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101. 发明专利

JPH1095849A SEMICONDUCTOR DEVICE, ITS PRODUCTOR, AND SURFACE PROTECTION FILM 失效
公开(公告)号：JPH1095849A
公开(公告)日：1998-04-14
申请号：JP13235497
申请日：1997-05-22
申请人： HITACHI LTD
发明人： TANAKA JUN , KATAOKA FUMIO , TAKEMOTO KAZUNARI , YOSHIKAWA HARUHIKO , ISODA KEIKO
IPC分类号： C08G73/10 , H01L23/29 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To obtain a polyimide precursor which enables a high-definition development in a short time with a water soln. and is suitable for forming a protection film for the surface of a semiconductor element by adopting a molecular structure contg. specific repeating units. SOLUTION: In a semiconductor device having a semiconductor element covered with a surface protection film and an external terminal for connecting to the outside, the surface protection film is formed from a polyimide obtd. by thermally curing a polyimide precursor compsn. contg. a first polyimide precursor having repeating units represented by formula I (wherein R is a 4C or higher tetravalent org. group; R is a tri- or tetravalent org. group having an arom. ring; R is a monovalent org. group; A is a monovalent acidic group; and n is 1 or 2). The first polyimide precursor may further contain repeating units represented by formula II (wherein R and R are each the same as in formula I; and R is a divalent org. group having an arom. ring or a silicon atom). The number of repeating units repersented by formula I is set at 10% or higher of the sum of the numbers of repeating units represented by formulas I and II.

102. 发明专利

JPH09188762A PRODUCTION OF PHOTOSENSITIVE POLYIMIDE PRECURSOR, AMIDATION OF POLYMER AND AMIDATION CATALYST OF POLYMER 失效
公开(公告)号：JPH09188762A
公开(公告)日：1997-07-22
申请号：JP251596
申请日：1996-01-10
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： YOSHIKAWA HARUHIKO , TAKEMOTO KAZUNARI , TANAKA JUN , ISODA KEIKO , KATAOKA FUMIO , UCHIMURA SHUNICHIRO
IPC分类号： G03F7/027 , C08G18/34 , C08G69/26 , C08G69/28 , C08G73/10 , G03F7/038
摘要： PROBLEM TO BE SOLVED: To obtain the above precursor useful for providing a final cured film having good storage stability and excellent mechanical characteristics by reacting an isocyanate compound having carbon double bond with a polyamic acid in the presence of a catalyst. SOLUTION: (A) A polyamic acid having a recurring unit of formula I (R' is >=4C quadrivalent organic group; R is a divalent aromatic group or an Si- containing divalent organic group) is reacted with (B) an isocyanate compound of formula II (R to R are each independently H, an alkyl, phenyl, vinyl or propenyl; R is a divalent organic group) by using (C) phosphine oxide as a catalyst to provide the objective precursor having a recurring unit of formula III. The component C includes e.g. 3-methyl-1-phenyl-3 phosphorene 1 oxide.

103. 发明专利

JPH09161253A DRY ETCHING METHOD AND PRODUCTION OF MAGNETIC HEAD SLIDER 失效
公开(公告)号：JPH09161253A
公开(公告)日：1997-06-20
申请号：JP31548795
申请日：1995-12-04
申请人： HITACHI LTD
发明人： MIZUSHIMA AKIKO , TAKEMOTO KAZUNARI , SUZUKI SABURO
IPC分类号： G11B5/31 , G11B5/60 , G11B21/21
摘要： PROBLEM TO BE SOLVED: To process a material into a desired complicated shape by using an org. silicon resin as a mask material for dry etching. SOLUTION: A slider block 2 is fixed to a jig 1. A photosensitive org. silicon- based resin 3 is applied on the face 2-1 of the slider to be processed, and baked. Then the org. silicon-based resin 3 is formed into a desired pattern of rail shape. The patterned org. silicon-based resin 4 is used a mask for dry etching to form slider rail shape. Finally, the mask 5 remaining on the slider is peeled and removed by using an org. solvent.

