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101. 发明授权

US07385293B2 Copper alloy, fabrication method thereof, and sputtering target 有权
标题翻译：铜合金，其制造方法和溅射靶
公开(公告)号：US07385293B2
公开(公告)日：2008-06-10
申请号：US11229721
申请日：2005-09-20
申请人： Masao Mizuno , Takashi Onishi
发明人： Masao Mizuno , Takashi Onishi
IPC分类号： H01L23/48
CPC分类号： H01L21/2855 , C22C9/00 , C23C14/165 , C23C14/3414 , C23C14/5806 , H01L21/76882
摘要： A Cu alloy for semiconductor interconnections contains at least one selected from the group consisting of 0.10 to 10 atomic percent of Sb, 0.010 to 1.0 atomic percent of Bi, and 0.01 to 3 atomic percent of Dy, with the balance being Cu and inevitable impurities. The Cu alloy can be reliably embedded in narrow trenches and/or via holes for interconnections.
摘要翻译：用于半导体互连的Cu合金含有选自由0.10〜10原子％的Sb，0.010〜1.0原子％的Bi和0.01〜3原子％的Dy，余量为Cu和不可避免的杂质的至少一种。 Cu合金可以可靠地嵌入狭窄的沟槽和/或用于互连的通孔中。

102. 发明申请

US20070145586A1 METAL THIN FILM FOR INTERCONNECTION OF SEMICONDUCTOR DEVICE, INTERCONNECTION FOR SEMICONDUCTOR DEVICE, AND THEIR FABRICATION METHOD 有权
标题翻译：用于半导体器件互连的金属薄膜，用于半导体器件的互连及其制造方法
公开(公告)号：US20070145586A1
公开(公告)日：2007-06-28
申请号：US11465626
申请日：2006-08-18
申请人： Takashi Onishi , Masao Mizuno , Mikako Takeda
发明人： Takashi Onishi , Masao Mizuno , Mikako Takeda
IPC分类号： H01L23/48
CPC分类号： H01L23/53233 , H01L21/2855 , H01L21/76882 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A metal thin film used in fabricating a damascene interconnection of a semiconductor device which exhibits excellent high temperature fluidity during high pressure annealing, and which can fabricate an interconnection for a semiconductor device which has a low electric resistance and stable high quality is provided. Also provided is an interconnection for a semiconductor device.More specifically, a metal thin film for use as an interconnection of a semiconductor device comprising a Cu alloy containing N at a content of not less than 0.4 at % to not more than 2.0 at %; and an interconnection for a semiconductor device fabricated by forming the metal thin film on an insulator film which is formed on a semiconductor substrate and which has grooves formed therein, and filling the metal thin film in the interior of the grooves by a high pressure annealing process are provided.
摘要翻译：提供了用于制造半导体器件的镶嵌互连的金属薄膜，其在高压退火期间表现出优异的高温流动性，并且可以制造具有低电阻和稳定高质量的半导体器件的互连。还提供了用于半导体器件的互连。更具体地说，一种用作半导体器件的互连的金属薄膜，其包含含有不小于0.4原子％至不大于2.0原子％的含有N的Cu合金; 以及通过在形成在半导体衬底上并形成有凹槽的绝缘体膜上形成金属薄膜而制造的半导体器件的互连，并且通过高压退火工艺在槽内填充金属薄膜被提供。

103. 发明授权

US07223976B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07223976B2
公开(公告)日：2007-05-29
申请号：US11437638
申请日：2006-05-22
申请人： Takashi Onishi
发明人： Takashi Onishi
IPC分类号： G01N21/88
CPC分类号： H01J37/02 , B82Y10/00 , B82Y40/00 , G01N23/2252 , H01J37/16 , H01J37/24 , H01J37/28 , H01J37/304 , H01J37/3174 , H01J2237/0213 , H01J2237/0225 , H01J2237/045 , H01J2237/16 , H01J2237/24415 , H01J2237/2445 , H01J2237/3175
摘要： The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.
摘要翻译：提供带电粒子束，其可以分解系统的内壁的污染而不被拆卸并在适当的维护时间上提供信息。通过测量由于带电粒子束或反冲电子的照射而从内壁发射的X射线的光谱，来识别系统内壁的污染水平。

104. 发明授权

US07208731B2 Charged particle beam apparatus 有权
公开(公告)号：US07208731B2
公开(公告)日：2007-04-24
申请号：US11437717
申请日：2006-05-22
申请人： Takashi Onishi
发明人： Takashi Onishi
IPC分类号： G01N21/88
CPC分类号： H01J37/02 , B82Y10/00 , B82Y40/00 , G01N23/2252 , H01J37/16 , H01J37/24 , H01J37/28 , H01J37/304 , H01J37/3174 , H01J2237/0213 , H01J2237/0225 , H01J2237/045 , H01J2237/16 , H01J2237/24415 , H01J2237/2445 , H01J2237/3175
摘要： The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

