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91. 发明公开

EP0856599A3 Apparatus for feeding raw material into a quartz crucible and method of feeding the same 失效
标题翻译：设备，用于在一石英坩埚供给原料和用于供给原料的方法
公开(公告)号：EP0856599A3
公开(公告)日：2000-03-22
申请号：EP98101639.7
申请日：1998-01-30
申请人： KOMATSU ELECTRONIC METALS CO., LTD
发明人： Yatsurugi, Yoshifumi
IPC分类号： C30B15/00 , C30B29/06 , C30B15/02
CPC分类号： C30B15/02 , Y10S117/90 , Y10T117/1056
摘要： The invention is to provide a method for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. For example, after a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.
摘要翻译：本发明是提供一种通过CZ法自动地和快速进给原料成石英坩埚制造单晶硅的提供的方法。例如，排水后裤203被设置在石英坩埚201中，纯水从供水裤204供给，与石英坩埚201被输送到一个容器210下安装一转盘213。此时，该石英坩埚201旋转，并且由于纯水的浮力被施加于块状材料209个影响由落下块状材料中导致可以缓和，因此，损害到块状原料209被送入石英坩埚201。石英坩埚201可以被防止。供给原料结束后，纯粹的水通过排水裤203排出，然后排水裤203从石英坩埚201有后，石英坩埚201被输送到微波炉211进行干燥缩回。

92. 发明授权

EP0675534B1 SOI substrate and method of producing the same 失效
标题翻译： SOI衬底及其制备方法
公开(公告)号：EP0675534B1
公开(公告)日：2000-03-01
申请号：EP95103998.1
申请日：1995-03-17
申请人： KOMATSU ELECTRONIC METALS CO., LTD , NIPPON TELEGRAPH AND TELEPHONE CORPORATION , NTT Electronics Corporation
发明人： Nakashima, Sadao, c/o Nippon Telegraph and , Izumi, Katsutoshi, c/o Nippon Telegraph and , Ohwada, Norihiko, c/o NTT Electronics Technology , Katayama, Tatsuhiko, c/o Komatsu Electronic Metals
IPC分类号： H01L21/762 , H01L21/265
CPC分类号： H01L21/26533 , H01L21/76243
摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.

93. 发明公开

EP0856599A2 Apparatus for feeding raw material into a quartz crucible and method of feeding the same 失效
标题翻译：设备，用于在一石英坩埚供给原料和用于供给原料的方法
公开(公告)号：EP0856599A2
公开(公告)日：1998-08-05
申请号：EP98101639.7
申请日：1998-01-30
申请人： KOMATSU ELECTRONIC METALS CO., LTD
发明人： Yatsurugi, Yoshifumi
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/02 , Y10S117/90 , Y10T117/1056
摘要： The invention is to provide a method for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. For example, after a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.

94. 发明授权

EP0591525B1 DEVICE FOR PULLING UP SINGLE CRYSTAL 失效
标题翻译： DEVICE拉单晶
公开(公告)号：EP0591525B1
公开(公告)日：1997-09-03
申请号：EP91911369.6
申请日：1991-06-24
申请人： KOMATSU ELECTRONIC METALS CO., LTD
发明人： TOMIOKA, Junsuke, 386-75, Sanada , NAGAI, Kazunori, 3-17-5-105, Kiboga-oka , MATSUZAKI, Akihiro, 4310 Yokouchi
IPC分类号： C30B15/00
CPC分类号： C30B35/00 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： A device for pulling up a single crystal produced through the Czochralski process, characterized in that: one side thereof facing the quartz crucible is composed of a heat absorbing body whereas the other a heat insulating body; a first cylindrical screen having at upper and lower ends an outwardly directed annular rim and inwardly directed one, respectively, and also having a corner part which faces said crucible and is formed into a curved or polygonal surface is disposed around a single crystal pulling up area with said annular rim at the lower end positioned near an area in which molten material is filled; and a second screen in the shape of parabola at cross-section to open at the central part while surrounding the single crystal pulling up area, and having an outwardly directed annular rim at the upper end is provided inside said first screen, and, thus, the device intends to quickly pull up a single crystal bar while preventing contamination of crystal otherwise caused by impurities and interruption of single-crystallization. A second screen in such a cross-sectional shape as extending along the first screen may be disposed inside the first screen and the second screen may be provided with a forced cooling mechanism.

