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101. 发明专利

JP2002076844A PHASE SHIFT CIRCUIT AND PHASE SHIFTER 失效
公开(公告)号：JP2002076844A
公开(公告)日：2002-03-15
申请号：JP2001049293
申请日：2001-02-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAGUCHI KENICHI , HIEDA MORISHIGE , NAKAHARA KAZUHIKO , TAKAGI SUNAO , TANIGUCHI EIJI , IYAMA YOSHITADA , KASAHARA MICHIAKI
IPC分类号： H01P1/185 , H03H7/20 , H03H11/20
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional phase shift circuit that has caused mismatching due to the effect of a sub line and inter-base capacitance resulting in deteriorating its reflection characteristic when the longer sub line is configured. SOLUTION: In the phase shift circuit provided with a FET 5 that is placed between an input terminal 2 and an output terminal 3 and ON/OFF-switched in response to a control signal and with the sub line 4b connected in parallel between an input electrode and an output electrode of the FET 5, a capacitive element is connected between at least either of the input electrode and the output electrode of the FET 5 and ground.

102. 发明专利

JP2002076810A PHASE SHIFTER 失效
公开(公告)号：JP2002076810A
公开(公告)日：2002-03-15
申请号：JP2000264003
申请日：2000-08-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAHARA KAZUHIKO , MIYAGUCHI KENICHI , HIEDA MORISHIGE , TAKAGI SUNAO
IPC分类号： H01P1/18 , H03H7/20 , H03H11/18
摘要： PROBLEM TO BE SOLVED: To provide a phase shifter that is configured with a combination of a high pass filter and a low pass filter not susceptible to the effect of manufacturing variance so as to uniformize the quality of phase shift for the mass- products. SOLUTION: The phase shifter 11 is configured with a combination of a T-form high pass filter 2 and a π-form low pass filter 13 where dispersion in the capacitance of capacitors Ch, C1 is less affected. Dispersion in the quality of phase shift in mass-production of the phase shifters can most effectively be suppressed.

103. 发明专利

JP2002050901A VARIABLE DELAY CIRCUIT 失效
公开(公告)号：JP2002050901A
公开(公告)日：2002-02-15
申请号：JP2000235504
申请日：2000-08-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIEDA MORISHIGE , MIYAGUCHI KENICHI , NAKAHARA KAZUHIKO , TAKAGI SUNAO
IPC分类号： H01P1/18
摘要： PROBLEM TO BE SOLVED: To provide a small sized variable delay circuit, which can set a delay time to an arbitrary value without requiring a line having the length proportional to the delay time. SOLUTION: The small sized variable delay circuit comprises: a first line 2a and a second line 2c; and a line 2b, one terminal of which is connected to a point between the first line 2a and the second line 2c through a FET 3, the other terminal of which is open, and a length of which is λg/2 (λg: the wavelength in a line that forms a stub).

104. 发明专利

JP2001320170A MULTILAYER SUBSTRATE MODULE 失效
公开(公告)号：JP2001320170A
公开(公告)日：2001-11-16
申请号：JP2000137599
申请日：2000-05-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA KENICHI , ONO MASAYOSHI , SUEMATSU KENJI , TAKAGI SUNAO , ITO KENJI , KATSURA TAKATOSHI
IPC分类号： H05K1/11 , H01P3/08 , H03F3/60 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To solve the problem of a conventional multilayer substrate module such that there is a possibility of a circuit oscillating due to the occurrence of an inductance component between an earth and a common ground layer to which the through holes for ground of an amplifier and a matching circuit are connected in common. SOLUTION: A multilayer substrate module is equipped with a multilayer substrate 1, a semiconductor substrate 4 equipped with an amplifier and matching circuits 5 and 6 provided at the surface of the multilayer substrate 1, an earth 11, a through hole 13 for ground for connecting a lead wire for ground of the amplifier with the earth 11, and through holes 12 and 14 for ground for connecting the lead wires for ground of those matching circuits with the earth 11 severally made separately in every matching circuit.

105. 发明专利

JPH11340724A PHASED ARRAY ANTENNA 失效
公开(公告)号：JPH11340724A
公开(公告)日：1999-12-10
申请号：JP14177798
申请日：1998-05-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： OHASHI HIDEMASA , MIYAZAKI MORIYASU , URASAKI SHUJI , TAKAGI SUNAO , KOMARU MAKIO , AOKI KATSUHIKO
IPC分类号： H01Q3/26 , H01Q3/28 , H01Q3/36 , H01Q3/38 , H01Q23/00
摘要： PROBLEM TO BE SOLVED: To provide a compact and inexpensive antenna even for high frequencies such as a milli-wave band by providing a control module for simultaneously controlling the amplitude and phase of an intermediate frequency signal, and a means for connecting a local signal and the intermediate frequency signal between a high frequency module and the control module. SOLUTION: Plural high frequency modules 500 are provided with frequency converters 8 to be connected with plural antenna elements 6 and distributing circuits for supplying a local signal to the frequency converter 8. A control module 510 is provided with a local signal supplying means 9b for supplying a local signal for frequency conversion to plural high frequency modules, intermediate frequency signal distributing and synthesizing means for distributing and synthesizing the intermediate frequency signals inputted to and outputted from the high frequency module 500, and control means for simultaneously controlling the amplitude and phase of the intermediate frequency signal. Connecting means 3 and 4 connect the local signal and the intermediate frequency signal between the plural high frequency modules 500 and the control module 510.

