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101. 发明授权

US06891231B2 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier 有权
标题翻译：具有高介电常数栅极电介质和集成扩散势垒的互补金属氧化物半导体（CMOS）栅极叠层
公开(公告)号：US06891231B2
公开(公告)日：2005-05-10
申请号：US09879105
申请日：2001-06-13
申请人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
IPC分类号： H01L21/8238 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/513 , H01L21/28194
摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
摘要翻译：用于具有沟道区和栅电极的场效应晶体管的扩散势垒（和形成扩散势垒的方法）包括设置在沟道区上的绝缘材料。绝缘材料包括氮（N），并且设置在栅电极下方。绝缘材料可以设置为层或分布在设置在栅电极下方的栅极电介质材料内。

102. 发明申请

US20050047252A1 Rare earth metal oxide memory element based on charge storage and method for manufacturing same 失效
标题翻译：基于电荷存储的稀土金属氧化物记忆元件及其制造方法
公开(公告)号：US20050047252A1
公开(公告)日：2005-03-03
申请号：US10954275
申请日：2004-10-01
申请人： Nestor Bojarczuk , Eduard Cartier , Supratik Guha
发明人： Nestor Bojarczuk , Eduard Cartier , Supratik Guha
IPC分类号： H01L21/28 , H01L21/316 , H01L29/51 , G11C7/02
CPC分类号： H01L21/28185 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/28194 , H01L21/28282 , H01L21/31604 , H01L21/3162 , H01L29/517
摘要： A data storage element (and method of forming the same) includes a substrate comprising a semiconductor material, a metal oxide layer including an electrically insulating rare earth metal oxide disposed upon a surface of the substrate, a conductive material disposed upon the metal oxide layer, a first electrode electrically connected to the conductive material, and a second electrode connected to the substrate.
摘要翻译：数据存储元件（及其形成方法）包括：包含半导体材料的基板，设置在基板表面上的电绝缘稀土金属氧化物的金属氧化物层，设置在金属氧化物层上的导电材料，电连接到导电材料的第一电极和连接到基板的第二电极。

103. 发明授权

US06852575B2 Method of forming lattice-matched structure on silicon and structure formed thereby 有权
公开(公告)号：US06852575B2
公开(公告)日：2005-02-08
申请号：US09898039
申请日：2001-07-05
申请人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Douglas Andrew Buchanan , Supratik Guha , Vijay Narayanan , Lars-Ake Ragnarsson
IPC分类号： H01L21/316 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02192 , B82Y10/00 , B82Y30/00 , H01L21/02293 , H01L21/31604
摘要： A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

104. 发明授权

US06831339B2 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same 有权
标题翻译：氮化铝和氧化铝/氮化铝异质结构栅极电介质堆叠的场效应晶体管及其形成方法
公开(公告)号：US06831339B2
公开(公告)日：2004-12-14
申请号：US09755164
申请日：2001-01-08
申请人： Nestor A. Bojarczuk, Jr. , Eduard Cartier , Supratik Guha , Lars-Ake Ragnarsson
发明人： Nestor A. Bojarczuk, Jr. , Eduard Cartier , Supratik Guha , Lars-Ake Ragnarsson
IPC分类号： H01L29772
CPC分类号： H01L21/28202 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.
摘要翻译：一种结构（例如场效应晶体管）和一种制造该结构的方法包括：具有源极区，漏极区和沟道区的衬底，设置在沟道区上方的绝缘层，绝缘层包括层包括设置在沟道区域上的氮化铝，以及设置在绝缘层上的栅电极。

