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    • 102. 发明专利
      AT101879T  未知
    • AT101879T
    • 1994-03-15
    • AT87311193
    • 1987-12-18
    • APPLIED MATERIALS INC
    • WANG DAVID NIN-KOU , WHITE JOHN M , LAW KAM S , LEUNG CISSY , UMOTOY SALVADOR P , COLLINS KENNETH S , ADAMIK JOHN A , PERLOV ILYA , MAYDAN DAN
    • C23C16/48 , C23C16/04 , C23C16/40 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/54 , C23F4/00 , C30B25/14 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/683
    • A high pressure, high throughput, single wafer, semiconductor processing reactor (10) is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor (16) and wafer fingers (20) which collectively remove the wafer (15) from a robot transfer blade (24) and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold (26) then return the wafer to the blade. A combined RF/gas feed-through device (36) protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold (26) is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust fases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressure including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone on in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 110. 发明专利
      DE68921234D1  未知
    • DE68921234D1
    • 1995-03-30
    • DE68921234
    • 1989-04-25
    • APPLIED MATERIALS INC
    • CHENG DAVID , MAYDAN DAN , SOMEKH SASSON , STALDER KENNETH R , ANDREWS DANA L , CHANG MEI , WHITE JOHN M , WONG JERRY YUEN KUI , ZEITLIN VLADIMIR J , WANG DAVID NIN-KOU
    • H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , C23F4/00
    • A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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