95. 发明公开

EP0550750A4 EP0550750A4 - 失效
标题翻译： EP0550750A4 - Google专利
公开(公告)号：EP0550750A4
公开(公告)日：1994-01-19
申请号：EP91916605
申请日：1991-09-20
申请人： KOMATSU ELECTRONIC METALS CO., LTD
发明人： TOMIOKA, JUNSUKE, 386-75, SANADA , AKAGI, TETSURO, 635-201, YAMASHITA , YOSHINO, SHIRO, 1149-3, ISOBE
IPC分类号： H01L21/322 , H01L21/324
CPC分类号： H01L21/3225

96. 发明公开

EP0552366A1 SEMICONDUCTOR DEVICE MANUFACTURING PROCESS 失效
标题翻译： HALBLEITERVERRICHTUNGSHERSTELLUNGSVERFAHREN。
公开(公告)号：EP0552366A1
公开(公告)日：1993-07-28
申请号：EP91915960.8
申请日：1991-09-11
申请人： KOMATSU ELECTRONIC METALS CO., LTD
发明人： KAWAHARA, Hiroyuki, 812-1, Shinomiya , KONO, Mitsuo, Wakamiya Heights 1-505
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： A semiconductor device manufacturing process characterized in that, when the limit values of wafer warpage and the internal defect density in the device fabrication process are specified in certain ranges for a single-crystal silicon wafer of a substrate according to the conditions of the device yield and the gettering capability, preheating treatment for producing the oxygen precipitation nucleus is applied to a wafer having an initial oxygen concentration capable of simultaneously meeting the above ranges for a heat treatment time simultaneously meeting the range between the upper- and lower-limit values of the initial oxygen concentration and the range of the above internal defect density. The process of the present invention makes it possible to efficiently select a combination of the above conditions for securing the BMD density required to minimize the wafer warpage and to enable the wafer to exhibit the desired gettering capability in a short time not by trial and error.
摘要翻译：一种半导体器件制造方法，其特征在于，当晶片翘曲的限制值和器件制造工艺中的内部缺陷密度在基板的单晶硅晶片的特定范围内被指定时，根据器件产量的条件和将吸气能力，用于产生氧沉淀核的预热处理施加到具有能够同时满足上述范围的初始氧浓度的晶片的热处理时间，同时满足初始浓度的上限值和下限值之间的范围氧浓度和上述内部缺陷密度的范围。本发明的方法使得可以有效地选择用于确保使晶片翘曲最小化所需的BMD密度的上述条件的组合，并且使得晶片能够在短时间内不经过反复试验显示出期望的吸气能力。

97. 发明公开

EP0137291A2 Amorphous silicon solar cells 无效
标题翻译：非晶硅太阳能电池。
公开(公告)号：EP0137291A2
公开(公告)日：1985-04-17
申请号：EP84110395.5
申请日：1984-08-31
申请人： KABUSHIKI KAISHA KOMATSU SEISAKUSHO , KOMATSU ELECTRONIC METALS CO., LTD
发明人： Tajika, Jun , Sano, Seijiro , Miyake, Tsuneo , Kuboi, Osamu
IPC分类号： H01L31/02 , H01L31/06
CPC分类号： H01L31/075 , H01L31/1884 , Y02E10/548
摘要： An amorphous silicon solar cell comprising a glass substrate, a transparent conductive film formed on the glass substrate on one side thereof and having micro columns or fine crystals irregularly formed on on the other side, a plurality of amorphous silicon layers superposed on the other side of the conductive film, and a metal electrode formed on the superposed silicon layer. At the interface between the transparent conductive film and the amorphous silicon layer is formed an intermediate layer in which both materials of the conductive film and the silicon layer are mixed. The intermediate layer has a refractive index between the conductive film and the silicon layer. The glass substrate may be substituted with a metal substrate, in which case the plurality of silicon layers are formed directly on the metal substrate, on which the transparent conductive film having an irregular surface on the side opposite to the side where the silicon layers are formed and a metal electrode are formed in this order.

