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101. 发明申请

US20080219682A1 IMAGE FORMING APPARATUS, CONTROLLER, COMPUTER READABLE MEDIUM AND IMAGE FORMING CONDITION ADJUSTMENT METHOD 有权
标题翻译：图像形成装置，控制器，计算机可读介质和图像形成条件调整方法
公开(公告)号：US20080219682A1
公开(公告)日：2008-09-11
申请号：US12024279
申请日：2008-02-01
申请人： Naoya YAMASAKI , Matsuyuki Aoki , Shunichiro Shishikura , Yasunori Unagida , Satoshi Tanaka
发明人： Naoya YAMASAKI , Matsuyuki Aoki , Shunichiro Shishikura , Yasunori Unagida , Satoshi Tanaka
IPC分类号： G03G15/00
CPC分类号： G03G15/5058 , G03G15/0131 , G03G15/5054 , G03G2215/00059 , G03G2215/00063 , G03G2215/00949
摘要： An image forming apparatus is provided with: an image forming unit that forms an image on a medium according an image forming condition; a speed changing unit that changes an image forming speed of the image forming unit between a plurality of image forming speeds including a first image forming speed; an adjusting unit that adjusts the image forming condition set in the image forming unit; a measuring unit that measures an elapsed state after the image forming condition is adjusted for the last time at the first image forming speed in the image forming unit, and outputs a measured value indicative of the elapsed state; and a determination unit that determines, according to the elapsed state, whether or not to adjust the image forming condition before the image forming unit starts forming an image at the first image forming speed.
摘要翻译：图像形成装置具有：图像形成单元，其根据图像形成条件在介质上形成图像; 变速单元，其将图像形成单元的图像形成速度改变为包括第一图像形成速度的多个图像形成速度; 调节单元，调整在图像形成单元中设置的图像形成条件; 测量单元，其在图像形成单元中以第一图像形成速度最后一次调整图像形成条件之后的经过状态，并输出表示经过状态的测量值; 以及确定单元，其根据经过状态确定在图像形成单元是否开始以第一图像形成速度形成图像之前调整图像形成条件。

102. 发明授权

US07420790B2 Integrated circuit with protection against electrostatic damage 失效
标题翻译：集成电路，防止静电损坏
公开(公告)号：US07420790B2
公开(公告)日：2008-09-02
申请号：US11299897
申请日：2005-12-13
申请人： Kumiko Takikawa , Satoshi Tanaka
发明人： Kumiko Takikawa , Satoshi Tanaka
IPC分类号： H02H3/20 , H02H3/22 , H02H9/04 , H01L23/60
CPC分类号： H01L27/0266 , H01L27/0255 , H01L27/0259 , H01L2924/0002 , H01L2924/00
摘要： An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from electrostatic damage.A high-frequency section of the IC is provided with a protection circuit including diode-connected transistors connected by multiple stages. In addition, there are applied the transistors in which elements thereof are isolated by insulator that can prevent thyristor operation.
摘要翻译：具有从高频带到低频带的多个频带的输入和输出的IC被保护免受静电损伤。 IC的高频部分设置有包括通过多级连接的二极管连接的晶体管的保护电路。此外，应用其中元件被绝缘体隔离的晶体管，其可以防止晶闸管操作。

103. 发明申请

US20080145961A1 Semiconductor Light Emitting Device and Manufacturing Method Thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080145961A1
公开(公告)日：2008-06-19
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

104. 发明授权

US07379728B2 Wireless communication system 有权
公开(公告)号：US07379728B2
公开(公告)日：2008-05-27
申请号：US11703803
申请日：2007-02-08
申请人： Kumiko Takikawa , Satoshi Tanaka , Yoshiyasu Tashiro
发明人： Kumiko Takikawa , Satoshi Tanaka , Yoshiyasu Tashiro
IPC分类号： H04B1/28 , H04B1/06
CPC分类号： H01L23/66 , H01L23/48 , H01L23/4952 , H01L23/49541 , H01L23/49575 , H01L24/06 , H01L27/0203 , H01L29/41708 , H01L2224/04042 , H01L2224/05093 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/06 , H01L2224/16225 , H01L2224/32225 , H01L2224/48247 , H01L2224/48465 , H01L2224/73204 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H03F3/19 , H03F3/68 , H03F2200/294 , H03F2200/429 , H03F2200/451 , H04B1/0075 , H04W52/52 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