104. 发明专利

JPH0513323A PATTERN FORMATION METHOD AND THIN FILM MAGNETIC HEAD 失效
公开(公告)号：JPH0513323A
公开(公告)日：1993-01-22
申请号：JP15436591
申请日：1991-06-26
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , AMATATSU ATSUSHI , SONOBE HIDEKI , IKEDA HIROSHI
IPC分类号： C08J7/00 , C23C14/12 , C23F4/00 , G11B5/31 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To patternize the film on a high-step substrate accurately by physical etching such as ion milling, etc. CONSTITUTION:Patterns are transcribed in order by a laminate of a photosensitive deposited film 1, an Si film 4, and a carbon film 3, whereby the film 2 to be processed at the lower layer is made possible of etching with high accuracy. Since the deposited film is excellent in step coverage, the thickness of the resist can be thinned in the recess at the step, so it has the effect of preventing the readhesion in ion milling and improving dimensional accuracy.

105. 发明专利

JPH04182916A MAGNETIC HEAD AND MAGNETIC DISK DEVICE HAVING THIS MAGNETIC HEAD 失效
公开(公告)号：JPH04182916A
公开(公告)日：1992-06-30
申请号：JP31135990
申请日：1990-11-19
申请人： HITACHI LTD
发明人： KOKADO YUICHI , FUJIMAKI SHIGEHIKO , MATSUNUMA SATORU , TAKEMOTO KAZUNARI , KITO JUN
IPC分类号： G11B5/60 , G11B5/187 , G11B21/21
摘要： PURPOSE:To prevent the damage in the sliding part of a head with a magnetic head and to lessen a change in the coefft. of friction at the time of sliding by disposing a magnetic recording and reproducing element in proximity with the sliding surface of a slider and by forming a non-sliding surface, then coating the sliding surface of the slider with a specific amorphous carbon thin film. CONSTITUTION:The magnetic recording and reproducing element 3 is disposed in proximity to the sliding surface 2 of the slider and by forming the non-sliding surface. The sliding surface 2 of the slider is coated with the amorphous carbon thin film 4 contg. 1 to 30 atomic % hydrogen and having 1.7 to 2.2 density. The content of the hydrogen incorporated into the amorphous carbon thin film and the density of the carbon thin film affect the strength of the film and, therefore, the content of the hydrogen is further, preferably 3 to 15 atomic %. The sliding resistance characteristics on the magnetic head and magnetic disk side are improved in this way and the necessary reliability is assured even if the floating space between the magnetic disk and the magnetic head is decreased.

106. 发明专利

JPH0421913A PATTERN FORMING METHOD AND THIN FILM MAGNETIC HEAD FORMED BY THE METHOD 失效
公开(公告)号：JPH0421913A
公开(公告)日：1992-01-24
申请号：JP12556390
申请日：1990-05-17
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , AMATATSU ATSUSHI , KITO MAKOTO
IPC分类号： G11B5/31 , H01F41/14
摘要： PURPOSE:To form a pattern having high accuracy by forming the prescribed pattern on a thin film to be worked by masking and etching the pattern of a second layer principally composed of carbon on a first layer containing silicon. CONSTITUTION:On a thin film 2 to be worked formed on a substrate 1, a layer 3 containing silicon, layer 4 principally composed of carbon and layer 5 containing silicon are successively formed. Next on the layer 5, a layer 6 is formed to sense light or radial rays. Continuously, this layer 6 is formed to the prescribed pattern and with this as the mask, the layer 6 is removed by patterning the layer 5. Next, with the layer 5 as the mask, the layer 4 is patterned and with the layer 4 as the mask, the layer 3 is patterned. Afterwards, with the layers 4 and 3 as the masks, the film 2 is patterned. Finally, the layers 4 and 3 are removed. Thus, since a material containing silicon is used for the layer 3, adhesion between the film 2 and the layer 4 is improved, and the pattern can be formed without any omission and lack or the like.

107. 发明专利

JPH03120606A PATTERN FORMING METHOD AND THIN-FILM MAGNETIC HEAD FORMED BY USING THIS METHOD 失效
公开(公告)号：JPH03120606A
公开(公告)日：1991-05-22
申请号：JP25786089
申请日：1989-10-04
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , AMATATSU ATSUSHI , KITO MAKOTO
IPC分类号： G11B5/31 , H01L21/302
摘要： PURPOSE:To prevent the peeling between a thin film to be worked and a carbonaceous thin film and to prevent the drop-out, lack or deformation of patterns by transferring a resist pattern to a 2nd layer mainly consisting of C and etching the thin film with this pattern as a mask, thereby forming the prescribed pattern to the thin film to be worked. CONSTITUTION:A 1st layer 3 contg. Si is formed on the thin film 2 to be worked on a substrate 1 and after the 2nd layer 4 mainly consisting of the C is formed thereon, a 3rd layer 5 consisting of an org. high polymer which is sensitive to light or radiations and contains Si is formed on the 2nd layer 4. The prescribed pattern is formed on the 3rd layer 5 and the 2nd layer 4 is patterned with this pattern as a mask. After the 3rd layer 5 is removed, the 1st layer 3 is patterned with the pattern of the 2nd layer as a mask and the patterns are formed to the thin film 2 to be worked with the patterns of the 2nd layer 4 and the 1st layer 3 as a mask. The adhesiveness between the thin film 2 to be worked and the 2nd layer 4 is improved and the patterns free from the drop-out, lack or deformation are formed.

