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101. 发明申请

US20060061830A1 Image reading apparatus 审中-公开
标题翻译：图像读取装置
公开(公告)号：US20060061830A1
公开(公告)日：2006-03-23
申请号：US10945441
申请日：2004-09-21
申请人： Jun Sakakibara
发明人： Jun Sakakibara
IPC分类号： H04N1/40
CPC分类号： H04N1/4097
摘要： Presence of a streak image in a sub-scanning direction with respect to the image signal of the document image photoelectrically converted by a photoelectric conversion unit which converts an image of a document scanned in a sub-scanning direction into an image signal for each line of a main scanning direction is detected, and an image signal of a pixel forming the streak image is corrected in the image signal of the document image photoelectrically converted by the photoelectric conversion unit in a case where it is detected that the streak image has been generated in the image signal of the document image.
摘要翻译：相对于通过光电转换单元光电转换的原稿图像的图像信号，在副扫描方向上存在条纹图像，该光电转换单元将在副扫描方向上扫描的原稿的图像转换为每行的图像信号检测到主扫描方向，并且在检测到已经生成条纹图像的情况下，在由光电转换单元光电转换的原稿图像的图像信号中校正形成条纹图像的像素的图像信号文件图像的图像信号。

102. 发明授权

US06972458B2 Horizontal MOS transistor 失效
标题翻译：水平MOS晶体管
公开(公告)号：US06972458B2
公开(公告)日：2005-12-06
申请号：US10729955
申请日：2003-12-09
申请人： Naohiro Suzuki , Jun Sakakibara , Yoshitaka Noda , Hitoshi Yamaguchi
发明人： Naohiro Suzuki , Jun Sakakibara , Yoshitaka Noda , Hitoshi Yamaguchi
IPC分类号： H01L29/41 , H01L21/336 , H01L21/8222 , H01L21/8234 , H01L21/8248 , H01L21/8249 , H01L21/84 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/49 , H01L29/732 , H01L29/739 , H01L29/76 , H01L29/78 , H01L29/786 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/66681 , H01L29/7394 , H01L29/7824 , H01L29/7825
摘要： A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.
摘要翻译：半导体器件包括在N - 硅层。在主表面的表层部分，在包括漏极N + SUP区域的区域中，N阱区形成得比漏极N + + SUP区域深，并与之接触与基地区P。形成沟槽，以从源极N +区域的漏极N + SUP区域的方向穿过基极P区域作为平面结构。栅极电极通过沟槽内部的栅极绝缘膜形成。

103. 发明授权

US06867456B2 Semiconductor device having high breakdown voltage without increased on resistance 失效
标题翻译：具有高击穿电压而不增加导通电阻的半导体器件
公开(公告)号：US06867456B2
公开(公告)日：2005-03-15
申请号：US10695811
申请日：2003-10-30
申请人： Jun Sakakibara
发明人： Jun Sakakibara
IPC分类号： H01L29/749 , H01L29/06 , H01L29/423 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/781 , H01L29/0634 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7831
摘要： A first trench is formed in a surface of an n+-type semiconductor substrate that forms a source region. A p-type base region, an n−-type drift region, and an n+-type drain region are deposited in this order in the first trench using epitaxial growth. A second trench extending from the source region to the drift region through the base region is formed in the surface. A gate insulating film and a gate electrode are formed on a surface defining the second trench. The n+-type drain region has a location where growing surfaces come together in epitaxial growth and where a defect is likely to occur, and the gate electrode lacks such a location and thus avoids an increase in normalized ON resistance. Therefore, the breakdown voltage remains high without increasing the ON resistance.
摘要翻译：在形成源极区域的n +型半导体衬底的表面中形成第一沟槽。使用外延生长，在第一沟槽中依次沉积p型基极区域，n +型漂移区域和n +型漏极区域。在表面上形成从源极区域延伸穿过基底区域到漂移区域的第二沟槽。在限定第二沟槽的表面上形成栅极绝缘膜和栅电极。 n +型漏极区域具有生长表面在外延生长中并且可能发生缺陷的位置，并且栅电极缺少这样的位置，因此避免了归一化导通电阻的增加。因此，在不增加导通电阻的情况下，击穿电压保持高电平。