105. 发明申请

US20060289754A1 Charged particle beam apparatus 有权
公开(公告)号：US20060289754A1
公开(公告)日：2006-12-28
申请号：US11437717
申请日：2006-05-22
申请人： Takashi Onishi
发明人： Takashi Onishi
IPC分类号： G21K7/00
CPC分类号： H01J37/02 , B82Y10/00 , B82Y40/00 , G01N23/2252 , H01J37/16 , H01J37/24 , H01J37/28 , H01J37/304 , H01J37/3174 , H01J2237/0213 , H01J2237/0225 , H01J2237/045 , H01J2237/16 , H01J2237/24415 , H01J2237/2445 , H01J2237/3175
摘要： The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

106. 发明授权

US06331650B1 Method for manufacturing aminoalcohol 有权
标题翻译：制备氨基醇的方法
公开(公告)号：US06331650B1
公开(公告)日：2001-12-18
申请号：US09630608
申请日：2000-08-02
申请人： Jin Tokuyasu , Koichiro Isoue , Katsushi Nagareda , Takashi Onishi
发明人： Jin Tokuyasu , Koichiro Isoue , Katsushi Nagareda , Takashi Onishi
IPC分类号： C07C21100
CPC分类号： C07C213/02 , C07C215/08 , C07C215/12 , C07D307/22 , C07D309/14
摘要： An aminoalcohol is synthesized by reacting a cyclic hemiacetal expressed by Formula 1 (where n is 0 or 1; R1 and R2 are each a hydrogen atom, a monovalent saturated hydrocarbon group which is optionally substituted, or a monovalent aromatic group which is optionally substituted, or R1 and R2 are bonded together into a divalent saturated hydrocarbon group which is optionally substituted; and R3, R4, and R5 are each a hydrogen atom, a monovalent saturated hydrocarbon group which is optionally substituted, or a monovalent aromatic group which is optionally substituted), with hydrogen and any one of ammonia, a primary amine and secondary amine in the presence of a hydrogenation catalyst.
摘要翻译：通过使由式1（其中n为0或1; R 1和R 2各自为氢原子，任选取代的一价饱和烃基或任选取代的一价芳族基团）的环状半缩醛反应合成氨基醇，或R 1和R 2结合成为任选被取代的二价饱和烃基; R 3，R 4和R 5各自为氢原子，任选取代的一价饱和烃基或任选取代的一价芳族基）与氢气和氨，伯胺和仲胺中的任一种在氢化催化剂存在下反应。

107. 发明授权

US06206985B1 A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films 失效
标题翻译： A1合金膜和熔融A1合金溅射靶，用于沉积A1合金膜
公开(公告)号：US06206985B1
公开(公告)日：2001-03-27
申请号：US09385889
申请日：1999-08-30
申请人： Takashi Onishi , Kazuo Yoshikawa , Seiji Nishi , Seigou Yamamoto
发明人： Takashi Onishi , Kazuo Yoshikawa , Seiji Nishi , Seigou Yamamoto
IPC分类号： C22C2100
CPC分类号： C23C14/205 , C23C14/3414 , G02F1/133512 , G02F1/136286 , G02F2001/136295 , G11B7/2531 , G11B7/258 , G11B7/2585 , G11B11/10589 , H01L23/53219 , H01L29/45 , H01L29/456 , H01L29/78633 , H01L2924/0002 , Y10T428/1036 , Y10T428/12431 , Y10T428/12528 , Y10T428/12736 , Y10T428/31678 , H01L2924/00
摘要： An Al alloy film containing one kind or two or more kinds of alloy components selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and Mn in a total amount of 0.1 to 10 at %, and a melting Al alloy sputtering target for depositing the Al alloy film, wherein the above-mentioned film is used as a reflection film for an optical recording medium, a shading film for a liquid crystal display panel or for a solid image pickup device, and an Al alloy thin film line or electrode material for a semiconductor device.
摘要翻译：含有总量为0.1〜10原子％的选自Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和Mn中的一种或两种以上的合金成分的Al合金膜，用于沉积Al合金膜的熔化Al合金溅射靶，其中上述膜用作光学记录介质的反射膜，用于液晶显示面板的遮光膜或用于固体摄像装置，Al 合金薄膜线或用于半导体器件的电极材料。