108. 发明专利

JPH03104010A FORMATION OF PATTERN 失效
公开(公告)号：JPH03104010A
公开(公告)日：1991-05-01
申请号：JP23993889
申请日：1989-09-18
申请人： HITACHI LTD
发明人： TAKEMOTO KAZUNARI , AMATATSU ATSUSHI , KITO MAKOTO
IPC分类号： G11B5/31 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To form patterns with higher accuracy by using the patterns trans ferred to a layer mainly consisting of C as a mask. CONSTITUTION:A 1st layer 3 contg. Cu is formed by a vapor deposition method, etc., on a thin film 2 to be worked on a substrate 1. The 2nd layer 4 mainly consisting of the C is similarly formed on the layer 3. The 3rd layer 5 which is sensitive to radiations and contains Si is formed on the layer 4 by the vapor deposition method, such as wet coating method, plasma polymn. method and vacuum vapor deposition method. The layer 5 is formed to the prescribed patterns by an ordinary lithography stage and with these patterns as a mask, the layer 4 is patterned by a dry etching method using O2. The etching rate of the layer 5 is required to be lower than at least the etching rate of the layer 4. The layer 5 is removed by a photoresist peeling agent. The layer 3 and the thin film 2 are patterned by ion etching and ion milling of excellent anisotropy with the patterns formed on the layer 4 as a mask. The layers 4, 3 are removed at need. The formation of the patterns with the higher accuracy is thus possible.

109. 发明专利

JPH03103447A SURFACE-MODIFICATION OF ORGANIC POLYMER 失效
公开(公告)号：JPH03103447A
公开(公告)日：1991-04-30
申请号：JP23993989
申请日：1989-09-18
申请人： HITACHI LTD
发明人： KITO MAKOTO , TAKEMOTO KAZUNARI , AMATATSU ATSUSHI
IPC分类号： C08J7/00
摘要： PURPOSE:To improve the paintability, adhesivity, printability, etc., of an organic polymer at a low cost by irradiating a surface of an organic polymer with plasma while keeping the surface at a high temperature. CONSTITUTION:The objective organic polymer is produced by heating a synthetic or natural polymer such as polyethylene, polyvinyl chloride or wool with an infrared lamp, etc., at 50-400 deg.C in vacuum and subjecting the hot surface to low-temperature plasma treatment by irradiating with low-frequency, high-frequency or microwave radiation.

110. 发明专利

JPH02247808A THIN FILM MAGNETIC HEAD AND ITS PRODUCTION 失效
公开(公告)号：JPH02247808A
公开(公告)日：1990-10-03
申请号：JP6621989
申请日：1989-03-20
申请人： HITACHI LTD
发明人： KAWABE TAKASHI , FUYAMA MORIAKI , NARUSHIGE SHINJI , KONUMA AKIRA , ASHIDA EIJI , MORIJIRI MAKOTO , YAMAZAKI HIDEKI , IKEDA HIROSHI , SONO YOUSUKE , TAKEMOTO KAZUNARI
IPC分类号： G11B5/31
摘要： PURPOSE:To decrease the variation in track width by using a thin film mask of a desired pattern on the upper part of a step for a track and using a thin photosensitive resin mask on the lower part of the step. CONSTITUTION:On a ceramic substrate 11, a lower magnetic film 12, gap film 13, etc., are formed and then an upper magnetic film 16 and alumina film 17 are formed. A positive-type photoresist is applied and made to have such a pattern to leave the photoresist 18 only on the upper part of the step. The resist 18 is used as a mask for etching the alumina film 17, and then removed from the substrate. Then a positive-type photoresist is applied again and made to have such a pattern to leave the resist 19 only on the lower part of the step. The upper magnetic film 16 is etched by using the alumina film 17 and the resist 19 as a mask. After removing the resist 19, the upper magnetic film 16 with desired pattern can be obtained.

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