98. 发明申请

US20070252239A1 Silicon Semiconductor Substrate Heat-Treatment Method and Silicon Semiconductor Substrate Treated by the Method 有权
标题翻译：硅半导体基板热处理方法和硅半导体基板处理方法
公开(公告)号：US20070252239A1
公开(公告)日：2007-11-01
申请号：US11578814
申请日：2005-04-22
申请人： Susumu Maeda , Takahisa Sugiman , Shinya Sadohara , Shiro Yoshino , Kouzo Nakamura
发明人： Susumu Maeda , Takahisa Sugiman , Shinya Sadohara , Shiro Yoshino , Kouzo Nakamura
IPC分类号： H01L29/167 , H01L21/322
CPC分类号： H01L21/3225
摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.
摘要翻译：提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片在其表面附近具有剥离区域。

99. 发明申请

US20070229815A1 Apparatus and Method for Inspecting Semiconductor Wafer 有权
标题翻译：用于检查半导体晶片的装置和方法
公开(公告)号：US20070229815A1
公开(公告)日：2007-10-04
申请号：US11569249
申请日：2005-06-01
申请人： Fumi Nabeshima , Kazuya Togashi
发明人： Fumi Nabeshima , Kazuya Togashi
IPC分类号： G01N21/00
CPC分类号： G01B11/26 , G01N21/9501
摘要： A semiconductor wafer surface inspection apparatus detects LADs (Large Area Defects) which are flat and have low heights and differentiates them from particles. This inspection apparatus irradiates each point on the surface of a semiconductor wafer 200 with two parallel laser beams perpendicularly to the points while scanning the surface, and by measuring the phase difference between the two reflected beams, detects points 400 at which an upward inclination exists and points 402 at which a downward inclination exists on the surface of the wafer 200. Areas 404 in which pairs or sets of upward-inclination points 400 and downward-inclination points 402 exist within a prescribed range of mutual distances are inferred to be LADs.
摘要翻译：半导体晶片表面检查装置检测平坦且具有低高度并将其与颗粒区分开的LAD（大面积缺陷）。该检查装置在扫描表面的同时用两个平行的激光束照射半导体晶片200的表面上的两个平行的激光束，并且通过测量两个反射光束之间的相位差来检测存在向上倾斜的点400，在晶片200的表面上存在向下倾斜的点402.其中成对或组的向上倾斜点400和向下倾斜点402存在于相互距离的规定范围内的区域404被推断为LAD。

100. 发明申请

US20070218570A1 NITORGEN DOPED SILICON WAFER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：硝基硅硅砂及其制造方法
公开(公告)号：US20070218570A1
公开(公告)日：2007-09-20
申请号：US11573387
申请日：2005-08-11
申请人： Kouzo Nakamura , Susumu Maeda , Kouichirou Hayashida , Takahisa Sugiman , Katsuhiko Sugisawa
发明人： Kouzo Nakamura , Susumu Maeda , Kouichirou Hayashida , Takahisa Sugiman , Katsuhiko Sugisawa
IPC分类号： H01L21/66
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10T117/1004 , Y10T117/1056
摘要： An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.
摘要翻译：通过进行外延生长或高温热处理，获得具有优异吸气能力的外延晶片和高温热处理晶片。引起晶体生长时掺杂氮的硅晶体中的密度与引入氧沉淀的半径的关系式可以从晶体生长期间的氮浓度和1100℃附近的冷却速率得出，并且氧气可以从氧沉淀密度与半径，氧浓度和晶片热处理过程相关的导出关系式来预测热处理后得到的沉淀物密度。此外，使用通过该方法预测的条件，获得外延生长的晶片和氧沉淀物密度已被控制到适当密度的高温退火晶片。

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