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    • 94. 发明申请
    • Silicon micro-mold
    • 硅微模具
    • US20050158669A1
    • 2005-07-21
    • US11015084
    • 2004-12-15
    • Alfredo Morales
    • Alfredo Morales
    • B29C33/38B81C1/00G03F7/00
    • B81C99/009B29C33/3842G03F7/0017
    • The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer an trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.
    • 本发明描述了一种可以实现具有小于1微米的横向尺寸的图案特征的X射线掩模工具的制造方法。 该工艺开始于在硅晶片的一个表面上沉积导电金属层。 然后使用薄的光致抗蚀剂和标准光刻掩模通过曝光和显影抗蚀剂将痕迹图案转印到晶片的相对表面上。 将硅衬底的暴露部分通过晶片厚度各向异性地蚀刻到导电金属层,以提供由用作硅微型模的硅中的一系列直线通道和凹槽组成的蚀刻图案。 通过首先用金属沉积物(通常通过电镀)填充模具通道和凹槽,然后通过化学蚀刻去除硅微型模具,用该模具制备微组件。
    • 95. 发明申请
    • Hardened nano-imprinting stamp
    • 硬化纳米印记邮票
    • US20050150404A1
    • 2005-07-14
    • US11065171
    • 2005-02-23
    • Heon LeeGun-Young Jung
    • Heon LeeGun-Young Jung
    • B82B3/00B81C1/00G03F7/00H01L21/027B41K1/42
    • B82Y10/00B81C99/009B82Y40/00G03F7/0002G03F7/0017Y10T428/24355
    • A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.
    • 公开了一种硬化的纳米压印印模和形成硬化的纳米压印印模的方法。 硬化的纳米压印印模包括多个硅基纳米尺寸特征,其具有碳化硅,氮化硅或碳化硅氮化物的硬化壳。 通过等离子体渗碳和/或等离子体氮化处理使硬化的壳比下面的硅更硬。 在等离子体工艺期间,碳和/或氮原子轰击并穿透纳米尺寸特征的多个暴露表面并与硅发生化学反应以形成碳化硅,氮化硅或碳化硅氮化物的硬化壳。 提高了所得到的硬化纳米压印印模的寿命,耐久性,经济性和精度。
    • 96. 发明申请
    • Process for making angled features for nanolithography and nanoimprinting
    • 用于制造纳米光刻和纳米压印的成角度特征的方法
    • US20050064720A1
    • 2005-03-24
    • US10668148
    • 2003-09-22
    • Manish Sharma
    • Manish Sharma
    • G02F1/1337H01L21/302
    • G02F1/13378B81B2203/0361B81C1/00626B81C99/009
    • This invention provides a directional ion etching process for making nano-scaled angled features such as may be used, for example, in liquid crystal displays and or nanoimprinting templates. In a particular embodiment a semiconductor wafer substrate is prepared with at least one layer of material. A photoresist is applied, masked, exposed and developed. Anisotropic ion etching at a high angle relative to the wafer is performed to remove portions of the non protected material layer. The remaining photoresist caps shadow at least a portion of the material layer, and as the ion etching is performed at an angle, the protected portions of the material layer also appear at an angle.
    • 本发明提供了一种定向离子蚀刻工艺,用于制造例如可用于液晶显示器和/或纳米压印模板中的纳米级角度特征。 在特定实施例中,半导体晶片衬底被制备成具有至少一层材料。 应用光刻胶,掩蔽,曝光和显影。 执行相对于晶片高角度的各向异性离子蚀刻以去除部分未被保护的材料层。 剩余的光致抗蚀剂帽遮盖材料层的至少一部分,并且当以一定角度执行离子蚀刻时,材料层的受保护部分也出现一定角度。