104. 发明授权

US06836001B2 Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench 有权
标题翻译：具有外延填充沟槽的半导体器件和具有外延填充沟槽的半导体器件的制造方法
公开(公告)号：US06836001B2
公开(公告)日：2004-12-28
申请号：US10442196
申请日：2003-05-21
申请人： Shoichi Yamauchi , Hitoshi Yamaguchi , Jun Sakakibara , Nobuhiro Tsuji
发明人： Shoichi Yamauchi , Hitoshi Yamaguchi , Jun Sakakibara , Nobuhiro Tsuji
IPC分类号： H01L2904
CPC分类号： H01L29/781 , H01L29/045 , H01L29/0634 , H01L29/4232 , H01L29/4238 , H01L29/66674 , H01L29/7801 , H01L29/7813
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.
摘要翻译：半导体器件包括半导体衬底和半导体层。半导体衬底具有作为Si {100}表面的主表面。基板在主表面具有沟槽。半导体层位于限定沟槽的表面上，以与半导体衬底具有共同的结晶平面。沟槽由底面，彼此面对的两个长侧壁表面和彼此相对的两个短侧壁表面限定。底表面和长侧壁表面是Si {100}表面。

105. 发明授权

US06426767B1 Image forming apparatus for maintaining a constant beam scanning state 失效
标题翻译：用于保持恒定光束扫描状态的图像形成装置
公开(公告)号：US06426767B1
公开(公告)日：2002-07-30
申请号：US09750292
申请日：2000-12-29
申请人： Koji Tanimoto , Kenichi Komiya , Jun Sakakibara , Koji Kawai
发明人： Koji Tanimoto , Kenichi Komiya , Jun Sakakibara , Koji Kawai
IPC分类号： G03G1501
CPC分类号： H04N1/233 , G03G2215/0119 , H04N1/1135 , H04N1/12 , H04N1/2369 , H04N1/295 , H04N1/506 , H04N2201/0471 , H04N2201/04729 , H04N2201/04744 , H04N2201/33378
摘要： An image forming apparatus maintains a constant beam scanning state so that light beams scan each drum always in the same state once a desired color overlapping accuracy is obtained by controlling color registration in color image formation. This mechanism achieves constantly fine color overlapping without forming a test pattern several times or consuming toner unnecessarily. A beam passage switch is provided in a laser scanning system. Sensors provided near each photosensitive drum determine whether each light beam has scanned a certain portion with no inclination or a certain scanning area, or whether each image magnification provides a desired size. Sensors for detecting scanning light beam obtains the center of light beam in accordance with information on a point at which the sensors start to respond and another point at which they cease responding, for performing several types of control based on the positional information, which provides correct information even though the size or power is different over sevral light beam.
摘要翻译：图像形成装置保持恒定的光束扫描状态，使得一旦通过控制彩色图像形成中的颜色配准获得期望的颜色重叠精度，光束将始终处于相同的状态。这种机制实现了不间断地形成测试图案多次或不必要地消耗调色剂的颜色重叠。光束通过开关设置在激光扫描系统中。设置在每个感光鼓附近的传感器确定每个光束是否扫描没有倾斜或某个扫描区域的某个部分，或者每个图像放大是否提供期望的尺寸。用于检测扫描光束的传感器根据关于传感器开始响应的点的信息和其停止响应的另一个点获得光束中心，用于基于提供正确的位置信息执行几种类型的控制信息即使大小或功率不同于三光束。

106. 发明授权

US06191007B1 Method for manufacturing a semiconductor substrate 失效
标题翻译：半导体基板的制造方法
公开(公告)号：US06191007B1
公开(公告)日：2001-02-20
申请号：US09066971
申请日：1998-04-28
申请人： Masaki Matsui , Shoichi Yamauchi , Hisayoshi Ohshima , Kunihiro Onoda , Akiyoshi Asai , Takanari Sasaya , Takeshi Enya , Jun Sakakibara
发明人： Masaki Matsui , Shoichi Yamauchi , Hisayoshi Ohshima , Kunihiro Onoda , Akiyoshi Asai , Takanari Sasaya , Takeshi Enya , Jun Sakakibara
IPC分类号： H01L21331
CPC分类号： H01L21/84 , H01L21/02667 , H01L21/2022 , H01L21/76243 , H01L21/76254 , H01L21/76264 , H01L21/76267 , H01L21/76275 , H01L21/76281 , H01L21/76283 , H01L2221/68363
摘要： Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.
摘要翻译：制造半导体衬底的方法，其中半导体器件用于形成半导体器件的半导体层形成在支撑衬底上，绝缘膜介于其之间，在形成掩埋图案结构的衬底上形成半导体层是可能的大大增加了半导体层的膜厚均匀性和膜厚可控性，特别是当半导体层被形成为极薄膜时。结果，可以实现半导体衬底的改进的质量和特性，并且可以将这种半导体衬底部署到各种用途上。

