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101. 发明申请

US20090256220A1 Low switching current MTJ element for ultra-high STT-RAM and a method for making the same 有权
标题翻译：用于超高STT-RAM的低开关电流MTJ元件及其制造方法
公开(公告)号：US20090256220A1
公开(公告)日：2009-10-15
申请号：US12082155
申请日：2008-04-09
申请人： Cheng T. Horng , Ru-Ying Tong , Yimin Guo
发明人： Cheng T. Horng , Ru-Ying Tong , Yimin Guo
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/883
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R is disclosed. The MTJ has a MgO tunnel barrier formed by natural oxidation to achieve a low RA, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0. There is a thin Ru capping layer for a spin scattering effect. The reference layer has a shape anisotropy and Hc substantially greater than that of the free layer to establish a “self-pinned” state. The free layer, capping layer and hard mask are formed in an upper section of a nanopillar that has an area substantially less than a lower pedestal section which includes a bottom electrode, reference layer, seed layer, and tunnel barrier layer. The reference layer is comprised of an enhanced damping constant material that may be an insertion layer, and the free layer has a low damping constant.
摘要翻译：公开了一种在实现高dR / R的同时使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有通过自然氧化形成的MgO隧道势垒以实现低RA，以及具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以使Jc0最小化。有一个薄的Ru覆盖层用于自旋散射效应。参考层具有形状各向异性，并且Hc基本上大于自由层的Hc以形成“自固定”状态。自由层，覆盖层和硬掩模形成在纳米柱的上部，其具有基本上小于包括底部电极，参考层，种子层和隧道势垒层的下基座部分的面积。参考层由增强的阻尼常数材料组成，其可以是插入层，并且自由层具有低阻尼常数。

102. 发明申请

US20090139908A1 Guided transport of magnetically labeled biological molecules and cells 有权
标题翻译：引导磁性标记的生物分子和细胞的运输
公开(公告)号：US20090139908A1
公开(公告)日：2009-06-04
申请号：US11999171
申请日：2007-12-04
申请人： Yuchen Zhou , Yimin Guo
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： B03C1/02
CPC分类号： B03C1/033 , B03C1/034 , B03C1/288 , B03C2201/18 , B03C2201/26
摘要： Presented herein is a method and devices for identifying biological molecules and cells labeled by small magnetic particles and by optically active dyes. The labeled molecules are typically presented in a biological fluid but are then magnetically guided into narrow channels by a sequential process of magnetically trapping and releasing the magnetic labels that is implemented by sequential synchronized reversing the magnetic fields of a regular array of patterned magnetic devices that exert forces on the magnetic particles. These devices, which may be bonded to a substrate, can be formed as parallel magnetic strips adjacent to current carrying lines or can be substantially of identical structure to trilayered MTJ cells. Once the magnetically labeled molecules have been guided into the appropriate channels, their optical labels can be detected by a process of optical excitation and de-excitation. The molecules are thereby identified and counted.
摘要翻译：本文提出的是用于鉴定由小磁性颗粒和光学活性染料标记的生物分子和细胞的方法和装置。标记的分子通常呈现在生物流体中，然后通过磁捕获和释放磁性标签的顺序过程被磁性引导到窄通道中，磁性标记通过顺序同步反转正在施加的图案化磁性装置的规则阵列的磁场来实现对磁性颗粒的力。这些可以结合到衬底的器件可以形成为与载流线相邻的平行磁条，或者可以与三层MTJ电池基本上具有相同的结构。一旦磁标记的分子被引导到适当的通道中，它们的光学标记可以通过光学激发和去激发的过程来检测。因此鉴定和计数分子。

103. 发明申请

US20090027811A1 Spin transfer MRAM device with reduced coefficient of MTJ resistance variation 审中-公开
标题翻译：自旋转移MRAM器件具有降低的MTJ电阻变化系数
公开(公告)号：US20090027811A1
公开(公告)日：2009-01-29
申请号：US11881627
申请日：2007-07-27
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： G11B5/33
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell is formed of a vertically or horizontally series connected sequence of N sub-cells, each sub-cell being an MTJ element. A statistical population of such multiple sub-cell unit cells has a variation of resistance that is less by a factor of N−1/2 than that of a population of single sub-cells. As a result, such unit cells have an improved read margin while not requiring an increase in the critical switching current.
摘要翻译：我们描述了使用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM单元的制造过程和结构。单元由N个子单元的垂直或水平串联连接的序列形成，每个子单元是MTJ元件。这种多个亚细胞单位细胞的统计群体具有小于单个亚细胞群的N-1/2因子的电阻变化。结果，这种单元电池具有改善的读取裕度，而不需要增加关键开关电流。

104. 发明授权

US07480173B2 Spin transfer MRAM device with novel magnetic free layer 有权
标题翻译：具有新颖无磁性层的自旋转移MRAM器件
公开(公告)号：US07480173B2
公开(公告)日：2009-01-20
申请号：US11717347
申请日：2007-03-13
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.
摘要翻译： CPP MTJ MRAM元件利用自旋角动量的传递作为改变自由层的磁矩方向的机构。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用包含被CoFeB层夹在中间的Ta或Hf薄层的新型自由层。该装置的特征在于DR / R的值在大约95％和105％之间。