105. 发明授权

US06541079B1 Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique 失效
标题翻译：通过原子束沉积技术工程化的高介电常数氧化物和氧氮化物异质结构栅极电介质
公开(公告)号：US06541079B1
公开(公告)日：2003-04-01
申请号：US09426656
申请日：1999-10-25
申请人： Nestor A. Bojarczuk, Jr. , Eduard A. Cartier , Supratik Guha
发明人： Nestor A. Bojarczuk, Jr. , Eduard A. Cartier , Supratik Guha
IPC分类号： C23C1408
CPC分类号： C23C14/22 , C23C14/081
摘要： A method of forming a layer of oxide or oxynitride upon a substrate including first placing a substrate having an upper surface and a lower surface in a high vacuum chamber and then exposing the upper surface to a beam of atoms or molecules, or both, of oxygen or nitrogen or a combination of same at a temperature sufficient to form a reacted layer on the upper surface of said substrate wherein said layer has a chemical composition different from the chemical composition of said substrate. The reacted upper layer is then exposed simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or metal molecules selected from the group consisting of Al, Si, Zr, La, Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a metal nitride or a metal oxynitride layer in said layer. Another option is to expose the upper surface of the substrate simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or meal molecules selected from the group consisting of Al, Si, Zr, La Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a metal nitride or a metal oxynitride layer on said reacted layer.
摘要翻译：一种在衬底上形成氧化物或氮氧化物层的方法，包括首先将具有上表面和下表面的衬底放置在高真空室中，然后将上表面暴露于原子或分子或两者的氧气束或氮或其组合，其温度足以在所述基材的上表面上形成反应层，其中所述层具有不同于所述基材的化学组成的化学组成。然后将反应的上层在室中同时暴露于氧，氮或两者的原子或分子束，并且暴露于选自Al，Si，Zr，La，Y，Sc等金属原子或金属分子束， Sr，Ba，Ti，Ta，W，Cr，Zr，Ca，Mg，Be，Pr，Nd和Hf，以在所述层中形成金属氧化物，金属氮化物或金属氮氧化物层。另一个选择是将基板的上表面同时暴露于氧，氮或两者的原子或分子束，以及选自Al，Si，Zr，La Y的金属原子或粉末分子束，Sc，Sr，Ba，Ti，Ta，W，Cr，Zr，Ca，Mg，Be，Pr，Nd和Hf，以在所述反应层上形成金属氧化物，金属氮化物或金属氮氧化物层。

106. 发明授权

US5739545A Organic light emitting diodes having transparent cathode structures 失效
标题翻译：具有透明阴极结构的有机发光二极管
公开(公告)号：US5739545A
公开(公告)日：1998-04-14
申请号：US794072
申请日：1997-02-04
申请人： Supratik Guha , Richard Alan Haight , Joseph M. Karasinski , Ronald R. Troutman
发明人： Supratik Guha , Richard Alan Haight , Joseph M. Karasinski , Ronald R. Troutman
IPC分类号： H01L51/50 , H01L51/52 , H05B33/12 , H05B33/14 , H05B33/22 , H05B33/26 , H01L35/24 , H01L51/00
CPC分类号： H01L51/5234 , H01L2251/5323
摘要： Organic light emitting diodes having a transparent cathode structure is disclosed. The structure consists of a low work function metal in direct contact with the electron transport layer of the OLED covered by a layer of a wide bandgap semiconductor. Calcium is the preferred metal because of its relatively high optical transmissivity for a metal and because of its proven ability to form a good electron injecting contact to organic materials. ZnSe, ZnS or an alloy of these materials are the preferred semiconductors because of their good conductivity parallel to the direction of light emission, their ability to protect the underlying low work function metal and organic films and their transparency to the emitted light. Arrays of these diodes, appropriately wired, can be used to make a self-emissive display. When fabricated on a transparent substrate, such a display is at least partially transparent making it useful for heads-up display applications in airplanes and automobiles. Such a display can also be fabricated on an opaque substrate, such as silicon, in which previously fabricated devices and circuits can be used to drive the display.
摘要翻译：公开了具有透明阴极结构的有机发光二极管。该结构由与宽带隙半导体层覆盖的OLED的电子传输层直接接触的低功函数金属组成。由于金属具有相对较高的透光率，因此，由于已证明能够与有机材料形成良好的电子注入接触，钙是优选的金属。 ZnSe，ZnS或这些材料的合金是优选的半导体，因为它们具有与光发射方向平行的良好导电性，它们保护下层低功函数金属和有机膜的能力及其对发射光的透明度。这些二极管的数组，适当连接，可用于进行自发光显示。当在透明基板上制造时，这种显示器至少部分透明，使其对于在飞机和汽车中的单机显示应用是有用的。这种显示器也可以在诸如硅的不透明衬底上制造，其中可以使用先前制造的器件和电路来驱动显示器。

