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91. 发明申请

US20050150404A1 Hardened nano-imprinting stamp 审中-公开
标题翻译：硬化纳米印记邮票
公开(公告)号：US20050150404A1
公开(公告)日：2005-07-14
申请号：US11065171
申请日：2005-02-23
申请人： Heon Lee , Gun-Young Jung
发明人： Heon Lee , Gun-Young Jung
IPC分类号： B82B3/00 , B81C1/00 , G03F7/00 , H01L21/027 , B41K1/42
CPC分类号： B82Y10/00 , B81C99/009 , B82Y40/00 , G03F7/0002 , G03F7/0017 , Y10T428/24355
摘要： A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.
摘要翻译：公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。硬化的纳米压印印模包括多个硅基纳米尺寸特征，其具有碳化硅，氮化硅或碳化硅氮化物的硬化壳。通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。在等离子体工艺期间，碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅，氮化硅或碳化硅氮化物的硬化壳。提高了所得到的硬化纳米压印印模的寿命，耐久性，经济性和精度。

92. 发明申请

US20050064720A1 Process for making angled features for nanolithography and nanoimprinting 失效
标题翻译：用于制造纳米光刻和纳米压印的成角度特征的方法
公开(公告)号：US20050064720A1
公开(公告)日：2005-03-24
申请号：US10668148
申请日：2003-09-22
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： G02F1/1337 , H01L21/302
CPC分类号： G02F1/13378 , B81B2203/0361 , B81C1/00626 , B81C99/009
摘要： This invention provides a directional ion etching process for making nano-scaled angled features such as may be used, for example, in liquid crystal displays and or nanoimprinting templates. In a particular embodiment a semiconductor wafer substrate is prepared with at least one layer of material. A photoresist is applied, masked, exposed and developed. Anisotropic ion etching at a high angle relative to the wafer is performed to remove portions of the non protected material layer. The remaining photoresist caps shadow at least a portion of the material layer, and as the ion etching is performed at an angle, the protected portions of the material layer also appear at an angle.
摘要翻译：本发明提供了一种定向离子蚀刻工艺，用于制造例如可用于液晶显示器和/或纳米压印模板中的纳米级角度特征。在特定实施例中，半导体晶片衬底被制备成具有至少一层材料。应用光刻胶，掩蔽，曝光和显影。执行相对于晶片高角度的各向异性离子蚀刻以去除部分未被保护的材料层。剩余的光致抗蚀剂帽遮盖材料层的至少一部分，并且当以一定角度执行离子蚀刻时，材料层的受保护部分也出现一定角度。

93. 发明申请

US20050046758A1 Method of transcribing biomolecular patterns, method of manufacturing chip boards, and method of manufacturing biochips 失效
标题翻译：转录生物分子模式的方法，制造芯片板的方法以及制造生物芯片的方法
公开(公告)号：US20050046758A1
公开(公告)日：2005-03-03
申请号：US10902495
申请日：2004-07-29
申请人： Tomohiko Matsushita , Shigeru Aoyama , Takeo Nishikawa , Yuko Tsuda , Shigemi Norioka , Tetsuichi Wazawa
发明人： Tomohiko Matsushita , Shigeru Aoyama , Takeo Nishikawa , Yuko Tsuda , Shigemi Norioka , Tetsuichi Wazawa
IPC分类号： G01N33/53 , B81C1/00 , B81C99/00 , G01N33/48 , G01N33/50 , G01N35/00 , G01N37/00 , G02F1/017 , G02F1/13 , H01S5/34
CPC分类号： B82Y20/00 , B01J2219/00382 , B01J2219/00385 , B01J2219/00436 , B01J2219/00527 , B01J2219/00576 , B01J2219/00596 , B01J2219/00605 , B01J2219/00612 , B01J2219/00617 , B01J2219/00619 , B01J2219/00621 , B81B2201/0214 , B81B2201/06 , B81C1/00206 , B81C99/009 , B82Y5/00 , B82Y10/00 , G02F2001/01791 , G02F2202/32 , H01S5/3412
摘要： A method of mass-producing minute structures such as biochips, protein chips, quantum dots, and quantum chips involves arranging an antigen two-dimensionally on a board and arranging probes two-dimensionally facing the same direction so that the binding sites of the probes may bind to the antigen. An inorganic substance such as Ni is deposited on the board from the upper side of the probes by sputtering or evaporation to form a thin film layer and on the top surface of the flatly formed thin film layer, a supporting layer is formed by separating out the same inorganic substance using electrotyping. Then, by peeling the thin film layer and the supporting layer off of the board together, the mother stamper having cavities for the patterns of biomolecules is obtained.
摘要翻译：大规模生产生物芯片，蛋白质芯片，量子点和量子芯片的微小结构的方法包括将二维布置在板上，并将探针二维排列成相同的方向，使得探针的结合位点结合抗原。无机物质如Ni通过溅射或蒸发从探针的上侧沉积在板上以形成薄膜层，并且在平坦形成的薄膜层的顶表面上，通过分离出使用电化学的相同无机物质。然后，通过将薄膜层和支撑层从板上剥离在一起，获得具有用于生物分子图案的空腔的母模。