105. 发明申请

US20080239589A1 Spin transfer MRAM device with novel magnetic synthetic free layer 有权
标题翻译：具有新型磁性合成自由层的自旋转移MRAM器件
公开(公告)号：US20080239589A1
公开(公告)日：2008-10-02
申请号：US11728491
申请日：2007-03-26
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/302
摘要： We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.
摘要翻译：我们描述了利用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM元件。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用具有三个铁磁层的新型合成自由层，其在成对配置中相互交换耦合。自由层包括内部铁磁体和两个外部铁磁性层，其中内层被铁磁交换耦合到一个外层并与另一个外层反耦合地进行反铁磁交换。在厚度优选小于0.4nm的Ta，Hf或Zr的超薄层上，铁磁耦合是非常强的。

106. 发明授权

US07394248B1 Method and structure to reset multi-element MTJ 有权
标题翻译：复位多元MTJ的方法和结构
公开(公告)号：US07394248B1
公开(公告)日：2008-07-01
申请号：US11888854
申请日：2007-08-02
申请人： Yimin Guo , Grace Gorman
发明人： Yimin Guo , Grace Gorman
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R15/20 , G01R33/098
摘要： The process margin for the manufacture of devices formed from multi-element MTJ or GMR devices has been widened by providing a method and structure to reset the magnetization directions of all pinned layers simultaneously so that their directions of magnetization become evenly distributed. This has the effect of minimizing non-linearity and hysteresis in these devices during their subsequent operation.
摘要翻译：通过提供一种同时复位所有被钉扎层的磁化方向以使其磁化方向均匀分布的方法和结构，扩大了由多元件MTJ或GMR器件形成的器件的制造工艺余量。这具有在其随后的操作期间最小化这些装置中的非线性和滞后的效果。

107. 发明授权

US07394123B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US07394123B2
公开(公告)日：2008-07-01
申请号：US11438179
申请日：2006-05-22
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。因此，线和无细胞层之间存在均匀的间隔。

108. 发明申请

US20080001207A1 Planar flux concentrator for MRAM devices 有权
公开(公告)号：US20080001207A1
公开(公告)日：2008-01-03
申请号：US11476495
申请日：2006-06-28
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L29/788
CPC分类号： H01L43/12 , G11C11/15 , H01L27/222
摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

109. 发明授权

US07287313B2 Method for preventing magnetic damage to a GMR head during back-end processing 失效
标题翻译：用于在后端处理期间防止对GMR头的磁损坏的方法
公开(公告)号：US07287313B2
公开(公告)日：2007-10-30
申请号：US11172297
申请日：2005-06-30
申请人： Yimin Guo , Li-Yan Zhu
发明人： Yimin Guo , Li-Yan Zhu
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3169 , G11B5/3173 , G11B5/3903 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F10/3268 , Y10T29/49021 , Y10T29/49034 , Y10T29/49036 , Y10T29/49037 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052
摘要： A method is provided for preserving the transverse biasing of a GMR (or MR) read head during back-end processing. In a first preferred embodiment, the method comprises magnetizing the longitudinal biasing layers of the read head in a transverse direction, so that the resulting field at the position of the transverse biasing layer places it in a minimum of potential energy which stabilizes its direction. The field of the longitudinal biasing layer is then reset to the longitudinal direction in a manner which maintains the transverse biasing direction. In a second embodiment, a novel fixture for mounting the read head during processing includes a magnetic portion which stabilizes the transverse bias of the read head. The two methods may be used singly or in combination.
摘要翻译：提供了一种用于在后端处理期间保持GMR（或MR）读取头的横向偏置的方法。在第一优选实施例中，该方法包括在横向上磁化读头的纵向偏置层，使得在横向偏置层的位置处的所得场将其置于稳定其方向的最小势能中。然后纵向偏置层的场以保持横向偏压方向的方式复位到纵向方向。在第二实施例中，用于在处理期间安装读取头的新型夹具包括稳定读取头的横向偏压的磁性部分。这两种方法可以单独使用或组合使用。

110. 发明申请

US20070243638A1 Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R 有权
标题翻译：为NiFe（自由）MTJ堆叠形成非磁性帽以增强dR / R的新方法
公开(公告)号：US20070243638A1
公开(公告)日：2007-10-18
申请号：US11404446
申请日：2006-04-14
申请人： Cheng Horng , Hui-Chuan Wang , Min Li , Ru-Ying Tong , Tong Zhao , Yimin Guo
发明人： Cheng Horng , Hui-Chuan Wang , Min Li , Ru-Ying Tong , Tong Zhao , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trilayer configuration may be employed where the Ta layer is sandwiched between an inner NiFeX layer and an outer Ru layer. The X component in NiFeX is preferably an element having an oxidation potential greater than Ni or Fe such as Mg, Hf, Zr, Nb, or Ta. NiFeX is preferably formed by co-sputtering a NiFe target with an X target at a forward power of about 200 W and 50 W, respectively. In an MRAM structure, the Mg content in NiFeMg may be increased to >50 atomic % to improve the gettering power of removing oxygen from the free layer.
摘要翻译：公开了一种MRAM阵列或TMR读取头中的MTJ，其中封盖层具有在NiFe自由层上的非磁性NiFeX内层和NiFeX层上的Ta层的双层结构，以改善dR / R并最小化磁致伸缩。任选地，可以采用三层结构，其中Ta层夹在内部NiFeX层和外部Ru层之间。 NiFeX中的X成分优选为具有大于Ni，Fe的氧化电位的元素，例如Mg，Hf，Zr，Nb或Ta。优选通过以约200W和50W的正向功率共同溅射具有X靶的NiFe靶来形成NiFeX。在MRAM结构中，NiFeMg中的Mg含量可以增加到> 50原子％以提高从自由层除去氧的吸气能力。

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