107. 发明授权

US5751041A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5751041A
公开(公告)日：1998-05-12
申请号：US732995
申请日：1996-10-16
申请人： Megumi Suzuki , Akiyoshi Asai , Jun Sakakibara
发明人： Megumi Suzuki , Akiyoshi Asai , Jun Sakakibara
IPC分类号： H01L21/761 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/786 , H01L27/01 , H01L23/62
CPC分类号： H01L21/8221 , H01L27/0688 , H01L2924/0002
摘要： In a semiconductor integrated circuit device having an input protection circuit element such as a diode formed in the semiconductor substrate, the leak current is suppressed. An nMOS transistor and a pMOS transistor that constitute a CMOS inverter circuit are formed using a SOI structure. An n-type diffusion layer and p-type diffusion layer are formed within the semiconductor substrate to thereby construct a protective diode that forms an input protection circuit for the CMOS inverter circuit. By surrounding the outer periphery of the n-type diffusion layer with the p-type diffusion layer, the depletion layer that is formed at an interface between the semiconductor substrate and a buried insulation film therein is cut off by the p-type diffusion layer, thereby suppressing the leak current between the n-type diffusion layer and the p-type diffusion layer.
摘要翻译：在半导体衬底中具有诸如二极管的输入保护电路元件的半导体集成电路器件中，泄漏电流被抑制。使用SOI结构形成构成CMOS反相器电路的nMOS晶体管和pMOS晶体管。在半导体衬底内形成n型扩散层和p型扩散层，从而构成形成CMOS反相器电路的输入保护电路的保护二极管。通过用p型扩散层围绕n型扩散层的外周，通过p型扩散层切断在半导体衬底和其中的掩埋绝缘膜之间的界面处形成的耗尽层，从而抑制n型扩散层和p型扩散层之间的漏电流。

108. 发明授权

US5450464A X-ray diagnostic apparatus capable of aligning examined spot in real timing with flow of image forming agent 失效
标题翻译： X射线诊断装置能够将检测出的实时定位点与图像形成剂的流动对齐
公开(公告)号：US5450464A
公开(公告)日：1995-09-12
申请号：US194388
申请日：1994-02-10
申请人： Jun Sakakibara
发明人： Jun Sakakibara
IPC分类号： A61B6/00 , A61B6/04 , H04N5/32 , H05G1/60 , H05G1/64
CPC分类号： A61B6/481 , A61B6/504 , H04N5/32 , H05G1/60
摘要： An X-ray diagnostic apparatus capable of automatically and accurately moving the supporting member in strict accordance with flow of an image forming agent injected into a blood vessel of patient. The X-ray diagnosis apparatus includes a bed on which the patient is placed to be examined; an X-ray generating unit for generating and transmitting an X-ray toward the patient; an X-ray image photographing unit, for photographing an X-ray image radiated through the patient; a display monitor for displaying an image photographed by the X-ray photographing unit; a flow-rate measuring system for measuring a flowing rate of the image forming agent according to the X-ray image photographed; and a position-changing device for automatically changing a spot of the patient to be photographed by the photographing unit according to the flowing rate measured by the flow-rate measuring system.
摘要翻译：一种X射线诊断装置，其能够根据注入到患者的血管内的成像剂的流动自动且准确地移动支撑部件。 X射线诊断装置包括：患者被放置在其上进行检查的床; X射线产生单元，用于产生并向患者发射X射线; X射线图像拍摄单元，用于拍摄通过患者辐射的X射线图像; 用于显示由所述X射线摄影单元拍摄的图像的显示监视器; 流量测量系统，用于根据所拍摄的X射线图像测量图像形成剂的流动速率; 以及位置改变装置，用于根据由流量测量系统测量的流动速率自动改变由拍摄单元拍摄的患者的斑点。

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