94. 发明申请

US20040238491A1 FINE-DIMENSION MASKS AND RELATED PROCESSES 失效
标题翻译：微尺寸面膜及相关工艺
公开(公告)号：US20040238491A1
公开(公告)日：2004-12-02
申请号：US10250044
申请日：2003-05-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Peter H. Berasi , Michael F. Jerome , Doris P. Pulaski , Robert P. Rippstein
IPC分类号： C23F001/00
CPC分类号： H01L24/11 , B81C99/009 , C23C14/042 , C23F1/02 , C23F1/38 , G03F7/0015 , G03F7/12 , H01L2224/1147 , H01L2224/11472 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01019 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/3025 , Y10T428/24322 , H01L2924/00 , H01L2224/0401
摘要： A method of making, and the resultant mask, comprises developing resist layers over surfaces of a masking layer to transfer significantly reduced sized openings within glass masters attached to the surfaces of the masking layer into the resist layers. These significantly reduced sized openings within the resist layers are then transferred into the masking layer within a first etch bath by simultaneously monitoring and controlling both etchant activity and concentration of a byproduct within the etch bath formed between the masking material and the etchant. The openings may be etched to completion within the first etch bath, or alternatively, the openings may be etched to a pre-finished image size. Wherein the openings are etched to a pre-finished image size, the masking layer is immersed into a second etch bath for further micro-etching of these openings to a final desired image size.
摘要翻译：一种制造方法，并且所得到的掩模包括在掩模层的表面上显影抗蚀剂层，以将附着于掩模层的表面的玻璃主体中的大大减小尺寸的开口转移到抗蚀剂层中。然后通过同时监测和控制在掩蔽材料和蚀刻剂之间形成的蚀刻槽内的副产物的蚀刻剂活性和浓度两者，将抗蚀剂层内的这些明显减小的尺寸的开口转移到第一蚀刻槽内的掩模层中。可以在第一蚀刻槽内蚀刻开口以完成，或者可以将开口蚀刻到预先完成的图像尺寸。其中将开口蚀刻成预成像图像尺寸，将掩模层浸入第二蚀刻槽中，以进一步对这些开口进行微蚀刻以达到最终期望的图像尺寸。

95. 发明授权

US06808646B1 Method of replicating a high resolution three-dimensional imprint pattern on a compliant media of arbitrary size 有权
标题翻译：在任意尺寸的兼容介质上复制高分辨率三维印记图案的方法
公开(公告)号：US06808646B1
公开(公告)日：2004-10-26
申请号：US10425891
申请日：2003-04-29
申请人： Albert H. Jeans
发明人： Albert H. Jeans
IPC分类号： C03C2568
CPC分类号： G03F7/20 , B81C99/009 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0015
摘要： A method for replicating a high resolution three-dimensional imprint pattern on a compliant media is disclosed. The compliant media carries an imprint stamp that includes three-dimensional features that can be used as an imprint stamp in a roll-to-roll transfer printing process. The compliant media can be made to any size and can be connected with a belt or a cylinder. The compliant media can be optically transparent and the belt or cylinder can be optically transparent so that a light source positioned inside or outside the belt or the cylinder can irradiate another media that is urged into contact with the compliant media.
摘要翻译：公开了一种在兼容介质上复制高分辨率三维印记图案的方法。兼容介质带有压印标记，其包括可在卷对卷转印打印过程中用作压印印模的三维特征。柔性介质可以制成任何尺寸，并且可以与皮带或汽缸连接。柔性介质可以是光学透明的，并且带或圆筒可以是光学透明的，使得位于带或圆筒内侧或外侧的光源可以照射被推动与柔性介质接触的另一介质。