106. 发明专利

JPH10135750A MICROWAVE BAND AMPLIFIER 失效
公开(公告)号：JPH10135750A
公开(公告)日：1998-05-22
申请号：JP29162596
申请日：1996-11-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIMURA TERUYUKI , MIURA TAKESHI , TAKAGI SUNAO
IPC分类号： H03F3/60 , H03F1/32 , H03F3/195
摘要： PROBLEM TO BE SOLVED: To provide a microwave band amplifier which excels in the distortion characteristics by grounding the bipolar transistors of the preceding and next stages via their emitters or bases and actuating one of both transistors in a base current constant mode and the other in a base voltage constant mode respectively. SOLUTION: A bipolar transistor TR 1 of the preceding stage is actuated in a base current constant mode, and a bipolar TR 2 of the next stage is actuated in a base voltage constant mode. Thus, the phase rotates in the positive direction at the preceding stage and then rotates in the negative direction at the next stage respectively. As a result, both modes are canceled with the total phase of an amplifier and it's possible to secure a state where the phase of the output power Pout of the next stage does not rotate at all to the input power Pin of the preceding stage. As the rotation of the phase produced at the preceding stage is canceled by the rotation of the phase of the next stage, the rotation of the total phase of the amplifier can be suppressed. In such a constitution, a microwave band amplifier which excels in the distortion characteristic is obtained.

107. 发明专利

JPH0832376A MICROWAVE SEMICONDUCTOR AMPLIFIER 失效
公开(公告)号：JPH0832376A
公开(公告)日：1996-02-02
申请号：JP18636194
申请日：1994-07-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： MOCHIZUKI MITSURU , MORI KAZUTOMI , ITO YASUYUKI , TAKAGI SUNAO , KONO MASAKI , TSUJI SEIICHI
IPC分类号： H03F3/60 , H03F3/68
摘要： PURPOSE:To obtain the semiconductor amplifier without abnormal amplification by a loop oscillation with a component of a frequency f0/2. CONSTITUTION:The oscillation is prevented by absorbing a component of a frequency f0/2 generated in a closed loop 12 comprising semiconductor elements 1a, 1b in parallel operation, an input matching circuit 10 and an output matching circuit 11 with resistance circuits each connecting to a position of the closed loop 12 opposed to each other in the micro wave semiconductor amplifier comprising the input matching circuit 10, the semiconductor element 1(1a, 1b) and the output matching circuit 11.

108. 发明专利

JPH05304428A 失效
公开(公告)号：JPH05304428A
公开(公告)日：1993-11-16
申请号：JP13178792
申请日：1992-04-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO YASUYUKI , MOCHIZUKI MITSURU , TAKAGI SUNAO
IPC分类号： H03F3/60
摘要： PURPOSE:To improve the setting accuracy of variation of gain regardless of the dispersion of plural FET processes. CONSTITUTION:Dual gates FET 15 to 19 having different gate widths, respectively, are used as an FET to be connected between a transmission line 4 and a transmission line 6 and bias circuits 20 to 24 are independently provided between a second gate terminal G2 of the dual gates FET 15 to 19 and a ground. The second gate voltage of the dual gates FET 15 to 19 is possible to be digitally controlled so that the current of the FET 15 to 19 may be saturated or pinched-off.

109. 发明专利

JPH05251962A 失效
公开(公告)号：JPH05251962A
公开(公告)日：1993-09-28
申请号：JP5030392
申请日：1992-03-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO YASUYUKI , MOCHIZUKI MITSURU , TAKAGI SUNAO
IPC分类号： H03F1/42 , H03F3/60
摘要： PURPOSE:To improve reflecting characteristic and band characteristic of the amplifier. CONSTITUTION:The amplifier is provided with an input terminal 1, an output terminal 2, a 1st transmission line 4 connecting to the input terminal 1, a 2nd transmission line 5 connecting to the output terminal 2, a common source field- effect transistor 3 or a common emitter transistor(TR) whose drain terminal or collector terminal connects to the 2nd transmission line 5, and field-effect transistors 16, 17 whose gate bias is variable or a TR whose base bias is variable connecting to ground via capacitor elements 16, 17 provided to a 1st terminal 20 of the 1st transmission line opposite to the input terminal 1 or to a 2nd terminal 21 of the 2nd transmission line opposite to the output terminal 2.

110. 发明专利

JPH05129854A WIDE BAND FET AMPLIFIER 失效
公开(公告)号：JPH05129854A
公开(公告)日：1993-05-25
申请号：JP28771791
申请日：1991-11-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： MOCHIZUKI MITSURU , ITO YASUYUKI , ISO YOUJI , TAKAGI SUNAO
IPC分类号： H03F3/193 , H03F3/60 , H03F3/68
摘要： PURPOSE:To obtain the wide band field effect transistor (FET) amplifier simplifying and miniaturizing the respective bias impressing circuits of FET to be parallelly operated. CONSTITUTION:At the FET amplifier equipped with the FET of source grounding to be parallelly operated, input matching circuit 38 and output matching circuit 40, parallel resonance circuits are mounted on the output side or input side or the output and input sides of FET 1a, 1b, 2a and 2b in the first and second steps so as to execute matching over a wide band, one terminal of capacitic or induced stubs in the resonance circuits provided in the respective adjacent FET to be parallelly operated is connected each other and therefore, the respective biases of the FET can be impressed from one terminal for each step.

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