105. 发明授权

US07369817B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07369817B2
公开(公告)日：2008-05-06
申请号：US11012120
申请日：2004-12-16
申请人： Kumiko Takikawa , Satoshi Tanaka , Takashi Hashimoto , Yoshiyuki Okabe
发明人： Kumiko Takikawa , Satoshi Tanaka , Takashi Hashimoto , Yoshiyuki Okabe
IPC分类号： H04B1/38
CPC分类号： H01L24/49 , H01L23/50 , H01L23/66 , H01L24/48 , H01L2223/6611 , H01L2223/6644 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/49176 , H01L2924/00014 , H01L2924/01013 , H01L2924/01015 , H01L2924/1305 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier and a receiving mixer included in a semiconductor integrated circuit for dual-band transmission/reception wherein the circuit of the low noise amplifier is provided at a position where the distance from the end of a pin outside the package of the low noise amplifier to the pad is the shortest; ground pins of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect each other.
摘要翻译：一种防止低噪声放大器和接收混频器的频率特性劣化的引脚布局，包括在用于双频带发送/接收的半导体集成电路中，其中低噪声放大器的电路设置在距离低端放大器封装外的引脚到焊盘最短; 两个低噪声放大器的接地引脚和高频信号引脚分别布置为不彼此相邻; 低噪声放大器的电源和接地引脚以及偏置电路的电源和接地引脚分别分开; 高频信号线不会相交。

106. 发明申请

US20070277146A1 Lithography simulation method, program and semiconductor device manufacturing method 失效
标题翻译：平版印刷模拟方法，程序和半导体器件制造方法
公开(公告)号：US20070277146A1
公开(公告)日：2007-11-29
申请号：US11802615
申请日：2007-05-24
申请人： Masaki Satake , Hiromitsu Mashita , Satoshi Tanaka
发明人： Masaki Satake , Hiromitsu Mashita , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G03F1/36 , G03F7/705 , G03F7/70666
摘要： A lithography simulation method which predicts the result that a pattern formed on a mask is transferred onto a sample by use of a simulation based on pattern data of the mask includes subjecting a mask layout containing a pattern whose periodicity is disturbed to the simulation. At this time, a calculation area of pattern data used for the simulation is set to an integral multiple of minimum periodic length of the mask layout.
摘要翻译：通过使用基于掩模的图案数据的模拟将掩模上形成的图案转移到样本上的结果的光刻仿真方法包括对包含周期性被扰乱的图案的掩模布局进行模拟。此时，将用于模拟的图案数据的计算区域设置为掩模布局的最小周期长度的整数倍。

107. 发明授权

US07295304B2 Mask defect inspecting method, semiconductor device manufacturing method, mask defect inspecting apparatus, defect influence map generating method, and computer program product 有权
标题翻译：掩模缺陷检查方法，半导体器件制造方法，掩模缺陷检查装置，缺陷影响图生成方法和计算机程序产品
公开(公告)号：US07295304B2
公开(公告)日：2007-11-13
申请号：US10654527
申请日：2003-09-04
申请人： Shinji Yamaguchi , Soichi Inoue , Satoshi Tanaka , Mari Inoue
发明人： Shinji Yamaguchi , Soichi Inoue , Satoshi Tanaka , Mari Inoue
IPC分类号： G01N21/00
CPC分类号： G03F1/84
摘要： A mask defect inspecting method comprises preparing detection sensitivities of defects on a plurality of portions of a mask pattern on a photomask, the detection sensitivities being determined according to influences of the defects upon a wafer, and inspecting defects on the plurality of portions based on the detection sensitivities.
摘要翻译：掩模缺陷检查方法包括：对光掩模上的掩模图案的多个部分上的缺陷的检测灵敏度进行准备，检测灵敏度根据晶片上的缺陷的影响确定，并且基于所述多个部分检查多个部分的缺陷检测灵敏度。

