Robert Socha , Donis Flagello , Steve Hansen
发明人： Robert Socha , Donis Flagello , Steve Hansen
IPC分类号： G03B27/72
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70341 , G03F7/70566 , G03F7/70616
摘要： Disclosed concepts include a method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate. Polarized illumination is optimized by determining an illumination intensity for at least one point on an illuminator for at least two polarization states, determining image log slope for the at least one point on the illuminator for the at least two polarization states, determining a maximum image log slope (ILS) where the ILS is near zero for the at least one point on the illuminator, and selecting an optimal polarization state corresponding to the at least two polarization states that minimizes an ILS for the at least one point on the illuminator. This may be repeated for a plurality of points on the illuminator.
摘要翻译：公开的概念包括优化待形成在衬底的表面中的图案的照明的偏振的方法。通过确定至少两个偏振状态的照明器上的至少一个点的照明强度来确定极化照明，确定用于至少两个偏振状态的照明器上的至少一个点的图像对数斜率，确定最大图像记录斜率（ILS），其中ILS对于照明器上的至少一个点接近于零，并且选择对应于使得照明器上的至少一个点的ILS最小化的至少两个偏振状态的最佳极化状态。对于照明器上的多个点可以重复这一点。

104. 发明授权

US07242459B2 Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated Eigen decomposition model 有权
标题翻译：使用校准的特征分解模型预测和最小化由于曝光工具的混合/匹配造成的OPC偏差的方法
公开(公告)号：US07242459B2
公开(公告)日：2007-07-10
申请号：US11044711
申请日：2005-01-28
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70441 , G03F7/70516 , G03F7/70525
摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.
摘要翻译：一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像用于光刻工艺的第二曝光工具。

105. 发明授权

US07211815B2 Method of achieving CD linearity control for full-chip CPL manufacturing 有权
标题翻译：实现全芯片CPL制造的CD线性控制的方法
公开(公告)号：US07211815B2
公开(公告)日：2007-05-01
申请号：US10659715
申请日：2003-09-11
申请人： Doug Van Den Broeke , Chungwei Hsu , Jang Fung Chen
发明人： Doug Van Den Broeke , Chungwei Hsu , Jang Fung Chen
IPC分类号： G01N21/86 , G06F17/50
CPC分类号： G03F1/36 , G03F1/34
摘要： A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.
摘要翻译：一种生成用于打印包括具有不同临界尺寸的多个特征的图案的掩模的方法。该方法包括以下步骤：（1）获取表示图案的数据; （2）基于所述多个特征的临界尺寸来定义多个不同区域; （3）将每个特征分类为多个不同区域中的一个; 以及（4）对于分类为所述多个不同区域中的预定义的不同区域的每个特征修改所述掩模图案。

106. 发明授权

US07138212B2 Method and apparatus for performing model-based layout conversion for use with dipole illumination 有权
标题翻译：用于与偶极照明一起使用的基于模型的布局转换的方法和装置
公开(公告)号：US07138212B2
公开(公告)日：2006-11-21
申请号：US10705231
申请日：2003-11-12
申请人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
发明人： Duan-Fu Stephen Hsu , Kurt E. Wampler , Markus Franciscus Antonius Eurlings , Jang Fung Chen , Noel Corcoran
IPC分类号： G01F9/00
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70441 , G03F7/70466
摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
摘要翻译：一种产生用于多次曝光光刻成像过程的互补掩模的方法。该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

107. 发明授权

US07116411B2 Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
标题翻译：执行抗蚀剂工艺校准/优化和DOE优化的方法，以提供不同光刻系统之间的OPE匹配
公开(公告)号：US07116411B2
公开(公告)日：2006-10-03
申请号：US10926400
申请日：2004-08-26
申请人： Sangbong Park , Jang Fung Chen , Armin Liebchen
发明人： Sangbong Park , Jang Fung Chen , Armin Liebchen
IPC分类号： G01B9/00 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
摘要翻译：一种优化用于多个光刻系统的工艺的方法。该方法包括以下步骤：（a）使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; （b）选择待利用的第二光刻系统，以利用所述给定的处理对所述目标图案进行成像，所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件，所述多个衍射光学元件中的每一个具有对应的变量用于优化给定衍射光学元件的性能的参数; （c）选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件，校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及（d）通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能，所述遗传算法识别所述多个衍射光学元件中所选择的一个的参数的值，其优化所述目标图案的成像。

108. 发明授权

US08640058B2 Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process 有权
标题翻译：用于多重曝光过程中用于基于模型的几何分解的方法，程序产品和装置
公开(公告)号：US08640058B2
公开(公告)日：2014-01-28
申请号：US13244127
申请日：2011-09-23
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70433 , G03F7/705
摘要： A method of decomposing a target pattern having features to be imaged on a substrate so as to allow said features to be imaged in a multi-exposure process. The method includes the steps of: segmenting a plurality of the features into a plurality of polygons; determining the image log slope (ILS) value for each of the plurality of polygons; determining the polygon having the minimum ILS value, and defining a mask containing the polygon; convolving the defined mask with an eigen function of a transmission cross coefficient so as to generate an interference map, where the transmission cross coefficient defines the illumination system to be utilized to image the target pattern; and, assigning a phase to the polygon based on the value of the interference map at a location corresponding to the polygon, where the phase defines which exposure in said multi-exposure process the polygon is assigned.
摘要翻译：一种分解具有要在基底上成像的特征的目标图案的方法，以便允许所述特征在多曝光过程中成像。该方法包括以下步骤：将多个特征分割成多个多边形; 确定所述多个多边形中的每一个的图像对数斜率（ILS）值; 确定具有最小ILS值的多边形，并且定义包含多边形的掩模; 将所定义的掩模与传输交叉系数的本征函数进行卷积，以产生干涉图，其中传输交叉系数定义要用于对目标图案成像的照明系统; 并且基于在与所述多边形相对应的位置处的所述干涉图的值将相位分配给所述多边形，其中所述相位定义在所述多曝光处理中指定所述多边形的哪个曝光。

109. 发明申请

US20120122023A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20120122023A1
公开(公告)日：2012-05-17
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/36 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

110. 发明授权

US08111901B2 Apparatus and method for separating a circuit pattern into multiple circuit patterns 有权
标题翻译：将电路图案分离为多个电路图案的装置和方法
公开(公告)号：US08111901B2
公开(公告)日：2012-02-07
申请号：US11889573
申请日：2007-08-14
申请人： Peter Nikolsky
发明人： Peter Nikolsky
IPC分类号： G06K9/00
CPC分类号： G03F7/70433 , G03F7/70283 , G03F7/70466 , G03F7/705 , G06K9/00476
摘要： A method for separating an original circuit pattern to be printed on a wafer, into multiple circuit patterns is disclosed. Simulation to obtain an image log-slope (ILS), normalized image log-slope (NILS), or any other characteristic of an image quality on edges of polygons in the circuit pattern obtained from circuit pattern data is performed. Properly printed edges and not-properly printed edges are identified according to a criterion of an ILS level. The original circuit pattern is separated into multiple circuit patterns such that each of the multiple patterns does not have any not-properly printed edges.
摘要翻译：公开了将待印刷的原始电路图案分离成多个电路图案的方法。执行从电路图案数据获得的电路图案中获得图像对数斜率（ILS），归一化图像对数斜率（NILS）或多边形边缘上的图像质量的任何其他特性。根据ILS级别的标准来识别正确打印的边缘和不正确打印的边缘。原始电路图案被分成多个电路图案，使得多个图案中的每一个不具有任何不正确打印的边缘。

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