96. 发明申请

US20040200818A1 Method and apparatus for processing three-dimensional structure, method for producing three-dimensional shape product and three-dimensional structure 有权
标题翻译：三维结构处理方法及装置，三维形状产品制作方法及三维结构
公开(公告)号：US20040200818A1
公开(公告)日：2004-10-14
申请号：US10832375
申请日：2004-04-27
发明人： Yasufumi Yamada , Katsumi Midorikawa , Hiroshi Kumagai
IPC分类号： G03H001/16 , B23K026/00
CPC分类号： G11B7/125 , B23K26/009 , B23K26/066 , B23K26/18 , B29C33/3857 , B29C64/129 , B81B2203/033 , B81B2203/0392 , B81C1/00103 , B81C99/009 , B81C2201/0143 , G02B5/1857 , G03H2001/0478 , G11B7/261 , Y10S428/913 , Y10T428/12389 , Y10T428/12396 , Y10T428/24917 , Y10T428/24926 , Y10T428/24942 , Y10T428/31623
摘要： A method for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method includes depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.
摘要翻译：公开了一种用于处理具有微细三维形状和光滑表面的三维结构的方法，其中三维结构可用于光学装置。该方法包括在平坦基底上沉积用于吸收激光的薄层; 在薄层上沉积透明层以吸收激光; 并照射通过透明层的工艺激光; 其中将工艺激光的脉冲注入能量设定为与能够在工艺激光的入射方向上的前面暴露薄层的表面的最大脉冲注入能量相同或更小，并设定与能够沿着工艺激光的入射方向去除后方的透明层的最小脉冲注入能量相同或者更大。

97. 发明申请

US20040169003A1 Micro-casted silicon carbide nano-imprinting stamp 失效
公开(公告)号：US20040169003A1
公开(公告)日：2004-09-02
申请号：US10794928
申请日：2004-03-05
发明人： Heon Lee , Gun-Young Jung
IPC分类号： H01L029/12
CPC分类号： B81C99/009 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H05K3/12 , Y10S977/887 , Y10T428/24479
摘要： A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

98. 发明申请

US20040081800A1 Micro-casted silicon carbide nano-imprinting stamp 失效
公开(公告)号：US20040081800A1
公开(公告)日：2004-04-29
申请号：US10279643
申请日：2002-10-24
发明人： Heon Lee , Gun-Young Jung
IPC分类号： B32B003/00
CPC分类号： B81C99/009 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H05K3/12 , Y10S977/887 , Y10T428/24479
摘要： A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

99. 发明申请

US20040081798A1 Hardened nano-imprinting stamp 失效
标题翻译：硬化纳米印记邮票
公开(公告)号：US20040081798A1
公开(公告)日：2004-04-29
申请号：US10279407
申请日：2002-10-24
发明人： Heon Lee , Gun-Young Jung
IPC分类号： B32B001/00
CPC分类号： B82Y10/00 , B81C99/009 , B82Y40/00 , G03F7/0002 , G03F7/0017 , Y10T428/24355
摘要： A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.
摘要翻译：公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。硬化的纳米压印印模包括多个硅基纳米尺寸特征，其具有碳化硅，氮化硅或碳化硅氮化物的硬化壳。通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。在等离子体工艺期间，碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅，氮化硅或碳化硅氮化物的硬化壳。提高了所得到的硬化纳米压印印模的寿命，耐久性，经济性和精度。

100. 发明申请

US20030038033A1 Process for fabricating high aspect ratio embossing tool and microstructures 审中-公开
标题翻译：用于制造高纵横比压花工具和微结构的工艺
公开(公告)号：US20030038033A1
公开(公告)日：2003-02-27
申请号：US09939972
申请日：2001-08-27
发明人： Alan B. Harker , Jeffrey F. DeNatale , Dennis Strauss
IPC分类号： B44C001/22 , C23F001/00 , B32B001/08 , C25F003/00 , B29D011/00 , C03C025/68 , C25D001/00
CPC分类号： G02B1/118 , B44B5/0052 , B44C1/24 , B81C99/009 , C25D7/00
摘要： A process for embossing high aspect ratio microstructures is provided, wherein the microstructures provide decreased surface reflection and increased transmission through an optical component. The process comprises etching columnar pits in a silicon substrate using inductively coupled plasma, followed by reactive ion etching of the columnar pits to create relatively pointed obelisks. The silicon substrate is then preferably rinsed prior to vapor depositing a conductive layer thereon. Further, a metal is electroformed over the conductive layer to form an embossing tool. The embossing tool is then used to form microstructures, for example in a polymer sheet, having aspect ratios greater than 5 to 1.
摘要翻译：提供了一种用于压花高纵横比微结构的方法，其中微结构提供减少的表面反射和通过光学部件的增加的透射。该方法包括使用电感耦合等离子体在硅衬底中蚀刻柱状凹坑，随后对柱状凹坑进行反应离子蚀刻以形成相对尖的方尖石。然后优选在将衬底上的导电层气相沉积之前冲洗硅衬底。此外，在导电层上电铸金属以形成压花工具。然后使用压花工具来形成具有大于5比1的纵横比的聚合物片材中的微结构。

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