108. 发明申请

US20070234269A1 Light intensity distribution simulation method and computer program product 失效
标题翻译：光强分布模拟方法和计算机程序产品
公开(公告)号：US20070234269A1
公开(公告)日：2007-10-04
申请号：US11730102
申请日：2007-03-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.
摘要翻译：一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布。

109. 发明申请

US20070232735A1 Organic silicon compound, hydophilic composition containing the same and hydrophilic member 审中-公开
标题翻译：有机硅化合物，含有相同亲水性成分的亲油性组合物
公开(公告)号：US20070232735A1
公开(公告)日：2007-10-04
申请号：US11730412
申请日：2007-04-02
申请人： Satoshi Tanaka , Kazuto Kunita , Satoshi Hoshi
发明人： Satoshi Tanaka , Kazuto Kunita , Satoshi Hoshi
IPC分类号： C07F7/04
CPC分类号： C08G18/227 , C08G18/289 , C08G18/3221 , C08G18/3831 , C08G18/4833 , C08G18/718 , C08G65/336 , C08G77/445 , C08G77/455 , C08G77/46 , C08G2290/00 , C09D175/04
摘要： According to an aspect of the invention, there is provided an organic silicon compound represented by the following Formula (I) or Formula (II): (R1)x(OR)3-xSi-L1-(A)-L2-Si(OR3)3-y(R4)y Formula (I) (R5)z(OR6)3-zSi-L3-(B)—R7 Formula (II) wherein, R1 to R6 each independently represent a hydrogen atom or a hydrocarbon group having 8 or less carbon atoms; R7 represents a hydrogen atom or a monovalent non-metal atom group; x, y and z each independently represent an integer from 0 to 2; L1, L2 and L3 each independently represent a divalent linking group having three or more different atoms selected from the group consisting of a carbon atom, a hydrogen atom, an oxygen atom, a nitrogen atom and a sulfur atom; and A and B each independently represent a polymer or oligomer having a repeating structure formed by a structural unit.
摘要翻译：根据本发明的一个方面，提供了由下式（I）或式（II）表示的有机硅化合物：<？在线公式描述=“在线式”末端=“铅” （（R 1））x（X）3-x Si-L 1 - （A）-L （S 3）3-y（R 4）3-y（R 4）公式（I）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3-z Si-L 3 - （CH 3）3 - z - （B）-R 7式（II）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中，R 1 = R 6各自独立地表示氢原子或碳原子数为8以下的烃基; R 7表示氢原子或一价非金属原子基团; x，y和z各自独立地表示0至2的整数; L 1，L 2和L 3各自独立地表示具有三个或更多个不同原子的二价连接基团，其选自碳原子，氢原子，氧原子，氮原子和硫原子; A和B各自独立地表示具有由结构单元形成的重复结构的聚合物或低聚物。

110. 发明申请

US20070226676A1 Calculating method, verification method, verification program and verification system for edge deviation quantity, and semiconductor device manufacturing method 失效
公开(公告)号：US20070226676A1
公开(公告)日：2007-09-27
申请号：US11727288
申请日：2007-03-26
申请人： Kyoko Izuha , Toshiya Kotani , Satoshi Tanaka
发明人： Kyoko Izuha , Toshiya Kotani , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F7/705
摘要： A method in which a desired pattern is compared with a finish pattern to be formed on a wafer, which is predicted from a design pattern, based on a calculation of a light beam intensity, and a deviation quantity of the finish pattern from the desired pattern at each edge of the finish pattern and the desired pattern is calculated, comprising setting a reference light beam intensity for setting the desired pattern on a wafer, setting an evaluation point for comparison of the finish pattern with the desired pattern, calculating a light beam intensity at the evaluation point, calculating a differentiation value of the light beam intensity at the evaluation point, calculating an intersection of the differentiation value with the reference light beam intensity, and calculating a difference between the intersection and the evaluation point, the difference defining an edge deviation quantity of the finish pattern from the desired pattern.

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