107. 发明授权

US08999458B2 Method and apparatus for fabricating or altering microstructures using local chemical alterations 有权
标题翻译：使用局部化学改变制造或改变微结构的方法和装置
公开(公告)号：US08999458B2
公开(公告)日：2015-04-07
申请号：US13447982
申请日：2012-04-16
申请人： Supratik Guha , Hendrik F. Hamann , Herschel M. Marchman , Robert J. Von Gutfeld
发明人： Supratik Guha , Hendrik F. Hamann , Herschel M. Marchman , Robert J. Von Gutfeld
IPC分类号： C23C8/00 , H01L21/768 , H01L21/311 , H01L21/3213 , H01L29/66 , H01L29/786
CPC分类号： H01L21/76892 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L21/32135 , H01L29/66742 , H01L29/78684 , Y10S977/855 , Y10S977/857 , Y10S977/89 , Y10S977/891 , Y10S977/892
摘要： A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure.
摘要翻译：一种用于制造或改变微结构的方法和装置，用于加热以促进形成或改变亚微结构的局部化学反应。

108. 发明授权

US08987693B2 High density memory device 有权
标题翻译：高密度存储器件
公开(公告)号：US08987693B2
公开(公告)日：2015-03-24
申请号：US13570390
申请日：2012-08-09
申请人： Tymon Barwicz , Keith A. Jenkins , Supratik Guha
发明人： Tymon Barwicz , Keith A. Jenkins , Supratik Guha
IPC分类号： H01L47/00 , G11C11/404 , H01L49/02 , G11C13/00 , H01L49/00
CPC分类号： G11C11/404 , G11C13/0007 , H01L28/40 , H01L49/003
摘要： A method of operating a memory device having a dielectric material layer, a transition metal oxide layer and a set of electrodes each formed over a substrate, includes applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device.
摘要翻译：一种操作具有介电材料层，过渡金属氧化物层和一组电极的存储器件的方法，每个形成在衬底上，包括在整个电极组上施加电压，从而在过渡金属氧化物层上产生电场，从而能够过渡金属氧化物层进行金属绝缘转变（MIT）以对存储器件执行读或写操作。

109. 发明申请

US20140038344A1 THIN FILM SOLAR CELLS 有权
标题翻译：薄膜太阳能电池
公开(公告)号：US20140038344A1
公开(公告)日：2014-02-06
申请号：US13564244
申请日：2012-08-01
申请人： Nestor A. Bojarczuk , Keith E. Fogel , Supratik Guha , Byungha Shin
发明人： Nestor A. Bojarczuk , Keith E. Fogel , Supratik Guha , Byungha Shin
IPC分类号： H01L31/0328 , H01L31/18 , H01L21/36
CPC分类号： H01L31/0326 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0392 , H01L31/03925 , H01L31/03926 , H01L31/072 , H01L31/073 , H01L31/1896 , Y02E10/50 , Y02E10/543 , Y02P70/521
摘要： Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS2) between the layer of CZTS and the first layer of Mo. The method includes forming a back contact on a first surface of the CZTS layer opposite the first Mo layer and separating the first Mo layer and the MoS2 layer from the CZTS layer to expose a second surface of the CZTS layer opposite the first surface. The method further includes forming a buffer layer on the second surface of the CZTS layer.
摘要翻译：实施例涉及一种方法，包括在第一钼层（Mo）上形成一层铜硫化锌（CZTS），并对CZTS层和第一Mo层进行退火，以形成一层二硫化钼（MoS2） CZTS和第一层Mo。该方法包括在与第一Mo层相对的CZTS层的第一表面上形成背接触，并将第一Mo层和MoS2层与CZTS层分离以暴露CZTS的第二表面层与第一表面相对。该方法还包括在CZTS层的第二表面上形成缓冲层。

110. 发明申请

US20130013206A1 Meteorological Parameter Forecasting 有权
标题翻译：气象参数预测
公开(公告)号：US20130013206A1
公开(公告)日：2013-01-10
申请号：US13176099
申请日：2011-07-05
申请人： Supratik Guha , Hendrik F. Hamann , Levente Klein
发明人： Supratik Guha , Hendrik F. Hamann , Levente Klein
IPC分类号： G06F19/00
CPC分类号： G01W1/10 , G01W2001/006 , Y02A90/14
摘要： A method, an apparatus and an article of manufacture for forecasting a meteorological parameter. The method includes analyzing geographically distributed sensor network data to assess spatial and temporal variation of a meteorological parameter in real-time, correlating at least two portions of data from the sensor network to identify a temporal and spatial evolution of the meteorological parameter, and forecasting the meteorological parameter based on the temporal and spatial evolution of the meteorological parameter.
摘要翻译：一种用于预测气象参数的方法，装置和制品。该方法包括分析地理分布的传感器网络数据，以实时评估气象参数的空间和时间变化，将来自传感器网络的数据的至少两部分相关联，以识别气象参数的时间和空间演化，并预测基于气象参数时空演化的气象参数。

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