108. 发明授权

US5932761A Process for producing branched aldehydes 失效
标题翻译：生产支化醛的方法
公开(公告)号：US5932761A
公开(公告)日：1999-08-03
申请号：US45772
申请日：1998-03-23
申请人： Toshihiro Omatsu , Masahiko Kitayama , Takashi Onishi
发明人： Toshihiro Omatsu , Masahiko Kitayama , Takashi Onishi
IPC分类号： C07C67/293 , C07C255/17 , C07C67/38 , C07C67/36
CPC分类号： C07C255/17 , C07C67/293
摘要： It is provided a process for industrially advantageously producing a branched aldehyde represented by the formula; ##STR1## �wherein Y represents an acyl group of two or more carbon atoms; and X represents an acyloxymethyl group represented by --CH.sub.2 OY' (where Y' represents an acyl group of two or more carbon atoms), cyano group or an alkoxycarbonyl group! which is useful as an intermediate for pharmaceuticals and agricultural chemicals, comprising subjecting an olefinic compound represented by the following formula; ##STR2## (wherein Y and X are the same as defined above), to the reaction with hydrogen and carbon monoxide in the presence of a rhodium compound and a tertiary organic phosphorus compound with an electronic parameter (.upsilon.-value) of 2080 to 2090 cm.sup.-1 or with a steric parameter (.theta.-value) of 150 to 180.degree..
摘要翻译：提供了一种工业上有利地生产由式表示的支链醛的方法; [其中Y表示两个或更多个碳原子的酰基; X表示-CH 2 YY'（其中Y'表示2个以上碳原子的酰基），氰基或烷氧基羰基]的酰氧基甲基，其可用作药物和农药的中间体，其包括使烯属由下式表示的化合物：（其中Y和X与上述定义相同）在具有2080至2090cm -1的电子参数（上限）值的铑化合物和叔有机磷化合物存在下与氢气和一氧化碳的反应或具有150至180°的空间参数（θ值）。

109. 发明授权

US5762992A Method of preventing a decrease in sweetness of thaumatin 失效
标题翻译：防止甜蛋白降低的方法
公开(公告)号：US5762992A
公开(公告)日：1998-06-09
申请号：US919267
申请日：1992-07-27
申请人： Masanori Takeuchi , Takashi Onishi , Hiroki Iida , Kazushi Sakaue , Takashi Ochi , Shiro Ohashi
发明人： Masanori Takeuchi , Takashi Onishi , Hiroki Iida , Kazushi Sakaue , Takashi Ochi , Shiro Ohashi
IPC分类号： A23L27/00 , A23L27/30 , A61K8/64 , A61K8/73 , A61K47/36 , A61Q11/00 , A23L1/236
CPC分类号： A61K8/736 , A23L27/31 , A23L27/70 , A61K8/645 , A61Q11/00
摘要： A method of preventing a decrease in sweetness of thamatin, characterized in that, chitosan or hydrolyzed chitosan is added to thaumatin in an amount which is effective for prevention of a decrease in sweetness of thaumatin.
摘要翻译：一种防止硫胺素甜度降低的方法，其特征在于，将壳聚糖或水解壳聚糖以对于防止甜蛋白降低有效的量加入到花露蛋白中。

110. 发明授权

US5302181A Oxide-dispersion-strengthened heat-resistant chromium-based sintered alloy 失效
标题翻译：氧化物分散强化耐热铬基烧结合金
公开(公告)号：US5302181A
公开(公告)日：1994-04-12
申请号：US868191
申请日：1992-04-14
申请人： Toshiaki Morichika , Takashi Onishi , Hiroshi Yamamoto , Koichi Yanai , Hiroyuki Araragi
发明人： Toshiaki Morichika , Takashi Onishi , Hiroshi Yamamoto , Koichi Yanai , Hiroyuki Araragi
IPC分类号： C21D1/00 , C22C1/04 , C22C1/10 , C22C27/06 , C22C32/00 , B22F9/00 , C22C29/12
CPC分类号： C22C32/0026
摘要： An oxide-dispersion-strengthened sintered alloy improved in oxidation resistance and compressive strength for use at high temperatures of at least 1350.degree. C. The alloy includes a matrix of a metal consisting substantially or predominantly of Cr, and 0.2 to 2.0% by weight of Y.sub.2 O.sub.3 uniformly dispersed in the matrix. The Y.sub.2 O.sub.3 as uniformly dispersed is up to 0.1 .mu.m in mean particle size.
摘要翻译：一种氧化物分散强化烧结合金，其耐氧化性和抗压强度提高至少在1350℃的高温下使用。该合金包括基本上或主要由Cr组成的金属基质和0.2-2.0重量％ Y2O3均匀分散在基质中。均匀分散的Y2O3平均粒径为0.1（my）m。

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